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Papers by Mihai Sanduleanu

Research paper thumbnail of A 3.2GS/s 4.55b ENOB two-step subranging ADC in 45nm SOI CMOS

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012

ABSTRACT A 3.2GS/s two-step subranging ADC is implemented in a 45nm SOI-CMOS technology. The meas... more ABSTRACT A 3.2GS/s two-step subranging ADC is implemented in a 45nm SOI-CMOS technology. The measured ENOB is 4.55b at 1.6GHz. The IIP3 is -1.1dBm. The power consumption is 22mW from a 1.05V voltage supply for a FOM of 290fJ/ conversion-step. The chip occupies an active area of 0.07mm2.

Research paper thumbnail of Indirect performance sensing for on-chip analog self-healing via Bayesian model fusion

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013

⎯On-chip analog self-healing requires low-cost sensors to accurately measure various performance ... more ⎯On-chip analog self-healing requires low-cost sensors to accurately measure various performance metrics. In this paper, we propose a novel approach of indirect performance sensing based upon Bayesian model fusion (BMF) to facilitate inexpensive-yet-accurate on-chip performance measurement. A 25GHz differential Colpitts voltage-controlled oscillator (VCO) designed in a 32nm CMOS SOI process is used to validate the proposed indirect performance sensing and self-healing methodology. Our silicon measurement results demonstrate that the parametric yield of the VCO is improved from 0% to 69.17% for a wafer after the proposed self-healing is applied.

Research paper thumbnail of Key Building Blocks for Millimeter-Wave IC Design in Baseline CMOS

Analog Circuit Design, 2008

Page 1. KEY BUILDING BLOCKS FOR MILLIMETER-WAVE IC DESIGN IN BASELINE CMOS Mihai AT Sanduleanu1, ... more Page 1. KEY BUILDING BLOCKS FOR MILLIMETER-WAVE IC DESIGN IN BASELINE CMOS Mihai AT Sanduleanu1, Eduardo Alarcon1, Hammad M. Cheema2, Maja Vidojkovic2, Reza Mahmoudi2 and Arthur van Roermund2 ...

Research paper thumbnail of A 40 GHz, Broadband, Highly Linear Amplifier, Employing T-Coil Bandwidth Extension Technique

… , 2008. RFIC 2008. …, 2008

Research paper thumbnail of Adaptive Circuit Design Methodology and Test Applied to Millimeter-Wave Circuits

IEEE Design & Test, 2014

Communication circuits that can adapt to environmental and process variations have the potential ... more Communication circuits that can adapt to environmental and process variations have the potential to maximize production yield and minimize the energy per transmitted bit. An indirect sensing approach using Bayesian model fusion methodology is proposed to enable on-chip circuit adaptability. An architecture for the integration of a large number of adaptive circuit loops into a SoC is introduced, where adaptation algorithms are run on a micro-controller. An effective software-hardware co-design methodology for the implementation and verification of the proposed adaptive scheme is also discussed. An adaptive 60GHz LNA was designed to demonstrate the proposed methodology.

Research paper thumbnail of Wireless activity monitor using 3D itegration

Unobtrusive and continuous measurement of body parameters such as activity, movement, heartbeat, ... more Unobtrusive and continuous measurement of body parameters such as activity, movement, heartbeat, temperature and oxygen level in blood offers many opportunities in the health and fitness area: distant patient monitoring, rehabilitation support, activity stimulation, improved training programs in sports and even sleep management become possible. Enablers are small wireless body sensors sending the data to a computer or communication device. In the European project e-CUBES, a prototype wireless activity monitor is being developed to demonstrate this can be realized by stacking integrated passives, embedded thinned IC's and SMDs. In the device functional layers are stacked and realized in different technologies: silicon substrate with integrated passives, embedded thinned active dies (transmitter and processor), redistribution layer and SMDs on a PCB which is again stacked on the silicon. The antenna is realized on the silicon backside. The accelerometer is mounted as SMD on the silicon. To enable low power data transfer and a small antenna, a 17 GHz transmitter and resonator have been developed and are integrated in the demonstrator. The integrated design and design considerations as well as the testing of the wireless sensor and its functional parts are explained.

Research paper thumbnail of A 5.5GHz Power Amplifier For Wide Bandwidth Polar Modulator

An efficiency-enhanced power amplifier (PA) is analysed and designed for wide-bandwidth envelope ... more An efficiency-enhanced power amplifier (PA) is analysed and designed for wide-bandwidth envelope elimination and restoration (EER) system with application to orthogonal frequency-division multiplexing (OFDM) wireless local area network (WLAN) system. The proposed PA has no bandwidth limitation as that of the DC-DC converter used in classical polar modulator. The simulation result shows that the average power-added efficiency (PAE) is 25.38% at a 5.5Ghz average output power of 19dBm with peak to average ratio about 7.7dB and the overall error vector magnitude (EVM) remains less than 10% throughout its output power range. This PA shows much higher PAE among the reported WLAN BiCMOS HBT PAs as well as satisfying IEEE802.11a transmitter back off requirement

Research paper thumbnail of A 5.5GHz Power Amplifier For Wide Bandwidth Polar Modulator

An efficiency-enhanced power amplifier (PA) is analysed and designed for wide-bandwidth envelope ... more An efficiency-enhanced power amplifier (PA) is analysed and designed for wide-bandwidth envelope elimination and restoration (EER) system with application to orthogonal frequency-division multiplexing (OFDM) wireless local area network (WLAN) system. The proposed PA has no bandwidth limitation as that of the DC-DC converter used in classical polar modulator. The simulation result shows that the average power-added efficiency (PAE) is 25.38% at a 5.5Ghz average output power of 19dBm with peak to average ratio about 7.7dB and the overall error vector magnitude (EVM) remains less than 10% throughout its output power range. This PA shows much higher PAE among the reported WLAN BiCMOS HBT PAs as well as satisfying IEEE802.11a transmitter back off requirement

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of Ring Oscillator Based on R-NMOS Logic with Back-Gate Control

This paper presents a low-voltage, differential RC-ring oscillator for wireless communication sys... more This paper presents a low-voltage, differential RC-ring oscillator for wireless communication systems, designed in a standard triple-well 90nm CMOS technology. This is a two-stage R-NMOS (resistor-NMOS logic) ring VCO. The oscillation frequency can be controlled from the DC voltage sources: the back-gate biasing voltage VBulk and/or the power supply VDD. The simulation results show a maximum oscillation frequency of 17GHz

Research paper thumbnail of Ring Oscillator Based on R-NMOS Logic with Back-Gate Control

This paper presents a low-voltage, differential RC-ring oscillator for wireless communication sys... more This paper presents a low-voltage, differential RC-ring oscillator for wireless communication systems, designed in a standard triple-well 90nm CMOS technology. This is a two-stage R-NMOS (resistor-NMOS logic) ring VCO. The oscillation frequency can be controlled from the DC voltage sources: the back-gate biasing voltage VBulk and/or the power supply VDD. The simulation results show a maximum oscillation frequency of 17GHz

Research paper thumbnail of Ring Oscillator Based on R-NMOS Logic with Back-Gate Control

This paper presents a low-voltage, differential RC-ring oscillator for wireless communication sys... more This paper presents a low-voltage, differential RC-ring oscillator for wireless communication systems, designed in a standard triple-well 90nm CMOS technology. This is a two-stage R-NMOS (resistor-NMOS logic) ring VCO. The oscillation frequency can be controlled from the DC voltage sources: the back-gate biasing voltage VBulk and/or the power supply VDD. The simulation results show a maximum oscillation frequency of 17GHz

Research paper thumbnail of A 3.2GS/s 4.55b ENOB two-step subranging ADC in 45nm SOI CMOS

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, 2012

ABSTRACT A 3.2GS/s two-step subranging ADC is implemented in a 45nm SOI-CMOS technology. The meas... more ABSTRACT A 3.2GS/s two-step subranging ADC is implemented in a 45nm SOI-CMOS technology. The measured ENOB is 4.55b at 1.6GHz. The IIP3 is -1.1dBm. The power consumption is 22mW from a 1.05V voltage supply for a FOM of 290fJ/ conversion-step. The chip occupies an active area of 0.07mm2.

Research paper thumbnail of Indirect performance sensing for on-chip analog self-healing via Bayesian model fusion

Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013

⎯On-chip analog self-healing requires low-cost sensors to accurately measure various performance ... more ⎯On-chip analog self-healing requires low-cost sensors to accurately measure various performance metrics. In this paper, we propose a novel approach of indirect performance sensing based upon Bayesian model fusion (BMF) to facilitate inexpensive-yet-accurate on-chip performance measurement. A 25GHz differential Colpitts voltage-controlled oscillator (VCO) designed in a 32nm CMOS SOI process is used to validate the proposed indirect performance sensing and self-healing methodology. Our silicon measurement results demonstrate that the parametric yield of the VCO is improved from 0% to 69.17% for a wafer after the proposed self-healing is applied.

Research paper thumbnail of Key Building Blocks for Millimeter-Wave IC Design in Baseline CMOS

Analog Circuit Design, 2008

Page 1. KEY BUILDING BLOCKS FOR MILLIMETER-WAVE IC DESIGN IN BASELINE CMOS Mihai AT Sanduleanu1, ... more Page 1. KEY BUILDING BLOCKS FOR MILLIMETER-WAVE IC DESIGN IN BASELINE CMOS Mihai AT Sanduleanu1, Eduardo Alarcon1, Hammad M. Cheema2, Maja Vidojkovic2, Reza Mahmoudi2 and Arthur van Roermund2 ...

Research paper thumbnail of A 40 GHz, Broadband, Highly Linear Amplifier, Employing T-Coil Bandwidth Extension Technique

… , 2008. RFIC 2008. …, 2008

Research paper thumbnail of Adaptive Circuit Design Methodology and Test Applied to Millimeter-Wave Circuits

IEEE Design & Test, 2014

Communication circuits that can adapt to environmental and process variations have the potential ... more Communication circuits that can adapt to environmental and process variations have the potential to maximize production yield and minimize the energy per transmitted bit. An indirect sensing approach using Bayesian model fusion methodology is proposed to enable on-chip circuit adaptability. An architecture for the integration of a large number of adaptive circuit loops into a SoC is introduced, where adaptation algorithms are run on a micro-controller. An effective software-hardware co-design methodology for the implementation and verification of the proposed adaptive scheme is also discussed. An adaptive 60GHz LNA was designed to demonstrate the proposed methodology.

Research paper thumbnail of Wireless activity monitor using 3D itegration

Unobtrusive and continuous measurement of body parameters such as activity, movement, heartbeat, ... more Unobtrusive and continuous measurement of body parameters such as activity, movement, heartbeat, temperature and oxygen level in blood offers many opportunities in the health and fitness area: distant patient monitoring, rehabilitation support, activity stimulation, improved training programs in sports and even sleep management become possible. Enablers are small wireless body sensors sending the data to a computer or communication device. In the European project e-CUBES, a prototype wireless activity monitor is being developed to demonstrate this can be realized by stacking integrated passives, embedded thinned IC's and SMDs. In the device functional layers are stacked and realized in different technologies: silicon substrate with integrated passives, embedded thinned active dies (transmitter and processor), redistribution layer and SMDs on a PCB which is again stacked on the silicon. The antenna is realized on the silicon backside. The accelerometer is mounted as SMD on the silicon. To enable low power data transfer and a small antenna, a 17 GHz transmitter and resonator have been developed and are integrated in the demonstrator. The integrated design and design considerations as well as the testing of the wireless sensor and its functional parts are explained.

Research paper thumbnail of A 5.5GHz Power Amplifier For Wide Bandwidth Polar Modulator

An efficiency-enhanced power amplifier (PA) is analysed and designed for wide-bandwidth envelope ... more An efficiency-enhanced power amplifier (PA) is analysed and designed for wide-bandwidth envelope elimination and restoration (EER) system with application to orthogonal frequency-division multiplexing (OFDM) wireless local area network (WLAN) system. The proposed PA has no bandwidth limitation as that of the DC-DC converter used in classical polar modulator. The simulation result shows that the average power-added efficiency (PAE) is 25.38% at a 5.5Ghz average output power of 19dBm with peak to average ratio about 7.7dB and the overall error vector magnitude (EVM) remains less than 10% throughout its output power range. This PA shows much higher PAE among the reported WLAN BiCMOS HBT PAs as well as satisfying IEEE802.11a transmitter back off requirement

Research paper thumbnail of A 5.5GHz Power Amplifier For Wide Bandwidth Polar Modulator

An efficiency-enhanced power amplifier (PA) is analysed and designed for wide-bandwidth envelope ... more An efficiency-enhanced power amplifier (PA) is analysed and designed for wide-bandwidth envelope elimination and restoration (EER) system with application to orthogonal frequency-division multiplexing (OFDM) wireless local area network (WLAN) system. The proposed PA has no bandwidth limitation as that of the DC-DC converter used in classical polar modulator. The simulation result shows that the average power-added efficiency (PAE) is 25.38% at a 5.5Ghz average output power of 19dBm with peak to average ratio about 7.7dB and the overall error vector magnitude (EVM) remains less than 10% throughout its output power range. This PA shows much higher PAE among the reported WLAN BiCMOS HBT PAs as well as satisfying IEEE802.11a transmitter back off requirement

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of A near-field millimeter-wave dielectric imaging technique with sub-wavelength spatial resolution

A near-field millimeter-wave imaging technique is introduced which is capable of producing images... more A near-field millimeter-wave imaging technique is introduced which is capable of producing images with sub-wavelength resolution. A phantom made of a Teflon board containing samples of different materials with dielectric constants ranging from 1 to 48 was built, and a near-field loop antenna and a 110GHz vector network analyzer were used to capture near-field images of the Teflon board. A novel image processing method is described that is capable of achieving an image resolution of 0.5mm at 110GHz.

Research paper thumbnail of Ring Oscillator Based on R-NMOS Logic with Back-Gate Control

This paper presents a low-voltage, differential RC-ring oscillator for wireless communication sys... more This paper presents a low-voltage, differential RC-ring oscillator for wireless communication systems, designed in a standard triple-well 90nm CMOS technology. This is a two-stage R-NMOS (resistor-NMOS logic) ring VCO. The oscillation frequency can be controlled from the DC voltage sources: the back-gate biasing voltage VBulk and/or the power supply VDD. The simulation results show a maximum oscillation frequency of 17GHz

Research paper thumbnail of Ring Oscillator Based on R-NMOS Logic with Back-Gate Control

This paper presents a low-voltage, differential RC-ring oscillator for wireless communication sys... more This paper presents a low-voltage, differential RC-ring oscillator for wireless communication systems, designed in a standard triple-well 90nm CMOS technology. This is a two-stage R-NMOS (resistor-NMOS logic) ring VCO. The oscillation frequency can be controlled from the DC voltage sources: the back-gate biasing voltage VBulk and/or the power supply VDD. The simulation results show a maximum oscillation frequency of 17GHz

Research paper thumbnail of Ring Oscillator Based on R-NMOS Logic with Back-Gate Control

This paper presents a low-voltage, differential RC-ring oscillator for wireless communication sys... more This paper presents a low-voltage, differential RC-ring oscillator for wireless communication systems, designed in a standard triple-well 90nm CMOS technology. This is a two-stage R-NMOS (resistor-NMOS logic) ring VCO. The oscillation frequency can be controlled from the DC voltage sources: the back-gate biasing voltage VBulk and/or the power supply VDD. The simulation results show a maximum oscillation frequency of 17GHz