Minseok Jo - Academia.edu (original) (raw)
Papers by Minseok Jo
Japanese Journal of Applied Physics, 2011
Applied Physics Letters, 2007
Materials showing reversible resistance switching between high-resistance state and low-resistanc... more Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today’s semiconductor technology. In this letter, the improvement of reproducible hysteresis and resistive switching characteristics of metal-La0.7Ca0.3MnO3-metal (M-LCMO-M) heterostructures is demonstrated. The fabrication of the M-LCMO-M heterostructures is compatible with the standard complementary metal-oxide semiconductor process. The effect of oxygen annealing on the improvement of the hysteresis and resistive switching is discussed. The good retention characteristics are exhibited in the M-LCMO-M heterostructures by the accurate controlling of the preparation parameters.
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
IEEE Access
Recently, as the development cycle of applications has been shortened, it is important to develop... more Recently, as the development cycle of applications has been shortened, it is important to develop rapid and accurate application testing technology. Since application testing requires a lot of cost, mobile GUI component detection technology using deep learning is essential to prevent the use of expensive human resources. In this paper, we shall propose a Clickable Object Detection Network (CODNet) for mobile component detection in a wide range of mobile screen resolutions. CODNet consists of three modules: feature extraction, deconvolution and prediction modules in order to provide performance improvement and scalability. Feature extraction module uses squeeze and excitation blocks to efficiently extract features by changing the ratio of the input image to 1:2 most close to that of mobile screen. Deconvolution module provides feature map of various sizes by upsampling feature map through top-down pathway and lateral connections. Prediction module selects an anchor size most suitable for the mobile environment using Anchor Transfer block among the set of anchor candidates obtained through the analysis of mobile dataset. Moreover, we shall show that our model achieves competitive performance in mean average precision on our dataset compared to the other models, and object detection performance is improved by building a new mobile screen dataset which consists of data collected from various resolutions and operating systems. INDEX TERMS Object detection, computer vision, mobile screen, deep neural networks.
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010
Journal of Crystal Growth, 2008
Journal of Biological Chemistry, 2002
Binding of the urokinase-type plasminogen activator (uPA) to its receptor activates diverse cell ... more Binding of the urokinase-type plasminogen activator (uPA) to its receptor activates diverse cell signaling pathways. How these signals are integrated so that cell physiology is altered remains unclear. In this study, we demonstrated that migration of MCF-7 breast cancer cells and HT-1080 fibrosarcoma cells on serum-coated surfaces is stimulated by agents that activate ERK, including uPA, epidermal growth factor, and constitutively active MEK1. The promigratory activity of these agents was entirely blocked not only by the MEK-specific antagonist PD098059, but also by antagonists of the Rho-Rho kinase pathway, including Y-27632 and dominant-negative RhoA (RhoA-N19). uPA did not significantly increase the level of GTP-bound RhoA, suggesting that the constitutive activity of the Rho-Rho kinase pathway may be sufficient to support ERK-stimulated cell migration. Paradoxically, Y-27632 and RhoA-N19 increased ERK phosphorylation in MCF-7 cells, providing further evidence that ERK activation alone does not promote cell migration when Rho kinase is antagonized. When MCF-7 cell migration was stimulated by ERK-independent processes such as expression of the  3 integrin subunit or changing the substratum to type I collagen, Y-27632 and RhoA-N19 failed to inhibit the response. This study supports a model in which the Ras-ERK and Rho-Rho kinase pathways cooperate to promote cell migration. Neutralizing either pathway is sufficient to block the response to agents that stimulate cell migration by activating ERK.
2009 International Semiconductor Device Research Symposium, 2009
ABSTRACT In the conclusion, we demonstrated excellent uniformity and reliability of ZrO¿/HfO¿ bi-... more ABSTRACT In the conclusion, we demonstrated excellent uniformity and reliability of ZrO¿/HfO¿ bi-layers device. These excellent electrical and reliability properties of ZrO¿/HfO¿ bi-layers device show promise for future high density non-volatile memory application.
2012 4th IEEE International Memory Workshop, 2012
The metal-oxide filament-based resist (RRAM) have a preference toward bi-polar oper time, the mec... more The metal-oxide filament-based resist (RRAM) have a preference toward bi-polar oper time, the mechanisms behind the operational preference, and the related ramifications for va toward improved bipolar RRAM operations Experimental results support detailed models advantages of asymmetric oxygen vacancy engin yielding RRAM devices fabricated with the vacancy profile.
IEEE Electron Device Letters, 2008
To understand the influence of oxygen vacancies in HfO 2 on the electrical and reliability charac... more To understand the influence of oxygen vacancies in HfO 2 on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO 2 with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various postdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO 2. With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO 2 nMOSFET.
Applied Physics Letters, 2010
ABSTRACT We have investigated the bilayer structure of binary oxides such as HfOx and ZrOx for ap... more ABSTRACT We have investigated the bilayer structure of binary oxides such as HfOx and ZrOx for applications to resistance memory. The ZrOx/HfOx bilayer structure shows a lower reset current and operating voltage than an HfOx monolayer under dc sweep voltage. Furthermore, the bilayer structure exhibits a tight distribution of switching parameters, good switching endurance up to 105 cycles, and good data retention at 85 °C. The resistive switching mechanism of memory devices incorporating the ZrOx/HfOx bilayer structure can be attributed to the control of multiple conducting filaments through the occurrence of redox reactions at the tip of the localized filament.
2011 International Electron Devices Meeting, 2011
Ieee Electron Dev Lett, 2011
In this letter, we propose a model based on noise analysis for the filamentary switching mechanis... more In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having ZrOx/HfOx bilayer stacks. From the noise analysis results, we concluded that the current flowing during high-resistance state can be described as a trap-assisted current that flows through traps. It has been hypothesized that these traps are the cause of the instability of device parameters. To validate this, the noise analysis results of large-area devices were compared with those of small-area devices. As a consequence, we improved the uniformity of device parameters. Index Terms—Low-frequency noise, resistive random access memory (ReRAM), resistive memory.
Ieee Electron Device Letters, Jul 1, 2011
In this letter, we propose a model based on noise analysis for the filamentary switching mechanis... more In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having ZrOx/HfOx bilayer stacks. From the noise analysis results, we concluded that the current flowing during high-resistance state can be described as a trap-assisted current that flows through traps. It has been hypothesized that these traps are the cause of the instability of device parameters. To validate this, the noise analysis results of large-area devices were compared with those of small-area devices. As a consequence, we improved the uniformity of device parameters. Index Terms—Low-frequency noise, resistive random access memory (ReRAM), resistive memory.
IEEE Electron Device Letters, 2000
We investigated the state stability of the lowresistance state (LRS) in a resistive switching mem... more We investigated the state stability of the lowresistance state (LRS) in a resistive switching memory having a Pt/Cu : MoO x /GdO x /Pt structure. Various resistance values of LRS were accurately controlled using an external load resistor connected in series with the resistive memory device. We found that the retention time decreased with an increase in the resistance of LRS. We performed accelerating tests for resistance transition from a low-to a high-resistance state under temperatures ranging from 200 • C to 250 • C. A predicted resistance of LRS for a ten-year retention period at 85 • C was determined based on the Arrhenius law.
Electrochemical and Solid-State Letters, 2007
Chemical Engineering Science, 2012
Mixed solvents based on tertiary amine and sterically hindered amine were tested for CO 2 capture... more Mixed solvents based on tertiary amine and sterically hindered amine were tested for CO 2 capture performance with 2-methylpiperidine (2MPD) as an additive to improve the mass transfer rate of those absorbents, which have slow reaction rate with CO 2 . The absorbents are triethanolamime (TEA), Nmethyldiethanolamine (MDEA), and 2-amino-2-methylpropan-1-ol (AMP). A wetted wall column (WWC) was used to measure the mass transfer rate of the mixed solvents and the CO 2 loading was evaluated by vapor-liquid equilibrium (VLE) measurement. The mass transfer rate of both tertiary amines (TEA, MDEA) and sterically hindered amine (AMP) increased greatly as 2MPD was added. The AMP/2MPD containing 10 wt% of 2MPD showed the highest mass transfer rate of 3.92 Â 10 À 10 mol/ cm 2 s Pa, even higher than that of 30 wt% MEA (3.30 Â 10 À 10 mol/cm 2 s Pa). The CO 2 loading capacities of the mixed solvents were excellent compared to MEA. The absorption capacities of the AMP/2MPD and MDEA/2MPD were about 0.8 to 0.9, 1.7 times better than that of MEA (about 0.5).
Japanese Journal of Applied Physics, Nov 25, 2009
Microelectronic Engineering, Sep 1, 2007
The charge trapping and positive bias temperature instability (PBTI) are investigated at differen... more The charge trapping and positive bias temperature instability (PBTI) are investigated at different post deposition annealing conditions (PDA) in HfO 2 nMOSFET. Pulse based measurements (Pulsed Id-Vg and "Pulse on the fly") are performed to characterize charge trapping effect. Compared with NH 3 PDA, the NH 3 +O 2 PDA shows significant reduction of charge trap sites in HfO 2 , which causes the improvement of device performance and reliability. The significant improvement after additional annealing can be explained by the passivation of oxygen vacancies in HfO 2 .
Japanese Journal of Applied Physics, 2011
Applied Physics Letters, 2007
Materials showing reversible resistance switching between high-resistance state and low-resistanc... more Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today’s semiconductor technology. In this letter, the improvement of reproducible hysteresis and resistive switching characteristics of metal-La0.7Ca0.3MnO3-metal (M-LCMO-M) heterostructures is demonstrated. The fabrication of the M-LCMO-M heterostructures is compatible with the standard complementary metal-oxide semiconductor process. The effect of oxygen annealing on the improvement of the hysteresis and resistive switching is discussed. The good retention characteristics are exhibited in the M-LCMO-M heterostructures by the accurate controlling of the preparation parameters.
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
IEEE Access
Recently, as the development cycle of applications has been shortened, it is important to develop... more Recently, as the development cycle of applications has been shortened, it is important to develop rapid and accurate application testing technology. Since application testing requires a lot of cost, mobile GUI component detection technology using deep learning is essential to prevent the use of expensive human resources. In this paper, we shall propose a Clickable Object Detection Network (CODNet) for mobile component detection in a wide range of mobile screen resolutions. CODNet consists of three modules: feature extraction, deconvolution and prediction modules in order to provide performance improvement and scalability. Feature extraction module uses squeeze and excitation blocks to efficiently extract features by changing the ratio of the input image to 1:2 most close to that of mobile screen. Deconvolution module provides feature map of various sizes by upsampling feature map through top-down pathway and lateral connections. Prediction module selects an anchor size most suitable for the mobile environment using Anchor Transfer block among the set of anchor candidates obtained through the analysis of mobile dataset. Moreover, we shall show that our model achieves competitive performance in mean average precision on our dataset compared to the other models, and object detection performance is improved by building a new mobile screen dataset which consists of data collected from various resolutions and operating systems. INDEX TERMS Object detection, computer vision, mobile screen, deep neural networks.
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010
Journal of Crystal Growth, 2008
Journal of Biological Chemistry, 2002
Binding of the urokinase-type plasminogen activator (uPA) to its receptor activates diverse cell ... more Binding of the urokinase-type plasminogen activator (uPA) to its receptor activates diverse cell signaling pathways. How these signals are integrated so that cell physiology is altered remains unclear. In this study, we demonstrated that migration of MCF-7 breast cancer cells and HT-1080 fibrosarcoma cells on serum-coated surfaces is stimulated by agents that activate ERK, including uPA, epidermal growth factor, and constitutively active MEK1. The promigratory activity of these agents was entirely blocked not only by the MEK-specific antagonist PD098059, but also by antagonists of the Rho-Rho kinase pathway, including Y-27632 and dominant-negative RhoA (RhoA-N19). uPA did not significantly increase the level of GTP-bound RhoA, suggesting that the constitutive activity of the Rho-Rho kinase pathway may be sufficient to support ERK-stimulated cell migration. Paradoxically, Y-27632 and RhoA-N19 increased ERK phosphorylation in MCF-7 cells, providing further evidence that ERK activation alone does not promote cell migration when Rho kinase is antagonized. When MCF-7 cell migration was stimulated by ERK-independent processes such as expression of the  3 integrin subunit or changing the substratum to type I collagen, Y-27632 and RhoA-N19 failed to inhibit the response. This study supports a model in which the Ras-ERK and Rho-Rho kinase pathways cooperate to promote cell migration. Neutralizing either pathway is sufficient to block the response to agents that stimulate cell migration by activating ERK.
2009 International Semiconductor Device Research Symposium, 2009
ABSTRACT In the conclusion, we demonstrated excellent uniformity and reliability of ZrO¿/HfO¿ bi-... more ABSTRACT In the conclusion, we demonstrated excellent uniformity and reliability of ZrO¿/HfO¿ bi-layers device. These excellent electrical and reliability properties of ZrO¿/HfO¿ bi-layers device show promise for future high density non-volatile memory application.
2012 4th IEEE International Memory Workshop, 2012
The metal-oxide filament-based resist (RRAM) have a preference toward bi-polar oper time, the mec... more The metal-oxide filament-based resist (RRAM) have a preference toward bi-polar oper time, the mechanisms behind the operational preference, and the related ramifications for va toward improved bipolar RRAM operations Experimental results support detailed models advantages of asymmetric oxygen vacancy engin yielding RRAM devices fabricated with the vacancy profile.
IEEE Electron Device Letters, 2008
To understand the influence of oxygen vacancies in HfO 2 on the electrical and reliability charac... more To understand the influence of oxygen vacancies in HfO 2 on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO 2 with large-area device and conducting atomic force microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various postdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO 2. With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO 2 nMOSFET.
Applied Physics Letters, 2010
ABSTRACT We have investigated the bilayer structure of binary oxides such as HfOx and ZrOx for ap... more ABSTRACT We have investigated the bilayer structure of binary oxides such as HfOx and ZrOx for applications to resistance memory. The ZrOx/HfOx bilayer structure shows a lower reset current and operating voltage than an HfOx monolayer under dc sweep voltage. Furthermore, the bilayer structure exhibits a tight distribution of switching parameters, good switching endurance up to 105 cycles, and good data retention at 85 °C. The resistive switching mechanism of memory devices incorporating the ZrOx/HfOx bilayer structure can be attributed to the control of multiple conducting filaments through the occurrence of redox reactions at the tip of the localized filament.
2011 International Electron Devices Meeting, 2011
Ieee Electron Dev Lett, 2011
In this letter, we propose a model based on noise analysis for the filamentary switching mechanis... more In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having ZrOx/HfOx bilayer stacks. From the noise analysis results, we concluded that the current flowing during high-resistance state can be described as a trap-assisted current that flows through traps. It has been hypothesized that these traps are the cause of the instability of device parameters. To validate this, the noise analysis results of large-area devices were compared with those of small-area devices. As a consequence, we improved the uniformity of device parameters. Index Terms—Low-frequency noise, resistive random access memory (ReRAM), resistive memory.
Ieee Electron Device Letters, Jul 1, 2011
In this letter, we propose a model based on noise analysis for the filamentary switching mechanis... more In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having ZrOx/HfOx bilayer stacks. From the noise analysis results, we concluded that the current flowing during high-resistance state can be described as a trap-assisted current that flows through traps. It has been hypothesized that these traps are the cause of the instability of device parameters. To validate this, the noise analysis results of large-area devices were compared with those of small-area devices. As a consequence, we improved the uniformity of device parameters. Index Terms—Low-frequency noise, resistive random access memory (ReRAM), resistive memory.
IEEE Electron Device Letters, 2000
We investigated the state stability of the lowresistance state (LRS) in a resistive switching mem... more We investigated the state stability of the lowresistance state (LRS) in a resistive switching memory having a Pt/Cu : MoO x /GdO x /Pt structure. Various resistance values of LRS were accurately controlled using an external load resistor connected in series with the resistive memory device. We found that the retention time decreased with an increase in the resistance of LRS. We performed accelerating tests for resistance transition from a low-to a high-resistance state under temperatures ranging from 200 • C to 250 • C. A predicted resistance of LRS for a ten-year retention period at 85 • C was determined based on the Arrhenius law.
Electrochemical and Solid-State Letters, 2007
Chemical Engineering Science, 2012
Mixed solvents based on tertiary amine and sterically hindered amine were tested for CO 2 capture... more Mixed solvents based on tertiary amine and sterically hindered amine were tested for CO 2 capture performance with 2-methylpiperidine (2MPD) as an additive to improve the mass transfer rate of those absorbents, which have slow reaction rate with CO 2 . The absorbents are triethanolamime (TEA), Nmethyldiethanolamine (MDEA), and 2-amino-2-methylpropan-1-ol (AMP). A wetted wall column (WWC) was used to measure the mass transfer rate of the mixed solvents and the CO 2 loading was evaluated by vapor-liquid equilibrium (VLE) measurement. The mass transfer rate of both tertiary amines (TEA, MDEA) and sterically hindered amine (AMP) increased greatly as 2MPD was added. The AMP/2MPD containing 10 wt% of 2MPD showed the highest mass transfer rate of 3.92 Â 10 À 10 mol/ cm 2 s Pa, even higher than that of 30 wt% MEA (3.30 Â 10 À 10 mol/cm 2 s Pa). The CO 2 loading capacities of the mixed solvents were excellent compared to MEA. The absorption capacities of the AMP/2MPD and MDEA/2MPD were about 0.8 to 0.9, 1.7 times better than that of MEA (about 0.5).
Japanese Journal of Applied Physics, Nov 25, 2009
Microelectronic Engineering, Sep 1, 2007
The charge trapping and positive bias temperature instability (PBTI) are investigated at differen... more The charge trapping and positive bias temperature instability (PBTI) are investigated at different post deposition annealing conditions (PDA) in HfO 2 nMOSFET. Pulse based measurements (Pulsed Id-Vg and "Pulse on the fly") are performed to characterize charge trapping effect. Compared with NH 3 PDA, the NH 3 +O 2 PDA shows significant reduction of charge trap sites in HfO 2 , which causes the improvement of device performance and reliability. The significant improvement after additional annealing can be explained by the passivation of oxygen vacancies in HfO 2 .