Nicolae Dragutan - Academia.edu (original) (raw)

Nicolae Dragutan

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Papers by Nicolae Dragutan

Research paper thumbnail of Exciton luminescence in In 0.3Ga 0.7As/GaAs quantum well heterostructures

Physica E Low-dimensional Systems and Nanostructures

Emission maxima related to the recombination of excitons (e1–hh1, e1–lh1, e2–hh2, and e2–lh2) wer... more Emission maxima related to the recombination of excitons (e1–hh1, e1–lh1, e2–hh2, and e2–lh2) were observed in photoluminescence spectra of GaAs/In0.3Ga0.7As/GaAs quantum wells. The emission bands due to e1–hh1 and e1–lh1 transitions were found to have a doublet character explained by the exchange interaction of excitons in quantum wells. Emission bands due to radiative Eb–hh1, Eb–lh1 transitions in the buffer GaAs layer are observed in the region of 1.5eV.

Research paper thumbnail of Exciton luminescence in In 0.3Ga 0.7As/GaAs quantum well heterostructures

Physica E Low-dimensional Systems and Nanostructures

Emission maxima related to the recombination of excitons (e1–hh1, e1–lh1, e2–hh2, and e2–lh2) wer... more Emission maxima related to the recombination of excitons (e1–hh1, e1–lh1, e2–hh2, and e2–lh2) were observed in photoluminescence spectra of GaAs/In0.3Ga0.7As/GaAs quantum wells. The emission bands due to e1–hh1 and e1–lh1 transitions were found to have a doublet character explained by the exchange interaction of excitons in quantum wells. Emission bands due to radiative Eb–hh1, Eb–lh1 transitions in the buffer GaAs layer are observed in the region of 1.5eV.

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