N. Mainzer - Academia.edu (original) (raw)
Papers by N. Mainzer
Journal of Electronic Materials, 1997
CdTe/Hg1−xCdxTe heterostructures variously heat-treated and implanted with boron were studied by ... more CdTe/Hg1−xCdxTe heterostructures variously heat-treated and implanted with boron were studied by means of high-resolution x-ray diffraction. A novel procedure for simulating diffraction spectra was developed, which is based on direct summation of scattered waves across a heterostructure. In that routine, short-range variations of structural parameters, including concentration of the components, can be taken into account. The new approach allows precise
Defect and Diffusion Forum, 2000
Journal of Electronic Materials, 1995
ABSTRACT
Journal of Electronic Materials, 1995
ABSTRACT The metalorganic chemical vapor deposition (MOCVD) growth of CdTe on bulk n-type HgCdTe ... more ABSTRACT The metalorganic chemical vapor deposition (MOCVD) growth of CdTe on bulk n-type HgCdTe is reported and the resulting interfaces are investigated. Metalinsulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage and current-voltage characteristics. The MOCVD CdTe which was developed in this study, exhibits excellent dielectric, insulating, and mechano-chemical properties as well as interface properties, as exhibited by MIS devices where the MOCVD CdTe is the single insulator. Interfaces characterized by slight accumulation and a small or negligible hysteresis, are demonstrated. The passivation properties of CdTe/ HgCdTe heterostructures are predicted by modeling the band diagram of abrupt and graded P-CdTe/n-HgCdTe heterostructures. The analysis includes the effect of valence band offset and interface charges on the surface potentials at abrupt hetero-interface, for typical doping levels of the n-type layers and the MOCVD grown CdTe. In the case of graded heterojunctions, the effect of grading on the band diagram for various doping levels is studied, while taking into consideration a generally accepted valence band offset. The MOCVD CdTe with additional pre and post treatments and anneal form the basis of a photodiode with a new design. The new device architecture is based on a combination of a p-on-n homojunction in a single layer of n-type HgCdTe and the CdTe/HgCdTe heterostructure for passivation.
Journal of Electronic Materials, 2000
Journal of Electronic Materials, 1999
Journal of Crystal Growth, 1999
Structural and compositional parameters of the Hg \V Cd V Te layers grown by metal-organic vapor ... more Structural and compositional parameters of the Hg \V Cd V Te layers grown by metal-organic vapor deposition on (2 1 1)-oriented CdTe substrates were investigated by high-resolution X-ray diffraction, high-resolution scanning electron microscopy, energy dispersive spectroscopy in scanning electron microscopy and Fourier transform infra-red spectroscopy in a transmission mode. Divergence in Cd concentrations, obtained by different methods, is explained in terms of extended defects which cause lattice swelling of the Hg \V Cd V Te matrix. Strong correlation between defect density and lattice swelling was established by absolute measurements of lattice parameters (Bond method) and by direct defect imaging. It is proposed to use high-resolution Bond technique for nondestructive monitoring of the layer quality.
Journal of Applied Physics, 1997
... N. Mainzer, D. Shilo, E. Zolotoyabko, G. Bahir, A. Sher, K. Cytermann, R. Brener. Abstract. .... more ... N. Mainzer, D. Shilo, E. Zolotoyabko, G. Bahir, A. Sher, K. Cytermann, R. Brener. Abstract. ... HRXRD measurements were carried out with a Philips Materials Research X-ray Diffractometer (MRD), equipped with a sealed Cu x-ray tube and four-crystal Ge(220) monochromator. ...
IEEE Transactions on Nuclear Science, 1990
ABSTRACT Planar n+p Hg1-x CdxTe ( x =0.23) photodiodes passivated with ZnS were irradiated by a C... more ABSTRACT Planar n+p Hg1-x CdxTe ( x =0.23) photodiodes passivated with ZnS were irradiated by a Co60 gamma source. A strong increase in the reverse dark current was observed for doses above 0.3 Mrad(air). A similar effect is found by exposing the photodiodes to UV illumination from a high-pressure mercury lamp. By filtering the UV light it is shown that the degradation in the performance of the photodiodes is caused by the light or radiation absorbed in the ZnS layer above the implanted n-type region. C - V measurements of irradiated MIS devices showed a significant increase in the fast surface state density. Galvanomagnetic and lifetime measurements made on irradiated p-type HgCdTe layer showed no significant changes in the bulk transport parameters. Based on these findings, a model for the degradation mechanism is proposed
Applied Physics Letters, 2002
Journal of Crystal Growth, 1999
The ability of high-resolution X-ray diffraction to provide information on atomic diffusion is an... more The ability of high-resolution X-ray diffraction to provide information on atomic diffusion is analyzed, the focus being on the thin film crystalline structures important to modern microelectronics and optoelectronics. Special attention is paid to the Ti diffusion in waveguide layers of LiNbO crystals and to the Hg diffusion in the CdTe/Hg \V Cd V Te heterostructures. The depth-resolved concentration profiles obtained are compared with those measured by secondary ion mass spectrometry. The limitations of the new method, mainly due to the variable strain influence on the lattice parameters, are discussed. .Jt; 68.55.Nq
Journal of Electronic Materials, 1997
CdTe/Hg1−xCdxTe heterostructures variously heat-treated and implanted with boron were studied by ... more CdTe/Hg1−xCdxTe heterostructures variously heat-treated and implanted with boron were studied by means of high-resolution x-ray diffraction. A novel procedure for simulating diffraction spectra was developed, which is based on direct summation of scattered waves across a heterostructure. In that routine, short-range variations of structural parameters, including concentration of the components, can be taken into account. The new approach allows precise
Defect and Diffusion Forum, 2000
Journal of Electronic Materials, 1995
ABSTRACT
Journal of Electronic Materials, 1995
ABSTRACT The metalorganic chemical vapor deposition (MOCVD) growth of CdTe on bulk n-type HgCdTe ... more ABSTRACT The metalorganic chemical vapor deposition (MOCVD) growth of CdTe on bulk n-type HgCdTe is reported and the resulting interfaces are investigated. Metalinsulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage and current-voltage characteristics. The MOCVD CdTe which was developed in this study, exhibits excellent dielectric, insulating, and mechano-chemical properties as well as interface properties, as exhibited by MIS devices where the MOCVD CdTe is the single insulator. Interfaces characterized by slight accumulation and a small or negligible hysteresis, are demonstrated. The passivation properties of CdTe/ HgCdTe heterostructures are predicted by modeling the band diagram of abrupt and graded P-CdTe/n-HgCdTe heterostructures. The analysis includes the effect of valence band offset and interface charges on the surface potentials at abrupt hetero-interface, for typical doping levels of the n-type layers and the MOCVD grown CdTe. In the case of graded heterojunctions, the effect of grading on the band diagram for various doping levels is studied, while taking into consideration a generally accepted valence band offset. The MOCVD CdTe with additional pre and post treatments and anneal form the basis of a photodiode with a new design. The new device architecture is based on a combination of a p-on-n homojunction in a single layer of n-type HgCdTe and the CdTe/HgCdTe heterostructure for passivation.
Journal of Electronic Materials, 2000
Journal of Electronic Materials, 1999
Journal of Crystal Growth, 1999
Structural and compositional parameters of the Hg \V Cd V Te layers grown by metal-organic vapor ... more Structural and compositional parameters of the Hg \V Cd V Te layers grown by metal-organic vapor deposition on (2 1 1)-oriented CdTe substrates were investigated by high-resolution X-ray diffraction, high-resolution scanning electron microscopy, energy dispersive spectroscopy in scanning electron microscopy and Fourier transform infra-red spectroscopy in a transmission mode. Divergence in Cd concentrations, obtained by different methods, is explained in terms of extended defects which cause lattice swelling of the Hg \V Cd V Te matrix. Strong correlation between defect density and lattice swelling was established by absolute measurements of lattice parameters (Bond method) and by direct defect imaging. It is proposed to use high-resolution Bond technique for nondestructive monitoring of the layer quality.
Journal of Applied Physics, 1997
... N. Mainzer, D. Shilo, E. Zolotoyabko, G. Bahir, A. Sher, K. Cytermann, R. Brener. Abstract. .... more ... N. Mainzer, D. Shilo, E. Zolotoyabko, G. Bahir, A. Sher, K. Cytermann, R. Brener. Abstract. ... HRXRD measurements were carried out with a Philips Materials Research X-ray Diffractometer (MRD), equipped with a sealed Cu x-ray tube and four-crystal Ge(220) monochromator. ...
IEEE Transactions on Nuclear Science, 1990
ABSTRACT Planar n+p Hg1-x CdxTe ( x =0.23) photodiodes passivated with ZnS were irradiated by a C... more ABSTRACT Planar n+p Hg1-x CdxTe ( x =0.23) photodiodes passivated with ZnS were irradiated by a Co60 gamma source. A strong increase in the reverse dark current was observed for doses above 0.3 Mrad(air). A similar effect is found by exposing the photodiodes to UV illumination from a high-pressure mercury lamp. By filtering the UV light it is shown that the degradation in the performance of the photodiodes is caused by the light or radiation absorbed in the ZnS layer above the implanted n-type region. C - V measurements of irradiated MIS devices showed a significant increase in the fast surface state density. Galvanomagnetic and lifetime measurements made on irradiated p-type HgCdTe layer showed no significant changes in the bulk transport parameters. Based on these findings, a model for the degradation mechanism is proposed
Applied Physics Letters, 2002
Journal of Crystal Growth, 1999
The ability of high-resolution X-ray diffraction to provide information on atomic diffusion is an... more The ability of high-resolution X-ray diffraction to provide information on atomic diffusion is analyzed, the focus being on the thin film crystalline structures important to modern microelectronics and optoelectronics. Special attention is paid to the Ti diffusion in waveguide layers of LiNbO crystals and to the Hg diffusion in the CdTe/Hg \V Cd V Te heterostructures. The depth-resolved concentration profiles obtained are compared with those measured by secondary ion mass spectrometry. The limitations of the new method, mainly due to the variable strain influence on the lattice parameters, are discussed. .Jt; 68.55.Nq