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Research paper thumbnail of Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements

The current-voltage characteristics of metal/n-InAlAs Schottky diodes were determined in the temp... more The current-voltage characteristics of metal/n-InAlAs Schottky diodes were determined in the temperature range 90-300 K. Analysis of the measured characteristics allows the determination of the electrical parameters, the saturation current I 0 , the ideality factor n and the serial resistance R s . The results show an increase of the Schottky barrier height φ B0 and a decrease of the ideality factor n both with the increase of the temperature. The characteristics have been interpreted based on the thermionic emission (TE) mechanism with Gaussian distribution of the barrier heights of φ b0 is 0.96 eV and standard deviation s so is equal to 0.128 V. In addition, the ln(I 0 /T 2 ) vs. 1/T plot yields the effective Richardson constant of 4.65 Â 10 À 3 A cm À 2 K À 2 for the metal/InAlAs diode which is lower than the known value of 10.1 A cm À 2 K À 2 for InAlAs. The modified Richardson plot shows a straight line relationship between ln(I s /T 2 )-(q 2 s 2 so /2k 2 T 2 ) vs. 1000/T, and gives a value of A* ¼ 9.2 A cm À 2 K À 2 .

Research paper thumbnail of Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements

The current-voltage characteristics of metal/n-InAlAs Schottky diodes were determined in the temp... more The current-voltage characteristics of metal/n-InAlAs Schottky diodes were determined in the temperature range 90-300 K. Analysis of the measured characteristics allows the determination of the electrical parameters, the saturation current I 0 , the ideality factor n and the serial resistance R s . The results show an increase of the Schottky barrier height φ B0 and a decrease of the ideality factor n both with the increase of the temperature. The characteristics have been interpreted based on the thermionic emission (TE) mechanism with Gaussian distribution of the barrier heights of φ b0 is 0.96 eV and standard deviation s so is equal to 0.128 V. In addition, the ln(I 0 /T 2 ) vs. 1/T plot yields the effective Richardson constant of 4.65 Â 10 À 3 A cm À 2 K À 2 for the metal/InAlAs diode which is lower than the known value of 10.1 A cm À 2 K À 2 for InAlAs. The modified Richardson plot shows a straight line relationship between ln(I s /T 2 )-(q 2 s 2 so /2k 2 T 2 ) vs. 1000/T, and gives a value of A* ¼ 9.2 A cm À 2 K À 2 .

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