Nguyen Tran Nhat Duy B2103918 (original) (raw)

Nguyen Tran Nhat Duy B2103918

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Papers by Nguyen Tran Nhat Duy B2103918

Research paper thumbnail of GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers

Advanced Materials for Optics and Electronics, 1994

Research paper thumbnail of Highlights of recent results on HgCdTe thin film photoconductors

Semiconductor Science and Technology, 1991

A new economic route for IR photoconductor processing is presented with wavelengths ranging from ... more A new economic route for IR photoconductor processing is presented with wavelengths ranging from 3-12 mu m and higher. n-type epitaxial layers, grown either by liquid phase epitaxy (LPE) or metalorganic chemical vapour deposition (MOCVD), are demonstrated to be quite suitable for the photoconductive mode. Background-limited infrared performances have bean achieved at 200 K, 30 degrees FOV (field of view),

Research paper thumbnail of Substrate issues for the growth of mercury cadmium telluride

Journal of Electronic Materials, 1993

Close lattice matching and lattice compatibility with mercury cadmium telluride (MCT) make CdTe a... more Close lattice matching and lattice compatibility with mercury cadmium telluride (MCT) make CdTe and related alloys ideal substrate materials for growth of MCT layers for the purpose of making high-performance second-generation infrared detectors. However, the limitations in the ...

Research paper thumbnail of GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers

Advanced Materials for Optics and Electronics, 1994

Research paper thumbnail of Highlights of recent results on HgCdTe thin film photoconductors

Semiconductor Science and Technology, 1991

A new economic route for IR photoconductor processing is presented with wavelengths ranging from ... more A new economic route for IR photoconductor processing is presented with wavelengths ranging from 3-12 mu m and higher. n-type epitaxial layers, grown either by liquid phase epitaxy (LPE) or metalorganic chemical vapour deposition (MOCVD), are demonstrated to be quite suitable for the photoconductive mode. Background-limited infrared performances have bean achieved at 200 K, 30 degrees FOV (field of view),

Research paper thumbnail of Substrate issues for the growth of mercury cadmium telluride

Journal of Electronic Materials, 1993

Close lattice matching and lattice compatibility with mercury cadmium telluride (MCT) make CdTe a... more Close lattice matching and lattice compatibility with mercury cadmium telluride (MCT) make CdTe and related alloys ideal substrate materials for growth of MCT layers for the purpose of making high-performance second-generation infrared detectors. However, the limitations in the ...

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