PK Sundararajan PK - Academia.edu (original) (raw)
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Papers by PK Sundararajan PK
17th International Conference on VLSI Design. Proceedings.
In this paper, we describe a package-silicon co-design approach attempted for an RF integrated SO... more In this paper, we describe a package-silicon co-design approach attempted for an RF integrated SOC design. Extensive simulations were carried out to determine the sensitivity of different package layout parameters on signal integrity and noise related issues. These experiments helped in influencing the package layout design and the custom I/O cell design. The I/O and core bump locations, and the
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched o... more InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched on InP substrates and metamorphically on GaAs substrates by molecular beam epitaxy. Generic structures with a thin base of 500 Å and doped at 4×1019 cm-3 were chosen to support the frequency response required for advanced wireless and fiber-optic telecommunication products. Beryllium- and carbon-doped large-area devices were found to exhibit similar
With appropriate device structures, bined lithographi and epitaxial scaling of HBTs,RTDs and S ho... more With appropriate device structures, bined lithographi and epitaxial scaling of HBTs,RTDs and S hottky diodes results in rapid in reases in device bandwidths.0.1 ¹m InGaAs RTDs have os illated at 650 GHz,Submi ron heterojunction bipolar sistors (HBTs)fabri ated with substrate transfer pro-esses have obtained 21 dB unilateral power gain at 100 GHz;if extrapolated at -20 dB/decade,this corresponds to a 1.1 THz power-gain uto ®frequency.HBT current-gain uto ®frequencies as high as 300 GHz have been obtained.
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
Abstract We report high fmax and high current InP/InGaAs/InP DHBT in transferred-substrate techno... more Abstract We report high fmax and high current InP/InGaAs/InP DHBT in transferred-substrate technology. The common base device with equivalent emitter size of 128 um2 exhibits fmax of 330 GHz at the current of 100 mA. The common emitter device with emitter area of 64 ...
17th International Conference on VLSI Design. Proceedings.
In this paper, we describe a package-silicon co-design approach attempted for an RF integrated SO... more In this paper, we describe a package-silicon co-design approach attempted for an RF integrated SOC design. Extensive simulations were carried out to determine the sensitivity of different package layout parameters on signal integrity and noise related issues. These experiments helped in influencing the package layout design and the custom I/O cell design. The I/O and core bump locations, and the
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched o... more InAlAs/InGaAs/InP heterojunction bipolar transistor (HBT) structures were grown lattice-matched on InP substrates and metamorphically on GaAs substrates by molecular beam epitaxy. Generic structures with a thin base of 500 Å and doped at 4×1019 cm-3 were chosen to support the frequency response required for advanced wireless and fiber-optic telecommunication products. Beryllium- and carbon-doped large-area devices were found to exhibit similar
With appropriate device structures, bined lithographi and epitaxial scaling of HBTs,RTDs and S ho... more With appropriate device structures, bined lithographi and epitaxial scaling of HBTs,RTDs and S hottky diodes results in rapid in reases in device bandwidths.0.1 ¹m InGaAs RTDs have os illated at 650 GHz,Submi ron heterojunction bipolar sistors (HBTs)fabri ated with substrate transfer pro-esses have obtained 21 dB unilateral power gain at 100 GHz;if extrapolated at -20 dB/decade,this corresponds to a 1.1 THz power-gain uto ®frequency.HBT current-gain uto ®frequencies as high as 300 GHz have been obtained.
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
Abstract We report high fmax and high current InP/InGaAs/InP DHBT in transferred-substrate techno... more Abstract We report high fmax and high current InP/InGaAs/InP DHBT in transferred-substrate technology. The common base device with equivalent emitter size of 128 um2 exhibits fmax of 330 GHz at the current of 100 mA. The common emitter device with emitter area of 64 ...