Pierre Eyben - Academia.edu (original) (raw)
Papers by Pierre Eyben
MRS Proceedings, 2002
Scanning Spreading Resistance Microscopy (SSRM) is now widely used for two-dimensional doping pro... more Scanning Spreading Resistance Microscopy (SSRM) is now widely used for two-dimensional doping profiling with high spatial resolution. The need for a high force between the tip and the sample in order to obtain a good electrical contact, leads to a fast degradation of the tip (and the sample) while scanning. Tip damage is mainly due to the shear force occurring while scanning in contact mode at high forces leading to breakage (cleavage) of sharp tips or a rapid increase of tip radius (wear). The latter adversely affects the accuracy of the electrical measurements, as the contact radius is a determining parameter for quantification. The strong abrasive force also necessitates the use of tips composed of very hard material such as doped diamond, which has however a limited resistivity, and so far prevented the use of metallic probes. In addition the high force also prevents the simultaneous acquisition of high quality topography data. The solution to these problems is obtained by implementing the Modulated Force Principle (MFP). The latter consists of applying a variable (for instance pulsed) force while scanning, reducing the force during the lateral movement of the tip and synchronizing the electrical measurements with the high force periods. The latter results in lower lateral forces and introduces a quasi multi point contact mode. MFP also allows to obtain a better topography image by synchronizing the topography measurement with the low force part of the force cycle. The MFP leads to a drastic reduction of the surface and probe damage while maintaining high quality electrical data. The implementation of multiplexed detectors within the force cycle further enables the simultaneous acquisition of spreading resistance and topography during one scan, and/or the combination with multiple linear current detectors, capacitance sensors or tunneling current measurements.
The aggressive downscaling of FET devices (FinFET, NanowireFET, NanosheetFET, to name a few) in p... more The aggressive downscaling of FET devices (FinFET, NanowireFET, NanosheetFET, to name a few) in past years has put a great emphasis on the need to come up with properly calibrated process and device simulation tools to predict performances, suggest processing options and even understand failure mechanisms. As their modeling is complex with multiple calibration parameters, adequate two- and three-dimensional characterization techniques have been identified as a necessity to achieve an accurate modeling and calibration of the complex physical mechanisms for scaled devices. In such scaled devices even the smallest variations of the structure dimensions (i.e., width or length, local interconnect or spacer, source/drain epi volumes, etc.), carrier distribution and/or activation rate can cause significant variations in the electrical properties.
We have utilized the scalpel scanning spreading resistance microscopy (s-SSRM) technique in order... more We have utilized the scalpel scanning spreading resistance microscopy (s-SSRM) technique in order to successfully extract for the first time 3D carrier distributions into multi-channel horizontal gate-all-around (GAA) silicon nanowires nMOS and pMOS transistors. Good correlation with DIBL characteristics of the device could be established, assessing the validity of the measurements. Compared to FinFET control samples, the results give a first explanation of the ON-current performance increase of GAA pMOS device. TCAD simulations confirm indeed that the nanowire confinement has a positive impact on SiGe:Si interface resistance.
Springer eBooks, Apr 3, 2007
Scanning spreading resistance microscopy (SSRM) was performed in surrounding-gate transistors for... more Scanning spreading resistance microscopy (SSRM) was performed in surrounding-gate transistors for 70 nm dynamic random access memories. Sub-10 nm features were resolved using full diamond tips and different processing schemes were correlated with the electrical characteristics of the devices and the SSRM measurements. SSRM was found to be a powerful tool for the characterization and failure analysis determination of this device concept in the very small scale.
The main theoretical predictions for the SWNT band structure derived † For a SWNT (10,10) the sub... more The main theoretical predictions for the SWNT band structure derived † For a SWNT (10,10) the subband gap is about 0.6γ 0 = 1.7 eV.
Journal of vacuum science & technology, 2004
Scanning spreading resistance microscopy (SSRM) was performed in surrounding-gate transistors for... more Scanning spreading resistance microscopy (SSRM) was performed in surrounding-gate transistors for 70 nm dynamic random access memories. Sub-10 nm features were resolved using full diamond tips and different processing schemes were correlated with the electrical characteristics of the devices and the SSRM measurements. SSRM was found to be a powerful tool for the characterization and failure analysis determination of this device concept in the very small scale.
Electrical Atomic Force Microscopy for Nanoelectronics, 2019
Probing the distribution of charge carriers in semiconductor device structures is of crucial impo... more Probing the distribution of charge carriers in semiconductor device structures is of crucial importance to better understand semiconductor fabrication processes and how they affect the incorporation, diffusion and activation of dopants and hence the final device performance. Scanning spreading resistance microscopy (SSRM) has emerged as the most valuable technique for 2D and 3D carrier mapping in semiconductor device structures due to its excellent spatial resolution, sensitivity and ease of quantification. The present chapter first introduces the principles of the technique, thereby discussing the underlying physical mechanisms such as the nanometer-size probe-semiconductor contact. Faced with the stringent requirements imposed by advanced 3D device architectures, novel approaches and concepts such as 3D carrier profiling and fast Fourier transform-SSRM (FFT-SSRM) have been developed in the recent years. These methods aid in extending conventional SSRM toward quantitative carrier profiling in aggressively scaled 3D device structures which is illustrated on the example of selected relevant applications such as FinFETs and nanowire-based transistors.
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, 2007
2011 International Electron Devices Meeting, 2011
An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) with Laser annealin... more An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) with Laser annealing using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and
Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)
ABSTRACT
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2004
In this study we demonstrate the capabilities of scanning spreading resistance microscopy (SSRM),... more In this study we demonstrate the capabilities of scanning spreading resistance microscopy (SSRM), which is an atomic force microscope based technique, for two-dimensional (2D) carrier profiling with nanometer spatial resolution, high quantification accuracy, and high concentration sensitivity. As a test vehicle we discuss the application of SSRM on devices obtained from a 90 nm node complementary metal–oxide–semiconductor technology. Transistors processed in this technology, and with poly-gate lengths down to 70 nm have been analyzed using SSRM. Dedicated quantification software has been used to calculate carrier concentration profiles. The source/drain implants and the halo- and threshold voltage adjustment implants have been analyzed for different gate sizes in order to understand their impact on the 2D channel carrier profile. The SSRM results have been compared to the results of calibrated process simulators.
Atomistic Kinetic Monte Carlo (KMC) diffusion modeling is used for dopant diffusion and defect an... more Atomistic Kinetic Monte Carlo (KMC) diffusion modeling is used for dopant diffusion and defect analysis in ultra shallow junction formation in Si and SiGe. An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and higher As concentration in SiGe-channel. The difference of pocket diffusion is one of possible reason for the higher Vth mismatch for SiGe-channel with As pocket than for Si-channel. To avoid implant damage influence, Implant-Free SiGe channel-QW with B-doped SiGe epi for extension-S/D formation is used. KMC simulation and SSRM shows that B migration from B-doped SiGe raised-S/D to SiGe-channel can form S/D-extension overlap.
MRS Proceedings, 2002
Scanning Spreading Resistance Microscopy (SSRM) is now widely used for two-dimensional doping pro... more Scanning Spreading Resistance Microscopy (SSRM) is now widely used for two-dimensional doping profiling with high spatial resolution. The need for a high force between the tip and the sample in order to obtain a good electrical contact, leads to a fast degradation of the tip (and the sample) while scanning. Tip damage is mainly due to the shear force occurring while scanning in contact mode at high forces leading to breakage (cleavage) of sharp tips or a rapid increase of tip radius (wear). The latter adversely affects the accuracy of the electrical measurements, as the contact radius is a determining parameter for quantification. The strong abrasive force also necessitates the use of tips composed of very hard material such as doped diamond, which has however a limited resistivity, and so far prevented the use of metallic probes. In addition the high force also prevents the simultaneous acquisition of high quality topography data. The solution to these problems is obtained by imple...
MRS Proceedings, 2002
Scanning Spreading Resistance Microscopy (SSRM) is now widely used for two-dimensional doping pro... more Scanning Spreading Resistance Microscopy (SSRM) is now widely used for two-dimensional doping profiling with high spatial resolution. The need for a high force between the tip and the sample in order to obtain a good electrical contact, leads to a fast degradation of the tip (and the sample) while scanning. Tip damage is mainly due to the shear force occurring while scanning in contact mode at high forces leading to breakage (cleavage) of sharp tips or a rapid increase of tip radius (wear). The latter adversely affects the accuracy of the electrical measurements, as the contact radius is a determining parameter for quantification. The strong abrasive force also necessitates the use of tips composed of very hard material such as doped diamond, which has however a limited resistivity, and so far prevented the use of metallic probes. In addition the high force also prevents the simultaneous acquisition of high quality topography data. The solution to these problems is obtained by implementing the Modulated Force Principle (MFP). The latter consists of applying a variable (for instance pulsed) force while scanning, reducing the force during the lateral movement of the tip and synchronizing the electrical measurements with the high force periods. The latter results in lower lateral forces and introduces a quasi multi point contact mode. MFP also allows to obtain a better topography image by synchronizing the topography measurement with the low force part of the force cycle. The MFP leads to a drastic reduction of the surface and probe damage while maintaining high quality electrical data. The implementation of multiplexed detectors within the force cycle further enables the simultaneous acquisition of spreading resistance and topography during one scan, and/or the combination with multiple linear current detectors, capacitance sensors or tunneling current measurements.
The aggressive downscaling of FET devices (FinFET, NanowireFET, NanosheetFET, to name a few) in p... more The aggressive downscaling of FET devices (FinFET, NanowireFET, NanosheetFET, to name a few) in past years has put a great emphasis on the need to come up with properly calibrated process and device simulation tools to predict performances, suggest processing options and even understand failure mechanisms. As their modeling is complex with multiple calibration parameters, adequate two- and three-dimensional characterization techniques have been identified as a necessity to achieve an accurate modeling and calibration of the complex physical mechanisms for scaled devices. In such scaled devices even the smallest variations of the structure dimensions (i.e., width or length, local interconnect or spacer, source/drain epi volumes, etc.), carrier distribution and/or activation rate can cause significant variations in the electrical properties.
We have utilized the scalpel scanning spreading resistance microscopy (s-SSRM) technique in order... more We have utilized the scalpel scanning spreading resistance microscopy (s-SSRM) technique in order to successfully extract for the first time 3D carrier distributions into multi-channel horizontal gate-all-around (GAA) silicon nanowires nMOS and pMOS transistors. Good correlation with DIBL characteristics of the device could be established, assessing the validity of the measurements. Compared to FinFET control samples, the results give a first explanation of the ON-current performance increase of GAA pMOS device. TCAD simulations confirm indeed that the nanowire confinement has a positive impact on SiGe:Si interface resistance.
Springer eBooks, Apr 3, 2007
Scanning spreading resistance microscopy (SSRM) was performed in surrounding-gate transistors for... more Scanning spreading resistance microscopy (SSRM) was performed in surrounding-gate transistors for 70 nm dynamic random access memories. Sub-10 nm features were resolved using full diamond tips and different processing schemes were correlated with the electrical characteristics of the devices and the SSRM measurements. SSRM was found to be a powerful tool for the characterization and failure analysis determination of this device concept in the very small scale.
The main theoretical predictions for the SWNT band structure derived † For a SWNT (10,10) the sub... more The main theoretical predictions for the SWNT band structure derived † For a SWNT (10,10) the subband gap is about 0.6γ 0 = 1.7 eV.
Journal of vacuum science & technology, 2004
Scanning spreading resistance microscopy (SSRM) was performed in surrounding-gate transistors for... more Scanning spreading resistance microscopy (SSRM) was performed in surrounding-gate transistors for 70 nm dynamic random access memories. Sub-10 nm features were resolved using full diamond tips and different processing schemes were correlated with the electrical characteristics of the devices and the SSRM measurements. SSRM was found to be a powerful tool for the characterization and failure analysis determination of this device concept in the very small scale.
Electrical Atomic Force Microscopy for Nanoelectronics, 2019
Probing the distribution of charge carriers in semiconductor device structures is of crucial impo... more Probing the distribution of charge carriers in semiconductor device structures is of crucial importance to better understand semiconductor fabrication processes and how they affect the incorporation, diffusion and activation of dopants and hence the final device performance. Scanning spreading resistance microscopy (SSRM) has emerged as the most valuable technique for 2D and 3D carrier mapping in semiconductor device structures due to its excellent spatial resolution, sensitivity and ease of quantification. The present chapter first introduces the principles of the technique, thereby discussing the underlying physical mechanisms such as the nanometer-size probe-semiconductor contact. Faced with the stringent requirements imposed by advanced 3D device architectures, novel approaches and concepts such as 3D carrier profiling and fast Fourier transform-SSRM (FFT-SSRM) have been developed in the recent years. These methods aid in extending conventional SSRM toward quantitative carrier profiling in aggressively scaled 3D device structures which is illustrated on the example of selected relevant applications such as FinFETs and nanowire-based transistors.
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, 2007
2011 International Electron Devices Meeting, 2011
An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) with Laser annealin... more An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) with Laser annealing using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and
Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)
ABSTRACT
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2004
In this study we demonstrate the capabilities of scanning spreading resistance microscopy (SSRM),... more In this study we demonstrate the capabilities of scanning spreading resistance microscopy (SSRM), which is an atomic force microscope based technique, for two-dimensional (2D) carrier profiling with nanometer spatial resolution, high quantification accuracy, and high concentration sensitivity. As a test vehicle we discuss the application of SSRM on devices obtained from a 90 nm node complementary metal–oxide–semiconductor technology. Transistors processed in this technology, and with poly-gate lengths down to 70 nm have been analyzed using SSRM. Dedicated quantification software has been used to calculate carrier concentration profiles. The source/drain implants and the halo- and threshold voltage adjustment implants have been analyzed for different gate sizes in order to understand their impact on the 2D channel carrier profile. The SSRM results have been compared to the results of calibrated process simulators.
Atomistic Kinetic Monte Carlo (KMC) diffusion modeling is used for dopant diffusion and defect an... more Atomistic Kinetic Monte Carlo (KMC) diffusion modeling is used for dopant diffusion and defect analysis in ultra shallow junction formation in Si and SiGe. An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and higher As concentration in SiGe-channel. The difference of pocket diffusion is one of possible reason for the higher Vth mismatch for SiGe-channel with As pocket than for Si-channel. To avoid implant damage influence, Implant-Free SiGe channel-QW with B-doped SiGe epi for extension-S/D formation is used. KMC simulation and SSRM shows that B migration from B-doped SiGe raised-S/D to SiGe-channel can form S/D-extension overlap.
MRS Proceedings, 2002
Scanning Spreading Resistance Microscopy (SSRM) is now widely used for two-dimensional doping pro... more Scanning Spreading Resistance Microscopy (SSRM) is now widely used for two-dimensional doping profiling with high spatial resolution. The need for a high force between the tip and the sample in order to obtain a good electrical contact, leads to a fast degradation of the tip (and the sample) while scanning. Tip damage is mainly due to the shear force occurring while scanning in contact mode at high forces leading to breakage (cleavage) of sharp tips or a rapid increase of tip radius (wear). The latter adversely affects the accuracy of the electrical measurements, as the contact radius is a determining parameter for quantification. The strong abrasive force also necessitates the use of tips composed of very hard material such as doped diamond, which has however a limited resistivity, and so far prevented the use of metallic probes. In addition the high force also prevents the simultaneous acquisition of high quality topography data. The solution to these problems is obtained by imple...