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Papers by Praveen Dwivedi

Micro and Nanostructures, 2021

2020 International Conference on Emerging Frontiers in Electrical and Electronic Technologies (ICEFEET), 2020

Resistive Random Access Memories (RRAMs) or Memristor has been a revolution in current nonvolatil... more Resistive Random Access Memories (RRAMs) or Memristor has been a revolution in current nonvolatile memory technology. This work demonstrates an analytical model that shows the effect of applied bias on the metal-semiconductor interface to affect resistive switching of an RRAM device. The applied bias modulates the corresponding interface in terms of various interfacial electrical parameters. Besides, the change in bias affects the distribution of bulk defects primarily oxygen vacancies as well as non-lattice oxygen ions. This, in turn, also affects the corresponding resistance of bulk as well as other electrical parameters at the interface. Further conduction mechanism of the device with interfacial oxide formation as well as dissolution to impact resistive switching behavior has been elaborated.

2020 International Conference on Emerging Frontiers in Electrical and Electronic Technologies (ICEFEET), 2020

In this work, we investigate the effect of back-gate voltage on sensing metric of Dielectric Modu... more In this work, we investigate the effect of back-gate voltage on sensing metric of Dielectric Modulated (DM) Tunnel Field Effect Transistor (TFET) biosensor. Under this work we have investigated transfer characteristics, the variation of energy band, and hole concentration with back gate voltage and calculated the drain current sensitivity and selectivity for three different value of back-gate voltage. In this work, we have shown that with positive back gate voltage, drain current sensitivity is improved by nearly one order of magnitude and selectivity value is also enhanced by more than 2 times.

Lecture Notes in Mechanical Engineering, 2021

Buying personalized products at low cost and in a faster way is the demand of today’s customer. M... more Buying personalized products at low cost and in a faster way is the demand of today’s customer. Mass customization is such a strategy which aims to manufacture tailored products at mass production cost. Industry 4.0 technologies are shifting traditional manufacturing systems towards more flexible and autonomous systems which make MC more effective. It is required to study the barriers in implementing MC with Industry 4.0 because a failed MC strategy can incur huge losses both in terms of capital as well as in terms of customer count. Eleven barriers have been selected from literature review and consequent deliberations with industry experts. Fuzzy TOPSIS multi-criteria decision-making technique is used to rank the barriers in which three industry experts provided their input. The results show that uncertain environment for supply chain management, internal complexity and unavailability of skilled man power are the most influencing barriers in implementing MC is Industry 4.0 environment. The findings may enable decision-maker to appropriately focus on the most influential barriers than less influential while implementing MC in Industry 4.0 environment.

IEEE Sensors Journal, 2021

In this work, a new simulation approach of transient analysis on single cavity dielectric-modulat... more In this work, a new simulation approach of transient analysis on single cavity dielectric-modulated (DM) <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-type of tunnel field-effect transistor (TFET) is examined for biosensing applications. The device operation and performance are investigated using the 2D device simulator and results are well-calibrated with experimental data. In this work, we have examined DC transfer characteristics, the transient response of drain current, drain current sensitivity (<inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>), and selectivity (<inline-formula> <tex-math notation="LaTeX">$\Delta {S}$ </tex-math></inline-formula>). Focussing more on the transient results, we have obtained maximum sensitivity of orders greater than 10⁸ for APTES biomolecule with respect to air and a significant selectivity value in orders of 10³ for APTES with respect to Biotin biomolecule. The performance of the device in terms of selectivity can be further improved (~10⁴) by optimizing the back-gate bias, and therefore, the impact of back-gate bias has been analysed. The results for charged biomolecules and partially filled cavity are further investigated & highlighted. The DM <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-TFET biosensor shows a significant improvement in the results with the transient response for biosensing applications with the feasibility of operating at low voltages (gate voltage of −2.0 V, drain voltage of −0.5 V and back gate voltage 0 to 0.5 V).

IEEE Sensors Journal, 2021

In this work, an underlap structure of tunneling field-effect transistor (TFET) containing electr... more In this work, an underlap structure of tunneling field-effect transistor (TFET) containing electrolyte/watery solution is examined to enhance the Nernst limit (59 mV/pH) of sensitivity. After incorporating the electrolyte medium in TFET, effect of pH variation on device characteristics such as drain current vs front gate voltage, voltage sensitivity, and current sensitivity are investigated. The interface charge density at the oxide-silicon interface of TFET is obtained as a function of electrolyte pH from physics-based modelling. Voltage sensitivity value ~180 mV/pH that is greater than three times of Nernst limit of 59 mV/pH and current sensitivity value that is more than one decade per pH are observed for TFET based sensor. In order to validate the results, models used in TFET are well-calibrated with experimental data and the result of TFET are compared with inversion mode (IM) device. Results show that TFET gives superior performance than IM device; hence an underlap TFET can be a promising alternative for the next generation biosensor.

IEEE Transactions on Electron Devices, 2021

Perovskite-based solar cells with planar configuration have been perceived as an alternative and ... more Perovskite-based solar cells with planar configuration have been perceived as an alternative and attractive option for photovoltaic technology due to high power conversion efficiency (PCE). The performance of heterojunction-based devices is hindered by the recombination in the perovskite layers. The homojunction is suitable for further improvement in PCE due to the built-in electric field, which will enhance the transport of photogenerated charge carriers, therefore, reducing recombination losses. A detailed analysis of the homojunction-based device is needed for further improvement in PCE. In this study, the planar homojunction perovskite photovoltaic device has been simulated by solar cell capacitance simulator (SCAPS). Simulation analysis shows the dependence of PCE on the thickness and defects of the perovskite layer. Recombination analysis at the different junctions has been simulated using hypothetical interface layers at the respective junctions. It has been revealed that the interface defects influence the device performance. The proposed MAPbI3 homojunction-based devices have achieved more than 23% PCE, which is significantly higher than the existing planar heterojunction-based devices.

Engineering Research Express, 2020

In this work, we examined the impact of gate work-function and back-gate bias to enhance sensing ... more In this work, we examined the impact of gate work-function and back-gate bias to enhance sensing metrics of a Dielectric Modulated (DM) p-type Tunnel Field Effect Transistor (p-TFET) based biosensor. The sensing metrics, namely Sensitivity (S) and Selectivity (ΔS) are considerably improved by using a lower value of gate work-function and positive back gate voltages. It is shown that by appropriate selection of gate work-function and back gate bias, Band-to-Band Tunneling (BTBT) of carriers is reduced and a significant change in electrical characteristics is observed in a device with an empty cavity. Therefore, the relative change in the drain current due to the presence of biomolecules in the nanogap cavity is maximized. Results indicate a Sensitivity of ∼10 9 for 3-aminopropyltriethoxysilane (APTES) biomolecule, and Selectivity of ∼10 2 for APTES concerning Biotin biomolecule in an optimally designed p-TFET biosensor. The impact of location, as well as the charge of biomolecules, are also analyzed in this work. Results showcase the additional degree of freedom through device optimization which facilitates the tunability of sensing metrics for improved biosensor performance.

Micro and Nanostructures, 2021

2020 International Conference on Emerging Frontiers in Electrical and Electronic Technologies (ICEFEET), 2020

Resistive Random Access Memories (RRAMs) or Memristor has been a revolution in current nonvolatil... more Resistive Random Access Memories (RRAMs) or Memristor has been a revolution in current nonvolatile memory technology. This work demonstrates an analytical model that shows the effect of applied bias on the metal-semiconductor interface to affect resistive switching of an RRAM device. The applied bias modulates the corresponding interface in terms of various interfacial electrical parameters. Besides, the change in bias affects the distribution of bulk defects primarily oxygen vacancies as well as non-lattice oxygen ions. This, in turn, also affects the corresponding resistance of bulk as well as other electrical parameters at the interface. Further conduction mechanism of the device with interfacial oxide formation as well as dissolution to impact resistive switching behavior has been elaborated.

2020 International Conference on Emerging Frontiers in Electrical and Electronic Technologies (ICEFEET), 2020

In this work, we investigate the effect of back-gate voltage on sensing metric of Dielectric Modu... more In this work, we investigate the effect of back-gate voltage on sensing metric of Dielectric Modulated (DM) Tunnel Field Effect Transistor (TFET) biosensor. Under this work we have investigated transfer characteristics, the variation of energy band, and hole concentration with back gate voltage and calculated the drain current sensitivity and selectivity for three different value of back-gate voltage. In this work, we have shown that with positive back gate voltage, drain current sensitivity is improved by nearly one order of magnitude and selectivity value is also enhanced by more than 2 times.

Lecture Notes in Mechanical Engineering, 2021

Buying personalized products at low cost and in a faster way is the demand of today’s customer. M... more Buying personalized products at low cost and in a faster way is the demand of today’s customer. Mass customization is such a strategy which aims to manufacture tailored products at mass production cost. Industry 4.0 technologies are shifting traditional manufacturing systems towards more flexible and autonomous systems which make MC more effective. It is required to study the barriers in implementing MC with Industry 4.0 because a failed MC strategy can incur huge losses both in terms of capital as well as in terms of customer count. Eleven barriers have been selected from literature review and consequent deliberations with industry experts. Fuzzy TOPSIS multi-criteria decision-making technique is used to rank the barriers in which three industry experts provided their input. The results show that uncertain environment for supply chain management, internal complexity and unavailability of skilled man power are the most influencing barriers in implementing MC is Industry 4.0 environment. The findings may enable decision-maker to appropriately focus on the most influential barriers than less influential while implementing MC in Industry 4.0 environment.

IEEE Sensors Journal, 2021

In this work, a new simulation approach of transient analysis on single cavity dielectric-modulat... more In this work, a new simulation approach of transient analysis on single cavity dielectric-modulated (DM) <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-type of tunnel field-effect transistor (TFET) is examined for biosensing applications. The device operation and performance are investigated using the 2D device simulator and results are well-calibrated with experimental data. In this work, we have examined DC transfer characteristics, the transient response of drain current, drain current sensitivity (<inline-formula> <tex-math notation="LaTeX">${S}$ </tex-math></inline-formula>), and selectivity (<inline-formula> <tex-math notation="LaTeX">$\Delta {S}$ </tex-math></inline-formula>). Focussing more on the transient results, we have obtained maximum sensitivity of orders greater than 10⁸ for APTES biomolecule with respect to air and a significant selectivity value in orders of 10³ for APTES with respect to Biotin biomolecule. The performance of the device in terms of selectivity can be further improved (~10⁴) by optimizing the back-gate bias, and therefore, the impact of back-gate bias has been analysed. The results for charged biomolecules and partially filled cavity are further investigated & highlighted. The DM <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-TFET biosensor shows a significant improvement in the results with the transient response for biosensing applications with the feasibility of operating at low voltages (gate voltage of −2.0 V, drain voltage of −0.5 V and back gate voltage 0 to 0.5 V).

IEEE Sensors Journal, 2021

In this work, an underlap structure of tunneling field-effect transistor (TFET) containing electr... more In this work, an underlap structure of tunneling field-effect transistor (TFET) containing electrolyte/watery solution is examined to enhance the Nernst limit (59 mV/pH) of sensitivity. After incorporating the electrolyte medium in TFET, effect of pH variation on device characteristics such as drain current vs front gate voltage, voltage sensitivity, and current sensitivity are investigated. The interface charge density at the oxide-silicon interface of TFET is obtained as a function of electrolyte pH from physics-based modelling. Voltage sensitivity value ~180 mV/pH that is greater than three times of Nernst limit of 59 mV/pH and current sensitivity value that is more than one decade per pH are observed for TFET based sensor. In order to validate the results, models used in TFET are well-calibrated with experimental data and the result of TFET are compared with inversion mode (IM) device. Results show that TFET gives superior performance than IM device; hence an underlap TFET can be a promising alternative for the next generation biosensor.

IEEE Transactions on Electron Devices, 2021

Perovskite-based solar cells with planar configuration have been perceived as an alternative and ... more Perovskite-based solar cells with planar configuration have been perceived as an alternative and attractive option for photovoltaic technology due to high power conversion efficiency (PCE). The performance of heterojunction-based devices is hindered by the recombination in the perovskite layers. The homojunction is suitable for further improvement in PCE due to the built-in electric field, which will enhance the transport of photogenerated charge carriers, therefore, reducing recombination losses. A detailed analysis of the homojunction-based device is needed for further improvement in PCE. In this study, the planar homojunction perovskite photovoltaic device has been simulated by solar cell capacitance simulator (SCAPS). Simulation analysis shows the dependence of PCE on the thickness and defects of the perovskite layer. Recombination analysis at the different junctions has been simulated using hypothetical interface layers at the respective junctions. It has been revealed that the interface defects influence the device performance. The proposed MAPbI3 homojunction-based devices have achieved more than 23% PCE, which is significantly higher than the existing planar heterojunction-based devices.

Engineering Research Express, 2020

In this work, we examined the impact of gate work-function and back-gate bias to enhance sensing ... more In this work, we examined the impact of gate work-function and back-gate bias to enhance sensing metrics of a Dielectric Modulated (DM) p-type Tunnel Field Effect Transistor (p-TFET) based biosensor. The sensing metrics, namely Sensitivity (S) and Selectivity (ΔS) are considerably improved by using a lower value of gate work-function and positive back gate voltages. It is shown that by appropriate selection of gate work-function and back gate bias, Band-to-Band Tunneling (BTBT) of carriers is reduced and a significant change in electrical characteristics is observed in a device with an empty cavity. Therefore, the relative change in the drain current due to the presence of biomolecules in the nanogap cavity is maximized. Results indicate a Sensitivity of ∼10 9 for 3-aminopropyltriethoxysilane (APTES) biomolecule, and Selectivity of ∼10 2 for APTES concerning Biotin biomolecule in an optimally designed p-TFET biosensor. The impact of location, as well as the charge of biomolecules, are also analyzed in this work. Results showcase the additional degree of freedom through device optimization which facilitates the tunability of sensing metrics for improved biosensor performance.