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Papers by Priyanka Malik

Research paper thumbnail of TCAD RF Performance Investigation of V-Shaped Groove Gate MOSFET

International Journal For Multidisciplinary Research

For the first time, the RF performance analysis of a V-shaped grooved (V-GG) Gate MOSFET has been... more For the first time, the RF performance analysis of a V-shaped grooved (V-GG) Gate MOSFET has been presented and compared with the trapezoidal groove gate (TGG) and rectangular groove gate (RGG) MOSFETs, using ATLAS-3D device simulator, for future wireless and ULSI applications. The study reveals that V-GG MOSFET exhibits significantly enhanced performance as compared to its conventional counterparts in terms of the figure of merits (FOM): drain current, transconductance (gm), cut-off frequency (ft), maximum transducer power gain, stern stability factor (K), and, S-parameters.

Research paper thumbnail of Linearity-Distortion Analysis of GME-TRC MOSFET for High Performance and Wireless Applications

JSTS:Journal of Semiconductor Technology and Science, 2011

Research paper thumbnail of Evaluation of multi-layered gate design on GME-TRC MOSFET for wireless applications

… Electronics (ICSE), 2010

Abstract-In this paper, the impact of multi-layered gate design assimilation on Gate Material Eng... more Abstract-In this paper, the impact of multi-layered gate design assimilation on Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET has been studied for wireless applications in terms of linearity performance metrics, using device simulators: ATLAS ...

Research paper thumbnail of TCAD RF Performance Investigation of V-Shaped Groove Gate MOSFET

International Journal For Multidisciplinary Research

For the first time, the RF performance analysis of a V-shaped grooved (V-GG) Gate MOSFET has been... more For the first time, the RF performance analysis of a V-shaped grooved (V-GG) Gate MOSFET has been presented and compared with the trapezoidal groove gate (TGG) and rectangular groove gate (RGG) MOSFETs, using ATLAS-3D device simulator, for future wireless and ULSI applications. The study reveals that V-GG MOSFET exhibits significantly enhanced performance as compared to its conventional counterparts in terms of the figure of merits (FOM): drain current, transconductance (gm), cut-off frequency (ft), maximum transducer power gain, stern stability factor (K), and, S-parameters.

Research paper thumbnail of Linearity-Distortion Analysis of GME-TRC MOSFET for High Performance and Wireless Applications

JSTS:Journal of Semiconductor Technology and Science, 2011

Research paper thumbnail of Evaluation of multi-layered gate design on GME-TRC MOSFET for wireless applications

… Electronics (ICSE), 2010

Abstract-In this paper, the impact of multi-layered gate design assimilation on Gate Material Eng... more Abstract-In this paper, the impact of multi-layered gate design assimilation on Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET has been studied for wireless applications in terms of linearity performance metrics, using device simulators: ATLAS ...

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