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Papers by R. Dylewicz

Research paper thumbnail of High frequency mode-locking of diode lasers

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, 2010

The mode-locked operation of a 160 GHz passively mode-locked AlGaInAs laser using a compound cavi... more The mode-locked operation of a 160 GHz passively mode-locked AlGaInAs laser using a compound cavity formed by single deeply etched intracavity reflectors has been investigated. Stable harmonic mode-locking is observed in devices with ICRs which have relatively low reflectivity. Higher reflectivity leads to decoupling of the cavity leading first to unstable harmonic modelocking and eventually loss of the harmonic effect.

Research paper thumbnail of High average power (200 mW) 40 GHz mode-locked DBR lasers with integrated tapered optical amplifiers

Conference on Lasers and Electro-Optics 2012, 2012

ABSTRACT We report 40 GHz passively mode-locked 1.55 ensuremathmum AlGaInAs/InP lasers with integ... more ABSTRACT We report 40 GHz passively mode-locked 1.55 ensuremathmum AlGaInAs/InP lasers with integrated tapered semiconductor optical amplifiers producing nearly transform limited pulses with a pulse width of 4.3 ps and average output power of 200 mW.

Research paper thumbnail of Inductively coupled plasma etching of GaN using Cl2/He gases

Materials Science and Engineering: B, 2003

We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl 2 /Ar and Cl ... more We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl 2 /Ar and Cl 2 /He as the etching gases. A detailed study on the samples etched in different ICP power, RF power, process pressure and Cl 2 /Ar(He) mixing ratio was performed. It was found that n-GaN could be successfully etched by both Cl 2 /Ar and Cl 2 /He. The maximum etching rate could reach 8000 Å min (1 for n-GaN etched in Cl 2 /Ar and 8400 Å min (1 for n-GaN etched in Cl 2 /He. Furthermore, it was found that the specific contact resistance is 4.2 )/10 (4 and 1.37 )/10 (6 V-cm 2 for n-GaN etched by Cl 2 /Ar and Cl 2 /He, respectively. The smaller contact resistance is probably due to the lighter He which induce smaller plasma damages during ICP etching. #

Research paper thumbnail of Monolithic 40-GHz Passively Mode-Locked AlGaInAs–InP 1.55-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m MQW Laser With Surface-Etched Distributed Bragg Reflector

IEEE Photonics Technology Letters, 2000

ABSTRACT We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated wit... more ABSTRACT We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of 0.47.

Research paper thumbnail of High frequency mode-locking of diode lasers

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, 2010

The mode-locked operation of a 160 GHz passively mode-locked AlGaInAs laser using a compound cavi... more The mode-locked operation of a 160 GHz passively mode-locked AlGaInAs laser using a compound cavity formed by single deeply etched intracavity reflectors has been investigated. Stable harmonic mode-locking is observed in devices with ICRs which have relatively low reflectivity. Higher reflectivity leads to decoupling of the cavity leading first to unstable harmonic modelocking and eventually loss of the harmonic effect.

Research paper thumbnail of High average power (200 mW) 40 GHz mode-locked DBR lasers with integrated tapered optical amplifiers

Conference on Lasers and Electro-Optics 2012, 2012

ABSTRACT We report 40 GHz passively mode-locked 1.55 ensuremathmum AlGaInAs/InP lasers with integ... more ABSTRACT We report 40 GHz passively mode-locked 1.55 ensuremathmum AlGaInAs/InP lasers with integrated tapered semiconductor optical amplifiers producing nearly transform limited pulses with a pulse width of 4.3 ps and average output power of 200 mW.

Research paper thumbnail of Inductively coupled plasma etching of GaN using Cl2/He gases

Materials Science and Engineering: B, 2003

We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl 2 /Ar and Cl ... more We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl 2 /Ar and Cl 2 /He as the etching gases. A detailed study on the samples etched in different ICP power, RF power, process pressure and Cl 2 /Ar(He) mixing ratio was performed. It was found that n-GaN could be successfully etched by both Cl 2 /Ar and Cl 2 /He. The maximum etching rate could reach 8000 Å min (1 for n-GaN etched in Cl 2 /Ar and 8400 Å min (1 for n-GaN etched in Cl 2 /He. Furthermore, it was found that the specific contact resistance is 4.2 )/10 (4 and 1.37 )/10 (6 V-cm 2 for n-GaN etched by Cl 2 /Ar and Cl 2 /He, respectively. The smaller contact resistance is probably due to the lighter He which induce smaller plasma damages during ICP etching. #

Research paper thumbnail of Monolithic 40-GHz Passively Mode-Locked AlGaInAs–InP 1.55-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m MQW Laser With Surface-Etched Distributed Bragg Reflector

IEEE Photonics Technology Letters, 2000

ABSTRACT We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated wit... more ABSTRACT We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of 0.47.

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