R. Mansano - Academia.edu (original) (raw)
Papers by R. Mansano
Monocrystalline silicon was etched isotropically in a Reactive ion Etching system to obtain deep ... more Monocrystalline silicon was etched isotropically in a Reactive ion Etching system to obtain deep trenches. The resulting profiles were analyzed and compared with profiles obtained from isotropic wet etching of silicon. When looking at a two-dimensional cross-section profile, both etching types yield similar results. However, when looking at the third dimension, one observes that the corners have a round shape for wet etching and remain sharp for dry etching processes. When etching trenches with depths of 80 μm, one observes that for dry etching processes, a re-entrant profile is obtained, what is not the case for wet etching. The first difference can be explained by a difference in etch rate limiting mechanism: reaction limited dry etching versus diffusion limited wet etching. The re-entrant profile can be explained by the lower local density of arriving reactive species just beneath the mask.
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ECS Transactions, 2010
a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plas... more a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plasma concentration were used as well as two power and two total pressure conditions. The film characterization, by RBS and FTIR, enabled the identification and quantization of the incorporated species in the film. The hydrogen content found was related with the dark conductivity and optical absorption for the determination of the best deposition conditions for thin film transistor fabrication.
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ABSTRACT
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Journal of Physics: Conference Series, 2015
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Physica B: Condensed Matter, 2020
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18th Congress of the International Commission for Optics, 1999
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2008 19th EAEEIE Annual Conference, 2008
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physica status solidi (a), 2013
ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications su... more ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications such as high-efficiency solar cells, light-emitting diodes, laser diodes, and high-frequency transistors. The ability to fabricate both p-type and n-type InN is essential for the production of these devices; however, InN is naturally an n-type semiconductor. This work's main objective is to study the influence of the deposition process using nitrogen and hydrogen on the optical and electrical properties of RF reactive sputtered InN films. During deposition, a hydrogen percentage is incorporated with the InN and the hydrogen works like a source of acceptors. Hydrogen incorporation becomes interesting as these materials are developed for photovoltaic and optoelectronic application. Fourier transform infrared spectra showed the presence of In–N bonding and In–H bonding.
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Catalysis Today, 2004
We studied zirconium nitride layers prepared by reactive direct current (dc) magnetron sputtering... more We studied zirconium nitride layers prepared by reactive direct current (dc) magnetron sputtering and synthesized with nitrogen gas flow ranging from 1 to 9sccm (standard centimeter cube per minute) N2. We measured their electrical resistivity and recorded their X-ray diffraction patterns as well as their RBS spectra and optical reflectance curves. Thus we could determine their crystallographic structure, their nitrogen
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Applied Surface Science, 2004
The use of polymeric medical devices has stimulated the development of new sterilization methods.... more The use of polymeric medical devices has stimulated the development of new sterilization methods. The traditional techniques rely on ethylene oxide, but there are many questions concerning the carcinogenic properties of the ethylene oxide residues adsorbed on the materials ...
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Proceedings of the First International Conference on Biomedical Electronics and Devices, 2008
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physica status solidi (a), 2013
ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications su... more ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications such as high-efficiency solar cells, light-emitting diodes, laser diodes, and high-frequency transistors. The ability to fabricate both p-type and n-type InN is essential for the production of these devices; however, InN is naturally an n-type semiconductor. This work's main objective is to study the influence of the deposition process using nitrogen and hydrogen on the optical and electrical properties of RF reactive sputtered InN films. During deposition, a hydrogen percentage is incorporated with the InN and the hydrogen works like a source of acceptors. Hydrogen incorporation becomes interesting as these materials are developed for photovoltaic and optoelectronic application. Fourier transform infrared spectra showed the presence of In–N bonding and In–H bonding.
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001
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PDA journal of pharmaceutical science and technology / PDA
We investigated the influence of variable parameters of plasma sterilization and compared its eff... more We investigated the influence of variable parameters of plasma sterilization and compared its effectiveness with that of ethylene oxide using a reactive ion etching plasma reactor at 13.56 MHz. Gases tested were pure oxygen and oxygen-hydrogen peroxide mixtures in 190/10, 180/20, and 160/40 sccm ratios with constant gas flow at 200 sccm, pressure at 0.100 torr, radio-frequency power at 25 W, 50 W, 100 W, and 150 W, and temperature below 60 degrees C. Ethylene oxide sterilization was performed using 450 mg/L at 55 degrees C, 60% humidity, and -0.65 and 0.60 kgf/cm2 pressure. The biological indicator was Bacillus atrophaeus ATCC 9372, with exposure times of 3 to 120 min. Observed D values were 215.91, 55.55, 9.19, and 2.98 min for pure oxygen plasma at 25 W, 50 W, 100 W, and 150 W, respectively. Oxygen-hydrogen peroxide plasma produced D values of 6.41 min (190/10), 6.47 min (180/20), and 4.02 min (160/40) at 100 W and 1.47 min (190/10), 3.11 min (180/20), and 1.94 min (160/40) at 150...
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International Journal of Pharmaceutics, 2007
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Modern Physics Letters B, 2002
ABSTRACT The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are w... more ABSTRACT The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are well known for exhibiting high electrical resistivity, low dielectric constant, high mechanical hardness, low friction coefficient, low superficial roughness and also for being inert. In this paper, we produced fluorinated DLC films (a-C:F), and studied the effect of adding CF4 on the above-mentioned properties of DLC films. These films were produced by a reactive RF magnetron sputtering system using a target of pure carbon in stable graphite allotrope. We performed measurements of electrical characteristic curves of capacitance as a function of applied tension (C-V) and current as a function of the applied tension (I-V). We showed the dielectric constant (k) and the resistivity (ρ) as functions of the CF4 concentration. On films with 65% CF4, we found that k = 2.7, and on films with 70% CF4, ρ = 12.3 × 1011 Ω cm. The value of the electrical breakdown field to films with 70% CF4 is 5.3 × 106 V/cm.
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
ABSTRACT
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Journal of Materials Science, 2010
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Monocrystalline silicon was etched isotropically in a Reactive ion Etching system to obtain deep ... more Monocrystalline silicon was etched isotropically in a Reactive ion Etching system to obtain deep trenches. The resulting profiles were analyzed and compared with profiles obtained from isotropic wet etching of silicon. When looking at a two-dimensional cross-section profile, both etching types yield similar results. However, when looking at the third dimension, one observes that the corners have a round shape for wet etching and remain sharp for dry etching processes. When etching trenches with depths of 80 μm, one observes that for dry etching processes, a re-entrant profile is obtained, what is not the case for wet etching. The first difference can be explained by a difference in etch rate limiting mechanism: reaction limited dry etching versus diffusion limited wet etching. The re-entrant profile can be explained by the lower local density of arriving reactive species just beneath the mask.
Bookmarks Related papers MentionsView impact
ECS Transactions, 2010
a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plas... more a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plasma concentration were used as well as two power and two total pressure conditions. The film characterization, by RBS and FTIR, enabled the identification and quantization of the incorporated species in the film. The hydrogen content found was related with the dark conductivity and optical absorption for the determination of the best deposition conditions for thin film transistor fabrication.
Bookmarks Related papers MentionsView impact
ABSTRACT
Bookmarks Related papers MentionsView impact
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Journal of Physics: Conference Series, 2015
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Physica B: Condensed Matter, 2020
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18th Congress of the International Commission for Optics, 1999
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2008 19th EAEEIE Annual Conference, 2008
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physica status solidi (a), 2013
ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications su... more ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications such as high-efficiency solar cells, light-emitting diodes, laser diodes, and high-frequency transistors. The ability to fabricate both p-type and n-type InN is essential for the production of these devices; however, InN is naturally an n-type semiconductor. This work's main objective is to study the influence of the deposition process using nitrogen and hydrogen on the optical and electrical properties of RF reactive sputtered InN films. During deposition, a hydrogen percentage is incorporated with the InN and the hydrogen works like a source of acceptors. Hydrogen incorporation becomes interesting as these materials are developed for photovoltaic and optoelectronic application. Fourier transform infrared spectra showed the presence of In–N bonding and In–H bonding.
Bookmarks Related papers MentionsView impact
Catalysis Today, 2004
We studied zirconium nitride layers prepared by reactive direct current (dc) magnetron sputtering... more We studied zirconium nitride layers prepared by reactive direct current (dc) magnetron sputtering and synthesized with nitrogen gas flow ranging from 1 to 9sccm (standard centimeter cube per minute) N2. We measured their electrical resistivity and recorded their X-ray diffraction patterns as well as their RBS spectra and optical reflectance curves. Thus we could determine their crystallographic structure, their nitrogen
Bookmarks Related papers MentionsView impact
Applied Surface Science, 2004
The use of polymeric medical devices has stimulated the development of new sterilization methods.... more The use of polymeric medical devices has stimulated the development of new sterilization methods. The traditional techniques rely on ethylene oxide, but there are many questions concerning the carcinogenic properties of the ethylene oxide residues adsorbed on the materials ...
Bookmarks Related papers MentionsView impact
Proceedings of the First International Conference on Biomedical Electronics and Devices, 2008
Bookmarks Related papers MentionsView impact
physica status solidi (a), 2013
ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications su... more ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications such as high-efficiency solar cells, light-emitting diodes, laser diodes, and high-frequency transistors. The ability to fabricate both p-type and n-type InN is essential for the production of these devices; however, InN is naturally an n-type semiconductor. This work's main objective is to study the influence of the deposition process using nitrogen and hydrogen on the optical and electrical properties of RF reactive sputtered InN films. During deposition, a hydrogen percentage is incorporated with the InN and the hydrogen works like a source of acceptors. Hydrogen incorporation becomes interesting as these materials are developed for photovoltaic and optoelectronic application. Fourier transform infrared spectra showed the presence of In–N bonding and In–H bonding.
Bookmarks Related papers MentionsView impact
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001
Bookmarks Related papers MentionsView impact
PDA journal of pharmaceutical science and technology / PDA
We investigated the influence of variable parameters of plasma sterilization and compared its eff... more We investigated the influence of variable parameters of plasma sterilization and compared its effectiveness with that of ethylene oxide using a reactive ion etching plasma reactor at 13.56 MHz. Gases tested were pure oxygen and oxygen-hydrogen peroxide mixtures in 190/10, 180/20, and 160/40 sccm ratios with constant gas flow at 200 sccm, pressure at 0.100 torr, radio-frequency power at 25 W, 50 W, 100 W, and 150 W, and temperature below 60 degrees C. Ethylene oxide sterilization was performed using 450 mg/L at 55 degrees C, 60% humidity, and -0.65 and 0.60 kgf/cm2 pressure. The biological indicator was Bacillus atrophaeus ATCC 9372, with exposure times of 3 to 120 min. Observed D values were 215.91, 55.55, 9.19, and 2.98 min for pure oxygen plasma at 25 W, 50 W, 100 W, and 150 W, respectively. Oxygen-hydrogen peroxide plasma produced D values of 6.41 min (190/10), 6.47 min (180/20), and 4.02 min (160/40) at 100 W and 1.47 min (190/10), 3.11 min (180/20), and 1.94 min (160/40) at 150...
Bookmarks Related papers MentionsView impact
International Journal of Pharmaceutics, 2007
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Modern Physics Letters B, 2002
ABSTRACT The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are w... more ABSTRACT The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are well known for exhibiting high electrical resistivity, low dielectric constant, high mechanical hardness, low friction coefficient, low superficial roughness and also for being inert. In this paper, we produced fluorinated DLC films (a-C:F), and studied the effect of adding CF4 on the above-mentioned properties of DLC films. These films were produced by a reactive RF magnetron sputtering system using a target of pure carbon in stable graphite allotrope. We performed measurements of electrical characteristic curves of capacitance as a function of applied tension (C-V) and current as a function of the applied tension (I-V). We showed the dielectric constant (k) and the resistivity (ρ) as functions of the CF4 concentration. On films with 65% CF4, we found that k = 2.7, and on films with 70% CF4, ρ = 12.3 × 1011 Ω cm. The value of the electrical breakdown field to films with 70% CF4 is 5.3 × 106 V/cm.
Bookmarks Related papers MentionsView impact
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
ABSTRACT
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Journal of Materials Science, 2010
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