R. Mansano - Academia.edu (original) (raw)

Papers by R. Mansano

Research paper thumbnail of Silicon wall profiles generated by isotropic dry etching processes

Monocrystalline silicon was etched isotropically in a Reactive ion Etching system to obtain deep ... more Monocrystalline silicon was etched isotropically in a Reactive ion Etching system to obtain deep trenches. The resulting profiles were analyzed and compared with profiles obtained from isotropic wet etching of silicon. When looking at a two-dimensional cross-section profile, both etching types yield similar results. However, when looking at the third dimension, one observes that the corners have a round shape for wet etching and remain sharp for dry etching processes. When etching trenches with depths of 80 μm, one observes that for dry etching processes, a re-entrant profile is obtained, what is not the case for wet etching. The first difference can be explained by a difference in etch rate limiting mechanism: reaction limited dry etching versus diffusion limited wet etching. The re-entrant profile can be explained by the lower local density of arriving reactive species just beneath the mask.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of a-Si:H Thin Films Deposited at Low Temperature by Sputtering

ECS Transactions, 2010

a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plas... more a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plasma concentration were used as well as two power and two total pressure conditions. The film characterization, by RBS and FTIR, enabled the identification and quantization of the incorporated species in the film. The hydrogen content found was related with the dark conductivity and optical absorption for the determination of the best deposition conditions for thin film transistor fabrication.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Deposição e caracterização de filmes finos de WC para fins mecânicos

ABSTRACT

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Comparative effectiveness of reactive ion etching plasma and ethylene oxide sterilization technology

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Obtention of polymeric membrane fuel cells by low pressure plasma technique: Evaluation of total cell efficiency by function on the amount of platinum and the thickness of the deposited carbon support

Journal of Physics: Conference Series, 2015

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Caracterização de filmes finos de nitreto de carbono formados por RF magnetron sputtering

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Investigation of the local environment of SnO2 in an applied magnetic field

Physica B: Condensed Matter, 2020

Bookmarks Related papers MentionsView impact

Research paper thumbnail of <title>Multiple-line generation over high angle using hybrid parabolic profile and binary surface-relief phase element</title>

18th Congress of the International Commission for Optics, 1999

Bookmarks Related papers MentionsView impact

Research paper thumbnail of International cooperation to develop low cost equipment devoted to microelectronics laboratory education

2008 19th EAEEIE Annual Conference, 2008

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Hydrogen influence on the electrical properties of sputtered InN thin films

physica status solidi (a), 2013

ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications su... more ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications such as high-efficiency solar cells, light-emitting diodes, laser diodes, and high-frequency transistors. The ability to fabricate both p-type and n-type InN is essential for the production of these devices; however, InN is naturally an n-type semiconductor. This work&#39;s main objective is to study the influence of the deposition process using nitrogen and hydrogen on the optical and electrical properties of RF reactive sputtered InN films. During deposition, a hydrogen percentage is incorporated with the InN and the hydrogen works like a source of acceptors. Hydrogen incorporation becomes interesting as these materials are developed for photovoltaic and optoelectronic application. Fourier transform infrared spectra showed the presence of In–N bonding and In–H bonding.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Optical and electrical properties of sputtered ZrN compounds

Catalysis Today, 2004

We studied zirconium nitride layers prepared by reactive direct current (dc) magnetron sputtering... more We studied zirconium nitride layers prepared by reactive direct current (dc) magnetron sputtering and synthesized with nitrogen gas flow ranging from 1 to 9sccm (standard centimeter cube per minute) N2. We measured their electrical resistivity and recorded their X-ray diffraction patterns as well as their RBS spectra and optical reflectance curves. Thus we could determine their crystallographic structure, their nitrogen

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Sterilization by oxygen plasma

Applied Surface Science, 2004

The use of polymeric medical devices has stimulated the development of new sterilization methods.... more The use of polymeric medical devices has stimulated the development of new sterilization methods. The traditional techniques rely on ethylene oxide, but there are many questions concerning the carcinogenic properties of the ethylene oxide residues adsorbed on the materials ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Study of Oxygen Plasma for Application in Sterilization Processes

Proceedings of the First International Conference on Biomedical Electronics and Devices, 2008

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Hydrogen influence on the electrical properties of sputtered InN thin films

physica status solidi (a), 2013

ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications su... more ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications such as high-efficiency solar cells, light-emitting diodes, laser diodes, and high-frequency transistors. The ability to fabricate both p-type and n-type InN is essential for the production of these devices; however, InN is naturally an n-type semiconductor. This work&#39;s main objective is to study the influence of the deposition process using nitrogen and hydrogen on the optical and electrical properties of RF reactive sputtered InN films. During deposition, a hydrogen percentage is incorporated with the InN and the hydrogen works like a source of acceptors. Hydrogen incorporation becomes interesting as these materials are developed for photovoltaic and optoelectronic application. Fourier transform infrared spectra showed the presence of In–N bonding and In–H bonding.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Light element analysis using ERDA method with an ionization chamber

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Comparative sterilization effectiveness of plasma in O2-H2O2 mixtures and ethylene oxide treatment

PDA journal of pharmaceutical science and technology / PDA

We investigated the influence of variable parameters of plasma sterilization and compared its eff... more We investigated the influence of variable parameters of plasma sterilization and compared its effectiveness with that of ethylene oxide using a reactive ion etching plasma reactor at 13.56 MHz. Gases tested were pure oxygen and oxygen-hydrogen peroxide mixtures in 190/10, 180/20, and 160/40 sccm ratios with constant gas flow at 200 sccm, pressure at 0.100 torr, radio-frequency power at 25 W, 50 W, 100 W, and 150 W, and temperature below 60 degrees C. Ethylene oxide sterilization was performed using 450 mg/L at 55 degrees C, 60% humidity, and -0.65 and 0.60 kgf/cm2 pressure. The biological indicator was Bacillus atrophaeus ATCC 9372, with exposure times of 3 to 120 min. Observed D values were 215.91, 55.55, 9.19, and 2.98 min for pure oxygen plasma at 25 W, 50 W, 100 W, and 150 W, respectively. Oxygen-hydrogen peroxide plasma produced D values of 6.41 min (190/10), 6.47 min (180/20), and 4.02 min (160/40) at 100 W and 1.47 min (190/10), 3.11 min (180/20), and 1.94 min (160/40) at 150...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Sterilization by Pure Oxygen Plasma and by Oxygen - Hydrogen Peroxide Plasma: an Efficacy Study

International Journal of Pharmaceutics, 2007

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Study of Fluorine Addition Influence in the Dielectric Constant of Diamond-Like Carbon Thin Film Deposited by Reactive Sputtering

Modern Physics Letters B, 2002

ABSTRACT The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are w... more ABSTRACT The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are well known for exhibiting high electrical resistivity, low dielectric constant, high mechanical hardness, low friction coefficient, low superficial roughness and also for being inert. In this paper, we produced fluorinated DLC films (a-C:F), and studied the effect of adding CF4 on the above-mentioned properties of DLC films. These films were produced by a reactive RF magnetron sputtering system using a target of pure carbon in stable graphite allotrope. We performed measurements of electrical characteristic curves of capacitance as a function of applied tension (C-V) and current as a function of the applied tension (I-V). We showed the dielectric constant (k) and the resistivity (ρ) as functions of the CF4 concentration. On films with 65% CF4, we found that k = 2.7, and on films with 70% CF4, ρ = 12.3 × 1011 Ω cm. The value of the electrical breakdown field to films with 70% CF4 is 5.3 × 106 V/cm.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Importance of fluorine surface diffusion for plasma etching of silicon

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002

ABSTRACT

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Piezoresistive response of ITO films deposited at room temperature by magnetron sputtering

Journal of Materials Science, 2010

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Silicon wall profiles generated by isotropic dry etching processes

Monocrystalline silicon was etched isotropically in a Reactive ion Etching system to obtain deep ... more Monocrystalline silicon was etched isotropically in a Reactive ion Etching system to obtain deep trenches. The resulting profiles were analyzed and compared with profiles obtained from isotropic wet etching of silicon. When looking at a two-dimensional cross-section profile, both etching types yield similar results. However, when looking at the third dimension, one observes that the corners have a round shape for wet etching and remain sharp for dry etching processes. When etching trenches with depths of 80 μm, one observes that for dry etching processes, a re-entrant profile is obtained, what is not the case for wet etching. The first difference can be explained by a difference in etch rate limiting mechanism: reaction limited dry etching versus diffusion limited wet etching. The re-entrant profile can be explained by the lower local density of arriving reactive species just beneath the mask.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of a-Si:H Thin Films Deposited at Low Temperature by Sputtering

ECS Transactions, 2010

a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plas... more a-Si:H thin films were deposited by reactive sputtering so that different hydrogen and argon plasma concentration were used as well as two power and two total pressure conditions. The film characterization, by RBS and FTIR, enabled the identification and quantization of the incorporated species in the film. The hydrogen content found was related with the dark conductivity and optical absorption for the determination of the best deposition conditions for thin film transistor fabrication.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Deposição e caracterização de filmes finos de WC para fins mecânicos

ABSTRACT

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Comparative effectiveness of reactive ion etching plasma and ethylene oxide sterilization technology

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Obtention of polymeric membrane fuel cells by low pressure plasma technique: Evaluation of total cell efficiency by function on the amount of platinum and the thickness of the deposited carbon support

Journal of Physics: Conference Series, 2015

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Caracterização de filmes finos de nitreto de carbono formados por RF magnetron sputtering

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Investigation of the local environment of SnO2 in an applied magnetic field

Physica B: Condensed Matter, 2020

Bookmarks Related papers MentionsView impact

Research paper thumbnail of <title>Multiple-line generation over high angle using hybrid parabolic profile and binary surface-relief phase element</title>

18th Congress of the International Commission for Optics, 1999

Bookmarks Related papers MentionsView impact

Research paper thumbnail of International cooperation to develop low cost equipment devoted to microelectronics laboratory education

2008 19th EAEEIE Annual Conference, 2008

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Hydrogen influence on the electrical properties of sputtered InN thin films

physica status solidi (a), 2013

ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications su... more ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications such as high-efficiency solar cells, light-emitting diodes, laser diodes, and high-frequency transistors. The ability to fabricate both p-type and n-type InN is essential for the production of these devices; however, InN is naturally an n-type semiconductor. This work&#39;s main objective is to study the influence of the deposition process using nitrogen and hydrogen on the optical and electrical properties of RF reactive sputtered InN films. During deposition, a hydrogen percentage is incorporated with the InN and the hydrogen works like a source of acceptors. Hydrogen incorporation becomes interesting as these materials are developed for photovoltaic and optoelectronic application. Fourier transform infrared spectra showed the presence of In–N bonding and In–H bonding.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Optical and electrical properties of sputtered ZrN compounds

Catalysis Today, 2004

We studied zirconium nitride layers prepared by reactive direct current (dc) magnetron sputtering... more We studied zirconium nitride layers prepared by reactive direct current (dc) magnetron sputtering and synthesized with nitrogen gas flow ranging from 1 to 9sccm (standard centimeter cube per minute) N2. We measured their electrical resistivity and recorded their X-ray diffraction patterns as well as their RBS spectra and optical reflectance curves. Thus we could determine their crystallographic structure, their nitrogen

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Sterilization by oxygen plasma

Applied Surface Science, 2004

The use of polymeric medical devices has stimulated the development of new sterilization methods.... more The use of polymeric medical devices has stimulated the development of new sterilization methods. The traditional techniques rely on ethylene oxide, but there are many questions concerning the carcinogenic properties of the ethylene oxide residues adsorbed on the materials ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Study of Oxygen Plasma for Application in Sterilization Processes

Proceedings of the First International Conference on Biomedical Electronics and Devices, 2008

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Hydrogen influence on the electrical properties of sputtered InN thin films

physica status solidi (a), 2013

ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications su... more ABSTRACT The narrow indium nitride (InN) bandgap has generated great interest for applications such as high-efficiency solar cells, light-emitting diodes, laser diodes, and high-frequency transistors. The ability to fabricate both p-type and n-type InN is essential for the production of these devices; however, InN is naturally an n-type semiconductor. This work&#39;s main objective is to study the influence of the deposition process using nitrogen and hydrogen on the optical and electrical properties of RF reactive sputtered InN films. During deposition, a hydrogen percentage is incorporated with the InN and the hydrogen works like a source of acceptors. Hydrogen incorporation becomes interesting as these materials are developed for photovoltaic and optoelectronic application. Fourier transform infrared spectra showed the presence of In–N bonding and In–H bonding.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Light element analysis using ERDA method with an ionization chamber

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Comparative sterilization effectiveness of plasma in O2-H2O2 mixtures and ethylene oxide treatment

PDA journal of pharmaceutical science and technology / PDA

We investigated the influence of variable parameters of plasma sterilization and compared its eff... more We investigated the influence of variable parameters of plasma sterilization and compared its effectiveness with that of ethylene oxide using a reactive ion etching plasma reactor at 13.56 MHz. Gases tested were pure oxygen and oxygen-hydrogen peroxide mixtures in 190/10, 180/20, and 160/40 sccm ratios with constant gas flow at 200 sccm, pressure at 0.100 torr, radio-frequency power at 25 W, 50 W, 100 W, and 150 W, and temperature below 60 degrees C. Ethylene oxide sterilization was performed using 450 mg/L at 55 degrees C, 60% humidity, and -0.65 and 0.60 kgf/cm2 pressure. The biological indicator was Bacillus atrophaeus ATCC 9372, with exposure times of 3 to 120 min. Observed D values were 215.91, 55.55, 9.19, and 2.98 min for pure oxygen plasma at 25 W, 50 W, 100 W, and 150 W, respectively. Oxygen-hydrogen peroxide plasma produced D values of 6.41 min (190/10), 6.47 min (180/20), and 4.02 min (160/40) at 100 W and 1.47 min (190/10), 3.11 min (180/20), and 1.94 min (160/40) at 150...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Sterilization by Pure Oxygen Plasma and by Oxygen - Hydrogen Peroxide Plasma: an Efficacy Study

International Journal of Pharmaceutics, 2007

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Study of Fluorine Addition Influence in the Dielectric Constant of Diamond-Like Carbon Thin Film Deposited by Reactive Sputtering

Modern Physics Letters B, 2002

ABSTRACT The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are w... more ABSTRACT The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are well known for exhibiting high electrical resistivity, low dielectric constant, high mechanical hardness, low friction coefficient, low superficial roughness and also for being inert. In this paper, we produced fluorinated DLC films (a-C:F), and studied the effect of adding CF4 on the above-mentioned properties of DLC films. These films were produced by a reactive RF magnetron sputtering system using a target of pure carbon in stable graphite allotrope. We performed measurements of electrical characteristic curves of capacitance as a function of applied tension (C-V) and current as a function of the applied tension (I-V). We showed the dielectric constant (k) and the resistivity (ρ) as functions of the CF4 concentration. On films with 65% CF4, we found that k = 2.7, and on films with 70% CF4, ρ = 12.3 × 1011 Ω cm. The value of the electrical breakdown field to films with 70% CF4 is 5.3 × 106 V/cm.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Importance of fluorine surface diffusion for plasma etching of silicon

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002

ABSTRACT

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Piezoresistive response of ITO films deposited at room temperature by magnetron sputtering

Journal of Materials Science, 2010

Bookmarks Related papers MentionsView impact