Raymond Quéré - Academia.edu (original) (raw)

Papers by Raymond Quéré

Research paper thumbnail of A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits

This paper describes the direct coupling between a physical device simulator and a circuit simula... more This paper describes the direct coupling between a physical device simulator and a circuit simulator based on the Harmonic Balance (Hit) technique. The semiconductor device equations adopted concern a GaInP/GaAs HBT for power applications. A full computation of the Jacobian matrix for convergence improvement has been implemented. It provides us with a powerful tool for the codesign of devices and circuits which has been successfully tested to simulate the power transfer characteristic of a device operating in class AB,

Research paper thumbnail of Thermal Modelling of Microwave Bipolar Transistor from 3D finite Element Simulation

Research paper thumbnail of Non linear electrothermal modelisation of LDMOS power transistor : on the definition scaling rules

International audienceno abstrac

Research paper thumbnail of Un outil pour la CAO des circuits microondes non linéaires attaqués par des générateurs non harmoniques

Annals of Telecommunications, 1988

Un outil pour la CAO des circuits microondes non lin6aires attaqu6s par des g6n6rateurs non harmo... more Un outil pour la CAO des circuits microondes non lin6aires attaqu6s par des g6n6rateurs non harmoniques Michel GAYRAL * Edouard NGOYA *

Research paper thumbnail of A general program for steady state, stability, and FM noise analysis of microwave oscillators

IEEE International Digest on Microwave Symposium

Two novel algorithms are presented for nonlinear autonomous circuit CAD. In the first, a symbolic... more Two novel algorithms are presented for nonlinear autonomous circuit CAD. In the first, a symbolic simulator is used to calculated the possible oscillation frequencies of the circuit, and the high-level behavior of the oscillator is determined by the harmonic balance method extended to autonomous circuits. The second algorithm is based on the conversion matrix method, which allows simulation of nonlinear

Research paper thumbnail of From semiconductor modeling and characterization to nonlinear microwave circuit design

Research paper thumbnail of Evolution des techniques de conception des circuits RF et microondes : Intégration et Expertise

Research paper thumbnail of Electro-thermal modeling and measurements of SiGe HBTs

This paper deals with a comparison between electro-thermal nonlinear simulation and measurements ... more This paper deals with a comparison between electro-thermal nonlinear simulation and measurements performed on a Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs). The first part describes the simulation approach developed with ANSYS 3D Finite Element (FE) model. The second part describes the measurement process. This one is based on Low Frequency electrical impedance measurements generally achieved with S-parameters Vector Network Analyzer setup. Finally the FE model is compared to a Cauer circuit extracted to represent the measured data.

Research paper thumbnail of Nonlinear Stability Analysis of MMIC Power Amplifiers

28th European Microwave Conference, 1998, 1998

... S.Mons, RQudri, T.Peyretaillade, J.Obregon I.RC.OM UMR66-15 - C.NKRS. ... However, compting e... more ... S.Mons, RQudri, T.Peyretaillade, J.Obregon I.RC.OM UMR66-15 - C.NKRS. ... However, compting e eigenvalues ofa oomplex system is a difficult task so that the Nyquist criterion is applied to the characteristic determinant A(jw)=dd[rO)] when a real perturbation w is appliedt This ...

Research paper thumbnail of A new GaN-based high-speed and high-power switching circuit for envelope-tracking modulators

International Journal of Microwave and Wireless Technologies, 2013

In this paper, we report a new high-speed and high-power switching circuit based on GaN HEMT'... more In this paper, we report a new high-speed and high-power switching circuit based on GaN HEMT's. The elementary switching cell, composed of two GaN HEMT's and two resistors, acts like a power threshold comparator with high-output voltage. Theoretical analysis of static and dynamic circuit operation points out the dependence of efficiency and switching speed to the main circuit elements. Four switching cells are then combined together thanks to SiC Schottky diodes to design a multi-level power switch that can be used as a power supply modulator for envelope tracking power amplifiers. The designed four-level supply modulator, based on Nitronex GaN HEMT's, exhibits more than 75% of efficiency for an envelope signal up to 4 MHz, a switching frequency of 20 MHz and output voltages in the range of 12–30 V.

Research paper thumbnail of Nonlinear amplifier modeling taking into account HF memory frequency

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)

A model to describe the nonlinear behavior of a power amplifier is proposed, which extends the po... more A model to describe the nonlinear behavior of a power amplifier is proposed, which extends the power series expansion to take into account frequency dispersion of a single tone and a two-tone input signal. Behavorial model is commonly estimated according to CW measurements but, even if this model is accurate for one-tone signal, no predictions can be done for intermodulation

Research paper thumbnail of Advances on modelling and characterization of microwave devices at XLIM laboratory

2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008

ABSTRACT

Research paper thumbnail of Caractérisation électrique de l'impédance thermique de transistors Bipolaires

Research paper thumbnail of Comprehensive approach to the nonlinear design and modelling of microwave circuits

1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167)

ABSTRACT

Research paper thumbnail of SCERNE, an efficient CAD tool for the modeling of RF and Mixed blocks

2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2011

This paper gives an overview of the SCERNE project, started in February 2008 for a duration of 3 ... more This paper gives an overview of the SCERNE project, started in February 2008 for a duration of 3 years. The main objective is to allow significant advances in the CAD tools dedicated to RxTx radar chains. From circuit to system, a CAD platform gives a unified solution for efficient bottom-up analysis, allowing to extract advanced behavioral models of RF blocks,

Research paper thumbnail of Electronic design assistance tool for circuit optimization: application to microwave power amplifiers

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

An electronic design automation tool is being developed to assist the designer in optimizing RF a... more An electronic design automation tool is being developed to assist the designer in optimizing RF and microwave nonlinear circuits. This paper reports the first version of this software dedicated to power amplifier design. This tool does not intend to simulate nonlinear circuits because CAD tools are already available and reliable. It intends to develop an efficient and predictive design process from reusable knowledge databases (components, circuits, methodologies, etc.). The reported assistance tool has been implemented into an open computing environment using the DB2 database, C++ programs, template files, Java interfaces and the ADS software for simulation. The design process starts off from circuit specifications. Either, the history database is explored to find already carried out circuits demonstrating performances close to specifications or the component database is explored to select appropriate active device(s) and to generate a first-cut amplifier architecture meeting the requested specifications. Then, this assistance tool guides the designer at each step by proposing suited methods and specific helps (substitute generators, matching, nonlinear stability, linearity, etc.) up to yield analysis

Research paper thumbnail of Nonlinear transistor modelling based on measurements results

Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits

... This is one of the major gods of the pulsed measurement technique. The curves represented in ... more ... This is one of the major gods of the pulsed measurement technique. The curves represented in the fig-13 allow the comparison between the intrinsic transconductance obtained from I(V) pulsed measurements and the transconductance extracted from pulsed S-parameters ...

Research paper thumbnail of An Electrothermal Model of High Power HBTs for High Efficiency L/S Band Amplifiers

2008 European Microwave Integrated Circuit Conference, 2008

This paper deals with an electrothermal model of high power heterojunction bipolar transistor (HB... more This paper deals with an electrothermal model of high power heterojunction bipolar transistor (HBT) intended for CAD. The first section describes the model topology and sets the implemented equations that allow to take into account of the physical phenomena. The model also integrates scaling rules function of emitter length (W) and number of fingers (N). For the thermal aspect, low

Research paper thumbnail of An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities

2006 European Microwave Integrated Circuits Conference, 2006

A new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is proposed. This non-l... more A new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is proposed. This non-linear electrothermal and fully scalable model was designed with closed-form equations in order to reduce simulation times in complex circuits like High Power Amplifiers (HPA) and to have good convergence capabilities at high compression levels. This paper presents model topology and shows parameters extraction from pulsed I-V, pulsed [SI-parameters measurements. Simulations performed on a two-stage HPA with 20 HBTs devices have demonstrated the good convergence properties as well as a good correlation with measurements.

Research paper thumbnail of Model order reduction of linear and nonlinear 3D thermal finite-element description of microwave devices for circuit analysis

International Journal of RF and Microwave Computer-Aided Engineering, 2005

Electrothermal models of power devices are necessary for the accurate analysis of their performan... more Electrothermal models of power devices are necessary for the accurate analysis of their performances. For this reason, this article deals with a methodology to obtain an electrothermal model based on a reduced model of a 3D thermal finite-element (FE) description for its thermal part and on pulsed electrical measurements for its electrical part. The reduced thermal model is based on the Ritz vector approach, which ensures a steady-state solution in every case. An equivalent SPICE subcircuit implementation for circuit simulation is proposed and discussed. An extension of the method to a nonlinear reduced model based on the Kirchoff transformation is also proposed. The complete models have been successfully implemented in circuit simulators for several HBT or PHEMT device structures. Many results concerning devices and circuits are presented, including simulation of both the static and dynamic collector-current collapse in HBTs due to the thermal phenomenon. Moreover, the results in terms of the circuit for an X-band high-power amplifier are also presented. As for the nonlinear approach, results concerning an homogeneous structure is given.

Research paper thumbnail of A direct coupling between the semiconductor equations describing a GaInP/GaAs HBT in a circuit simulator for the co-design of microwave devices and circuits

This paper describes the direct coupling between a physical device simulator and a circuit simula... more This paper describes the direct coupling between a physical device simulator and a circuit simulator based on the Harmonic Balance (Hit) technique. The semiconductor device equations adopted concern a GaInP/GaAs HBT for power applications. A full computation of the Jacobian matrix for convergence improvement has been implemented. It provides us with a powerful tool for the codesign of devices and circuits which has been successfully tested to simulate the power transfer characteristic of a device operating in class AB,

Research paper thumbnail of Thermal Modelling of Microwave Bipolar Transistor from 3D finite Element Simulation

Research paper thumbnail of Non linear electrothermal modelisation of LDMOS power transistor : on the definition scaling rules

International audienceno abstrac

Research paper thumbnail of Un outil pour la CAO des circuits microondes non linéaires attaqués par des générateurs non harmoniques

Annals of Telecommunications, 1988

Un outil pour la CAO des circuits microondes non lin6aires attaqu6s par des g6n6rateurs non harmo... more Un outil pour la CAO des circuits microondes non lin6aires attaqu6s par des g6n6rateurs non harmoniques Michel GAYRAL * Edouard NGOYA *

Research paper thumbnail of A general program for steady state, stability, and FM noise analysis of microwave oscillators

IEEE International Digest on Microwave Symposium

Two novel algorithms are presented for nonlinear autonomous circuit CAD. In the first, a symbolic... more Two novel algorithms are presented for nonlinear autonomous circuit CAD. In the first, a symbolic simulator is used to calculated the possible oscillation frequencies of the circuit, and the high-level behavior of the oscillator is determined by the harmonic balance method extended to autonomous circuits. The second algorithm is based on the conversion matrix method, which allows simulation of nonlinear

Research paper thumbnail of From semiconductor modeling and characterization to nonlinear microwave circuit design

Research paper thumbnail of Evolution des techniques de conception des circuits RF et microondes : Intégration et Expertise

Research paper thumbnail of Electro-thermal modeling and measurements of SiGe HBTs

This paper deals with a comparison between electro-thermal nonlinear simulation and measurements ... more This paper deals with a comparison between electro-thermal nonlinear simulation and measurements performed on a Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs). The first part describes the simulation approach developed with ANSYS 3D Finite Element (FE) model. The second part describes the measurement process. This one is based on Low Frequency electrical impedance measurements generally achieved with S-parameters Vector Network Analyzer setup. Finally the FE model is compared to a Cauer circuit extracted to represent the measured data.

Research paper thumbnail of Nonlinear Stability Analysis of MMIC Power Amplifiers

28th European Microwave Conference, 1998, 1998

... S.Mons, RQudri, T.Peyretaillade, J.Obregon I.RC.OM UMR66-15 - C.NKRS. ... However, compting e... more ... S.Mons, RQudri, T.Peyretaillade, J.Obregon I.RC.OM UMR66-15 - C.NKRS. ... However, compting e eigenvalues ofa oomplex system is a difficult task so that the Nyquist criterion is applied to the characteristic determinant A(jw)=dd[rO)] when a real perturbation w is appliedt This ...

Research paper thumbnail of A new GaN-based high-speed and high-power switching circuit for envelope-tracking modulators

International Journal of Microwave and Wireless Technologies, 2013

In this paper, we report a new high-speed and high-power switching circuit based on GaN HEMT'... more In this paper, we report a new high-speed and high-power switching circuit based on GaN HEMT's. The elementary switching cell, composed of two GaN HEMT's and two resistors, acts like a power threshold comparator with high-output voltage. Theoretical analysis of static and dynamic circuit operation points out the dependence of efficiency and switching speed to the main circuit elements. Four switching cells are then combined together thanks to SiC Schottky diodes to design a multi-level power switch that can be used as a power supply modulator for envelope tracking power amplifiers. The designed four-level supply modulator, based on Nitronex GaN HEMT's, exhibits more than 75% of efficiency for an envelope signal up to 4 MHz, a switching frequency of 20 MHz and output voltages in the range of 12–30 V.

Research paper thumbnail of Nonlinear amplifier modeling taking into account HF memory frequency

2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)

A model to describe the nonlinear behavior of a power amplifier is proposed, which extends the po... more A model to describe the nonlinear behavior of a power amplifier is proposed, which extends the power series expansion to take into account frequency dispersion of a single tone and a two-tone input signal. Behavorial model is commonly estimated according to CW measurements but, even if this model is accurate for one-tone signal, no predictions can be done for intermodulation

Research paper thumbnail of Advances on modelling and characterization of microwave devices at XLIM laboratory

2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008

ABSTRACT

Research paper thumbnail of Caractérisation électrique de l'impédance thermique de transistors Bipolaires

Research paper thumbnail of Comprehensive approach to the nonlinear design and modelling of microwave circuits

1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167)

ABSTRACT

Research paper thumbnail of SCERNE, an efficient CAD tool for the modeling of RF and Mixed blocks

2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2011

This paper gives an overview of the SCERNE project, started in February 2008 for a duration of 3 ... more This paper gives an overview of the SCERNE project, started in February 2008 for a duration of 3 years. The main objective is to allow significant advances in the CAD tools dedicated to RxTx radar chains. From circuit to system, a CAD platform gives a unified solution for efficient bottom-up analysis, allowing to extract advanced behavioral models of RF blocks,

Research paper thumbnail of Electronic design assistance tool for circuit optimization: application to microwave power amplifiers

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

An electronic design automation tool is being developed to assist the designer in optimizing RF a... more An electronic design automation tool is being developed to assist the designer in optimizing RF and microwave nonlinear circuits. This paper reports the first version of this software dedicated to power amplifier design. This tool does not intend to simulate nonlinear circuits because CAD tools are already available and reliable. It intends to develop an efficient and predictive design process from reusable knowledge databases (components, circuits, methodologies, etc.). The reported assistance tool has been implemented into an open computing environment using the DB2 database, C++ programs, template files, Java interfaces and the ADS software for simulation. The design process starts off from circuit specifications. Either, the history database is explored to find already carried out circuits demonstrating performances close to specifications or the component database is explored to select appropriate active device(s) and to generate a first-cut amplifier architecture meeting the requested specifications. Then, this assistance tool guides the designer at each step by proposing suited methods and specific helps (substitute generators, matching, nonlinear stability, linearity, etc.) up to yield analysis

Research paper thumbnail of Nonlinear transistor modelling based on measurements results

Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits

... This is one of the major gods of the pulsed measurement technique. The curves represented in ... more ... This is one of the major gods of the pulsed measurement technique. The curves represented in the fig-13 allow the comparison between the intrinsic transconductance obtained from I(V) pulsed measurements and the transconductance extracted from pulsed S-parameters ...

Research paper thumbnail of An Electrothermal Model of High Power HBTs for High Efficiency L/S Band Amplifiers

2008 European Microwave Integrated Circuit Conference, 2008

This paper deals with an electrothermal model of high power heterojunction bipolar transistor (HB... more This paper deals with an electrothermal model of high power heterojunction bipolar transistor (HBT) intended for CAD. The first section describes the model topology and sets the implemented equations that allow to take into account of the physical phenomena. The model also integrates scaling rules function of emitter length (W) and number of fingers (N). For the thermal aspect, low

Research paper thumbnail of An Electrothermal Model for GaInP/GaAs Power HBTs with Enhanced Convergence Capabilities

2006 European Microwave Integrated Circuits Conference, 2006

A new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is proposed. This non-l... more A new model for GaInP/GaAs power heterojunction bipolar transistors (HBT) is proposed. This non-linear electrothermal and fully scalable model was designed with closed-form equations in order to reduce simulation times in complex circuits like High Power Amplifiers (HPA) and to have good convergence capabilities at high compression levels. This paper presents model topology and shows parameters extraction from pulsed I-V, pulsed [SI-parameters measurements. Simulations performed on a two-stage HPA with 20 HBTs devices have demonstrated the good convergence properties as well as a good correlation with measurements.

Research paper thumbnail of Model order reduction of linear and nonlinear 3D thermal finite-element description of microwave devices for circuit analysis

International Journal of RF and Microwave Computer-Aided Engineering, 2005

Electrothermal models of power devices are necessary for the accurate analysis of their performan... more Electrothermal models of power devices are necessary for the accurate analysis of their performances. For this reason, this article deals with a methodology to obtain an electrothermal model based on a reduced model of a 3D thermal finite-element (FE) description for its thermal part and on pulsed electrical measurements for its electrical part. The reduced thermal model is based on the Ritz vector approach, which ensures a steady-state solution in every case. An equivalent SPICE subcircuit implementation for circuit simulation is proposed and discussed. An extension of the method to a nonlinear reduced model based on the Kirchoff transformation is also proposed. The complete models have been successfully implemented in circuit simulators for several HBT or PHEMT device structures. Many results concerning devices and circuits are presented, including simulation of both the static and dynamic collector-current collapse in HBTs due to the thermal phenomenon. Moreover, the results in terms of the circuit for an X-band high-power amplifier are also presented. As for the nonlinear approach, results concerning an homogeneous structure is given.