Robert Mroczyński - Academia.edu (original) (raw)
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Papers by Robert Mroczyński
ECS Transactions, 2009
This work is devoted to the technology and characterization of silicon oxynitride layers (SiO x N... more This work is devoted to the technology and characterization of silicon oxynitride layers (SiO x N y ) formed by Plasma Enhanced Chemical Vapor Deposition (PECVD). In the course of this work thermal stability of deposited layers was also examined. Expected changes in structure, chemical composition and electro-physical properties of the obtained layers were investigated by means of spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and electrical characterization of manufactured test structures (metal-insulatorsemiconductor (MIS) capacitors and MISFETs). Selected process parameters were chosen to fabricate SiO x N y layers which were introduced into MIS devices with double gate dielectric stack (based of hafnium dioxide). Electrical characterization of such MIS structures with PECVD silicon oxynitride have shown a feasibility of application of obtained system in non-volatile semiconductor memory (NVSM) devices.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2009
In this paper, the authors present the new double gate dielectric structure for the nonvolatile s... more In this paper, the authors present the new double gate dielectric structure for the nonvolatile semiconductor memory (NVSM) devices which is based of hafnium dioxide (HfO2). The novelty of this structure relays on the introduction of ultrathin silicon oxynitride (SiOxNy) formed by plasma ...
ECS Transactions, 2009
This work is devoted to the technology and characterization of silicon oxynitride layers (SiO x N... more This work is devoted to the technology and characterization of silicon oxynitride layers (SiO x N y ) formed by Plasma Enhanced Chemical Vapor Deposition (PECVD). In the course of this work thermal stability of deposited layers was also examined. Expected changes in structure, chemical composition and electro-physical properties of the obtained layers were investigated by means of spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and electrical characterization of manufactured test structures (metal-insulatorsemiconductor (MIS) capacitors and MISFETs). Selected process parameters were chosen to fabricate SiO x N y layers which were introduced into MIS devices with double gate dielectric stack (based of hafnium dioxide). Electrical characterization of such MIS structures with PECVD silicon oxynitride have shown a feasibility of application of obtained system in non-volatile semiconductor memory (NVSM) devices.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2009
In this paper, the authors present the new double gate dielectric structure for the nonvolatile s... more In this paper, the authors present the new double gate dielectric structure for the nonvolatile semiconductor memory (NVSM) devices which is based of hafnium dioxide (HfO2). The novelty of this structure relays on the introduction of ultrathin silicon oxynitride (SiOxNy) formed by plasma ...