Rocky Koga - Academia.edu (original) (raw)

Papers by Rocky Koga

Research paper thumbnail of Current radiation issues for programmable elements and devices

IEEE Transactions on Nuclear Science, 1998

Research paper thumbnail of Observations of single event failure in power MOSFETs

Workshop Record. 1994 IEEE Radiation Effects Data Workshop

... threshold voltage VDS(th) for failure for a given ion (usually Ni/Fe or BrKr), VGS and temper... more ... threshold voltage VDS(th) for failure for a given ion (usually Ni/Fe or BrKr), VGS and temperature. ... presents threshold VDS for several groups of ions at a few selected gate source voltages VGS, following the second (recommended) approach. ...

Research paper thumbnail of SEE sensitivity trends in non-hardened high density SRAMs with sub-micron feature sizes

2003 IEEE Radiation Effects Data Workshop

We report on single event upsets (SEU) and single event latchup (SEL) sensitivities under irradia... more We report on single event upsets (SEU) and single event latchup (SEL) sensitivities under irradiation by protons and heavy ions for a variety of non-hardened high density static random access memories (SRAMs) with sub-micron feature sizes. The results are compared with previously measured sensitivities for similar devices with larger features. We discuss the sensitivity trends with temperature and examine other

Research paper thumbnail of 1 Laser-Induced and Heavy Ion-Induced Single Event Transient (SET) Sensitivity Measurements on LM139 Comparators

We have measured single event transients (SET) on a number of LM139 comparators with differing to... more We have measured single event transients (SET) on a number of LM139 comparators with differing topologies. We report both pulsed laser-induced and heavy ion-induced measurements. We discuss the effects of different device topologies on SET sensitivity. Our results agree qualitatively with SPICE model calculations of LM139s by Johnston, et al.

Research paper thumbnail of Permanent single event functional interrupts (SEFIs) in 128- and 256-megabit synchronous dynamic random access memories (SDRAMs)

2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588)

Permanent Single Event Functional Interrupts (SEFIs) have been observed in several high density S... more Permanent Single Event Functional Interrupts (SEFIs) have been observed in several high density Synchronous Dynamic Random Access Memories (SDRAMs). Affected devices often lose both Read and Write functions

Research paper thumbnail of Investigation of non-independent single event upsets in the TAOS GVSC static RAM

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference

... ancl Ben Wilson, James Marcelli, and Linden Laird Senior Members of the Technical Staff GTE G... more ... ancl Ben Wilson, James Marcelli, and Linden Laird Senior Members of the Technical Staff GTE Government Systems, Mountain View, California Abstrmt Operation of the two TAOS 13oneywell GVSC Flight Computers has been monitored over three years. ...

Research paper thumbnail of Topology-related upset mechanisms in design hardened storage cells

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

The SEU hardness of a new CMOS storage cell based on latch redundancy has been analyzed using a l... more The SEU hardness of a new CMOS storage cell based on latch redundancy has been analyzed using a laser beam simulation. We detected and investigated topology-dependent upset mechanisms due to charge collection at two sensitive nodes using a laser excitation between the nodes. Compact upset-immune device topologies are proposed, using spacing and isolation techniques for simultaneously sensitive node pairs, to

Research paper thumbnail of Single ion induced multiple-bit upset in IDT 256K SRAMs

RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3)

The occurrence of single ion induced multiple-bit upset in IDT71256 256K SRAMs was investigated u... more The occurrence of single ion induced multiple-bit upset in IDT71256 256K SRAMs was investigated using high energy heavy ions, with special attention to upsets affecting bits within the same logical memory word

Research paper thumbnail of Advantages of the LBL 88-Inch Cyclotron Ion Beam for SEP Studies

Research paper thumbnail of SEE Testing of the DDC BU-61583 Advanced Communication Engine

2007 IEEE Radiation Effects Data Workshop, 2007

ABSTRACT

Research paper thumbnail of Single Event Effects Tests on the Actel RTAX2000S FPGA

2009 IEEE Radiation Effects Data Workshop, 2009

... The die was mounted face up in the cavity (Fig. 1) and had less than about 10μm of metal over... more ... The die was mounted face up in the cavity (Fig. 1) and had less than about 10μm of metal overlayers. Manuscript received July 17, 2009. ... Single Event Effects Tests on the Actel RTAX2000S FPGA Jeffrey S. George, Rocky Koga, Member, IEEE , and Mark Zakrzewski T ...

Research paper thumbnail of Single-event upset rate estimates for a 16-K CMOS (complementary metal oxide semiconductor) SRAM (static random access memory). Technical report

A radiation-hardened 16K CMOS SRAM was developed for satellite and deep space applications. The R... more A radiation-hardened 16K CMOS SRAM was developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, and a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single-event cross section and effective funnel length were made using the Lawrence Berkeley Laboratory's 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the RAM cell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adam's 90% worst-case cosmic ray environment. This report is presented in the form of a worst tutorial review, summarizing the results of substantial research efforts within the single event community.

Research paper thumbnail of A compendium of recent optocoupler radiation test data

2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.00TH8527)

Research paper thumbnail of SEE sensitivities of selected advanced flash and first-in-first-out memories

2004 IEEE Radiation Effects Data Workshop (IEEE Cat. No.04TH8774)

Research paper thumbnail of Single event effects test results for the 80C186 and 80C286 microprocessors and the SMJ320C30 and SMJ320C40 digital signal processors

Research paper thumbnail of Proton-Induced Single Event Upsets in 90nm Technology High Performance SRAM Memories

Low energy Proton induced upsets in a Quad Data Rate 90nm technology radiation hard SRAM are anal... more Low energy Proton induced upsets in a Quad Data Rate 90nm technology radiation hard SRAM are analyzed and compared with published data for 65nm/90nm technologies. Only 100x increase in cross section is discovered compared to several orders of magnitude for others.

Research paper thumbnail of Device SEE susceptibility from heavy ions (1995-1996)

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference

Research paper thumbnail of Foreign comparative test of space qualified digital signal processors

Proceedings, IEEE Aerospace Conference

Research paper thumbnail of Comparative testing of ADSP-21020 digital signal processors from multiple vendors

2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588), 2001

... Paul Duggan, Steven Sampson, Richard Burnell, Rocky Koga, Paul Yu, Susan Crain, Steve McEndre... more ... Paul Duggan, Steven Sampson, Richard Burnell, Rocky Koga, Paul Yu, Susan Crain, Steve McEndree, Jake Tausch, Dave Sleeter, and Dave Alexander ... The Atmel and BAE Systems devices are also available in 256 pin, quad flat packs. ...

Research paper thumbnail of A Radiation Hardened High Voltage 16:1 Analog Multiplexer for Space Applications (NGCP3580)

2008 IEEE Radiation Effects Data Workshop, 2008

Many space systems require the multiplexing of high voltage analog signals around the spacecraft ... more Many space systems require the multiplexing of high voltage analog signals around the spacecraft to drive actuators and motors for telemetry control. While considerable resources have supported the radiation hardening of digital electronics, very little has been focused on this critical high voltage analog requirement. To address this issue, Northrop Grumman has developed a radiation hardened high voltage (+/-15 V)

Research paper thumbnail of Current radiation issues for programmable elements and devices

IEEE Transactions on Nuclear Science, 1998

Research paper thumbnail of Observations of single event failure in power MOSFETs

Workshop Record. 1994 IEEE Radiation Effects Data Workshop

... threshold voltage VDS(th) for failure for a given ion (usually Ni/Fe or BrKr), VGS and temper... more ... threshold voltage VDS(th) for failure for a given ion (usually Ni/Fe or BrKr), VGS and temperature. ... presents threshold VDS for several groups of ions at a few selected gate source voltages VGS, following the second (recommended) approach. ...

Research paper thumbnail of SEE sensitivity trends in non-hardened high density SRAMs with sub-micron feature sizes

2003 IEEE Radiation Effects Data Workshop

We report on single event upsets (SEU) and single event latchup (SEL) sensitivities under irradia... more We report on single event upsets (SEU) and single event latchup (SEL) sensitivities under irradiation by protons and heavy ions for a variety of non-hardened high density static random access memories (SRAMs) with sub-micron feature sizes. The results are compared with previously measured sensitivities for similar devices with larger features. We discuss the sensitivity trends with temperature and examine other

Research paper thumbnail of 1 Laser-Induced and Heavy Ion-Induced Single Event Transient (SET) Sensitivity Measurements on LM139 Comparators

We have measured single event transients (SET) on a number of LM139 comparators with differing to... more We have measured single event transients (SET) on a number of LM139 comparators with differing topologies. We report both pulsed laser-induced and heavy ion-induced measurements. We discuss the effects of different device topologies on SET sensitivity. Our results agree qualitatively with SPICE model calculations of LM139s by Johnston, et al.

Research paper thumbnail of Permanent single event functional interrupts (SEFIs) in 128- and 256-megabit synchronous dynamic random access memories (SDRAMs)

2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588)

Permanent Single Event Functional Interrupts (SEFIs) have been observed in several high density S... more Permanent Single Event Functional Interrupts (SEFIs) have been observed in several high density Synchronous Dynamic Random Access Memories (SDRAMs). Affected devices often lose both Read and Write functions

Research paper thumbnail of Investigation of non-independent single event upsets in the TAOS GVSC static RAM

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference

... ancl Ben Wilson, James Marcelli, and Linden Laird Senior Members of the Technical Staff GTE G... more ... ancl Ben Wilson, James Marcelli, and Linden Laird Senior Members of the Technical Staff GTE Government Systems, Mountain View, California Abstrmt Operation of the two TAOS 13oneywell GVSC Flight Computers has been monitored over three years. ...

Research paper thumbnail of Topology-related upset mechanisms in design hardened storage cells

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

The SEU hardness of a new CMOS storage cell based on latch redundancy has been analyzed using a l... more The SEU hardness of a new CMOS storage cell based on latch redundancy has been analyzed using a laser beam simulation. We detected and investigated topology-dependent upset mechanisms due to charge collection at two sensitive nodes using a laser excitation between the nodes. Compact upset-immune device topologies are proposed, using spacing and isolation techniques for simultaneously sensitive node pairs, to

Research paper thumbnail of Single ion induced multiple-bit upset in IDT 256K SRAMs

RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3)

The occurrence of single ion induced multiple-bit upset in IDT71256 256K SRAMs was investigated u... more The occurrence of single ion induced multiple-bit upset in IDT71256 256K SRAMs was investigated using high energy heavy ions, with special attention to upsets affecting bits within the same logical memory word

Research paper thumbnail of Advantages of the LBL 88-Inch Cyclotron Ion Beam for SEP Studies

Research paper thumbnail of SEE Testing of the DDC BU-61583 Advanced Communication Engine

2007 IEEE Radiation Effects Data Workshop, 2007

ABSTRACT

Research paper thumbnail of Single Event Effects Tests on the Actel RTAX2000S FPGA

2009 IEEE Radiation Effects Data Workshop, 2009

... The die was mounted face up in the cavity (Fig. 1) and had less than about 10μm of metal over... more ... The die was mounted face up in the cavity (Fig. 1) and had less than about 10μm of metal overlayers. Manuscript received July 17, 2009. ... Single Event Effects Tests on the Actel RTAX2000S FPGA Jeffrey S. George, Rocky Koga, Member, IEEE , and Mark Zakrzewski T ...

Research paper thumbnail of Single-event upset rate estimates for a 16-K CMOS (complementary metal oxide semiconductor) SRAM (static random access memory). Technical report

A radiation-hardened 16K CMOS SRAM was developed for satellite and deep space applications. The R... more A radiation-hardened 16K CMOS SRAM was developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, and a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single-event cross section and effective funnel length were made using the Lawrence Berkeley Laboratory's 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the RAM cell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adam's 90% worst-case cosmic ray environment. This report is presented in the form of a worst tutorial review, summarizing the results of substantial research efforts within the single event community.

Research paper thumbnail of A compendium of recent optocoupler radiation test data

2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.00TH8527)

Research paper thumbnail of SEE sensitivities of selected advanced flash and first-in-first-out memories

2004 IEEE Radiation Effects Data Workshop (IEEE Cat. No.04TH8774)

Research paper thumbnail of Single event effects test results for the 80C186 and 80C286 microprocessors and the SMJ320C30 and SMJ320C40 digital signal processors

Research paper thumbnail of Proton-Induced Single Event Upsets in 90nm Technology High Performance SRAM Memories

Low energy Proton induced upsets in a Quad Data Rate 90nm technology radiation hard SRAM are anal... more Low energy Proton induced upsets in a Quad Data Rate 90nm technology radiation hard SRAM are analyzed and compared with published data for 65nm/90nm technologies. Only 100x increase in cross section is discovered compared to several orders of magnitude for others.

Research paper thumbnail of Device SEE susceptibility from heavy ions (1995-1996)

1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference

Research paper thumbnail of Foreign comparative test of space qualified digital signal processors

Proceedings, IEEE Aerospace Conference

Research paper thumbnail of Comparative testing of ADSP-21020 digital signal processors from multiple vendors

2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588), 2001

... Paul Duggan, Steven Sampson, Richard Burnell, Rocky Koga, Paul Yu, Susan Crain, Steve McEndre... more ... Paul Duggan, Steven Sampson, Richard Burnell, Rocky Koga, Paul Yu, Susan Crain, Steve McEndree, Jake Tausch, Dave Sleeter, and Dave Alexander ... The Atmel and BAE Systems devices are also available in 256 pin, quad flat packs. ...

Research paper thumbnail of A Radiation Hardened High Voltage 16:1 Analog Multiplexer for Space Applications (NGCP3580)

2008 IEEE Radiation Effects Data Workshop, 2008

Many space systems require the multiplexing of high voltage analog signals around the spacecraft ... more Many space systems require the multiplexing of high voltage analog signals around the spacecraft to drive actuators and motors for telemetry control. While considerable resources have supported the radiation hardening of digital electronics, very little has been focused on this critical high voltage analog requirement. To address this issue, Northrop Grumman has developed a radiation hardened high voltage (+/-15 V)