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Rodrigo Martins

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Papers by Rodrigo Martins

Research paper thumbnail of Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide

Journal of Non-crystalline Solids, 2006

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Research paper thumbnail of Transport in high mobility amorphous wide band gap indium zinc oxide films

Physica Status Solidi (a), 2005

This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system pro... more This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system produced at room temperature by rf magnetron sputtering, under different oxygen partial pressures. The data show that the transport is not band tail limited, as it happens in conventional disordered semiconductors, but highly dependent on its ionicity, which explains the very high mobilities (≥60 cm2 V–1 s–1) achieved. The room temperature dependence of the Hall mobility on the carrier concentration presents a reverse behaviour than the one observed in conventional crystalline/polycrystalline semi-conductors, explained mainly by the presence of charged structural defects in excess of 4 × 1010 cm–2 that scatter the electrons that pass through them. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Research paper thumbnail of High-Performance Flexible Hybrid Field-Effect Transistors Based on Cellulose Fiber Paper

IEEE Electron Device Letters, 2008

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Research paper thumbnail of Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

Physica Status Solidi-rapid Research Letters, 2007

In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as activ... more In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Research paper thumbnail of Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide

Journal of Non-crystalline Solids, 2006

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Research paper thumbnail of Growth of ZnO:Ga thin films at room temperature on polymeric substrates: thickness dependence

Thin Solid Films, 2003

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Research paper thumbnail of Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications

Solar Energy Materials and Solar Cells, 2008

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Research paper thumbnail of Gallium-Indium-Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material

IEEE Transactions on Electron Devices, 2008

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Research paper thumbnail of High field-effect mobility zinc oxide thin film transistors produced at room temperature

Journal of Non-crystalline Solids, 2004

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Research paper thumbnail of Compensation by tumor suppressor genes during retinal development in mice and humans

BMC Biology, 2006

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Research paper thumbnail of Exercícios Propostos: 1-( CEFET-PR/04)2 Considere as seguintes afirmações tratadas na

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Research paper thumbnail of Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide

Journal of Non-crystalline Solids, 2006

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Transport in high mobility amorphous wide band gap indium zinc oxide films

Physica Status Solidi (a), 2005

This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system pro... more This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system produced at room temperature by rf magnetron sputtering, under different oxygen partial pressures. The data show that the transport is not band tail limited, as it happens in conventional disordered semiconductors, but highly dependent on its ionicity, which explains the very high mobilities (≥60 cm2 V–1 s–1) achieved. The room temperature dependence of the Hall mobility on the carrier concentration presents a reverse behaviour than the one observed in conventional crystalline/polycrystalline semi-conductors, explained mainly by the presence of charged structural defects in excess of 4 × 1010 cm–2 that scatter the electrons that pass through them. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Research paper thumbnail of High-Performance Flexible Hybrid Field-Effect Transistors Based on Cellulose Fiber Paper

IEEE Electron Device Letters, 2008

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Research paper thumbnail of Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

Physica Status Solidi-rapid Research Letters, 2007

In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as activ... more In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Research paper thumbnail of Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide

Journal of Non-crystalline Solids, 2006

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Research paper thumbnail of Growth of ZnO:Ga thin films at room temperature on polymeric substrates: thickness dependence

Thin Solid Films, 2003

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Research paper thumbnail of Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications

Solar Energy Materials and Solar Cells, 2008

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Research paper thumbnail of Gallium-Indium-Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material

IEEE Transactions on Electron Devices, 2008

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Research paper thumbnail of High field-effect mobility zinc oxide thin film transistors produced at room temperature

Journal of Non-crystalline Solids, 2004

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Research paper thumbnail of Compensation by tumor suppressor genes during retinal development in mice and humans

BMC Biology, 2006

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Research paper thumbnail of Exercícios Propostos: 1-( CEFET-PR/04)2 Considere as seguintes afirmações tratadas na

Bookmarks Related papers MentionsView impact

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