Rodrigo Martins - Academia.edu (original) (raw)
Uploads
Papers by Rodrigo Martins
Journal of Non-crystalline Solids, 2006
Bookmarks Related papers MentionsView impact
Physica Status Solidi (a), 2005
This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system pro... more This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system produced at room temperature by rf magnetron sputtering, under different oxygen partial pressures. The data show that the transport is not band tail limited, as it happens in conventional disordered semiconductors, but highly dependent on its ionicity, which explains the very high mobilities (≥60 cm2 V–1 s–1) achieved. The room temperature dependence of the Hall mobility on the carrier concentration presents a reverse behaviour than the one observed in conventional crystalline/polycrystalline semi-conductors, explained mainly by the presence of charged structural defects in excess of 4 × 1010 cm–2 that scatter the electrons that pass through them. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Bookmarks Related papers MentionsView impact
IEEE Electron Device Letters, 2008
Bookmarks Related papers MentionsView impact
Physica Status Solidi-rapid Research Letters, 2007
In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as activ... more In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Bookmarks Related papers MentionsView impact
Journal of Non-crystalline Solids, 2006
Bookmarks Related papers MentionsView impact
Thin Solid Films, 2003
Bookmarks Related papers MentionsView impact
Solar Energy Materials and Solar Cells, 2008
Bookmarks Related papers MentionsView impact
IEEE Transactions on Electron Devices, 2008
Bookmarks Related papers MentionsView impact
Journal of Non-crystalline Solids, 2004
Bookmarks Related papers MentionsView impact
BMC Biology, 2006
Bookmarks Related papers MentionsView impact
Bookmarks Related papers MentionsView impact
Journal of Non-crystalline Solids, 2006
Bookmarks Related papers MentionsView impact
Physica Status Solidi (a), 2005
This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system pro... more This paper discusses the electron transport in the n-type amorphous indium–zinc–oxygen system produced at room temperature by rf magnetron sputtering, under different oxygen partial pressures. The data show that the transport is not band tail limited, as it happens in conventional disordered semiconductors, but highly dependent on its ionicity, which explains the very high mobilities (≥60 cm2 V–1 s–1) achieved. The room temperature dependence of the Hall mobility on the carrier concentration presents a reverse behaviour than the one observed in conventional crystalline/polycrystalline semi-conductors, explained mainly by the presence of charged structural defects in excess of 4 × 1010 cm–2 that scatter the electrons that pass through them. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Bookmarks Related papers MentionsView impact
IEEE Electron Device Letters, 2008
Bookmarks Related papers MentionsView impact
Physica Status Solidi-rapid Research Letters, 2007
In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as activ... more In this paper we demonstrate the use of amorphous binary In2O3–ZnO oxides simultaneously as active channel layer and as source/drain regions in transparent thin film transistor (TTFT), processed at room temperature by rf sputtering. The TTFTs operate in the enhancement mode and their performances are thickness dependent. The best TTFTs exhibit saturation mobilities higher than 102 cm2/Vs, threshold voltages lower than 6 V, gate voltage swing of 0.8 V/dec and an on/off current ratio of 107. This mobility is at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and comparable to or even better than other polycrystalline semiconductors. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Bookmarks Related papers MentionsView impact
Journal of Non-crystalline Solids, 2006
Bookmarks Related papers MentionsView impact
Thin Solid Films, 2003
Bookmarks Related papers MentionsView impact
Solar Energy Materials and Solar Cells, 2008
Bookmarks Related papers MentionsView impact
IEEE Transactions on Electron Devices, 2008
Bookmarks Related papers MentionsView impact
Journal of Non-crystalline Solids, 2004
Bookmarks Related papers MentionsView impact
BMC Biology, 2006
Bookmarks Related papers MentionsView impact
Bookmarks Related papers MentionsView impact