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The absolute efficiency performance of a High Purity Germanium (HPGe) gamma-ray detector at low e... more The absolute efficiency performance of a High Purity Germanium (HPGe) gamma-ray detector at low energies (aside from geometric considerations) is dominated by attenuation outside the active volume of the germanium crystal. For applications where neutron damage is not a concern, p-type detectors have several attractive features including energy resolution performance. However, the outer contact usually takes the form of a thick n+ contact. Owing to the otherwise beneficial high attenuation coefficient of germanium, little to no transmission of photons in the energy range between 3 and 50 keV is apparent. A new Stable Thin Front Contact (STFC) has been developed by ORTEC for p-type coaxial and semi-planar HPGe detectors. The contact is both thin and highly stable. It improves efficiency at low energies and allows detection down to 3 keV with p-type detectors. Another principal advantage is no dead-layer growth at room temperature (if detector is stored ”warm” for a prolonged period of...
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A new understanding of the damage formation mechanisms in Si is developed and investigated over a... more A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over its complimentary defect (i.e., a vacancy). Mechanisms for producing such excesses by implantation will be discussed. The basis of this model specifies that accumulation of stable lattice damage during implantation depends upon the excess defects and not the total number of defects. The excess defect model is validated by fundamental damage studies involving ion implantation over a range of conditions. Confirmation of the model is provided by comparing damage profiles after implantation ...
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The absolute efficiency performance of a High Purity Germanium (HPGe) gamma-ray detector at low e... more The absolute efficiency performance of a High Purity Germanium (HPGe) gamma-ray detector at low energies (aside from geometric considerations) is dominated by attenuation outside the active volume of the germanium crystal. For applications where neutron damage is not a concern, p-type detectors have several attractive features including energy resolution performance. However, the outer contact usually takes the form of a thick n+ contact. Owing to the otherwise beneficial high attenuation coefficient of germanium, little to no transmission of photons in the energy range between 3 and 50 keV is apparent. A new Stable Thin Front Contact (STFC) has been developed by ORTEC for p-type coaxial and semi-planar HPGe detectors. The contact is both thin and highly stable. It improves efficiency at low energies and allows detection down to 3 keV with p-type detectors. Another principal advantage is no dead-layer growth at room temperature (if detector is stored ”warm” for a prolonged period of...
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A new understanding of the damage formation mechanisms in Si is developed and investigated over a... more A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditions. In particular the concept of defect "excesses" will be discussed. An excess exists in the lattice when there is a local surplus of one particular type of defect, such as an interstitial, over its complimentary defect (i.e., a vacancy). Mechanisms for producing such excesses by implantation will be discussed. The basis of this model specifies that accumulation of stable lattice damage during implantation depends upon the excess defects and not the total number of defects. The excess defect model is validated by fundamental damage studies involving ion implantation over a range of conditions. Confirmation of the model is provided by comparing damage profiles after implantation ...
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