Sergey Karpov - Academia.edu (original) (raw)

Sergey Karpov

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Papers by Sergey Karpov

MRS Internet Journal of Nitride Semiconductor Research

A database for thermodynamic properties of group-III nitrides and relevant species involved into ... more A database for thermodynamic properties of group-III nitrides and relevant species involved into growth of these materials is developed in this paper. Standard formation enthalpies of materials and coefficients of polynomial approximations of the reduced Gibbs free energies are collected in the tables. They allow one to determine the Gibbs free energy, enthalpy, entropy and specific heat of a species as a function of temperature. The database covers solid and gaseous group-III nitrides, elemental species, gaseous metal-organic compounds, chlorides and hydrides of group-III elements, nitrogen containing precursors and organic byproducts of various chemical reactions proceeding during growth processes. Thermodynamic properties of adducts which can be formed in the vapor phase while mixing ammonia and metal-organic compounds are presented in the database as well. Much of the data given in this paper is presented for the first time. All the data are checked for self-consistency and ther...

Materials Science Forum

Quasi-thermodynamic model of SiC doping with Al in CVD from C3H8, SiH4, and Al (CH3)3 on the Si-f... more Quasi-thermodynamic model of SiC doping with Al in CVD from C3H8, SiH4, and Al (CH3)3 on the Si-face is developed. The model is validated by quantitative agreement of calculated and experimental data on the Al concentration in SiC as a function of temperature, pressure, SiC growth rate, and TMAl flow rate. The model is shown to be consistent with the site competition mechanism of Al incorporation into SiC.

2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, 2015

St. Petersburg State Polytechnical University Journal. Physics and Mathematics, 2015

St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2015

MRS Proceedings, 2000

We report on study of a growth system upscaling from 2” to 4” using numerical modeling. The model... more We report on study of a growth system upscaling from 2” to 4” using numerical modeling. The model applied involves heat and mass transfer computations combined with a self-consistent analysis of deposit formation on the reactor walls. General trends in SiC bulk crystal growth originated from upscaling are discussed in detail.

physica status solidi (b), 2012

Materials Science Forum, 2003

We report on new results in AlN bulk crystal growth by sublimati on sandwich method. The single c... more We report on new results in AlN bulk crystal growth by sublimati on sandwich method. The single crystals of 12 mm in diameter and up to 5 mm long have bee n o tained with the growth rate up to 0.5 mm/h. Growth was carried out in a nitrogen environment at temperatures of 19002300°C and atmospheric pressure. 4Hand 6H-SiC both of (0001)C and (0001)Si orienta ti ns were used as seeds. Growth kinetics and operating conditions favorable for impr oving the long-term process stability and crystal quality are discussed on the basis of both experimental and theoretical studies. The grown AlN crystals are characterized by X-ray diffraction and R man scattering.

Materials Science Forum, 2003

MRS Proceedings, 2002

ABSTRACTRecently, an advanced technique for growing free-spreading SiC bulk crystals by sublimati... more ABSTRACTRecently, an advanced technique for growing free-spreading SiC bulk crystals by sublimation has been demonstrated. This method was used to grow 6H- and 4H-SiC boules free of polycrystalline deposits on the crystal periphery, up to 35 mm in diameter with the micropipe density less than 20 cm-2 and the dislocation density about 102-103 cm-2. In this paper, we report on the numerical modeling of free-spreading crystal growth. We consider the global heat transfer in an inductively heated growth system, species transport in the growth cell and in the powder charge, and thermoelastic stress, focusing on the crystallization front dynamics, poly-SiC deposition, and powder source evolution. Special attention was given to the validation of the simulations. The computed thermal field and evolution of the powder and crystal shape were found to agree qualitatively with observations.