Steve McClure - Academia.edu (original) (raw)

Papers by Steve McClure

1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385)

ABSTRACT The effects of burn-in on the sensitivity to total dose radiation of discrete transistor... more ABSTRACT The effects of burn-in on the sensitivity to total dose radiation of discrete transistors and linear integrated circuits (ICs) of several types from different manufacturers are examined. Sig-nificant differences in the behavior of different devices are noted. The ...

IEEE Transactions on Nuclear Science, 1998

IEEE Transactions on Nuclear Science, 1998

Abstract Ionization-induced degradation of the 29372 low-dropout voltage regulator is most severe... more Abstract Ionization-induced degradation of the 29372 low-dropout voltage regulator is most severe at low-dose-rate (-10 mrad(Si02)/s) and zero load current. The most sensitive parameter is the maximum output drive current, which is a function of the gain of the large lateral pnp ...

IEEE Transactions on Nuclear Science, 2005

2008 European Conference on Radiation and Its Effects on Components and Systems, 2008

IEEE Transactions on Nuclear Science, 2010

A unique testing approach based on error-pattern identification with a graphical mapping and colo... more A unique testing approach based on error-pattern identification with a graphical mapping and color-coding of the full SDRAM memory during single-event characterization is proposed. Results about unique SEFI modes and the role of temperature are discussed.

IEEE Transactions on Nuclear Science, 2007

Bipolar junction test structures packaged in hermetically sealed packages with excess molecular h... more Bipolar junction test structures packaged in hermetically sealed packages with excess molecular hydrogen (H 2) showed enhanced degradation after radiation exposure. Using chemical kinetics, we propose a model that quantitatively establishes the relationship between excess H 2 and radiation-induced interface trap formation. Using environments with different molecular hydrogen concentrations, radiation experiments were performed and the experimental data showed excellent agreement with the proposed model. The results, both experimentally and theoretically, showed increased radiation induced degradation with H 2 concentration, and device degradation saturate at both high and low ends of H 2 concentrations.

The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subj... more The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions.

The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subj... more The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions.

Over the last 50 years, the effects of cumulative radiation damage in microelectronics, and now n... more Over the last 50 years, the effects of cumulative radiation damage in microelectronics, and now nanoelectronics, have continually presented a design and assurance challenge to space flight missions. Feature sizes, that is, the size of the unit structure in microelectronics, has continually decreased, which has presented an added complexity to testing and assuring microelectronic devices. This paper outlines the paradigm shifts of total ionizing dose (TID) and displacement damage (DD) effects as device sizes have reduced and highlights some of the strategies developed to insert apply microelectronics into space. The current trends of the technology are analyzed in context of future JPL and NASA missions.

We assess the viability of a state-of-the-art 100G/200G commercial optical coherent DSP ASIC (16 ... more We assess the viability of a state-of-the-art 100G/200G commercial optical coherent DSP ASIC (16 nm FinFET CMOS technology) for space applications through heavy ion testing to (1) screen for destructive SELs and (2) observe for nondestructive heavy ion SEEs on the ASIC. The ASIC was exposed to heavy ion radiation while operating both optically noise-loaded uplink and downlink to an optical “ground” modem. There were no destructive SEEs, such as SELs, observed from the heavy ion radiation test campaign.

a testing approach based on error-pattern identification with a graphical mapping and color-codin... more a testing approach based on error-pattern identification with a graphical mapping and color-coding of the full SDRAM during single-event characterization is proposed. Results about unique SEFI modes and the role of temperature are discussed.

Recent Enhanced Low Dose Rate Sensitivity (ELDRS) investigations carried out by RLP Research, Ari... more Recent Enhanced Low Dose Rate Sensitivity (ELDRS) investigations carried out by RLP Research, Arizona State University (ASU) and Jet Propulsion Laboratory (JPL) have shown significant differences in the degradation of bipolar micro-circuits with total dose in the presence of molecular hydrogen (H2) in packages. This has a significant impact on radiation hardness assurance and opens up opportunities to improve device performance. The general objectives of this program are to: 1. Determine the extent to which hydrogen contamination affects the total dose and dose rate response of linear bipolar circuits; 2. Develop a model that will enable the prediction of high dose rate (HDR) and low dose rate (LDR) response asymptotes and transition dose rates as a function of total dose, temperature, pressurized hydrogen, defect precursors, and other process dependent variables; 3. Explore the possibility of an accelerated hardness assurance method and possible hardening approaches; and 4. Extend ...

IEEE Transactions on Nuclear Science

A total dose testing methodology for qualifying bipolar analog circuits for the Europa Clipper (E... more A total dose testing methodology for qualifying bipolar analog circuits for the Europa Clipper (EC) mission is presented. The method leverages the unique mission dose rate profile to bound device performance and reduces qualification test time from 1 year to 80 days. In addition, a new testing approach that simulates the mission dose profile revealed interesting information about the nature of radiation-induced defects in these “rad-hard” bipolar process lines. Results show that unlike bipolar parts from older generations (very sensitive to enhanced low dose rate sensitivity), these new processes seem to be dominated by oxide traps (<inline-formula> <tex-math notation="LaTeX">$\text{N}_{\mathrm {ot}}$ </tex-math></inline-formula>) and not interface traps (<inline-formula> <tex-math notation="LaTeX">$\text{N}_{\mathrm {it}}$ </tex-math></inline-formula>). This appears to be consistent with the mitigation used by vendors for reducing hydrogen (H₂) contamination in their processing steps.

1998 IEEE Radiation Effects Data Workshop. NSREC 98. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.98TH8385)

ABSTRACT The effects of burn-in on the sensitivity to total dose radiation of discrete transistor... more ABSTRACT The effects of burn-in on the sensitivity to total dose radiation of discrete transistors and linear integrated circuits (ICs) of several types from different manufacturers are examined. Sig-nificant differences in the behavior of different devices are noted. The ...

IEEE Transactions on Nuclear Science, 1998

IEEE Transactions on Nuclear Science, 1998

Abstract Ionization-induced degradation of the 29372 low-dropout voltage regulator is most severe... more Abstract Ionization-induced degradation of the 29372 low-dropout voltage regulator is most severe at low-dose-rate (-10 mrad(Si02)/s) and zero load current. The most sensitive parameter is the maximum output drive current, which is a function of the gain of the large lateral pnp ...

IEEE Transactions on Nuclear Science, 2005

2008 European Conference on Radiation and Its Effects on Components and Systems, 2008

IEEE Transactions on Nuclear Science, 2010

A unique testing approach based on error-pattern identification with a graphical mapping and colo... more A unique testing approach based on error-pattern identification with a graphical mapping and color-coding of the full SDRAM memory during single-event characterization is proposed. Results about unique SEFI modes and the role of temperature are discussed.

IEEE Transactions on Nuclear Science, 2007

Bipolar junction test structures packaged in hermetically sealed packages with excess molecular h... more Bipolar junction test structures packaged in hermetically sealed packages with excess molecular hydrogen (H 2) showed enhanced degradation after radiation exposure. Using chemical kinetics, we propose a model that quantitatively establishes the relationship between excess H 2 and radiation-induced interface trap formation. Using environments with different molecular hydrogen concentrations, radiation experiments were performed and the experimental data showed excellent agreement with the proposed model. The results, both experimentally and theoretically, showed increased radiation induced degradation with H 2 concentration, and device degradation saturate at both high and low ends of H 2 concentrations.

The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subj... more The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions.

The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subj... more The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions.

Over the last 50 years, the effects of cumulative radiation damage in microelectronics, and now n... more Over the last 50 years, the effects of cumulative radiation damage in microelectronics, and now nanoelectronics, have continually presented a design and assurance challenge to space flight missions. Feature sizes, that is, the size of the unit structure in microelectronics, has continually decreased, which has presented an added complexity to testing and assuring microelectronic devices. This paper outlines the paradigm shifts of total ionizing dose (TID) and displacement damage (DD) effects as device sizes have reduced and highlights some of the strategies developed to insert apply microelectronics into space. The current trends of the technology are analyzed in context of future JPL and NASA missions.

We assess the viability of a state-of-the-art 100G/200G commercial optical coherent DSP ASIC (16 ... more We assess the viability of a state-of-the-art 100G/200G commercial optical coherent DSP ASIC (16 nm FinFET CMOS technology) for space applications through heavy ion testing to (1) screen for destructive SELs and (2) observe for nondestructive heavy ion SEEs on the ASIC. The ASIC was exposed to heavy ion radiation while operating both optically noise-loaded uplink and downlink to an optical “ground” modem. There were no destructive SEEs, such as SELs, observed from the heavy ion radiation test campaign.

a testing approach based on error-pattern identification with a graphical mapping and color-codin... more a testing approach based on error-pattern identification with a graphical mapping and color-coding of the full SDRAM during single-event characterization is proposed. Results about unique SEFI modes and the role of temperature are discussed.

Recent Enhanced Low Dose Rate Sensitivity (ELDRS) investigations carried out by RLP Research, Ari... more Recent Enhanced Low Dose Rate Sensitivity (ELDRS) investigations carried out by RLP Research, Arizona State University (ASU) and Jet Propulsion Laboratory (JPL) have shown significant differences in the degradation of bipolar micro-circuits with total dose in the presence of molecular hydrogen (H2) in packages. This has a significant impact on radiation hardness assurance and opens up opportunities to improve device performance. The general objectives of this program are to: 1. Determine the extent to which hydrogen contamination affects the total dose and dose rate response of linear bipolar circuits; 2. Develop a model that will enable the prediction of high dose rate (HDR) and low dose rate (LDR) response asymptotes and transition dose rates as a function of total dose, temperature, pressurized hydrogen, defect precursors, and other process dependent variables; 3. Explore the possibility of an accelerated hardness assurance method and possible hardening approaches; and 4. Extend ...

IEEE Transactions on Nuclear Science

A total dose testing methodology for qualifying bipolar analog circuits for the Europa Clipper (E... more A total dose testing methodology for qualifying bipolar analog circuits for the Europa Clipper (EC) mission is presented. The method leverages the unique mission dose rate profile to bound device performance and reduces qualification test time from 1 year to 80 days. In addition, a new testing approach that simulates the mission dose profile revealed interesting information about the nature of radiation-induced defects in these “rad-hard” bipolar process lines. Results show that unlike bipolar parts from older generations (very sensitive to enhanced low dose rate sensitivity), these new processes seem to be dominated by oxide traps (<inline-formula> <tex-math notation="LaTeX">$\text{N}_{\mathrm {ot}}$ </tex-math></inline-formula>) and not interface traps (<inline-formula> <tex-math notation="LaTeX">$\text{N}_{\mathrm {it}}$ </tex-math></inline-formula>). This appears to be consistent with the mitigation used by vendors for reducing hydrogen (H₂) contamination in their processing steps.