Steven Brueck - Academia.edu (original) (raw)

Papers by Steven Brueck

Research paper thumbnail of Cubic Gallium Nitride on Micropatterned Si (001) for Longer Wavelength LEDs

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Research paper thumbnail of Backside illuminated infrared detectors with plasmonic resonators

Proceedings of SPIE - The International Society for Optical Engineering, 2010

Next generation infrared photodetector technology will require focal plane array (FPA) systems th... more Next generation infrared photodetector technology will require focal plane array (FPA) systems that have multi-spectral imaging capabilities. One proposed approach to realizing these multicolor devices is to use plasmonic resonators. However, device development and characterization are commonly addressed with large front side illuminated single pixel detectors on a supporting epitaxial substrate. The focal plane arrays on the other hand are

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Research paper thumbnail of Plasmonic-coupled quantum dot photodetectors for mid-infrared photonics

Optics Express, 2021

A plasmonic-coupled, InAs-based quantum dot photodetector fabricated for mid-wave infrared photon... more A plasmonic-coupled, InAs-based quantum dot photodetector fabricated for mid-wave infrared photonics is reported. The detector is designed to provide a broadband absorption [full width at half maximum (FWHM) ≳ 2 µm] peaked at ∼5.5 µm, corresponding to transitions from the ground state of the quantum dot to the quasi-continuum resonance state above the quantum well. From the coupling of this transition to the surface plasma wave (SPW) excited by an Au film atop the detector, fabricated with a 1.5 µm-period, 2-dimensional array of square holes, a narrowband SPW enhancement peaked at 4.8 µm with an FWHM less than 0.5 µm is achieved. At ∼90 K, a peak responsivity enhanced ∼5× by the plasmonic coupling is observed. Simulation reveals that this enhancement corresponds to collecting ∼6% of the incident light; ∼40% of the total absorption by the SPW excitation at the peak wavelength.

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Research paper thumbnail of Plasmas and Controlled Nuclear Fusion

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Research paper thumbnail of OCIS codes: (050.1220) Apertures; (050.2770) Gratings; (190.2620) Frequency Conversion

Second harmonic generation from patterned

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Research paper thumbnail of Quantum efficiency of plasmonic-coupled quantum dot infrared photodetectors for single- color detection: the upper limit of plasmonic enhancement

Optics Express, 2020

We report a measurement of the quantum efficiency for a surface plasma wave (SPW)-coupled InAs/In... more We report a measurement of the quantum efficiency for a surface plasma wave (SPW)-coupled InAs/In0.15Ga0.85As/GaAs dots-in-a-well (Dwell) quantum dot infrared photodetector (QDIP) having a single-color response at ∼10 µm. A gold film perforated with a square array of complex, non-circular apertures is employed to manipulate the near-fields of the fundamental SPW. The quantum efficiency is quantitatively divided into absorption efficiency strongly enhanced by the SPW, and collection efficiency mostly independent of it. In the absorption efficiency, the evanescent near-fields of the fundamental SPW critically enhances QDIP performance but undergoes the attenuation by the absorption in the Dwell that ultimately limits the quantum efficiency. For the highest quantum efficiency available with plasmonic coupling, an optimal overlap between Dwell and SPW near-fields is required. Based on experiment and simulation, the upper limit of the plasmonic enhancement in quantum efficiency for the p...

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Research paper thumbnail of Top-down, in-plane GaAs nanowire MOSFETs on an Al2O3buffer with a trigate oxide from focused ion-beam milling and chemical oxidation

Nanotechnology, 2016

The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect... more The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a trigate oxide implemented by liquid-phase chemical-enhanced oxidation (LPCEO) is reported. A 2 μm long channel having an effective cross section ∼70 × 220 nm(2) is directly fabricated into an epitaxial n (+)-GaAs layer. This in-plane NW structure is achieved by focused ion beam (FIB) milling and hydrolyzation oxidation resulting in electronic isolation from the substrate through a semiconductor-on-insulator structure with an n (+)-GaAs/Al2O3 layer stack. The channel is epitaxially connected to the μm-scale source and drain within a single layer for a planar MOSFET to avoid any issues of ohmic contact and LPCEO to the NW. To fabricate a MOSFET, the top and the two sidewalls of the in-plane NW are oxidized by LPCEO to relieve the surface damage from FIB as well as to transform these surfaces to a ∼15 nm thick gate oxide. This trigate device has threshold voltage ∼0.14 V and peak transconductance ∼35 μS μm(-1) with a subthreshold swing ∼150 mV/decade and on/off ratio of drain current ∼10(3), comparable to the performance of bottom-up NW devices.

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Research paper thumbnail of A novel smart lighting clinical testbed

Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Annual Conference, Jul 1, 2017

A real-time, feedback-capable, variable spectrum lighting system was recently installed at the Un... more A real-time, feedback-capable, variable spectrum lighting system was recently installed at the University of New Mexico Hospital to facilitate biomedical research on the health impacts of lighting. The system consists of variable spectrum troffers, color sensors, occupancy sensors, and computing and communication infrastructure, and is the only such clinical facility in the US. The clinical environment posed special challenges for installation as well as for ongoing maintenance and operations. Pilot studies are currently underway to evaluate the effectiveness of the system to regulate circadian phase in subjects with delayed sleep-wake phase disorder.

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Research paper thumbnail of Oscillatory penetration of near-fields in plasmonic excitation at metal-dielectric interfaces

Scientific reports, Jan 19, 2016

The electric field immediately below an illuminated metal-film that is perforated with a hole arr... more The electric field immediately below an illuminated metal-film that is perforated with a hole array on a dielectric consists of direct transmission and scattering of the incident light through the holes and evanescent near-field from plasmonic excitations. Depending on the size and shape of the hole apertures, it exhibits an oscillatory decay in the propagation direction. This unusual field penetration is explained by the interference between these contributions, and is experimentally confirmed through an aperture which is engineered with four arms stretched out from a simple circle to manipulate a specific plasmonic excitation available in the metal film. A numerical simulation quantitatively supports the experiment. This fundamental characteristic will impact plasmonics with the near-fields designed by aperture engineering for practical applications.

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Research paper thumbnail of A novel blue-enhanced photodetector using honeycomb structure

2015 IEEE SENSORS, 2015

In this paper, we present a honeycomb structure to maximize the edge-length in the detector and t... more In this paper, we present a honeycomb structure to maximize the edge-length in the detector and therefore enhance the detector responsivity in the blue region of the spectrum. A layout of a prototype honeycomb detector was designed and fabricated on a silicon wafer using a standard CMOS process. Based on our measured spectral response, the honeycomb structure improves the photocurrent in blue by about 60%. Moreover, the honeycomb detector demonstrates 20% less dark current than in conventional detector. Simulation results using MEDICI confirm the measured data.

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Research paper thumbnail of CMOS-compatible plenoptic detector for LED lighting applications

Optics express, Jan 7, 2015

LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, o... more LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.

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Research paper thumbnail of Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate

Proceedings of SPIE - The International Society for Optical Engineering, 2009

ABSTRACT InAs quantum dots embedded in InGaAs quantum well (DWELL) structures grown by metal-orga... more ABSTRACT InAs quantum dots embedded in InGaAs quantum well (DWELL) structures grown by metal-organic chemical-vapor deposition on nano-patterned GaAs pyramids and planar GaAs (001) substrate are comparatively investigated. Photoluminescence (PL), PL excitation, and time-resolved PL measurements demonstrate that the DWELL grown on the GaAs pyramids has a broad QW PL band (FWHM ~ 90 meV) and a better QD emission efficiency than the DWELL structure grown on the planar GaAs (001) substrate. These properties are attributed to the InGaAs QW with distributed thickness profile on the faceted GaAs pyramid, which introduces tapered energy band structure and assists the carrier capture into the QDs. This research provides useful data for further improving the performance of DWELL structures for device applications.

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Research paper thumbnail of Study of barrier coats for application in immersion 193-nm lithography

SPIE Proceedings, 2005

We will describe our barrier coat approach for use in immersion 193 nm lithography. These barrier... more We will describe our barrier coat approach for use in immersion 193 nm lithography. These barrier coats may act as either simple barriers providing protection against loss of resist components into water or in the case of one type of these formulations which have a refractive index at ...

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Research paper thumbnail of Advanced Optical Negative Index Materials

Frontiers in Optics, 2006

ABSTRACT

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Research paper thumbnail of LASERS, OPTICS, AND OPTOELECTRONICS 071101 Efficient single-photon frequency upconversion at 1.06 m with ultralow background counts (3 pages)

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Research paper thumbnail of Subpicosecond Optical Switching with a Negative Index Metamaterial

Nano Letters, 2009

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Research paper thumbnail of Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

Applied Physics Letters, 2013

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard elec... more GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting {111} planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100 μA is found fixed at 487 nm (peak), 516 nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

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Research paper thumbnail of Design of Chirped Gratings Using Interferometric Lithography

IEEE Photonics Journal, 2018

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Research paper thumbnail of Developing Pulsed Fiber Lasers

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Research paper thumbnail of Measurement of the Linewidth Enhancement Factor at High Excitation Levels

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Research paper thumbnail of Cubic Gallium Nitride on Micropatterned Si (001) for Longer Wavelength LEDs

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Backside illuminated infrared detectors with plasmonic resonators

Proceedings of SPIE - The International Society for Optical Engineering, 2010

Next generation infrared photodetector technology will require focal plane array (FPA) systems th... more Next generation infrared photodetector technology will require focal plane array (FPA) systems that have multi-spectral imaging capabilities. One proposed approach to realizing these multicolor devices is to use plasmonic resonators. However, device development and characterization are commonly addressed with large front side illuminated single pixel detectors on a supporting epitaxial substrate. The focal plane arrays on the other hand are

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Plasmonic-coupled quantum dot photodetectors for mid-infrared photonics

Optics Express, 2021

A plasmonic-coupled, InAs-based quantum dot photodetector fabricated for mid-wave infrared photon... more A plasmonic-coupled, InAs-based quantum dot photodetector fabricated for mid-wave infrared photonics is reported. The detector is designed to provide a broadband absorption [full width at half maximum (FWHM) ≳ 2 µm] peaked at ∼5.5 µm, corresponding to transitions from the ground state of the quantum dot to the quasi-continuum resonance state above the quantum well. From the coupling of this transition to the surface plasma wave (SPW) excited by an Au film atop the detector, fabricated with a 1.5 µm-period, 2-dimensional array of square holes, a narrowband SPW enhancement peaked at 4.8 µm with an FWHM less than 0.5 µm is achieved. At ∼90 K, a peak responsivity enhanced ∼5× by the plasmonic coupling is observed. Simulation reveals that this enhancement corresponds to collecting ∼6% of the incident light; ∼40% of the total absorption by the SPW excitation at the peak wavelength.

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Research paper thumbnail of Plasmas and Controlled Nuclear Fusion

Bookmarks Related papers MentionsView impact

Research paper thumbnail of OCIS codes: (050.1220) Apertures; (050.2770) Gratings; (190.2620) Frequency Conversion

Second harmonic generation from patterned

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Quantum efficiency of plasmonic-coupled quantum dot infrared photodetectors for single- color detection: the upper limit of plasmonic enhancement

Optics Express, 2020

We report a measurement of the quantum efficiency for a surface plasma wave (SPW)-coupled InAs/In... more We report a measurement of the quantum efficiency for a surface plasma wave (SPW)-coupled InAs/In0.15Ga0.85As/GaAs dots-in-a-well (Dwell) quantum dot infrared photodetector (QDIP) having a single-color response at ∼10 µm. A gold film perforated with a square array of complex, non-circular apertures is employed to manipulate the near-fields of the fundamental SPW. The quantum efficiency is quantitatively divided into absorption efficiency strongly enhanced by the SPW, and collection efficiency mostly independent of it. In the absorption efficiency, the evanescent near-fields of the fundamental SPW critically enhances QDIP performance but undergoes the attenuation by the absorption in the Dwell that ultimately limits the quantum efficiency. For the highest quantum efficiency available with plasmonic coupling, an optimal overlap between Dwell and SPW near-fields is required. Based on experiment and simulation, the upper limit of the plasmonic enhancement in quantum efficiency for the p...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Top-down, in-plane GaAs nanowire MOSFETs on an Al2O3buffer with a trigate oxide from focused ion-beam milling and chemical oxidation

Nanotechnology, 2016

The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect... more The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a trigate oxide implemented by liquid-phase chemical-enhanced oxidation (LPCEO) is reported. A 2 μm long channel having an effective cross section ∼70 × 220 nm(2) is directly fabricated into an epitaxial n (+)-GaAs layer. This in-plane NW structure is achieved by focused ion beam (FIB) milling and hydrolyzation oxidation resulting in electronic isolation from the substrate through a semiconductor-on-insulator structure with an n (+)-GaAs/Al2O3 layer stack. The channel is epitaxially connected to the μm-scale source and drain within a single layer for a planar MOSFET to avoid any issues of ohmic contact and LPCEO to the NW. To fabricate a MOSFET, the top and the two sidewalls of the in-plane NW are oxidized by LPCEO to relieve the surface damage from FIB as well as to transform these surfaces to a ∼15 nm thick gate oxide. This trigate device has threshold voltage ∼0.14 V and peak transconductance ∼35 μS μm(-1) with a subthreshold swing ∼150 mV/decade and on/off ratio of drain current ∼10(3), comparable to the performance of bottom-up NW devices.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of A novel smart lighting clinical testbed

Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Annual Conference, Jul 1, 2017

A real-time, feedback-capable, variable spectrum lighting system was recently installed at the Un... more A real-time, feedback-capable, variable spectrum lighting system was recently installed at the University of New Mexico Hospital to facilitate biomedical research on the health impacts of lighting. The system consists of variable spectrum troffers, color sensors, occupancy sensors, and computing and communication infrastructure, and is the only such clinical facility in the US. The clinical environment posed special challenges for installation as well as for ongoing maintenance and operations. Pilot studies are currently underway to evaluate the effectiveness of the system to regulate circadian phase in subjects with delayed sleep-wake phase disorder.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Oscillatory penetration of near-fields in plasmonic excitation at metal-dielectric interfaces

Scientific reports, Jan 19, 2016

The electric field immediately below an illuminated metal-film that is perforated with a hole arr... more The electric field immediately below an illuminated metal-film that is perforated with a hole array on a dielectric consists of direct transmission and scattering of the incident light through the holes and evanescent near-field from plasmonic excitations. Depending on the size and shape of the hole apertures, it exhibits an oscillatory decay in the propagation direction. This unusual field penetration is explained by the interference between these contributions, and is experimentally confirmed through an aperture which is engineered with four arms stretched out from a simple circle to manipulate a specific plasmonic excitation available in the metal film. A numerical simulation quantitatively supports the experiment. This fundamental characteristic will impact plasmonics with the near-fields designed by aperture engineering for practical applications.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of A novel blue-enhanced photodetector using honeycomb structure

2015 IEEE SENSORS, 2015

In this paper, we present a honeycomb structure to maximize the edge-length in the detector and t... more In this paper, we present a honeycomb structure to maximize the edge-length in the detector and therefore enhance the detector responsivity in the blue region of the spectrum. A layout of a prototype honeycomb detector was designed and fabricated on a silicon wafer using a standard CMOS process. Based on our measured spectral response, the honeycomb structure improves the photocurrent in blue by about 60%. Moreover, the honeycomb detector demonstrates 20% less dark current than in conventional detector. Simulation results using MEDICI confirm the measured data.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of CMOS-compatible plenoptic detector for LED lighting applications

Optics express, Jan 7, 2015

LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, o... more LED lighting systems with large color gamuts, with multiple LEDs spanning the visible spectrum, offer the potential of increased lighting efficiency, improved human health and productivity, and visible light communications addressing the explosive growth in wireless communications. The control of this "smart lighting system" requires a silicon-integrated-circuit-compatible, visible, plenoptic (angle and wavelength) detector. A detector element, based on an offset-grating-coupled dielectric waveguide structure and a silicon photodetector, is demonstrated with an angular resolution of less than 1° and a wavelength resolution of less than 5 nm.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate

Proceedings of SPIE - The International Society for Optical Engineering, 2009

ABSTRACT InAs quantum dots embedded in InGaAs quantum well (DWELL) structures grown by metal-orga... more ABSTRACT InAs quantum dots embedded in InGaAs quantum well (DWELL) structures grown by metal-organic chemical-vapor deposition on nano-patterned GaAs pyramids and planar GaAs (001) substrate are comparatively investigated. Photoluminescence (PL), PL excitation, and time-resolved PL measurements demonstrate that the DWELL grown on the GaAs pyramids has a broad QW PL band (FWHM ~ 90 meV) and a better QD emission efficiency than the DWELL structure grown on the planar GaAs (001) substrate. These properties are attributed to the InGaAs QW with distributed thickness profile on the faceted GaAs pyramid, which introduces tapered energy band structure and assists the carrier capture into the QDs. This research provides useful data for further improving the performance of DWELL structures for device applications.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Study of barrier coats for application in immersion 193-nm lithography

SPIE Proceedings, 2005

We will describe our barrier coat approach for use in immersion 193 nm lithography. These barrier... more We will describe our barrier coat approach for use in immersion 193 nm lithography. These barrier coats may act as either simple barriers providing protection against loss of resist components into water or in the case of one type of these formulations which have a refractive index at ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Advanced Optical Negative Index Materials

Frontiers in Optics, 2006

ABSTRACT

Bookmarks Related papers MentionsView impact

Research paper thumbnail of LASERS, OPTICS, AND OPTOELECTRONICS 071101 Efficient single-photon frequency upconversion at 1.06 m with ultralow background counts (3 pages)

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Subpicosecond Optical Switching with a Negative Index Metamaterial

Nano Letters, 2009

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

Applied Physics Letters, 2013

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard elec... more GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting {111} planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100 μA is found fixed at 487 nm (peak), 516 nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Design of Chirped Gratings Using Interferometric Lithography

IEEE Photonics Journal, 2018

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Developing Pulsed Fiber Lasers

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Measurement of the Linewidth Enhancement Factor at High Excitation Levels

Bookmarks Related papers MentionsView impact