Sukti Chatterjee - Academia.edu (original) (raw)

Papers by Sukti Chatterjee

2D Materials, 2021

Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (... more Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 Wm-1 K-1), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD). Here, we demonstrate single-and few-layer h-BN synthesized by CVD on single crystal platinum and on carbon nanotube (CNT) substrates, also comparing these films with h-BN deposited on the more commonly used polycrystalline Pt and Cu growth substrates. The h-BN film grown on single crystal Pt has a lower surface roughness and is more spatially homogeneous than the film from a polycrystalline Pt foil, and our electrochemical transfer process allows for these expensive foils to be reused with no measurable degradation. In addition, we demonstrate monolayer h-BN as an ultrathin, 3.33 Å barrier protecting MoS2 from damage at high temperatures and discuss other applications that take advantage of the conformal h-BN deposition on various substrates demonstrated in this work.

Journal of Materials Science, 2008

Polymer-ITO (PI) nanocomposite templates with various ITO concentrations have been fabricated by ... more Polymer-ITO (PI) nanocomposite templates with various ITO concentrations have been fabricated by electrospinning. These templates look like a mat with tangled nanofibers, and are optically transparent (85-90%) in the visible region of the solar spectrum (400-700 nm). The electronic properties of those transparent films were studied. The highest conductivity achieved is 1.04 9 10 3 S cm-1. The promising optoelectronic properties present the great promise of PI nanocomposites to be the top layer of the next generation flexible photo devices, like solar cells and light emitting diodes (LED).

Japanese Journal of Applied Physics, 2008

To study the interaction of Ge atoms with titania (TiO 2) nanoparticles, we synthesized Ge-doped ... more To study the interaction of Ge atoms with titania (TiO 2) nanoparticles, we synthesized Ge-doped titania films by sol-gel method. The structural properties of Ge-doped titania films describe us that Ge ions (Ge 4þ) could be incorporated in the TiO 2 lattice by substituting Ti ions (Ti 4þ). Introduction of Ge 4þ makes a distortion in the TiO 2 lattice. As a result, the optoelectronic properties of doped titania films change with the doping concentration of Ge.

Nanotechnology, 2008

The introduction of germanium (Ge) into titania (TiO(2)) creates an attractive semiconductor. The... more The introduction of germanium (Ge) into titania (TiO(2)) creates an attractive semiconductor. The new semiconductor is named titania-germanium (TiO(2)-Ge). Ge dots are dispersed in the distorted TiO(2) matrix of TiO(2)-Ge. The quantum Bohr radius of Ge is 24.3 nm, and hence the properties of the Ge dot can be varied by tailoring its size if it is smaller than its Bohr radius due to the quantum confinement effect (QCE). Therefore, simply by changing the Ge concentration, the morphology of TiO(2)-Ge can be varied within a wide range. Consequently, the optical, electronic and thermal properties of TiO(2)-Ge can be tailored. TiO(2)-Ge becomes a promising material for the next generation of photovoltaics as well as thermoelectric devices. It could also be used for photo-thermo-electric applications.

2D Materials, 2021

Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (... more Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 Wm-1 K-1), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD). Here, we demonstrate single-and few-layer h-BN synthesized by CVD on single crystal platinum and on carbon nanotube (CNT) substrates, also comparing these films with h-BN deposited on the more commonly used polycrystalline Pt and Cu growth substrates. The h-BN film grown on single crystal Pt has a lower surface roughness and is more spatially homogeneous than the film from a polycrystalline Pt foil, and our electrochemical transfer process allows for these expensive foils to be reused with no measurable degradation. In addition, we demonstrate monolayer h-BN as an ultrathin, 3.33 Å barrier protecting MoS2 from damage at high temperatures and discuss other applications that take advantage of the conformal h-BN deposition on various substrates demonstrated in this work.

Journal of Materials Science, 2008

Polymer-ITO (PI) nanocomposite templates with various ITO concentrations have been fabricated by ... more Polymer-ITO (PI) nanocomposite templates with various ITO concentrations have been fabricated by electrospinning. These templates look like a mat with tangled nanofibers, and are optically transparent (85-90%) in the visible region of the solar spectrum (400-700 nm). The electronic properties of those transparent films were studied. The highest conductivity achieved is 1.04 9 10 3 S cm-1. The promising optoelectronic properties present the great promise of PI nanocomposites to be the top layer of the next generation flexible photo devices, like solar cells and light emitting diodes (LED).

Japanese Journal of Applied Physics, 2008

To study the interaction of Ge atoms with titania (TiO 2) nanoparticles, we synthesized Ge-doped ... more To study the interaction of Ge atoms with titania (TiO 2) nanoparticles, we synthesized Ge-doped titania films by sol-gel method. The structural properties of Ge-doped titania films describe us that Ge ions (Ge 4þ) could be incorporated in the TiO 2 lattice by substituting Ti ions (Ti 4þ). Introduction of Ge 4þ makes a distortion in the TiO 2 lattice. As a result, the optoelectronic properties of doped titania films change with the doping concentration of Ge.

Nanotechnology, 2008

The introduction of germanium (Ge) into titania (TiO(2)) creates an attractive semiconductor. The... more The introduction of germanium (Ge) into titania (TiO(2)) creates an attractive semiconductor. The new semiconductor is named titania-germanium (TiO(2)-Ge). Ge dots are dispersed in the distorted TiO(2) matrix of TiO(2)-Ge. The quantum Bohr radius of Ge is 24.3 nm, and hence the properties of the Ge dot can be varied by tailoring its size if it is smaller than its Bohr radius due to the quantum confinement effect (QCE). Therefore, simply by changing the Ge concentration, the morphology of TiO(2)-Ge can be varied within a wide range. Consequently, the optical, electronic and thermal properties of TiO(2)-Ge can be tailored. TiO(2)-Ge becomes a promising material for the next generation of photovoltaics as well as thermoelectric devices. It could also be used for photo-thermo-electric applications.