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Papers by SungChoon Kang
18th International Communications Satellite Systems Conference and Exhibit, 2000
Proceedings of 1997 Asia-Pacific Microwave Conference, 1997
In design of microwave multi-stage amplifiers composed of N amplifier modules, the large variatio... more In design of microwave multi-stage amplifiers composed of N amplifier modules, the large variations in gain and flatness of amplifier as various connection length between modules have been studied. The methods, equations and conditions for the maximum gain or the most flat gain within bandwidth are presented. The sensitivity analysis for the connection length shows that the small changes of
Thesis (Ph. D.)--Ohio State University, 1991. Includes bibliographical references. Advisor: Patri... more Thesis (Ph. D.)--Ohio State University, 1991. Includes bibliographical references. Advisor: Patrick Roblin, Dept. of Electrical Engineering.
1999 Asia Pacific Microwave Conference. APMC'99. Microwaves Enter the 21st Century. Conference Proceedings (Cat. No.99TH8473)
High power MMIC wideband power amplifiers for 20/30 GHz systems have been developed using the 0.1... more High power MMIC wideband power amplifiers for 20/30 GHz systems have been developed using the 0.15 μm InGaAs-AlGaAs-GaAs pHEMT technology. These two MMIC 1 watt power amplifiers were fabricated on a 4-mil GaAs wafer. Both MMIC power amplifiers showed 12~15 dB of linear gain and 30 dBm of output power with more than 20% power-added efficiency over their wide operating
APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577), 2001
ABSTRACT A novel linearization technique for a RF high power amplifier (HPA) using a fifth-order ... more ABSTRACT A novel linearization technique for a RF high power amplifier (HPA) using a fifth-order error signal generator (ESG5) is presented. The proposed method employs the input signal to generate the equal amplitude but anti-phase intermodulation components produced by the HPA. This signal is combined at the output of HPA to reduce the intermodulation distortion levels. Hence the stability of the system is guaranteed due to the open loop configuration, and broadband operation is also possible similar to feedforward systems
IEEE International Symposium on Circuits and Systems
ABSTRACT An analytic solution has been derived for the MOSFET/MODFET wave equation including velo... more ABSTRACT An analytic solution has been derived for the MOSFET/MODFET wave equation including velocity saturation and channel length modulation, and results on its application to the prediction of the microwave characteristics of a MODFET are presented. A theoretical investigation of the high-frequency dependence of the calculated unilateral power gain U has been carried out, and conditions under which a switch from a 6-dB to 12-dB drop per octave is possible at large frequencies are reported. Novel current and voltage gains are proposed which permit meaningful comparison of the ordering of the current and voltage gain cutoff-frequencies with fmax
IEEE Transactions on Electron Devices, 1992
IEEE Transactions on Electron Devices, 1987
IEEE Transactions on Electron Devices, 1992
IEEE Transactions on Electron Devices, 1990
NOM ENC L AT U R E Gate capacitance per unit area. Channel width in the saturation region. Critic... more NOM ENC L AT U R E Gate capacitance per unit area. Channel width in the saturation region. Critical electric field to attain the peak ve-locity. Dielectric constant for the channel mate-rial. ' Average dielectric constant for the high-bandgap region. Total current in the ...
IEEE Transactions on Electron Devices, 1990
NOM ENC L AT U R E Gate capacitance per unit area. Channel width in the saturation region. Critic... more NOM ENC L AT U R E Gate capacitance per unit area. Channel width in the saturation region. Critical electric field to attain the peak ve-locity. Dielectric constant for the channel mate-rial. ' Average dielectric constant for the high-bandgap region. Total current in the ...
IEEE Transactions on Electron Devices, 1991
A simple non-quasi-static small-signal equivalent circuit model is derived for the ideal MOSFET w... more A simple non-quasi-static small-signal equivalent circuit model is derived for the ideal MOSFET wave equation under the gradual channel approximation. This equivalent circuit represents each Y-parameter by its DC small-signal value shunted by a (trans) capacitor in series with a charging (trans) resistor. A large-signal model for the intrinsic MOSFET is derived by first implementing this RC topology in the
18th International Communications Satellite Systems Conference and Exhibit, 2000
Proceedings of 1997 Asia-Pacific Microwave Conference, 1997
In design of microwave multi-stage amplifiers composed of N amplifier modules, the large variatio... more In design of microwave multi-stage amplifiers composed of N amplifier modules, the large variations in gain and flatness of amplifier as various connection length between modules have been studied. The methods, equations and conditions for the maximum gain or the most flat gain within bandwidth are presented. The sensitivity analysis for the connection length shows that the small changes of
Thesis (Ph. D.)--Ohio State University, 1991. Includes bibliographical references. Advisor: Patri... more Thesis (Ph. D.)--Ohio State University, 1991. Includes bibliographical references. Advisor: Patrick Roblin, Dept. of Electrical Engineering.
1999 Asia Pacific Microwave Conference. APMC'99. Microwaves Enter the 21st Century. Conference Proceedings (Cat. No.99TH8473)
High power MMIC wideband power amplifiers for 20/30 GHz systems have been developed using the 0.1... more High power MMIC wideband power amplifiers for 20/30 GHz systems have been developed using the 0.15 μm InGaAs-AlGaAs-GaAs pHEMT technology. These two MMIC 1 watt power amplifiers were fabricated on a 4-mil GaAs wafer. Both MMIC power amplifiers showed 12~15 dB of linear gain and 30 dBm of output power with more than 20% power-added efficiency over their wide operating
APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577), 2001
ABSTRACT A novel linearization technique for a RF high power amplifier (HPA) using a fifth-order ... more ABSTRACT A novel linearization technique for a RF high power amplifier (HPA) using a fifth-order error signal generator (ESG5) is presented. The proposed method employs the input signal to generate the equal amplitude but anti-phase intermodulation components produced by the HPA. This signal is combined at the output of HPA to reduce the intermodulation distortion levels. Hence the stability of the system is guaranteed due to the open loop configuration, and broadband operation is also possible similar to feedforward systems
IEEE International Symposium on Circuits and Systems
ABSTRACT An analytic solution has been derived for the MOSFET/MODFET wave equation including velo... more ABSTRACT An analytic solution has been derived for the MOSFET/MODFET wave equation including velocity saturation and channel length modulation, and results on its application to the prediction of the microwave characteristics of a MODFET are presented. A theoretical investigation of the high-frequency dependence of the calculated unilateral power gain U has been carried out, and conditions under which a switch from a 6-dB to 12-dB drop per octave is possible at large frequencies are reported. Novel current and voltage gains are proposed which permit meaningful comparison of the ordering of the current and voltage gain cutoff-frequencies with fmax
IEEE Transactions on Electron Devices, 1992
IEEE Transactions on Electron Devices, 1987
IEEE Transactions on Electron Devices, 1992
IEEE Transactions on Electron Devices, 1990
NOM ENC L AT U R E Gate capacitance per unit area. Channel width in the saturation region. Critic... more NOM ENC L AT U R E Gate capacitance per unit area. Channel width in the saturation region. Critical electric field to attain the peak ve-locity. Dielectric constant for the channel mate-rial. ' Average dielectric constant for the high-bandgap region. Total current in the ...
IEEE Transactions on Electron Devices, 1990
NOM ENC L AT U R E Gate capacitance per unit area. Channel width in the saturation region. Critic... more NOM ENC L AT U R E Gate capacitance per unit area. Channel width in the saturation region. Critical electric field to attain the peak ve-locity. Dielectric constant for the channel mate-rial. ' Average dielectric constant for the high-bandgap region. Total current in the ...
IEEE Transactions on Electron Devices, 1991
A simple non-quasi-static small-signal equivalent circuit model is derived for the ideal MOSFET w... more A simple non-quasi-static small-signal equivalent circuit model is derived for the ideal MOSFET wave equation under the gradual channel approximation. This equivalent circuit represents each Y-parameter by its DC small-signal value shunted by a (trans) capacitor in series with a charging (trans) resistor. A large-signal model for the intrinsic MOSFET is derived by first implementing this RC topology in the