Suvi Haukka - Academia.edu (original) (raw)
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Papers by Suvi Haukka
Thermochimica Acta, 1990
ABSTRACT
Journal of Solid State Chemistry, 1991
Uptake of Ag+ions by potassium cobalt hexacyanoferrate(II), K2CoFe(CN)6 . 1.4H2O, was found to oc... more Uptake of Ag+ions by potassium cobalt hexacyanoferrate(II), K2CoFe(CN)6 . 1.4H2O, was found to occur in a stepwise manner. The maximum uptake value was 4.9 moles per mole of K2CoFe(CN)6. The solid products formed at the maximum uptake were AgCN, Ag4Fe(CN)6, Fe4[Fe(CN)6]3, and Fe(OH)3, the first one being the dominant product. In addition, the distribution coefficient (KD) of trace silver (110mAg)
The need for continuous down-scaling of device feature size calls for implementation of novel mat... more The need for continuous down-scaling of device feature size calls for implementation of novel materials and processing techniques in future semiconductor processing technology. This paper concentrates primarily on the high-k oxide deposition of ZrO 2 , HfO 2 and their mixtures with SiO 2 and Al 2 O 3 with the atomic layer deposition (ALD) technique. With ALD the oxide thin films are produced stepwise - molecular layer by molecular layer. Since the future thin films, especially in CMOS structures, will be ultra thin the main emphasis in the paper is on the effect of starting surface on the individual metal compound reactions and on the ALD growth during the very first reaction cycles. It is shown that the ALD growth can in great detail be characterized and the growth mode controlled due to the stepwise nature of the deposition.
ECS Meeting Abstracts, 2005
not Available.
ECS Meeting Abstracts, 2005
not Available.
(57) Abstract: The present invention generally relates to a method of depositing a transition met... more (57) Abstract: The present invention generally relates to a method of depositing a transition metal carbide thin film. In particular, the invention relates to a method of depositing a transition metal carbide thin film by atomic layer deposition (ALD), wherein the transition metal source compound and a carbon source compound is provided to the substrate alternately. Various metals and carbon source gas is disclosed. The method to form a metal carbide thin film in semiconductor manufacturing, and particularly applicable to forming the trench (1) and via (2) a thin conductive diffusion barrier in an integrated circuit with an opening (6) is there.
Thermochimica Acta, 1990
ABSTRACT
Journal of Solid State Chemistry, 1991
Uptake of Ag+ions by potassium cobalt hexacyanoferrate(II), K2CoFe(CN)6 . 1.4H2O, was found to oc... more Uptake of Ag+ions by potassium cobalt hexacyanoferrate(II), K2CoFe(CN)6 . 1.4H2O, was found to occur in a stepwise manner. The maximum uptake value was 4.9 moles per mole of K2CoFe(CN)6. The solid products formed at the maximum uptake were AgCN, Ag4Fe(CN)6, Fe4[Fe(CN)6]3, and Fe(OH)3, the first one being the dominant product. In addition, the distribution coefficient (KD) of trace silver (110mAg)
The need for continuous down-scaling of device feature size calls for implementation of novel mat... more The need for continuous down-scaling of device feature size calls for implementation of novel materials and processing techniques in future semiconductor processing technology. This paper concentrates primarily on the high-k oxide deposition of ZrO 2 , HfO 2 and their mixtures with SiO 2 and Al 2 O 3 with the atomic layer deposition (ALD) technique. With ALD the oxide thin films are produced stepwise - molecular layer by molecular layer. Since the future thin films, especially in CMOS structures, will be ultra thin the main emphasis in the paper is on the effect of starting surface on the individual metal compound reactions and on the ALD growth during the very first reaction cycles. It is shown that the ALD growth can in great detail be characterized and the growth mode controlled due to the stepwise nature of the deposition.
ECS Meeting Abstracts, 2005
not Available.
ECS Meeting Abstracts, 2005
not Available.
(57) Abstract: The present invention generally relates to a method of depositing a transition met... more (57) Abstract: The present invention generally relates to a method of depositing a transition metal carbide thin film. In particular, the invention relates to a method of depositing a transition metal carbide thin film by atomic layer deposition (ALD), wherein the transition metal source compound and a carbon source compound is provided to the substrate alternately. Various metals and carbon source gas is disclosed. The method to form a metal carbide thin film in semiconductor manufacturing, and particularly applicable to forming the trench (1) and via (2) a thin conductive diffusion barrier in an integrated circuit with an opening (6) is there.