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Research paper thumbnail of Assessing intrinsic and extrinsic end-of-life risk using functional SRAM wafer level testing

2015 IEEE International Reliability Physics Symposium, 2015

Extended 6 Transistors (6T) SRAM (Static Random-Access Memory) characterization is used to measur... more Extended 6 Transistors (6T) SRAM (Static Random-Access Memory) characterization is used to measure degradation while separating intrinsic from extrinsic yield and accounting for yield assessment challenges such as voltage drop and measurement variability. Separation of extrinsic yield pre-and post-stress reveals weak yield fixes and reduces HTOL (High Temperature Operating Life) failure risk.

Research paper thumbnail of HTOL SRAM Vmin shift considerations in scaled HKMG technologies

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 2014

Research paper thumbnail of Assessing intrinsic and extrinsic end-of-life risk using functional SRAM wafer level testing

2015 IEEE International Reliability Physics Symposium, 2015

Extended 6 Transistors (6T) SRAM (Static Random-Access Memory) characterization is used to measur... more Extended 6 Transistors (6T) SRAM (Static Random-Access Memory) characterization is used to measure degradation while separating intrinsic from extrinsic yield and accounting for yield assessment challenges such as voltage drop and measurement variability. Separation of extrinsic yield pre-and post-stress reveals weak yield fixes and reduces HTOL (High Temperature Operating Life) failure risk.

Research paper thumbnail of HTOL SRAM Vmin shift considerations in scaled HKMG technologies

Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, 2014

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