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Papers by Thilak Senanayake
2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)
電気・電子・情報関係学会東海支部連合大会講演論文集(CD-ROM), 2019
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia), 2018
Impedance-source inverter using SiC-MOSFET was studied. A 3-kW laboratory level inverter had the ... more Impedance-source inverter using SiC-MOSFET was studied. A 3-kW laboratory level inverter had the efficiency of about 96 % at the condition of output boost ratio G of 1.77 (boost ratio B of 2.5), output power of 3.16 kW and input voltage of 240 V. At lower G case of 1.32 (B of 1.61), the efficiency of impedance-source inverter was increased by 97.4 % due to low conduction loss of SiC-MOSFET.
IEICE Transactions on Electronics
This paper proposes a topology of high power, MHzfrequency, half-bridge resonant inverter ideal f... more This paper proposes a topology of high power, MHzfrequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from delivering high power to high resistance loads such as 50Ω, which is typically used in radio frequency (RF) systems. High resistance load causes hardswitching also and reduction of power efficiency. The proposed topology overcomes these difficulties by utilizing a proposed 'L-S network'. This network is effective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high efficiency is achieved in the power circuit in 471W experimental prototype.
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, 2005
ABSTRACT This paper proposes a novel auto-reset forward DC-DC converter with inductor-switching t... more ABSTRACT This paper proposes a novel auto-reset forward DC-DC converter with inductor-switching technique to obtain the high performance by means of zero voltage switching and the fast transient response at steep load variations. The performance of the forward converter is strongly depending on the transformer reset-method. The Auto-reset method is used to recover the energy stored in leakage inductances of the transformer to the power supply and makes sure the zero voltage switching. Furthermore fast transient response is achieved by applying the inductor-switching technique, which keeps the output voltage constant in case of heavy burden load changes. The design of the proposed concept is verified by experiment of 12 V input and 1.8 V/12 A output.
AGU Fall Meeting Abstracts, Dec 1, 2009
ABSTRACT
Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04.
... Current Amplification and Absorption Technique Thilak Senanayake, Tamotsu Ninomiya Department... more ... Current Amplification and Absorption Technique Thilak Senanayake, Tamotsu Ninomiya Department of Electrical and Electronic Systems Engineering Graduate School of Information Science and Electrical Engineering Kyushu University, Fukuoka, Japan s_thilak@ieee.org ...
Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04.
... Current Amplification and Absorption Technique Thilak Senanayake, Tamotsu Ninomiya Department... more ... Current Amplification and Absorption Technique Thilak Senanayake, Tamotsu Ninomiya Department of Electrical and Electronic Systems Engineering Graduate School of Information Science and Electrical Engineering Kyushu University, Fukuoka, Japan s_thilak@ieee.org ...
Procedia - Social and Behavioral Sciences, 2004
The designing a DC-DC converter with diode rectifier involves several engineering tradeoffs that ... more The designing a DC-DC converter with diode rectifier involves several engineering tradeoffs that weigh efficiency against cost and complexity. Higher efficiencies can be obtained when Schottky rectifiers are replaced by synchronous rectifiers, allowing lower voltage drops. In this paper autoreset synchronous rectifier inductor-switching forward DC-DC converter with self-reset mechanism is proposed. Autoreset clamp which returns energy stored in the leakage inductance of the transformer to the power supply and the synchronous rectifier in input and output sides are increased the efficiency more than 92%. Further more fast transient response is achieved by applying the inductor-switching technique, which was presented in our prior work. The design of the concept is verified by experiment of 12 V input and 1.8 V/12 A output.
IEEE Transactions on Industrial Electronics, 2005
An improved version of an inductor-switching fast-response dc-dc converter is presented that will... more An improved version of an inductor-switching fast-response dc-dc converter is presented that will provide the requirements and features of the new generation of microprocessor and digital systems. Lower output voltage, higher output current, and smaller output voltage ripple requirements have greatly increased the difficulty of the power supply design. To further increase the problem, power-saving "stop-clock" modes of the microprocessor has demanded faster and more stable transient response from the dc-dc converter. A novel method of inductor switching is applied to a dc-dc converter, and it provides the prominent features of current amplification and absorption during the heavy burden of load transients. The design and simulation of the concept is verified by experiment with a 12-V input and 3.3-V/30-A output converter.
2020 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), 2020
High-power inverters with high frequency have been required for progressing technologies such as ... more High-power inverters with high frequency have been required for progressing technologies such as wireless power transfer (WPT) and plasma processing. Recently, gallium nitride high electron mobility transistor (GaN-HEMT) is getting lots of attention from the viewpoint of fast switching ability and low power consumption. However, GaN-HEMT inverters are difficult to be operated in over several kW because of its low drain-source breakdown voltage. In other words, the conventional half-bridge GaN-HEMT inverter can output high power only for the small load resistance less than several-$\Omega$. This paper overcomes this difficulty by implementing an impedance conversion network in the prior stage of the series resonator. The proposed topology realizes not only high-power from low drain-source voltage but also the sine wave output with very low harmonics. 3kW output to 50Omega50\Omega50Omega load at 13.56MHz is theoretically designed, and verified by computer simulations. And also, the experimental p...
2020 IEEE 29th International Symposium on Industrial Electronics (ISIE), 2020
Both silicon-carbide (SiC) and gallium-nitride (GaN) are wide bandgap power transistor which are ... more Both silicon-carbide (SiC) and gallium-nitride (GaN) are wide bandgap power transistor which are developing rapidly. They are able to be used as the main switches in the high-frequency power conversion systems successfully. These high-frequency switches just meet the high demand of low-size power electronics device in recent years. As the high-frequency system always relies on the switches, we designed and made evaluation boards for both SiC and GaN switches by 13. 56MHz half-bridge inverter. Both simulation and experimental results show that GaN achieved more successfully switching, which made good output waveform with very short dead-time. And in simulation, lower switching loss of GaN is also confirmed. As all above, it is obvious that GaN device is more suitable for high-frequency application.
A new fast-response high-current clamp DC-DC converter circuit design is presented that will meet... more A new fast-response high-current clamp DC-DC converter circuit design is presented that will meet the requirements and features of the new generation of microprocessors and digital systems. The clamp in the proposed converter amplifies and absorbs the current in case of severe load changes and is able to produce high slew rate of load current and capability to keep constant the output voltage.
2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), 2018
An improved circuit topology of quasi Z-source inverter is presented that will meet the requireme... more An improved circuit topology of quasi Z-source inverter is presented that will meet the requirements and features of the Hybrid/Electric vehicle power control system. It is able to perform one pulse control for motor drive control depending on the drive condition of a motor which cannot be achieved from the conventional quasi Z-source inverter.
A new fast-response high-current clamp DC-DC converter circuit design is presented that will meet... more A new fast-response high-current clamp DC-DC converter circuit design is presented that will meet the requirements and features of the new generation of microprocessors and digital systems The clamp in the proposed converter amplifies the current in case of severe load changes and is able to produce high slew rate of output current and capability to keep constant the output voltage This proposed high-current clamp technique is theoretically loss less, low cost and easy to implement with simple control scheme. This is modified from a basic buck topology by replacing the output inductor with two magnetically coupled inductors. Inductors are difference in inductance, one has large inductance and other has small inductance The inductor with small inductance will take over the output inductor during fast load transient It speedup the output current slew rate and reduce the output voltage drop in the case of heavy burden load changes.
2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)
電気・電子・情報関係学会東海支部連合大会講演論文集(CD-ROM), 2019
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia), 2018
Impedance-source inverter using SiC-MOSFET was studied. A 3-kW laboratory level inverter had the ... more Impedance-source inverter using SiC-MOSFET was studied. A 3-kW laboratory level inverter had the efficiency of about 96 % at the condition of output boost ratio G of 1.77 (boost ratio B of 2.5), output power of 3.16 kW and input voltage of 240 V. At lower G case of 1.32 (B of 1.61), the efficiency of impedance-source inverter was increased by 97.4 % due to low conduction loss of SiC-MOSFET.
IEICE Transactions on Electronics
This paper proposes a topology of high power, MHzfrequency, half-bridge resonant inverter ideal f... more This paper proposes a topology of high power, MHzfrequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from delivering high power to high resistance loads such as 50Ω, which is typically used in radio frequency (RF) systems. High resistance load causes hardswitching also and reduction of power efficiency. The proposed topology overcomes these difficulties by utilizing a proposed 'L-S network'. This network is effective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high efficiency is achieved in the power circuit in 471W experimental prototype.
IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, 2005
ABSTRACT This paper proposes a novel auto-reset forward DC-DC converter with inductor-switching t... more ABSTRACT This paper proposes a novel auto-reset forward DC-DC converter with inductor-switching technique to obtain the high performance by means of zero voltage switching and the fast transient response at steep load variations. The performance of the forward converter is strongly depending on the transformer reset-method. The Auto-reset method is used to recover the energy stored in leakage inductances of the transformer to the power supply and makes sure the zero voltage switching. Furthermore fast transient response is achieved by applying the inductor-switching technique, which keeps the output voltage constant in case of heavy burden load changes. The design of the proposed concept is verified by experiment of 12 V input and 1.8 V/12 A output.
AGU Fall Meeting Abstracts, Dec 1, 2009
ABSTRACT
Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04.
... Current Amplification and Absorption Technique Thilak Senanayake, Tamotsu Ninomiya Department... more ... Current Amplification and Absorption Technique Thilak Senanayake, Tamotsu Ninomiya Department of Electrical and Electronic Systems Engineering Graduate School of Information Science and Electrical Engineering Kyushu University, Fukuoka, Japan s_thilak@ieee.org ...
Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04.
... Current Amplification and Absorption Technique Thilak Senanayake, Tamotsu Ninomiya Department... more ... Current Amplification and Absorption Technique Thilak Senanayake, Tamotsu Ninomiya Department of Electrical and Electronic Systems Engineering Graduate School of Information Science and Electrical Engineering Kyushu University, Fukuoka, Japan s_thilak@ieee.org ...
Procedia - Social and Behavioral Sciences, 2004
The designing a DC-DC converter with diode rectifier involves several engineering tradeoffs that ... more The designing a DC-DC converter with diode rectifier involves several engineering tradeoffs that weigh efficiency against cost and complexity. Higher efficiencies can be obtained when Schottky rectifiers are replaced by synchronous rectifiers, allowing lower voltage drops. In this paper autoreset synchronous rectifier inductor-switching forward DC-DC converter with self-reset mechanism is proposed. Autoreset clamp which returns energy stored in the leakage inductance of the transformer to the power supply and the synchronous rectifier in input and output sides are increased the efficiency more than 92%. Further more fast transient response is achieved by applying the inductor-switching technique, which was presented in our prior work. The design of the concept is verified by experiment of 12 V input and 1.8 V/12 A output.
IEEE Transactions on Industrial Electronics, 2005
An improved version of an inductor-switching fast-response dc-dc converter is presented that will... more An improved version of an inductor-switching fast-response dc-dc converter is presented that will provide the requirements and features of the new generation of microprocessor and digital systems. Lower output voltage, higher output current, and smaller output voltage ripple requirements have greatly increased the difficulty of the power supply design. To further increase the problem, power-saving "stop-clock" modes of the microprocessor has demanded faster and more stable transient response from the dc-dc converter. A novel method of inductor switching is applied to a dc-dc converter, and it provides the prominent features of current amplification and absorption during the heavy burden of load transients. The design and simulation of the concept is verified by experiment with a 12-V input and 3.3-V/30-A output converter.
2020 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), 2020
High-power inverters with high frequency have been required for progressing technologies such as ... more High-power inverters with high frequency have been required for progressing technologies such as wireless power transfer (WPT) and plasma processing. Recently, gallium nitride high electron mobility transistor (GaN-HEMT) is getting lots of attention from the viewpoint of fast switching ability and low power consumption. However, GaN-HEMT inverters are difficult to be operated in over several kW because of its low drain-source breakdown voltage. In other words, the conventional half-bridge GaN-HEMT inverter can output high power only for the small load resistance less than several-$\Omega$. This paper overcomes this difficulty by implementing an impedance conversion network in the prior stage of the series resonator. The proposed topology realizes not only high-power from low drain-source voltage but also the sine wave output with very low harmonics. 3kW output to 50Omega50\Omega50Omega load at 13.56MHz is theoretically designed, and verified by computer simulations. And also, the experimental p...
2020 IEEE 29th International Symposium on Industrial Electronics (ISIE), 2020
Both silicon-carbide (SiC) and gallium-nitride (GaN) are wide bandgap power transistor which are ... more Both silicon-carbide (SiC) and gallium-nitride (GaN) are wide bandgap power transistor which are developing rapidly. They are able to be used as the main switches in the high-frequency power conversion systems successfully. These high-frequency switches just meet the high demand of low-size power electronics device in recent years. As the high-frequency system always relies on the switches, we designed and made evaluation boards for both SiC and GaN switches by 13. 56MHz half-bridge inverter. Both simulation and experimental results show that GaN achieved more successfully switching, which made good output waveform with very short dead-time. And in simulation, lower switching loss of GaN is also confirmed. As all above, it is obvious that GaN device is more suitable for high-frequency application.
A new fast-response high-current clamp DC-DC converter circuit design is presented that will meet... more A new fast-response high-current clamp DC-DC converter circuit design is presented that will meet the requirements and features of the new generation of microprocessors and digital systems. The clamp in the proposed converter amplifies and absorbs the current in case of severe load changes and is able to produce high slew rate of load current and capability to keep constant the output voltage.
2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), 2018
An improved circuit topology of quasi Z-source inverter is presented that will meet the requireme... more An improved circuit topology of quasi Z-source inverter is presented that will meet the requirements and features of the Hybrid/Electric vehicle power control system. It is able to perform one pulse control for motor drive control depending on the drive condition of a motor which cannot be achieved from the conventional quasi Z-source inverter.
A new fast-response high-current clamp DC-DC converter circuit design is presented that will meet... more A new fast-response high-current clamp DC-DC converter circuit design is presented that will meet the requirements and features of the new generation of microprocessors and digital systems The clamp in the proposed converter amplifies the current in case of severe load changes and is able to produce high slew rate of output current and capability to keep constant the output voltage This proposed high-current clamp technique is theoretically loss less, low cost and easy to implement with simple control scheme. This is modified from a basic buck topology by replacing the output inductor with two magnetically coupled inductors. Inductors are difference in inductance, one has large inductance and other has small inductance The inductor with small inductance will take over the output inductor during fast load transient It speedup the output current slew rate and reduce the output voltage drop in the case of heavy burden load changes.