M. Tilli - Academia.edu (original) (raw)
Papers by M. Tilli
The contrast in transmission topographs of a thin Si crystal was studied as a function of bending... more The contrast in transmission topographs of a thin Si crystal was studied as a function of bending. Grain boundaries in a polycrystalline silicon slice were topographed with back reflection showing the general structure of the grain boundaries as well as twins. Transmission Laue pattern of a silicon crystal containing a number of integrated circuits revealed oxide edges of circuit, long
Nuclear Instruments and Methods, 1978
MRS Proceedings, 1984
ABSTRACT 1984 MRS FALL Meet. Symp. K. Boston, USA, 26 - 30 Nov. 1984
Physica Status Solidi (a), 1979
... The few stripe doniains which remain are principally [OOl] vsd's. ... 4e shows the n... more ... The few stripe doniains which remain are principally [OOl] vsd's. ... 4e shows the new domain state after rapid field reversal from -2100 to 3-2100 A/m. The sudden reversal between the saturated states has almost conipletely removed the hsd's leaving a few vsd areas. ...
Sensor Letters, 2007
ABSTRACT We have designed and fabricated micromechanical magnetometers intended for a 3D electron... more ABSTRACT We have designed and fabricated micromechanical magnetometers intended for a 3D electronic compass which could be embedded in portable devices. The sensors are based on the Lorentz force acting on a current-carrying coil, processed on a single crystal silicon resonator. Sensors for all cartesian components of the magnetic field vector can be processed on the same chip. The vibration amplitude is detected capacitively and the resonance is tracked by a phase-locked-loop circuit. The fabrication process is based on aligned direct bonding of a double side polished and a SOI wafer. Magnetometers measuring the field component along the chip surface have a flux density resolution of about 10 nT/√Hz at a coil current of 100 μA Magnetometers measuring the field component perpendicular to the chip surface are currently less sensitive with flux density resolution of about 70 nT/√Hz. Resolution is limited by the fundamental thermomechanical noise. The standard deviation of the signal was less than 1% over a period of 5 days.
Physica Status Solidi (a), 1979
Physica Status Solidi (a), 1979
... The few stripe doniains which remain are principally [OOl] vsd's. ... 4e shows the n... more ... The few stripe doniains which remain are principally [OOl] vsd's. ... 4e shows the new domain state after rapid field reversal from -2100 to 3-2100 A/m. The sudden reversal between the saturated states has almost conipletely removed the hsd's leaving a few vsd areas. ...
Physica Status Solidi (a), 1978
Physica Status Solidi (a), 1980
Physica Scripta, 1997
The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was ... more The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5.2 to 6.7 × 105 1/cm3, when the pulling speed was increased from 0.8 to 1.1 mm/min. The magnitude of this effect was only about half as large, when the pulling speed was increased from 1.1 to 1.3 mm/min. Annealing at 1200 °C for 2 h in argon ambient was found to decrease the FP-defect densities significantly, but less than that in oxygen ambient.
Journal of Materials Research, 1989
Journal of Crystal Growth, 1989
... 1. The second half of the crystal was pulled with constant power from the main heater of the ... more ... 1. The second half of the crystal was pulled with constant power from the main heater of the furnace. This gave an increase in diameter which could be suppressed (at about 220 mm) with an JR power of 600 W. The second crystal (No. ... HR Huff and E. Sirti (Electro chem. ...
Journal of Crystal Growth, 1993
Semi-insulating liquid-encapsulated Czochralski-grown undoped GaAs wafers are investigated by mak... more Semi-insulating liquid-encapsulated Czochralski-grown undoped GaAs wafers are investigated by making section and large-area synchrotron topographs. The results are compared with optical micrographs taken from a cleaved edge of the wafer. A three-dimensional cellular structure is observed. The diameter of a cell is typically 300-500~m. The cell walls consist of dislocations, which have a (011) preferred direction. Their Burgers vector is (101) and their glide plane is {1Tl}. Arsenic precipitates, the density of which is about 108 cm 3, decorate the dislocations. Not all the dislocations form a cellular structure. Some of them are several millimetres long in the same (011) direction as those of the cell walls. Others are parallel to the flat and in the planes which form an angle of 50°with the wafer surface.
Journal of Applied Physics, 1985
ABSTRACT High‐resolution, rapid synchrotron x‐ray topography is used to study oxygen‐induced micr... more ABSTRACT High‐resolution, rapid synchrotron x‐ray topography is used to study oxygen‐induced microdefects and their spatial distribution in a large number of (100) n‐type silicon wafers, which had undergone different two‐stage thermal anneals. Section topographs reveal a 40–60‐μm‐thick defect‐free zone on the surface of a wafer annealed first at 800 °C for 20 h and then at 1150 °C for 4 h.
Journal of Applied Physics, 2013
ABSTRACT The modification of material characteristics by introducing dopant atoms into a crystal ... more ABSTRACT The modification of material characteristics by introducing dopant atoms into a crystal lattice is a fundamental basis for modern micro- and nanosystems technology. In this work, the uneven distribution of dopants is shown to have a remarkable effect on the residual stress and the consequent deformation of released, mechanical silicon structures. In particular, the focus is on segregation of initial dopants inside the bulk silicon which takes place in such fabrication processes as thermal oxidation. A theoretical model based on perceiving the dopant-induced change in Si crystal lattice parameter is developed. We experimentally investigate a series of silicon-on-insulator wafers, including samples with dopant types B, P, and Sb, and concentrations in the range from 1015 to 5 × 1019 atoms cm−3. Released cantilevers are fabricated as test structures and the residual stress is determined by measuring their final curvature. Experimental results are compared with the modelled values obtained utilizing the dopant profiles determined by secondary ion mass spectrometry and concentration distribution simulations. The use of lightly doped substrates or the selection of processes not modifying the underlying Si surface (e.g., plasma enhanced chemical vapour deposition PECVD or metal deposition) is shown to be an effective solution for minimizing the dopant redistribution-induced stress. Besides the scientific impact, knowledge of the stress generated by dopants is of great significance for industrial manufacturing of a wide range of micro- and nanomechanical systems.
DST-J Bras Doencas Sex …, 2005
... Frente a un pH elevado, la paciente puede padecer una VB, pero también el incremento del pH p... more ... Frente a un pH elevado, la paciente puede padecer una VB, pero también el incremento del pH puede deberse a la presencia de otras infecciónes (ej.:T. vaginalis), colonización vaginal(ej ... 5. Goldenberg RL, Thom E, Moawad AH, Johnson F, Roberts J, Caritis SN. ...
American Journal of Medical Genetics, 1998
Nonsyndromic cleft lip with or without cleft palate (CL/P) is a common congenital malformation af... more Nonsyndromic cleft lip with or without cleft palate (CL/P) is a common congenital malformation affecting about 1/1,000 caucasian infants. Although the familial clustering of CL/P has been studied thoroughly, estimation of recurrence risk for genetic counseling purposes can be difficult. A survey was mailed to 912 board-certified genetic counselors, 542 non-board-certified genetic counselors, and 776 board-certified clinical geneticists to investigate the recurrence risks they would assign to three example families with CL/P. Responses were received from 155 (17%) board-certified genetic counselors, 36 (6.6%) non-board-certified genetic counselors, and 100 (18.5%) board-certified clinical geneticists. No major differences were found in their responses, suggesting that for these three families, geneticists would provide similar estimates of risk, regardless of their amount of experience with oral clefts patients, where they are currently employed, or their board certification status.
Anticancer research
The purpose of the study was to evalutate the feasibility of irinotecan drug-eluting beads (DC Be... more The purpose of the study was to evalutate the feasibility of irinotecan drug-eluting beads (DC Bead) administered as trans-arterial chemoembolization (TACE) in patients with liver metastases from colorectal cancer (CRC). Ten patients with liver metastases from CRC were treated with TACE adopting irinotecan-eluting beads at a dose of 100 mg every 3 weeks. Computed Tomography (CT) was performed 24h before and after TACE. TACE with irinotecan eluting beads was found to be feasible and well-tolerated. Right upper quadrant pain (RUQP) lasting 4 days (range 2-7) was reported by all the patients. After 30 days, a reduction >50% of CEA levels and of the lesional contrast enhancement was observed in all the patients. Irinotecan drug-eluting beads administered as TACE were shown to be active and safe in patients with liver metastases from CRC.
The contrast in transmission topographs of a thin Si crystal was studied as a function of bending... more The contrast in transmission topographs of a thin Si crystal was studied as a function of bending. Grain boundaries in a polycrystalline silicon slice were topographed with back reflection showing the general structure of the grain boundaries as well as twins. Transmission Laue pattern of a silicon crystal containing a number of integrated circuits revealed oxide edges of circuit, long
Nuclear Instruments and Methods, 1978
MRS Proceedings, 1984
ABSTRACT 1984 MRS FALL Meet. Symp. K. Boston, USA, 26 - 30 Nov. 1984
Physica Status Solidi (a), 1979
... The few stripe doniains which remain are principally [OOl] vsd's. ... 4e shows the n... more ... The few stripe doniains which remain are principally [OOl] vsd's. ... 4e shows the new domain state after rapid field reversal from -2100 to 3-2100 A/m. The sudden reversal between the saturated states has almost conipletely removed the hsd's leaving a few vsd areas. ...
Sensor Letters, 2007
ABSTRACT We have designed and fabricated micromechanical magnetometers intended for a 3D electron... more ABSTRACT We have designed and fabricated micromechanical magnetometers intended for a 3D electronic compass which could be embedded in portable devices. The sensors are based on the Lorentz force acting on a current-carrying coil, processed on a single crystal silicon resonator. Sensors for all cartesian components of the magnetic field vector can be processed on the same chip. The vibration amplitude is detected capacitively and the resonance is tracked by a phase-locked-loop circuit. The fabrication process is based on aligned direct bonding of a double side polished and a SOI wafer. Magnetometers measuring the field component along the chip surface have a flux density resolution of about 10 nT/√Hz at a coil current of 100 μA Magnetometers measuring the field component perpendicular to the chip surface are currently less sensitive with flux density resolution of about 70 nT/√Hz. Resolution is limited by the fundamental thermomechanical noise. The standard deviation of the signal was less than 1% over a period of 5 days.
Physica Status Solidi (a), 1979
Physica Status Solidi (a), 1979
... The few stripe doniains which remain are principally [OOl] vsd's. ... 4e shows the n... more ... The few stripe doniains which remain are principally [OOl] vsd's. ... 4e shows the new domain state after rapid field reversal from -2100 to 3-2100 A/m. The sudden reversal between the saturated states has almost conipletely removed the hsd's leaving a few vsd areas. ...
Physica Status Solidi (a), 1978
Physica Status Solidi (a), 1980
Physica Scripta, 1997
The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was ... more The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5.2 to 6.7 × 105 1/cm3, when the pulling speed was increased from 0.8 to 1.1 mm/min. The magnitude of this effect was only about half as large, when the pulling speed was increased from 1.1 to 1.3 mm/min. Annealing at 1200 °C for 2 h in argon ambient was found to decrease the FP-defect densities significantly, but less than that in oxygen ambient.
Journal of Materials Research, 1989
Journal of Crystal Growth, 1989
... 1. The second half of the crystal was pulled with constant power from the main heater of the ... more ... 1. The second half of the crystal was pulled with constant power from the main heater of the furnace. This gave an increase in diameter which could be suppressed (at about 220 mm) with an JR power of 600 W. The second crystal (No. ... HR Huff and E. Sirti (Electro chem. ...
Journal of Crystal Growth, 1993
Semi-insulating liquid-encapsulated Czochralski-grown undoped GaAs wafers are investigated by mak... more Semi-insulating liquid-encapsulated Czochralski-grown undoped GaAs wafers are investigated by making section and large-area synchrotron topographs. The results are compared with optical micrographs taken from a cleaved edge of the wafer. A three-dimensional cellular structure is observed. The diameter of a cell is typically 300-500~m. The cell walls consist of dislocations, which have a (011) preferred direction. Their Burgers vector is (101) and their glide plane is {1Tl}. Arsenic precipitates, the density of which is about 108 cm 3, decorate the dislocations. Not all the dislocations form a cellular structure. Some of them are several millimetres long in the same (011) direction as those of the cell walls. Others are parallel to the flat and in the planes which form an angle of 50°with the wafer surface.
Journal of Applied Physics, 1985
ABSTRACT High‐resolution, rapid synchrotron x‐ray topography is used to study oxygen‐induced micr... more ABSTRACT High‐resolution, rapid synchrotron x‐ray topography is used to study oxygen‐induced microdefects and their spatial distribution in a large number of (100) n‐type silicon wafers, which had undergone different two‐stage thermal anneals. Section topographs reveal a 40–60‐μm‐thick defect‐free zone on the surface of a wafer annealed first at 800 °C for 20 h and then at 1150 °C for 4 h.
Journal of Applied Physics, 2013
ABSTRACT The modification of material characteristics by introducing dopant atoms into a crystal ... more ABSTRACT The modification of material characteristics by introducing dopant atoms into a crystal lattice is a fundamental basis for modern micro- and nanosystems technology. In this work, the uneven distribution of dopants is shown to have a remarkable effect on the residual stress and the consequent deformation of released, mechanical silicon structures. In particular, the focus is on segregation of initial dopants inside the bulk silicon which takes place in such fabrication processes as thermal oxidation. A theoretical model based on perceiving the dopant-induced change in Si crystal lattice parameter is developed. We experimentally investigate a series of silicon-on-insulator wafers, including samples with dopant types B, P, and Sb, and concentrations in the range from 1015 to 5 × 1019 atoms cm−3. Released cantilevers are fabricated as test structures and the residual stress is determined by measuring their final curvature. Experimental results are compared with the modelled values obtained utilizing the dopant profiles determined by secondary ion mass spectrometry and concentration distribution simulations. The use of lightly doped substrates or the selection of processes not modifying the underlying Si surface (e.g., plasma enhanced chemical vapour deposition PECVD or metal deposition) is shown to be an effective solution for minimizing the dopant redistribution-induced stress. Besides the scientific impact, knowledge of the stress generated by dopants is of great significance for industrial manufacturing of a wide range of micro- and nanomechanical systems.
DST-J Bras Doencas Sex …, 2005
... Frente a un pH elevado, la paciente puede padecer una VB, pero también el incremento del pH p... more ... Frente a un pH elevado, la paciente puede padecer una VB, pero también el incremento del pH puede deberse a la presencia de otras infecciónes (ej.:T. vaginalis), colonización vaginal(ej ... 5. Goldenberg RL, Thom E, Moawad AH, Johnson F, Roberts J, Caritis SN. ...
American Journal of Medical Genetics, 1998
Nonsyndromic cleft lip with or without cleft palate (CL/P) is a common congenital malformation af... more Nonsyndromic cleft lip with or without cleft palate (CL/P) is a common congenital malformation affecting about 1/1,000 caucasian infants. Although the familial clustering of CL/P has been studied thoroughly, estimation of recurrence risk for genetic counseling purposes can be difficult. A survey was mailed to 912 board-certified genetic counselors, 542 non-board-certified genetic counselors, and 776 board-certified clinical geneticists to investigate the recurrence risks they would assign to three example families with CL/P. Responses were received from 155 (17%) board-certified genetic counselors, 36 (6.6%) non-board-certified genetic counselors, and 100 (18.5%) board-certified clinical geneticists. No major differences were found in their responses, suggesting that for these three families, geneticists would provide similar estimates of risk, regardless of their amount of experience with oral clefts patients, where they are currently employed, or their board certification status.
Anticancer research
The purpose of the study was to evalutate the feasibility of irinotecan drug-eluting beads (DC Be... more The purpose of the study was to evalutate the feasibility of irinotecan drug-eluting beads (DC Bead) administered as trans-arterial chemoembolization (TACE) in patients with liver metastases from colorectal cancer (CRC). Ten patients with liver metastases from CRC were treated with TACE adopting irinotecan-eluting beads at a dose of 100 mg every 3 weeks. Computed Tomography (CT) was performed 24h before and after TACE. TACE with irinotecan eluting beads was found to be feasible and well-tolerated. Right upper quadrant pain (RUQP) lasting 4 days (range 2-7) was reported by all the patients. After 30 days, a reduction >50% of CEA levels and of the lesional contrast enhancement was observed in all the patients. Irinotecan drug-eluting beads administered as TACE were shown to be active and safe in patients with liver metastases from CRC.