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Papers by Tron Arne Nilsen

arXiv (Cornell University), Feb 9, 2024

A novel ridge-waveguide quantum-dot superluminescent diode is reported. The multisection configur... more A novel ridge-waveguide quantum-dot superluminescent diode is reported. The multisection configuration enables the simultaneous realization of ultrawide 3-dB bandwidth (150 nm) and an output power greater than 1 mW.

IEEE Photonic Society 24th Annual Meeting, 2011

ABSTRACT By characterizing the light emission from reconfigurable edge-emitting devices, measured... more ABSTRACT By characterizing the light emission from reconfigurable edge-emitting devices, measured gain and spontaneous emission data are fed into a theoretical model to predict the spectral shape of quantum dot superluminescent LEDs.

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, 2006

Semiconductor Science and Technology, 2012

By characterizing the light emission from a multi-section reconfigurable quantum dot (QD) edge-em... more By characterizing the light emission from a multi-section reconfigurable quantum dot (QD) edge-emitting LED, measured gain and unamplified spontaneous emission characteristics pertaining to the underlying gain material can be determined. This data can then be inserted into a set of equations capable of reproducing the spectral emission when the device is configured as a superluminescent diode (SLD). The accuracy of

Journal of Crystal Growth, 2011

ABSTRACT Temperature dependent X-ray diffraction measurements were performed on two samples with ... more ABSTRACT Temperature dependent X-ray diffraction measurements were performed on two samples with AlSb epilayers of differing thickness grown on GaSb by molecular beam epitaxy to determine the temperature dependence of the lattice constant (aAlSb) and the Poisson ratio of AlSb between 32 and 546°C. At 32°C, aAlSb was found to be 6.1361Å, which is in good agreement with previous work. At higher temperatures, it differed significantly from the linear extrapolation of previously published values (below 67°C). A polynomial was fitted to the results: aAlSb=6.1353+2.85×10−5T+6.11×10−9T2(Å). The Poisson ratio was found to be approximately constant up to 300°C while decreasing above.

IEEE Photonics Technology Letters, 2007

A novel ridge-waveguide quantum-dot superluminescent diode is reported. The multisection configur... more A novel ridge-waveguide quantum-dot superluminescent diode is reported. The multisection configuration enables the simultaneous realization of ultrawide 3-dB bandwidth (>150 nm) and an output power greater than 1 mW

MRS Proceedings, 2005

ABSTRACTPhotonic crystal structures defined by interferometric lithography were etched into GaSb ... more ABSTRACTPhotonic crystal structures defined by interferometric lithography were etched into GaSb and AlGaAsSb with 90% Al content using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE) with BCl3 and BCl3/Ar gas mixture. Effects of DC bias, hole diameter, etch time and gas composition, on the etch rate of GaSb were investigated. Hardened photoresist (PR) was used as an etch mask for the experiments.

physica status solidi (b), 2009

The understanding of self–assembly and bonding mechanisms of organic molecules on semiconductor s... more The understanding of self–assembly and bonding mechanisms of organic molecules on semiconductor surfaces represents a central research aspect in the investigation of novel organic/inorganic interfaces and their technological applicability. Here, we investigated the adsorption and bond formation of cyclopentene and 1,4‐cyclohexadiene on a GaAs(001)‐ c(4 × 4) surface in order to clarify the influence of the number of intra‐molecular C=C double bonds on the respective adsorption sites. For a determination of the adsorption configuration, the interfaces were characterized electronically and optically by synchrotron based X‐ray photoelectron spectroscopy (SXPS), low energy electron diffraction (LEED) and reflectance anisotropy spectroscopy (RAS). The results reveal significantly different adsorption configurations for the two molecules. While cyclopentene bonds with a single covalent bond to the surface, 1,4‐cyclohexadiene adsorbs onto the surface by the formation of multiple covalent bo...

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2010

X-ray diffraction measurements were performed using a modified zone technique on Te-doped GaSb wa... more X-ray diffraction measurements were performed using a modified zone technique on Te-doped GaSb wafers, commonly used for molecular beam epitaxial growth, at temperatures between 32 and 546 °C to determine the thermal expansion. The authors found the thermal expansion to be very close to the data published by Bublik et al. [Phys. Status Solidi A 73, K271 (1982)]. Control measurements of the lattice constant of Si were found to agree with the results published by Okada and Tokumaru [J. Appl. Phys. 56, 314 (1984)] within our measurement error of ±2×10−4 Å. A fourth order polynomial, a(GaSb)(T)=6.0959+3.37×10−5T+5.63×10−8T2−1.29×10−10T3+1.05×10−13T4 (Å) (T in °C), was found to be a good fit to our data, while a linear fit with a constant thermal expansion coefficient of 7.17×10−6 K−1 was found to be a poorer fit.

Journal of Crystal Growth, 2009

Several Ga 1-x In x Sb layers, capped with 1 μm of GaSb, were grown on GaSb(001) substrates by mo... more Several Ga 1-x In x Sb layers, capped with 1 μm of GaSb, were grown on GaSb(001) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate rotation, or a tilted sample position with no substrate rotation. The GaInSb layers were examined by X-ray diffraction (XRD) using both symmetrical and asymmetrical reflections. The "tilted sample method" gave a variation of ± 25 % in thickness of the Ga 1-x In x Sb layers, while the In content varied by ± 10 % around the nominal value. The disappearance of thickness fringes in 004 XRD scans was used to determine the onset of relaxation, as determining the in-plane lattice constant for tilted samples was found to be difficult. Determining residual strain in samples grown by the tilted method was likewise found to be very difficult. The critical thickness for several In mole fractions between 5 % and 19 % was determined and was found to be from 2.1 to 2.6 times higher than predicted by Matthews and Blakeslee (1974) but lower than predicted by People and Bean (1985).

Journal of Crystal Growth, 2013

Using temperature dependent X-ray diffraction on two InSb single crystalline substrates, the bulk... more Using temperature dependent X-ray diffraction on two InSb single crystalline substrates, the bulk lattice constant of InSb was determined between 32 and 325 1C. A polynomial function was fitted to the data: aðTÞ ¼ 6:4791 þ 3:28 Â 10 À5 Â T þ 1:02 Â 10 À8 Â T 2 Å (T in 1C), which gives slightly higher values than previously published (which go up to 62 1C). From the fit, the thermal expansion of InSb was calculated to be αðTÞ ¼ 5:062 Â 10 À6 þ 3:15 Â 10 À9 Â T K À1 (T in 1C). We found that the thermal expansion coefficient is higher than previously published values above 100 1C (more than 10% higher at 325 1C).

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2010

Using x-ray diffraction, the in-plane and out-of-plane lattice constants of Al0.90Ga0.10AsySb1−y ... more Using x-ray diffraction, the in-plane and out-of-plane lattice constants of Al0.90Ga0.10AsySb1−y epilayers grown on GaSb and GaAs substrates were determined between 30 and 398 °C for y=0.003–0.059. The bulk lattice constant was then calculated from the in-plane and out-of-plane lattice constants. A polynomial function for the bulk lattice constant as a function of y and temperature was derived from a fit to the resulting data. Comparison to measured out-of-plane lattice constants of platinum-coated Al0.90Ga0.10AsySb1−y indicates that the polynomial function is valid up to around 550 °C. The polynomial function can be used to determine the lattice matching of Al0.90Ga0.10AsySb1−y to, e.g., GaSb at typical growth temperatures used for growth of cladding layers in laser structures. A formula is given for calculating the As mole fraction for lattice matching to GaSb at a given temperature.

arXiv (Cornell University), Feb 9, 2024

A novel ridge-waveguide quantum-dot superluminescent diode is reported. The multisection configur... more A novel ridge-waveguide quantum-dot superluminescent diode is reported. The multisection configuration enables the simultaneous realization of ultrawide 3-dB bandwidth (150 nm) and an output power greater than 1 mW.

IEEE Photonic Society 24th Annual Meeting, 2011

ABSTRACT By characterizing the light emission from reconfigurable edge-emitting devices, measured... more ABSTRACT By characterizing the light emission from reconfigurable edge-emitting devices, measured gain and spontaneous emission data are fed into a theoretical model to predict the spectral shape of quantum dot superluminescent LEDs.

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, 2006

Semiconductor Science and Technology, 2012

By characterizing the light emission from a multi-section reconfigurable quantum dot (QD) edge-em... more By characterizing the light emission from a multi-section reconfigurable quantum dot (QD) edge-emitting LED, measured gain and unamplified spontaneous emission characteristics pertaining to the underlying gain material can be determined. This data can then be inserted into a set of equations capable of reproducing the spectral emission when the device is configured as a superluminescent diode (SLD). The accuracy of

Journal of Crystal Growth, 2011

ABSTRACT Temperature dependent X-ray diffraction measurements were performed on two samples with ... more ABSTRACT Temperature dependent X-ray diffraction measurements were performed on two samples with AlSb epilayers of differing thickness grown on GaSb by molecular beam epitaxy to determine the temperature dependence of the lattice constant (aAlSb) and the Poisson ratio of AlSb between 32 and 546°C. At 32°C, aAlSb was found to be 6.1361Å, which is in good agreement with previous work. At higher temperatures, it differed significantly from the linear extrapolation of previously published values (below 67°C). A polynomial was fitted to the results: aAlSb=6.1353+2.85×10−5T+6.11×10−9T2(Å). The Poisson ratio was found to be approximately constant up to 300°C while decreasing above.

IEEE Photonics Technology Letters, 2007

A novel ridge-waveguide quantum-dot superluminescent diode is reported. The multisection configur... more A novel ridge-waveguide quantum-dot superluminescent diode is reported. The multisection configuration enables the simultaneous realization of ultrawide 3-dB bandwidth (>150 nm) and an output power greater than 1 mW

MRS Proceedings, 2005

ABSTRACTPhotonic crystal structures defined by interferometric lithography were etched into GaSb ... more ABSTRACTPhotonic crystal structures defined by interferometric lithography were etched into GaSb and AlGaAsSb with 90% Al content using Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE) with BCl3 and BCl3/Ar gas mixture. Effects of DC bias, hole diameter, etch time and gas composition, on the etch rate of GaSb were investigated. Hardened photoresist (PR) was used as an etch mask for the experiments.

physica status solidi (b), 2009

The understanding of self–assembly and bonding mechanisms of organic molecules on semiconductor s... more The understanding of self–assembly and bonding mechanisms of organic molecules on semiconductor surfaces represents a central research aspect in the investigation of novel organic/inorganic interfaces and their technological applicability. Here, we investigated the adsorption and bond formation of cyclopentene and 1,4‐cyclohexadiene on a GaAs(001)‐ c(4 × 4) surface in order to clarify the influence of the number of intra‐molecular C=C double bonds on the respective adsorption sites. For a determination of the adsorption configuration, the interfaces were characterized electronically and optically by synchrotron based X‐ray photoelectron spectroscopy (SXPS), low energy electron diffraction (LEED) and reflectance anisotropy spectroscopy (RAS). The results reveal significantly different adsorption configurations for the two molecules. While cyclopentene bonds with a single covalent bond to the surface, 1,4‐cyclohexadiene adsorbs onto the surface by the formation of multiple covalent bo...

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2010

X-ray diffraction measurements were performed using a modified zone technique on Te-doped GaSb wa... more X-ray diffraction measurements were performed using a modified zone technique on Te-doped GaSb wafers, commonly used for molecular beam epitaxial growth, at temperatures between 32 and 546 °C to determine the thermal expansion. The authors found the thermal expansion to be very close to the data published by Bublik et al. [Phys. Status Solidi A 73, K271 (1982)]. Control measurements of the lattice constant of Si were found to agree with the results published by Okada and Tokumaru [J. Appl. Phys. 56, 314 (1984)] within our measurement error of ±2×10−4 Å. A fourth order polynomial, a(GaSb)(T)=6.0959+3.37×10−5T+5.63×10−8T2−1.29×10−10T3+1.05×10−13T4 (Å) (T in °C), was found to be a good fit to our data, while a linear fit with a constant thermal expansion coefficient of 7.17×10−6 K−1 was found to be a poorer fit.

Journal of Crystal Growth, 2009

Several Ga 1-x In x Sb layers, capped with 1 μm of GaSb, were grown on GaSb(001) substrates by mo... more Several Ga 1-x In x Sb layers, capped with 1 μm of GaSb, were grown on GaSb(001) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate rotation, or a tilted sample position with no substrate rotation. The GaInSb layers were examined by X-ray diffraction (XRD) using both symmetrical and asymmetrical reflections. The "tilted sample method" gave a variation of ± 25 % in thickness of the Ga 1-x In x Sb layers, while the In content varied by ± 10 % around the nominal value. The disappearance of thickness fringes in 004 XRD scans was used to determine the onset of relaxation, as determining the in-plane lattice constant for tilted samples was found to be difficult. Determining residual strain in samples grown by the tilted method was likewise found to be very difficult. The critical thickness for several In mole fractions between 5 % and 19 % was determined and was found to be from 2.1 to 2.6 times higher than predicted by Matthews and Blakeslee (1974) but lower than predicted by People and Bean (1985).

Journal of Crystal Growth, 2013

Using temperature dependent X-ray diffraction on two InSb single crystalline substrates, the bulk... more Using temperature dependent X-ray diffraction on two InSb single crystalline substrates, the bulk lattice constant of InSb was determined between 32 and 325 1C. A polynomial function was fitted to the data: aðTÞ ¼ 6:4791 þ 3:28 Â 10 À5 Â T þ 1:02 Â 10 À8 Â T 2 Å (T in 1C), which gives slightly higher values than previously published (which go up to 62 1C). From the fit, the thermal expansion of InSb was calculated to be αðTÞ ¼ 5:062 Â 10 À6 þ 3:15 Â 10 À9 Â T K À1 (T in 1C). We found that the thermal expansion coefficient is higher than previously published values above 100 1C (more than 10% higher at 325 1C).

Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2010

Using x-ray diffraction, the in-plane and out-of-plane lattice constants of Al0.90Ga0.10AsySb1−y ... more Using x-ray diffraction, the in-plane and out-of-plane lattice constants of Al0.90Ga0.10AsySb1−y epilayers grown on GaSb and GaAs substrates were determined between 30 and 398 °C for y=0.003–0.059. The bulk lattice constant was then calculated from the in-plane and out-of-plane lattice constants. A polynomial function for the bulk lattice constant as a function of y and temperature was derived from a fit to the resulting data. Comparison to measured out-of-plane lattice constants of platinum-coated Al0.90Ga0.10AsySb1−y indicates that the polynomial function is valid up to around 550 °C. The polynomial function can be used to determine the lattice matching of Al0.90Ga0.10AsySb1−y to, e.g., GaSb at typical growth temperatures used for growth of cladding layers in laser structures. A formula is given for calculating the As mole fraction for lattice matching to GaSb at a given temperature.