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Papers by Valentin Teodorescu
Nanomaterials
Due to its physical and chemical properties, the n-type tungsten oxide (WO3) semiconductor is a s... more Due to its physical and chemical properties, the n-type tungsten oxide (WO3) semiconductor is a suitable photoanode for water decomposition reaction. The responses of the photoelectrochemical PEC water-splitting properties as an effect of structural and optical changes of WO3 thin films, as well as the nature of electrolyte solutions, were studied in this work. The WO3 thins films have been obtained by pulsed laser deposition (PLD) on silicon (Si(001)) covered with platinum substrates using three different laser wavelengths. As the XRD (X-ray diffraction) and XTEM (cross-section transmission electron microscopy) analysis shows, the formation of highly crystalline monocline WO3 phase is formed for the film deposited at 1064 nm wavelength and poor crystalline phases with a large ordering anisotropy, characteristic of 2D structures for the films deposited at 355 nm and 193 nm wavelengths, respectively. The photogenerated current densities Jph depend on the laser wavelength, in both alk...
Scripta Materialia, 2016
Abstract The strong correlation between morphology and charge storage properties of HfO 2 /Ge/HfO... more Abstract The strong correlation between morphology and charge storage properties of HfO 2 /Ge/HfO 2 /Si trilayer structures was evidenced. The morphology of structures deposited by magnetron sputtering and electron beam evaporation was tailored by rapid thermal annealing and investigated by transmission electron microscopy, Raman and X-ray photoelectron spectroscopies. The best hysteresis loops (capacitance–voltage characteristics) were obtained for trilayers with high density Ge nanocrystals located in the position of as-deposited Ge layer. The decrease of Ge nanocrystals density narrows the memory window, by spreading Ge atoms into HfO 2 matrix (sputtered trilayers), or by Ge atoms expulsion toward HfO 2 nanocrystals surface (evaporated trilayers).
Sensors and Actuators B: Chemical, 2015
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1999
... IN Mihailescu, Eniko Gyorgy, G. Marin, M. Popescu, VS Teodorescu, J. Van Landuyt, C. Grivas, ... more ... IN Mihailescu, Eniko Gyorgy, G. Marin, M. Popescu, VS Teodorescu, J. Van Landuyt, C. Grivas, A. Hatziapostolou. Abstract. ... Phys. 58, 1765 (1985). SI Anisimov, D. Bauerle, and BS Luk'yanchuk, Gas dynamics and film profiles in pulsed-laser deposition of materials, Phys. Rev. ...
Functional Nanostructured Interfaces for Environmental and Biomedical Applications
Revue Roumaine de Chimie
The thermal behavior of Cu-doped TiO2 gels obtained by the sol-gel method was investigated by the... more The thermal behavior of Cu-doped TiO2 gels obtained by the sol-gel method was investigated by thermogravimetric and differential thermal analysis (TG/DTG/DTA) and differential scanning calorimetry (DSC) measurements. The comparative investigation of the structure and morphology of the as-prepared gels and of the nanopowders obtained by annealing them was realized by transmission electron microscopy (TEM), Fourier transmission infrared spectroscopy (FTIR), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Significant differences were noticed depending on the amount of dopant (0.5 or 2.0 mol % CuO). A higher dopant concentration resulted in a more complex decomposition of the sample. This behavior was associated with the formation of various molecular species in the sol-gel solutions before gelation, determined by the different amount of the dopant used.
The Journal of Physical Chemistry C
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces
ACS Applied Nano Materials
Microporous and Mesoporous Materials
Crystal Engineering
In this work, we report on the interest of the rapid thermal annealing (RTA) for densification of... more In this work, we report on the interest of the rapid thermal annealing (RTA) for densification of sol-gel (SG) indium tin oxide (ITO) thin films. The crystalline structure of these ITO films was visualized by transmission electron microscopy (TEM) and corresponding electron diffraction pattern were compared with data from pure In 2 O 3. The average grain size, measured from TEM micrographs, ranges from 5 to 50 nm. The film densification was followed by Rutherford backscattering spectrometry coupled with cross-section TEM observations. A comparison with classical annealing is discussed.
Industrial Applications of Laser Technology
ABSTRACT
Journal of Hazardous Materials, 2017
Development of new sensitive materials by different synthesis routes in order to emphasize the se... more Development of new sensitive materials by different synthesis routes in order to emphasize the sensing properties for hazardous H2S detection is one of a nowadays challenge in the field of gas sensors. In this study we obtained mesoporous SnO2-CuWO4 with selective sensitivity to H2S by an inexpensive synthesis route with low environmental pollution level, using tripropylamine (TPA) as template and polyvinylpyrrolidone (PVP) as dispersant/stabilizer. In order to bring insights about the intrinsic properties, the powders were characterized by means of a variety of complementary techniques such as: X-Ray Diffraction, XRD; Transmission Electron Microscopy, TEM; High Resolution TEM, HRTEM; Raman Spectroscopy, RS; Porosity Analysis by N2 adsorption/desorption, BET; Scanning Electron Microscopy, SEM and X-ray Photoelectron Spectroscopy, XPS. The sensors were fabricated by powders deposition via screen-printing technique onto planar commercial Al2O3 substrates. The sensor signals towards H2S exposure at low operating temperature (100°C) reaches values from 10(5) (for SnWCu600) to 10(6) (for SnWCu800) over the full range of concentrations (5-30ppm). The recovery processes were induced by a short temperature trigger of 500°C. The selective sensitivity was underlined with respect to the H2S, relative to other potential pollutants and relative humidity (10-70% RH).
Journal of Applied Physics, Jun 30, 2001
Nanomaterials
Due to its physical and chemical properties, the n-type tungsten oxide (WO3) semiconductor is a s... more Due to its physical and chemical properties, the n-type tungsten oxide (WO3) semiconductor is a suitable photoanode for water decomposition reaction. The responses of the photoelectrochemical PEC water-splitting properties as an effect of structural and optical changes of WO3 thin films, as well as the nature of electrolyte solutions, were studied in this work. The WO3 thins films have been obtained by pulsed laser deposition (PLD) on silicon (Si(001)) covered with platinum substrates using three different laser wavelengths. As the XRD (X-ray diffraction) and XTEM (cross-section transmission electron microscopy) analysis shows, the formation of highly crystalline monocline WO3 phase is formed for the film deposited at 1064 nm wavelength and poor crystalline phases with a large ordering anisotropy, characteristic of 2D structures for the films deposited at 355 nm and 193 nm wavelengths, respectively. The photogenerated current densities Jph depend on the laser wavelength, in both alk...
Scripta Materialia, 2016
Abstract The strong correlation between morphology and charge storage properties of HfO 2 /Ge/HfO... more Abstract The strong correlation between morphology and charge storage properties of HfO 2 /Ge/HfO 2 /Si trilayer structures was evidenced. The morphology of structures deposited by magnetron sputtering and electron beam evaporation was tailored by rapid thermal annealing and investigated by transmission electron microscopy, Raman and X-ray photoelectron spectroscopies. The best hysteresis loops (capacitance–voltage characteristics) were obtained for trilayers with high density Ge nanocrystals located in the position of as-deposited Ge layer. The decrease of Ge nanocrystals density narrows the memory window, by spreading Ge atoms into HfO 2 matrix (sputtered trilayers), or by Ge atoms expulsion toward HfO 2 nanocrystals surface (evaporated trilayers).
Sensors and Actuators B: Chemical, 2015
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1999
... IN Mihailescu, Eniko Gyorgy, G. Marin, M. Popescu, VS Teodorescu, J. Van Landuyt, C. Grivas, ... more ... IN Mihailescu, Eniko Gyorgy, G. Marin, M. Popescu, VS Teodorescu, J. Van Landuyt, C. Grivas, A. Hatziapostolou. Abstract. ... Phys. 58, 1765 (1985). SI Anisimov, D. Bauerle, and BS Luk'yanchuk, Gas dynamics and film profiles in pulsed-laser deposition of materials, Phys. Rev. ...
Functional Nanostructured Interfaces for Environmental and Biomedical Applications
Revue Roumaine de Chimie
The thermal behavior of Cu-doped TiO2 gels obtained by the sol-gel method was investigated by the... more The thermal behavior of Cu-doped TiO2 gels obtained by the sol-gel method was investigated by thermogravimetric and differential thermal analysis (TG/DTG/DTA) and differential scanning calorimetry (DSC) measurements. The comparative investigation of the structure and morphology of the as-prepared gels and of the nanopowders obtained by annealing them was realized by transmission electron microscopy (TEM), Fourier transmission infrared spectroscopy (FTIR), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Significant differences were noticed depending on the amount of dopant (0.5 or 2.0 mol % CuO). A higher dopant concentration resulted in a more complex decomposition of the sample. This behavior was associated with the formation of various molecular species in the sol-gel solutions before gelation, determined by the different amount of the dopant used.
The Journal of Physical Chemistry C
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces
ACS Applied Nano Materials
Microporous and Mesoporous Materials
Crystal Engineering
In this work, we report on the interest of the rapid thermal annealing (RTA) for densification of... more In this work, we report on the interest of the rapid thermal annealing (RTA) for densification of sol-gel (SG) indium tin oxide (ITO) thin films. The crystalline structure of these ITO films was visualized by transmission electron microscopy (TEM) and corresponding electron diffraction pattern were compared with data from pure In 2 O 3. The average grain size, measured from TEM micrographs, ranges from 5 to 50 nm. The film densification was followed by Rutherford backscattering spectrometry coupled with cross-section TEM observations. A comparison with classical annealing is discussed.
Industrial Applications of Laser Technology
ABSTRACT
Journal of Hazardous Materials, 2017
Development of new sensitive materials by different synthesis routes in order to emphasize the se... more Development of new sensitive materials by different synthesis routes in order to emphasize the sensing properties for hazardous H2S detection is one of a nowadays challenge in the field of gas sensors. In this study we obtained mesoporous SnO2-CuWO4 with selective sensitivity to H2S by an inexpensive synthesis route with low environmental pollution level, using tripropylamine (TPA) as template and polyvinylpyrrolidone (PVP) as dispersant/stabilizer. In order to bring insights about the intrinsic properties, the powders were characterized by means of a variety of complementary techniques such as: X-Ray Diffraction, XRD; Transmission Electron Microscopy, TEM; High Resolution TEM, HRTEM; Raman Spectroscopy, RS; Porosity Analysis by N2 adsorption/desorption, BET; Scanning Electron Microscopy, SEM and X-ray Photoelectron Spectroscopy, XPS. The sensors were fabricated by powders deposition via screen-printing technique onto planar commercial Al2O3 substrates. The sensor signals towards H2S exposure at low operating temperature (100°C) reaches values from 10(5) (for SnWCu600) to 10(6) (for SnWCu800) over the full range of concentrations (5-30ppm). The recovery processes were induced by a short temperature trigger of 500°C. The selective sensitivity was underlined with respect to the H2S, relative to other potential pollutants and relative humidity (10-70% RH).
Journal of Applied Physics, Jun 30, 2001