Valery Tolstikhin - Academia.edu (original) (raw)

Papers by Valery Tolstikhin

Integrated Photonics Research, 1999

Waveguide devices made up fi-om multi-layer III-V semiconductor heterostructures are the very bas... more Waveguide devices made up fi-om multi-layer III-V semiconductor heterostructures are the very basic elements of integrated photonics.

Journal of Applied Physics, 1997

Competition between carrier concentration and effective temperature effects on the dielectric fun... more Competition between carrier concentration and effective temperature effects on the dielectric function of a degenerate semiconductor in a spectral range near its fundamental absorption edge is suggested as a mechanism for regenerative pulsations in a stationary pumped optical etalon. The origin of self-pulsations is similar to that in a bistable etalon with competing concentration and thermal optical nonlinearities, but, due to its purely electronic nature, the proposed mechanism provides a way for a much higher repetition frequency, probably in the GHz range. The model of the phenomenon and modeling examples are all related to a Fabry–Perot resonator filled with the bulk n+-In0.53Ga0.47As as an active medium.

Journal of Applied Physics, 1995

ABSTRACT

Journal of Applied Physics, 2000

Intervalence band absorption spectra of InP and related materials over a range of temperatures ar... more Intervalence band absorption spectra of InP and related materials over a range of temperatures are calculated using different methods for band structure. It is shown that band structure models which neglect valence band intermixing effects, such as the Kane model, fail to provide ...

IEEE Journal of Selected Topics in Quantum Electronics, 2002

IEEE Journal of Quantum Electronics, 1995

The fully self-contained model of a laser diode (LD) under the carrier heating conditions based o... more The fully self-contained model of a laser diode (LD) under the carrier heating conditions based on the description of a nonequilibrium carrier-phonon-photon system excited by an injection in a P-1-N double heterostructure @I%) is presented. It combines the microscopic approach to the lightcarrier interaction with the macroscopic treatment of the device characteristics and does not for example involve any empirical formulation of nonlinear gain. This model is used to investigate the carrier heating effects in the CW operation, small-signal modulation response and nonlinear picosecond (ps) dynamics of a single-frequency GaInAsP-InP laser. The carrier heating induced suppression of the material gain and enhancement of the intracavity losses are shown to be important for all operational modes. In the CW performance, these effects are found to cause the saturation of lasing and blue shift of the generation wavelength. In the high-frequency response, they are established to ensure an additional mechanism of dynamical carrier-photon coupling and therefore m d i y the modulation behavior of an LD. For nonlinear dynamics, the carrier heating induced perturbation of the gain and losses are shown to lead to deep pulse modulation on a ps timescale. AU the numerical estimations and modeling examples are given for 1.55 pm distributed feedback (DFB) laser operating at mom temperature. It is concluded that carrier heating effects are unwelcome phenomena for CW operation, but they can be engaged to improve the modulation behavior of an LD. AL bandgap narrowing [8]-[lo], and so the carrier heating effects have to be especially significant in the long-wavelength GaInAsP-InP lasers. Carrier heating influence on lasing is frequently described in terms of nonlinear gain [11]-[13], when the mode gain coefficient at a frequency w is written as T~ = Tw,$h(Ne)(l-awNw) [111, [I21 or ^lw = Tu,th(Ne)/(l-k CwNw) [I319 Manuscript

Electronics Letters, 2005

A practical approach for the design and manufacture of a monolithically integrated, multiple wave... more A practical approach for the design and manufacture of a monolithically integrated, multiple wavelength data receiver is presented. It utilises an InP-based, birefringence compensated echelle grating demultiplexer and high speed, singlemode, vertically integrated waveguide photodiodes. As an example of this approach, a 32-channel, C-band, polarisation independent data receiver chip operating at OC-3 (155 Mbit/s) bit rate is demonstrated with a compact footprint of 5/spl times/16 mm.

… Research, Silicon and …, 2011

... Fang Wu, Valery Tolstikhin, Yury Logvin, and Chris Brooks OneChip Photonics Inc., 495 March R... more ... Fang Wu, Valery Tolstikhin, Yury Logvin, and Chris Brooks OneChip Photonics Inc., 495 March Road, Suite 200, Ottawa, Ontario, Canada K2K 3G1 fang.wu@onechipphotonics.com ... ITuC3.pdf OSA/ANIC/IPR/Sensors/SL/SOF/SPPCom/2011 Page 2. Fig. ...

… (NUSOD), 2010 10th …, 2010

A model to analyze longitudinal mode selection in high-order laterally coupled DFB lasers is deve... more A model to analyze longitudinal mode selection in high-order laterally coupled DFB lasers is developed and used to verify an ability to control the complex coupling resulting in a single-frequency lasing by manipulating the grating shape.

Indium Phosphide & …, 2009

An integrated optically pre-amplified photodetector, featuring waveguide gain and absorption sect... more An integrated optically pre-amplified photodetector, featuring waveguide gain and absorption sections defined on the same active waveguide layers atop a common passive waveguide, is reported. The device demonstrates high responsivity while exhibiting little ...

Integrated Photonics …, 2010

Multi-guide vertical integration (MGVI) is a generic and versatile photonic integrated circuit (P... more Multi-guide vertical integration (MGVI) is a generic and versatile photonic integrated circuit (PIC) technology, which, unlike most of its counterparts, is implementable in one-step epitaxial growth process, eg on an InP substrate [1]. In essence, MGVI is a generalization of a twin-...

… , 2008. MNRC 2008 …, 2008

... Another other application can be for modulating the upstream data in the optical network unit... more ... Another other application can be for modulating the upstream data in the optical network unit (ONU) in the PON (colorless ONU). II. ... 82-83, Sep. 1990. [5] P. Koonath, S. Kim, W. Jo Cho and A. Gopinath, “Polarization-insensitive quantum-well semiconductor optical amplifiers ...

Journal of Applied Physics, 2000

Intervalence band absorption spectra of InP and related materials over a range of temperatures ar... more Intervalence band absorption spectra of InP and related materials over a range of temperatures are calculated using different methods for band structure. It is shown that band structure models which neglect valence band intermixing effects, such as the Kane model, fail to provide ...

Applied Physics Letters, 1998

Applied Physics Letters, 1996

The mechanisms of injection in the recently proposed three‐terminal laser structures and the abil... more The mechanisms of injection in the recently proposed three‐terminal laser structures and the ability to effectively tune the energy yield associated with a single injected electron are analyzed, by means of the ensemble Monte Carlo simulations, with respect to a high‐speed modulation using dynamic carrier heating.

Applied Physics Letters, 1995

DOI to the publisher's website. • The final author version and the galley proof are versions of t... more DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement:

Applied Physics Letters, 1995

ABSTRACT

This paper reports the design of InP-based monolithic photonic integrated circuits for performanc... more This paper reports the design of InP-based monolithic photonic integrated circuits for performance surveillance and bandwidth management in DWDM transmission systems. It is based on a building block approach, which allows a large variety of optical components to be built from a few monolithically integrable elements, by using only one-step epitaxial growth and standard semiconductor fabrication technologies. These include: (i)

ABSTRACT Two-step lateral tapering is proposed as a means for waveguide mode shaping for improved... more ABSTRACT Two-step lateral tapering is proposed as a means for waveguide mode shaping for improved fiber coupling without compromising the waveguide design. Using this technique, on-chip spot-size converters integrated with shallow etched InP-based waveguides are reported.

ABSTRACT Spot-size converters (SSC) are an important building block of InP-based photonic integra... more ABSTRACT Spot-size converters (SSC) are an important building block of InP-based photonic integrated circuits since it allows a standard single-mode fiber with a large and symmetric mode spot to be efficiently coupled with large displacement tolerance to a semiconductor waveguide with a small and asymmetric mode spot. Having an on-chip SSC is practically advantageous since such an element greatly simplifies the packaging process while increasing its reliability. In this paper, a SSC utilizing two-step lateral tapering is proposed for converting the semiconductor waveguide device mode into that suitable for fiber coupling without compromising the designs of the device and coupling waveguides. This is achieved by inserting a transient taper between the device and coupling waveguide as an impedance matcher. This paper describes the design principles and characterization results for such a two-step SSC, compatible with earlier reported InP-based photonic integrated circuits for WDM. Transmission and photoresponsivity measurements (the last - by using an on-chip waveguide photodetector monolithically integrated with the SSC) show excellent performance of the two-step SSC. In good agreement with simulations, it was experimentally demonstrated that using this integrated component for fiber coupling can reduce the coupling loss to below 1dB and the alignment tolerances are improved by two and three times on the horizontal and vertical directions, respectively.

Integrated Photonics Research, 1999

Waveguide devices made up fi-om multi-layer III-V semiconductor heterostructures are the very bas... more Waveguide devices made up fi-om multi-layer III-V semiconductor heterostructures are the very basic elements of integrated photonics.

Journal of Applied Physics, 1997

Competition between carrier concentration and effective temperature effects on the dielectric fun... more Competition between carrier concentration and effective temperature effects on the dielectric function of a degenerate semiconductor in a spectral range near its fundamental absorption edge is suggested as a mechanism for regenerative pulsations in a stationary pumped optical etalon. The origin of self-pulsations is similar to that in a bistable etalon with competing concentration and thermal optical nonlinearities, but, due to its purely electronic nature, the proposed mechanism provides a way for a much higher repetition frequency, probably in the GHz range. The model of the phenomenon and modeling examples are all related to a Fabry–Perot resonator filled with the bulk n+-In0.53Ga0.47As as an active medium.

Journal of Applied Physics, 1995

ABSTRACT

Journal of Applied Physics, 2000

Intervalence band absorption spectra of InP and related materials over a range of temperatures ar... more Intervalence band absorption spectra of InP and related materials over a range of temperatures are calculated using different methods for band structure. It is shown that band structure models which neglect valence band intermixing effects, such as the Kane model, fail to provide ...

IEEE Journal of Selected Topics in Quantum Electronics, 2002

IEEE Journal of Quantum Electronics, 1995

The fully self-contained model of a laser diode (LD) under the carrier heating conditions based o... more The fully self-contained model of a laser diode (LD) under the carrier heating conditions based on the description of a nonequilibrium carrier-phonon-photon system excited by an injection in a P-1-N double heterostructure @I%) is presented. It combines the microscopic approach to the lightcarrier interaction with the macroscopic treatment of the device characteristics and does not for example involve any empirical formulation of nonlinear gain. This model is used to investigate the carrier heating effects in the CW operation, small-signal modulation response and nonlinear picosecond (ps) dynamics of a single-frequency GaInAsP-InP laser. The carrier heating induced suppression of the material gain and enhancement of the intracavity losses are shown to be important for all operational modes. In the CW performance, these effects are found to cause the saturation of lasing and blue shift of the generation wavelength. In the high-frequency response, they are established to ensure an additional mechanism of dynamical carrier-photon coupling and therefore m d i y the modulation behavior of an LD. For nonlinear dynamics, the carrier heating induced perturbation of the gain and losses are shown to lead to deep pulse modulation on a ps timescale. AU the numerical estimations and modeling examples are given for 1.55 pm distributed feedback (DFB) laser operating at mom temperature. It is concluded that carrier heating effects are unwelcome phenomena for CW operation, but they can be engaged to improve the modulation behavior of an LD. AL bandgap narrowing [8]-[lo], and so the carrier heating effects have to be especially significant in the long-wavelength GaInAsP-InP lasers. Carrier heating influence on lasing is frequently described in terms of nonlinear gain [11]-[13], when the mode gain coefficient at a frequency w is written as T~ = Tw,$h(Ne)(l-awNw) [111, [I21 or ^lw = Tu,th(Ne)/(l-k CwNw) [I319 Manuscript

Electronics Letters, 2005

A practical approach for the design and manufacture of a monolithically integrated, multiple wave... more A practical approach for the design and manufacture of a monolithically integrated, multiple wavelength data receiver is presented. It utilises an InP-based, birefringence compensated echelle grating demultiplexer and high speed, singlemode, vertically integrated waveguide photodiodes. As an example of this approach, a 32-channel, C-band, polarisation independent data receiver chip operating at OC-3 (155 Mbit/s) bit rate is demonstrated with a compact footprint of 5/spl times/16 mm.

… Research, Silicon and …, 2011

... Fang Wu, Valery Tolstikhin, Yury Logvin, and Chris Brooks OneChip Photonics Inc., 495 March R... more ... Fang Wu, Valery Tolstikhin, Yury Logvin, and Chris Brooks OneChip Photonics Inc., 495 March Road, Suite 200, Ottawa, Ontario, Canada K2K 3G1 fang.wu@onechipphotonics.com ... ITuC3.pdf OSA/ANIC/IPR/Sensors/SL/SOF/SPPCom/2011 Page 2. Fig. ...

… (NUSOD), 2010 10th …, 2010

A model to analyze longitudinal mode selection in high-order laterally coupled DFB lasers is deve... more A model to analyze longitudinal mode selection in high-order laterally coupled DFB lasers is developed and used to verify an ability to control the complex coupling resulting in a single-frequency lasing by manipulating the grating shape.

Indium Phosphide & …, 2009

An integrated optically pre-amplified photodetector, featuring waveguide gain and absorption sect... more An integrated optically pre-amplified photodetector, featuring waveguide gain and absorption sections defined on the same active waveguide layers atop a common passive waveguide, is reported. The device demonstrates high responsivity while exhibiting little ...

Integrated Photonics …, 2010

Multi-guide vertical integration (MGVI) is a generic and versatile photonic integrated circuit (P... more Multi-guide vertical integration (MGVI) is a generic and versatile photonic integrated circuit (PIC) technology, which, unlike most of its counterparts, is implementable in one-step epitaxial growth process, eg on an InP substrate [1]. In essence, MGVI is a generalization of a twin-...

… , 2008. MNRC 2008 …, 2008

... Another other application can be for modulating the upstream data in the optical network unit... more ... Another other application can be for modulating the upstream data in the optical network unit (ONU) in the PON (colorless ONU). II. ... 82-83, Sep. 1990. [5] P. Koonath, S. Kim, W. Jo Cho and A. Gopinath, “Polarization-insensitive quantum-well semiconductor optical amplifiers ...

Journal of Applied Physics, 2000

Intervalence band absorption spectra of InP and related materials over a range of temperatures ar... more Intervalence band absorption spectra of InP and related materials over a range of temperatures are calculated using different methods for band structure. It is shown that band structure models which neglect valence band intermixing effects, such as the Kane model, fail to provide ...

Applied Physics Letters, 1998

Applied Physics Letters, 1996

The mechanisms of injection in the recently proposed three‐terminal laser structures and the abil... more The mechanisms of injection in the recently proposed three‐terminal laser structures and the ability to effectively tune the energy yield associated with a single injected electron are analyzed, by means of the ensemble Monte Carlo simulations, with respect to a high‐speed modulation using dynamic carrier heating.

Applied Physics Letters, 1995

DOI to the publisher's website. • The final author version and the galley proof are versions of t... more DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement:

Applied Physics Letters, 1995

ABSTRACT

This paper reports the design of InP-based monolithic photonic integrated circuits for performanc... more This paper reports the design of InP-based monolithic photonic integrated circuits for performance surveillance and bandwidth management in DWDM transmission systems. It is based on a building block approach, which allows a large variety of optical components to be built from a few monolithically integrable elements, by using only one-step epitaxial growth and standard semiconductor fabrication technologies. These include: (i)

ABSTRACT Two-step lateral tapering is proposed as a means for waveguide mode shaping for improved... more ABSTRACT Two-step lateral tapering is proposed as a means for waveguide mode shaping for improved fiber coupling without compromising the waveguide design. Using this technique, on-chip spot-size converters integrated with shallow etched InP-based waveguides are reported.

ABSTRACT Spot-size converters (SSC) are an important building block of InP-based photonic integra... more ABSTRACT Spot-size converters (SSC) are an important building block of InP-based photonic integrated circuits since it allows a standard single-mode fiber with a large and symmetric mode spot to be efficiently coupled with large displacement tolerance to a semiconductor waveguide with a small and asymmetric mode spot. Having an on-chip SSC is practically advantageous since such an element greatly simplifies the packaging process while increasing its reliability. In this paper, a SSC utilizing two-step lateral tapering is proposed for converting the semiconductor waveguide device mode into that suitable for fiber coupling without compromising the designs of the device and coupling waveguides. This is achieved by inserting a transient taper between the device and coupling waveguide as an impedance matcher. This paper describes the design principles and characterization results for such a two-step SSC, compatible with earlier reported InP-based photonic integrated circuits for WDM. Transmission and photoresponsivity measurements (the last - by using an on-chip waveguide photodetector monolithically integrated with the SSC) show excellent performance of the two-step SSC. In good agreement with simulations, it was experimentally demonstrated that using this integrated component for fiber coupling can reduce the coupling loss to below 1dB and the alignment tolerances are improved by two and three times on the horizontal and vertical directions, respectively.