Mingjun Wang - Academia.edu (original) (raw)
Uploads
Papers by Mingjun Wang
International Journal of Modern Nonlinear Theory and Application, 2014
Modern Physics Letters B, 2008
With the occasional feedback method, the chaotic logistic map is stabilized at an unstable low-pe... more With the occasional feedback method, the chaotic logistic map is stabilized at an unstable low-periodic orbit. In our method, the qualified feedback coefficient can be obtained through calculation instead of through simulation. Besides, the bifurcation control of the logistic map is studied, and a new scheme is proposed to change the parameter value of any one bifurcation point of this
Modern Physics Letters B, 2009
International Journal of Modern Physics B, 2011
Diamond and Related Materials, 2009
Patterned carbon nanotube (CNT) arrays on Si substrate have been fabricated by using a two layer ... more Patterned carbon nanotube (CNT) arrays on Si substrate have been fabricated by using a two layer Sn/Ni catalyst in a diffusion ethanol flame. Vertically well-aligned CNT arrays were achieved on a Si substrate without any catalyst pretreatment. The Sn underlayer activated the substrates for CNT growth with Ni as catalyst, and provided a good contact between CNTs and the substrate, which is useful for field emission. Since the adhesion of Sn/Ni nanoparticles to the substrate is very strong, the growth of the CNTs follows a base-growth mode. The thickness of the Sn underlayer largely determines the diameter and diameter distribution of the as-grown CNTs. The morphologies and field electron emission properties of CNT arrays grown on Si substrates with different thicknesses of Sn and growth times have been investigated. The variation of emission current density was less than 5% during a 4h test under a field of 1.77V/µm.
Communications in Nonlinear Science and Numerical Simulation, 2011
Communications in Nonlinear Science and Numerical Simulation, 2011
Applied Physics Letters, 2011
ABSTRACT We fabricate an ultraviolet (UV)/orange bicolor light emitting diode (LED) based on an n... more ABSTRACT We fabricate an ultraviolet (UV)/orange bicolor light emitting diode (LED) based on an n-ZnO/n-GaN isotype heterojunction, which presents a sharp ultraviolet emission centered at 367 nm and a broad orange emission centered at 640 nm under forward and reverse biases, respectively. Time dependence electroluminescence (EL) measurements reveal that this device shows good stability. The electroluminescence mechanism of the bicolor light emitting diode is discussed in terms of the material properties of the interfacial layer and the luminescence properties of the device in this work.
Applied Physics Letters, 2009
N-ZnO nanorods/n-silicon heterojunction was fabricated by growth of ZnO nanorods on a n-type sili... more N-ZnO nanorods/n-silicon heterojunction was fabricated by growth of ZnO nanorods on a n-type silicon (111) wafer with a low-temperature aqueous solution method. Capacitance-voltage measurements revealed that after annealing at 900 °C in O2 ambient for 1 h, the heterojunction changed from abrupt N-ZnO nanorods/n-silicon to graded P-ZnO/n-silicon junction. The annealed diode showed good photoresponse in both the ultraviolet and visible
Applied Surface Science, 2008
Nickel oxide thin films were deposited on fused silica and Si(1 0 0) substrates at different subs... more Nickel oxide thin films were deposited on fused silica and Si(1 0 0) substrates at different substrate temperatures ranging from room temperature to 400 °C using radio frequency reactive magnetron sputtering from a Ni metal target in a mixture of O2 and Ar. With the increase of substrate temperature, nickel oxide films deposited on the Si substrates exhibit transition from amorphous to poly-crystalline structures with different preferred orientations of NiO(2 0 0) and (1 1 1). The films deposited at higher temperature exhibit higher Ni2+/Ni3+ ratio. With substrate temperature increasing from room temperature to 400 °C, the electrical resistivities of nickel oxide films increase from (2.8 ± 0.1) × 10−2 to (8.7 ± 0.1) Ω cm, and the optical band-gap energies increase from 3.65 to 3.88 eV. A p-nickel oxide/n-zinc oxide heterojunction was fabricated to confirm the p-type conduction of nickel oxide thin film, which exhibited a steadily rectifying behavior.
International Journal of Modern Nonlinear Theory and Application, 2014
Modern Physics Letters B, 2008
With the occasional feedback method, the chaotic logistic map is stabilized at an unstable low-pe... more With the occasional feedback method, the chaotic logistic map is stabilized at an unstable low-periodic orbit. In our method, the qualified feedback coefficient can be obtained through calculation instead of through simulation. Besides, the bifurcation control of the logistic map is studied, and a new scheme is proposed to change the parameter value of any one bifurcation point of this
Modern Physics Letters B, 2009
International Journal of Modern Physics B, 2011
Diamond and Related Materials, 2009
Patterned carbon nanotube (CNT) arrays on Si substrate have been fabricated by using a two layer ... more Patterned carbon nanotube (CNT) arrays on Si substrate have been fabricated by using a two layer Sn/Ni catalyst in a diffusion ethanol flame. Vertically well-aligned CNT arrays were achieved on a Si substrate without any catalyst pretreatment. The Sn underlayer activated the substrates for CNT growth with Ni as catalyst, and provided a good contact between CNTs and the substrate, which is useful for field emission. Since the adhesion of Sn/Ni nanoparticles to the substrate is very strong, the growth of the CNTs follows a base-growth mode. The thickness of the Sn underlayer largely determines the diameter and diameter distribution of the as-grown CNTs. The morphologies and field electron emission properties of CNT arrays grown on Si substrates with different thicknesses of Sn and growth times have been investigated. The variation of emission current density was less than 5% during a 4h test under a field of 1.77V/µm.
Communications in Nonlinear Science and Numerical Simulation, 2011
Communications in Nonlinear Science and Numerical Simulation, 2011
Applied Physics Letters, 2011
ABSTRACT We fabricate an ultraviolet (UV)/orange bicolor light emitting diode (LED) based on an n... more ABSTRACT We fabricate an ultraviolet (UV)/orange bicolor light emitting diode (LED) based on an n-ZnO/n-GaN isotype heterojunction, which presents a sharp ultraviolet emission centered at 367 nm and a broad orange emission centered at 640 nm under forward and reverse biases, respectively. Time dependence electroluminescence (EL) measurements reveal that this device shows good stability. The electroluminescence mechanism of the bicolor light emitting diode is discussed in terms of the material properties of the interfacial layer and the luminescence properties of the device in this work.
Applied Physics Letters, 2009
N-ZnO nanorods/n-silicon heterojunction was fabricated by growth of ZnO nanorods on a n-type sili... more N-ZnO nanorods/n-silicon heterojunction was fabricated by growth of ZnO nanorods on a n-type silicon (111) wafer with a low-temperature aqueous solution method. Capacitance-voltage measurements revealed that after annealing at 900 °C in O2 ambient for 1 h, the heterojunction changed from abrupt N-ZnO nanorods/n-silicon to graded P-ZnO/n-silicon junction. The annealed diode showed good photoresponse in both the ultraviolet and visible
Applied Surface Science, 2008
Nickel oxide thin films were deposited on fused silica and Si(1 0 0) substrates at different subs... more Nickel oxide thin films were deposited on fused silica and Si(1 0 0) substrates at different substrate temperatures ranging from room temperature to 400 °C using radio frequency reactive magnetron sputtering from a Ni metal target in a mixture of O2 and Ar. With the increase of substrate temperature, nickel oxide films deposited on the Si substrates exhibit transition from amorphous to poly-crystalline structures with different preferred orientations of NiO(2 0 0) and (1 1 1). The films deposited at higher temperature exhibit higher Ni2+/Ni3+ ratio. With substrate temperature increasing from room temperature to 400 °C, the electrical resistivities of nickel oxide films increase from (2.8 ± 0.1) × 10−2 to (8.7 ± 0.1) Ω cm, and the optical band-gap energies increase from 3.65 to 3.88 eV. A p-nickel oxide/n-zinc oxide heterojunction was fabricated to confirm the p-type conduction of nickel oxide thin film, which exhibited a steadily rectifying behavior.