Wenbin Jiang - Academia.edu (original) (raw)
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Papers by Wenbin Jiang
Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication, 1993
Microwave and Optical Technology Letters, 1993
The thermal resistance of 1.3μm InGaAsP vertical cavity lasers is calculated using the finite dif... more The thermal resistance of 1.3μm InGaAsP vertical cavity lasers is calculated using the finite difference method in cylindrical coordinates. Three etched‐well laser structures are compared and the thermal resistance is calculated for a range of active area diameters and a typical cavity size. Using an InP regrown laser structure appears to be most promising for achieving room‐temperature continuous operation of long‐wavelength vertical cavity lasers. © 1993 John Wiley & Sons, Inc.
Applied Physics Letters, 1992
The first mode-locked GaAs vertical cavity surface emitting laser is reported. Pulses of 324 fs p... more The first mode-locked GaAs vertical cavity surface emitting laser is reported. Pulses of 324 fs pulsewidth with 64 W peak power were generated by compressing the output from the mode-locked laser.
Applied Physics Letters, 1991
We demonstrate that surface-emitting lasers operating in an external cavity can produce high aver... more We demonstrate that surface-emitting lasers operating in an external cavity can produce high average powers, high peak powers, and ultrashort pulses. By optical pumping of InGaAs/InP multiple quantum well samples in an external cavity, we generated 190 mW both in continuous and mode-locked operation at 1.5 μm. Synchronous pumping at 100 MHz yielded 7.7 ps pulses with 15 mW average power. These were shortened to 1. 1 ps pulses with 64 W peak power by chirp compensation using diffraction gratings, and to 710 fs by negative group-velocity dispersion in an optical fiber.
: We have demonstrated an external-cavity surface-emitting semiconductor laser (EX-SEL), obtainin... more : We have demonstrated an external-cavity surface-emitting semiconductor laser (EX-SEL), obtaining pulses as short as 710 fsec and peak powers as high as 64 W (after compression). A surface-emitting semiconductor laser (SEL) lacks the beam quality problems associated with cleaved-cavity lasers, and can be used to generate high output powers. Previous work with a SEL has produced 120 mW of CW power. Gain-switching of a SEL has yielded 3.9 psec pulses 2. To produce shorter pulses, mode-locking in an external cavity has been proved to be advantageous. For example, an external-cavity edge-emitting laser produced 580 fsec pulses at average powers of 1.4 mW 3. Hybrid mode-locking techniques combined with amplification and pulse-compression have resulted in 560 fsec pulses, average powers of 6.5 mW, and peak powers of 38 W 4. This paper describes mode-locking of an SEL in an external cavity.
Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication, 1993
Microwave and Optical Technology Letters, 1993
The thermal resistance of 1.3μm InGaAsP vertical cavity lasers is calculated using the finite dif... more The thermal resistance of 1.3μm InGaAsP vertical cavity lasers is calculated using the finite difference method in cylindrical coordinates. Three etched‐well laser structures are compared and the thermal resistance is calculated for a range of active area diameters and a typical cavity size. Using an InP regrown laser structure appears to be most promising for achieving room‐temperature continuous operation of long‐wavelength vertical cavity lasers. © 1993 John Wiley & Sons, Inc.
Applied Physics Letters, 1992
The first mode-locked GaAs vertical cavity surface emitting laser is reported. Pulses of 324 fs p... more The first mode-locked GaAs vertical cavity surface emitting laser is reported. Pulses of 324 fs pulsewidth with 64 W peak power were generated by compressing the output from the mode-locked laser.
Applied Physics Letters, 1991
We demonstrate that surface-emitting lasers operating in an external cavity can produce high aver... more We demonstrate that surface-emitting lasers operating in an external cavity can produce high average powers, high peak powers, and ultrashort pulses. By optical pumping of InGaAs/InP multiple quantum well samples in an external cavity, we generated 190 mW both in continuous and mode-locked operation at 1.5 μm. Synchronous pumping at 100 MHz yielded 7.7 ps pulses with 15 mW average power. These were shortened to 1. 1 ps pulses with 64 W peak power by chirp compensation using diffraction gratings, and to 710 fs by negative group-velocity dispersion in an optical fiber.
: We have demonstrated an external-cavity surface-emitting semiconductor laser (EX-SEL), obtainin... more : We have demonstrated an external-cavity surface-emitting semiconductor laser (EX-SEL), obtaining pulses as short as 710 fsec and peak powers as high as 64 W (after compression). A surface-emitting semiconductor laser (SEL) lacks the beam quality problems associated with cleaved-cavity lasers, and can be used to generate high output powers. Previous work with a SEL has produced 120 mW of CW power. Gain-switching of a SEL has yielded 3.9 psec pulses 2. To produce shorter pulses, mode-locking in an external cavity has been proved to be advantageous. For example, an external-cavity edge-emitting laser produced 580 fsec pulses at average powers of 1.4 mW 3. Hybrid mode-locking techniques combined with amplification and pulse-compression have resulted in 560 fsec pulses, average powers of 6.5 mW, and peak powers of 38 W 4. This paper describes mode-locking of an SEL in an external cavity.