Yinggang Li - Academia.edu (original) (raw)

Papers by Yinggang Li

IEEE Transactions on Microwave Theory and Techniques

We report on the development of a non-galvanic transition from a silicon micromachined to metalli... more We report on the development of a non-galvanic transition from a silicon micromachined to metallic rectangular waveguide for use in integrated waveguide systems at DDD -band (110–170 GHz). This transition overcomes the limitations of current solutions that require proper ohmic (galvanic) contact between both waveguides, and thus relaxes tolerance requirements in assembly and manufacturing. The transition uses an in-plane design which enables low-loss integration of micromachined waveguide components, as it eliminates the need for waveguide bends and complex multi-layer structures. We describe the RF design, analyze the EM simulation results, and explain the operating principle of the transition. To verify the concept, dedicated silicon micromachined and metallic waveguides are designed and fabricated. Characterization of the assembled samples shows good agreement with simulation. The transition achieves a typical insertion loss of 0.3 dB and return loss above 20 dB over most of the DDD -band. Measurement of multiple samples and repeated assemblies results in a variation of S21 of less than ±0.1 dB over the whole band, demonstrating good robustness and repeatability. By removing the need for galvanic connection, automated tools can then be used during system assembly, which enables industrial scale applications such as wireless communications.

2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2017

In millimeter-wave communication systems, generating high output power with high efficiency on th... more In millimeter-wave communication systems, generating high output power with high efficiency on the transmitter side is one major challenge. In this paper, a symbol-based outphasing power combining solution has been demonstrated with data rate up to 8 Gbps at an RF frequency of 83.5 GHz. This solution provides 2 dB higher output power compared to the power of two QAM signals at 12% EVM.

2017 IEEE MTT-S International Microwave Symposium (IMS), 2017

Journal of Infrared, Millimeter, and Terahertz Waves, 2021

This paper presents a novel micromachining process to fabricate a 140 GHz planar antenna based on... more This paper presents a novel micromachining process to fabricate a 140 GHz planar antenna based on gap waveguide technology to be used in the next-generation backhauling links. The 140 GHz planar array antenna consists of three layers, all of which have been fabricated using polymer-based microfabrication and injection molding. The 140 GHz antenna has the potential to be used as an element in a bigger 3D array in a line-of-sight (LOS) multiple input multiple output (MIMO) configuration to boost the network capacity. In this work, we focus on the fabrication of a single antenna array element based on gap waveguide technology. Depending on the complexity of each antenna layer’s design, three different micromachining techniques, SU8 fabrication, polydimethylsiloxane (PDMS) molding, and injection molding of the polymer (OSTEMER), together with gold (Au) coating, have been utilized to fabricate a single 140 GHz planar array antenna. The input reflection coefficient was measured to be belo...

2015 IEEE International Conference on Communication Workshop (ICCW), 2015

More than 10,000 participants and 1000 industrial exhibits of state-of-the-art microwave products... more More than 10,000 participants and 1000 industrial exhibits of state-of-the-art microwave products were part of last IMS Microwave Week conference. In fact, IMS Microwave Week is the world's largest conference of Radio Frequency (RF), which is the most essential forum for the latest research developments and practices in the field. There microwave experts gathered together and shared their innovative thoughts and ideas. During the <strong>IMS Microwave Week</strong> held on 2-7 June 2019 in Boston, Dr.Yinggang Li, Jonas Hansryd and Mikael Hörberg from Ericsson, as representatives of the Car2TERA project- the M3TERA project continuation, presented with the topic of "<strong>High capacity mmW point to point radio links for 5G and beyond:>100 GHz, >100 Gbps</strong>". IMS Microwave Week consisted of three related conferences including technical sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhib...

Proceedings of the Fourth European Conference on Antennas and Propagation, 2010

The paper presents ten months path attenuation measurements versus hydrometeor events for the 71–... more The paper presents ten months path attenuation measurements versus hydrometeor events for the 71–76 GHz band of a 1 km GbE 70/80 GHz microwave link. Precipitation and path attenuation agree well with predictions from the ITU-R models. The impact of a finite rain cell across the link is observed.

2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019

This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chips... more This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chipsets in a commercial 130nm SiGe BiCMOS process. The interconnect between the chipset and the package is non-galvanic and is realized in silicon micromachining technique. After successful fabrication and assembly, the individual Tx and Rx modules as well as the combined Tx-Rx link were tested using CW signals. Then realtime data transport over the link were carried out using different modulation formats and bandwidths. With 16QAM over a 750 MHz channel a 2.66 Gbit/s data rate was demonstrated with BER<10−11. These tests show that the D-band modules, obtained in a single implementation trial, work well functionally. The interconnect method is applicable to the full D-band and expected to also support frequencies in the sub-millimeter-wave range where traditional methods become challenging to apply.

2018 Asia-Pacific Microwave Conference (APMC), 2018

This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology wit... more This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with ft/fmaxf_t/f_{max}ft/fmax values of 250 GHzI 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110–147 GHz, while the amplifier operates between 115–155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is mathbf3mmtimes0.73mm\mathbf{3\ mm \times 0.73 \ mm}mathbf3mmtimes0.73mm including chip-to-waveguide transition. The transmitter gives −4 dBm output power at 140 GHz and can operate between 129–148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.

2018 Asia-Pacific Microwave Conference (APMC), 2018

This paper reports on a 143 GHz radio link, evaluated in long-term outdoor measurements over a 20... more This paper reports on a 143 GHz radio link, evaluated in long-term outdoor measurements over a 200 m hop-length. The link has been characterized with a variable attenuator in a back-to-back configuration. For the outdoor tests the received power level and signal quality have been monitored for two months under various weather conditions. The radio link shows a highest throughput of 5.3 Gbps using 64 QAM and 1 GHz carrier bandwidth. The corresponding mean squared error of the demodulated signal is -25 dB, and the receiver sensitivity level is -42 dBm with 3 dB penalty compared to the theoretically calculated value for this setup. The long-term outdoor test is run at QPSK and 125 MHz carrier bandwidth.

We report, for the first time, our experimental results of a high frequency micromixer operating ... more We report, for the first time, our experimental results of a high frequency micromixer operating from 17 to 26 GHz in SiGe technology. Good linearity performance is achieved: typically 0 dBm input-referred P/sub -1dB/ and 8 dBm IIP3. The conversion gain and double side band noise figure at 23 GHz RF input is -3.6 dB and 18.2 dB, respectively. The local oscillator power required for proper operation is below 0 dBm and the DC power consumption is 86 mW for a 3.3 V supply. For purpose of comparison, a Gilbert mixer is also implanted on the same wafer. The experimental results are compared for the two active mixers.

2020 14th European Conference on Antennas and Propagation (EuCAP)

This paper presents the design, implementation and experimental validation of a bandpass filter f... more This paper presents the design, implementation and experimental validation of a bandpass filter for high-data rate point-to-point link applications at E-band. The proposed design is developed in multilayer waveguide (MLW) technology, where an air-filled waveguide transmission line is formed by stacking several unconnected thin metal plates. Our MLW bandpass filter is designed by combining low-pass and high-pass filtering structures, and consists of 19 separate metal layers. An array of glide-symmetric holes, which act as an electromagnetic band gap (EBG) structure, are used to prevent any possible field leakage due to the air gaps between the layers. The fabricated filter provides a bandpass from 71.5 to 76 GHz with measured return loss better than 15 dB, and insertion loss better than 1.3 dB. The investigation of the potential for mass-production, as well as an evaluation of the MLW filter response for temperature variations from −30circmathrmC- 30 ^{\circ }\mathrm {C}−30circmathrmC to +70circmathrmC+ 70 ^{\circ }\mathrm {C}+70circmathrmC are discussed in this paper. The measured results show that the MLW filter has a center frequency thermal stability parameter of 9.3 ppm$/ ^{\circ }\mathrm {C}$, and center frequency drift of less than 0.12% over the whole temperature range. These results confirm the advantages of MLW technology for implementing ultra-compact bandpass filters showing low loss and potential for being mass-produced at millimeter-wave frequencies.

− After a brief discussion of the recent development of SiGe HBT technology, the state-ofthe-art ... more − After a brief discussion of the recent development of SiGe HBT technology, the state-ofthe-art achievement of the technology in circuits implementation is reviewed from an applied perspective, focusing on microwave and mm-wave applications. In particular, the performance of SiGe HBT-based oscillator and receiver front-end ICs are presented and relevant industry issues are addressed. I. DEVELOPMENT OF SIGE TECHNOLOGY SiGe technology is today one of the mainstream semiconductor technologies used in cellular communications. Even for higher frequency applications, well above 10 GHz, it is no longer a question whether or not the technology is feasible, but how it can be optimally deployed to either reduce cost, or improve performance, or enhance functionality. The rapid technology development has made SiGe being a viable alternative to III-V compound semiconductors for many microwave and millimeter-wave applications. Fig. 1 collected fmax and the associated fT data for selected SiGe HB...

2018 Asia-Pacific Microwave Conference (APMC)

2018 IEEE/MTT-S International Microwave Symposium - IMS, Jun 1, 2018

Physical review. B, Condensed matter, Jan 15, 1994

The motion of small Pt clusters at a step edge on the Pt(111) surface was studied by molecular-dy... more The motion of small Pt clusters at a step edge on the Pt(111) surface was studied by molecular-dynamics simulations using the corrected effective-medium theory. It was found that interlayer diffusion of the clusters proceeds via dissociation and consecutive single-atom exchanges with the edge atoms, rather than hopping over the edge as a unit. The dissociation and the exchanges occur in

IEEE Microwave and Wireless Components Letters, 2000

A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial he... more A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial heterojunction bipolar transistors IC process. The modulator circuit consists of an amplifier/latch structure, which is used as an OOK modulator for the first time. One of its advantages is that the topology may be implemented in both field effect transistor and bipolar technology. The measurement results correspond well with simulation and show that the modulator is capable of handling carrier frequencies up to 28 GHz, and data rates up to 14 Gbps. The isolation of the modulator in the off-state is better than 27 dB over the whole frequency range.

IEEE Transactions on Terahertz Science and Technology

IEEE Transactions on Microwave Theory and Techniques

We report on the development of a non-galvanic transition from a silicon micromachined to metalli... more We report on the development of a non-galvanic transition from a silicon micromachined to metallic rectangular waveguide for use in integrated waveguide systems at DDD -band (110–170 GHz). This transition overcomes the limitations of current solutions that require proper ohmic (galvanic) contact between both waveguides, and thus relaxes tolerance requirements in assembly and manufacturing. The transition uses an in-plane design which enables low-loss integration of micromachined waveguide components, as it eliminates the need for waveguide bends and complex multi-layer structures. We describe the RF design, analyze the EM simulation results, and explain the operating principle of the transition. To verify the concept, dedicated silicon micromachined and metallic waveguides are designed and fabricated. Characterization of the assembled samples shows good agreement with simulation. The transition achieves a typical insertion loss of 0.3 dB and return loss above 20 dB over most of the DDD -band. Measurement of multiple samples and repeated assemblies results in a variation of S21 of less than ±0.1 dB over the whole band, demonstrating good robustness and repeatability. By removing the need for galvanic connection, automated tools can then be used during system assembly, which enables industrial scale applications such as wireless communications.

2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2017

In millimeter-wave communication systems, generating high output power with high efficiency on th... more In millimeter-wave communication systems, generating high output power with high efficiency on the transmitter side is one major challenge. In this paper, a symbol-based outphasing power combining solution has been demonstrated with data rate up to 8 Gbps at an RF frequency of 83.5 GHz. This solution provides 2 dB higher output power compared to the power of two QAM signals at 12% EVM.

2017 IEEE MTT-S International Microwave Symposium (IMS), 2017

Journal of Infrared, Millimeter, and Terahertz Waves, 2021

This paper presents a novel micromachining process to fabricate a 140 GHz planar antenna based on... more This paper presents a novel micromachining process to fabricate a 140 GHz planar antenna based on gap waveguide technology to be used in the next-generation backhauling links. The 140 GHz planar array antenna consists of three layers, all of which have been fabricated using polymer-based microfabrication and injection molding. The 140 GHz antenna has the potential to be used as an element in a bigger 3D array in a line-of-sight (LOS) multiple input multiple output (MIMO) configuration to boost the network capacity. In this work, we focus on the fabrication of a single antenna array element based on gap waveguide technology. Depending on the complexity of each antenna layer’s design, three different micromachining techniques, SU8 fabrication, polydimethylsiloxane (PDMS) molding, and injection molding of the polymer (OSTEMER), together with gold (Au) coating, have been utilized to fabricate a single 140 GHz planar array antenna. The input reflection coefficient was measured to be belo...

2015 IEEE International Conference on Communication Workshop (ICCW), 2015

More than 10,000 participants and 1000 industrial exhibits of state-of-the-art microwave products... more More than 10,000 participants and 1000 industrial exhibits of state-of-the-art microwave products were part of last IMS Microwave Week conference. In fact, IMS Microwave Week is the world's largest conference of Radio Frequency (RF), which is the most essential forum for the latest research developments and practices in the field. There microwave experts gathered together and shared their innovative thoughts and ideas. During the <strong>IMS Microwave Week</strong> held on 2-7 June 2019 in Boston, Dr.Yinggang Li, Jonas Hansryd and Mikael Hörberg from Ericsson, as representatives of the Car2TERA project- the M3TERA project continuation, presented with the topic of "<strong>High capacity mmW point to point radio links for 5G and beyond:>100 GHz, >100 Gbps</strong>". IMS Microwave Week consisted of three related conferences including technical sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhib...

Proceedings of the Fourth European Conference on Antennas and Propagation, 2010

The paper presents ten months path attenuation measurements versus hydrometeor events for the 71–... more The paper presents ten months path attenuation measurements versus hydrometeor events for the 71–76 GHz band of a 1 km GbE 70/80 GHz microwave link. Precipitation and path attenuation agree well with predictions from the ITU-R models. The impact of a finite rain cell across the link is observed.

2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019

This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chips... more This paper reports on 130 GHz transceiver modules consisting of integrated multi-functional chipsets in a commercial 130nm SiGe BiCMOS process. The interconnect between the chipset and the package is non-galvanic and is realized in silicon micromachining technique. After successful fabrication and assembly, the individual Tx and Rx modules as well as the combined Tx-Rx link were tested using CW signals. Then realtime data transport over the link were carried out using different modulation formats and bandwidths. With 16QAM over a 750 MHz channel a 2.66 Gbit/s data rate was demonstrated with BER<10−11. These tests show that the D-band modules, obtained in a single implementation trial, work well functionally. The interconnect method is applicable to the full D-band and expected to also support frequencies in the sub-millimeter-wave range where traditional methods become challenging to apply.

2018 Asia-Pacific Microwave Conference (APMC), 2018

This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology wit... more This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with ft/fmaxf_t/f_{max}ft/fmax values of 250 GHzI 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110–147 GHz, while the amplifier operates between 115–155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is mathbf3mmtimes0.73mm\mathbf{3\ mm \times 0.73 \ mm}mathbf3mmtimes0.73mm including chip-to-waveguide transition. The transmitter gives −4 dBm output power at 140 GHz and can operate between 129–148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.

2018 Asia-Pacific Microwave Conference (APMC), 2018

This paper reports on a 143 GHz radio link, evaluated in long-term outdoor measurements over a 20... more This paper reports on a 143 GHz radio link, evaluated in long-term outdoor measurements over a 200 m hop-length. The link has been characterized with a variable attenuator in a back-to-back configuration. For the outdoor tests the received power level and signal quality have been monitored for two months under various weather conditions. The radio link shows a highest throughput of 5.3 Gbps using 64 QAM and 1 GHz carrier bandwidth. The corresponding mean squared error of the demodulated signal is -25 dB, and the receiver sensitivity level is -42 dBm with 3 dB penalty compared to the theoretically calculated value for this setup. The long-term outdoor test is run at QPSK and 125 MHz carrier bandwidth.

We report, for the first time, our experimental results of a high frequency micromixer operating ... more We report, for the first time, our experimental results of a high frequency micromixer operating from 17 to 26 GHz in SiGe technology. Good linearity performance is achieved: typically 0 dBm input-referred P/sub -1dB/ and 8 dBm IIP3. The conversion gain and double side band noise figure at 23 GHz RF input is -3.6 dB and 18.2 dB, respectively. The local oscillator power required for proper operation is below 0 dBm and the DC power consumption is 86 mW for a 3.3 V supply. For purpose of comparison, a Gilbert mixer is also implanted on the same wafer. The experimental results are compared for the two active mixers.

2020 14th European Conference on Antennas and Propagation (EuCAP)

This paper presents the design, implementation and experimental validation of a bandpass filter f... more This paper presents the design, implementation and experimental validation of a bandpass filter for high-data rate point-to-point link applications at E-band. The proposed design is developed in multilayer waveguide (MLW) technology, where an air-filled waveguide transmission line is formed by stacking several unconnected thin metal plates. Our MLW bandpass filter is designed by combining low-pass and high-pass filtering structures, and consists of 19 separate metal layers. An array of glide-symmetric holes, which act as an electromagnetic band gap (EBG) structure, are used to prevent any possible field leakage due to the air gaps between the layers. The fabricated filter provides a bandpass from 71.5 to 76 GHz with measured return loss better than 15 dB, and insertion loss better than 1.3 dB. The investigation of the potential for mass-production, as well as an evaluation of the MLW filter response for temperature variations from −30circmathrmC- 30 ^{\circ }\mathrm {C}−30circmathrmC to +70circmathrmC+ 70 ^{\circ }\mathrm {C}+70circmathrmC are discussed in this paper. The measured results show that the MLW filter has a center frequency thermal stability parameter of 9.3 ppm$/ ^{\circ }\mathrm {C}$, and center frequency drift of less than 0.12% over the whole temperature range. These results confirm the advantages of MLW technology for implementing ultra-compact bandpass filters showing low loss and potential for being mass-produced at millimeter-wave frequencies.

− After a brief discussion of the recent development of SiGe HBT technology, the state-ofthe-art ... more − After a brief discussion of the recent development of SiGe HBT technology, the state-ofthe-art achievement of the technology in circuits implementation is reviewed from an applied perspective, focusing on microwave and mm-wave applications. In particular, the performance of SiGe HBT-based oscillator and receiver front-end ICs are presented and relevant industry issues are addressed. I. DEVELOPMENT OF SIGE TECHNOLOGY SiGe technology is today one of the mainstream semiconductor technologies used in cellular communications. Even for higher frequency applications, well above 10 GHz, it is no longer a question whether or not the technology is feasible, but how it can be optimally deployed to either reduce cost, or improve performance, or enhance functionality. The rapid technology development has made SiGe being a viable alternative to III-V compound semiconductors for many microwave and millimeter-wave applications. Fig. 1 collected fmax and the associated fT data for selected SiGe HB...

2018 Asia-Pacific Microwave Conference (APMC)

2018 IEEE/MTT-S International Microwave Symposium - IMS, Jun 1, 2018

Physical review. B, Condensed matter, Jan 15, 1994

The motion of small Pt clusters at a step edge on the Pt(111) surface was studied by molecular-dy... more The motion of small Pt clusters at a step edge on the Pt(111) surface was studied by molecular-dynamics simulations using the corrected effective-medium theory. It was found that interlayer diffusion of the clusters proceeds via dissociation and consecutive single-atom exchanges with the edge atoms, rather than hopping over the edge as a unit. The dissociation and the exchanges occur in

IEEE Microwave and Wireless Components Letters, 2000

A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial he... more A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial heterojunction bipolar transistors IC process. The modulator circuit consists of an amplifier/latch structure, which is used as an OOK modulator for the first time. One of its advantages is that the topology may be implemented in both field effect transistor and bipolar technology. The measurement results correspond well with simulation and show that the modulator is capable of handling carrier frequencies up to 28 GHz, and data rates up to 14 Gbps. The isolation of the modulator in the off-state is better than 27 dB over the whole frequency range.

IEEE Transactions on Terahertz Science and Technology