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Papers by Zuraida Khusaimi
Nanocrystalline zinc oxide (ZnO) were grown on silicon (Si) substrates by sol-gel spin coating, w... more Nanocrystalline zinc oxide (ZnO) were grown on silicon (Si) substrates by sol-gel spin coating, without the presence of metal catalyst. In the process, annealing temperatures were varied from 350-500° C and it was found that increasing the annealing temperature had improved the crystalline structure of ZnO. The reaction mechanism of sol-gel process forming ZnO was also suggested.
Synthesis and Reactivity in Inorganic Metal-organic and Nano-metal Chemistry, 2010
The controlled growth of zinc oxide nanorods in aqueous-solution is reported. Zinc oxide (ZnO) mi... more The controlled growth of zinc oxide nanorods in aqueous-solution is reported. Zinc oxide (ZnO) micro-and nano-rods were successfully prepared on gold-seeded Si substrates in aqueous solution containing 1: 1 ratio of varying concentrations of zinc nitrate ...
Journal of Nanomaterials, 2012
ZnO nanoparticles were prepared on Si substrates by a mist-atomisation technique. Precursor of aq... more ZnO nanoparticles were prepared on Si substrates by a mist-atomisation technique. Precursor of aqueous solution zinc nitrate and HMTA were released on substrates heated at 200, 300, and 400 • C confined in chamber box. The surface of Si substrate was varied, that is, gold-seeded Si (Si/Au), ZnO nanorods on Si/Au (Si/Au/ZnO), and just Si. The samples were subsequently analysed by X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectroscopy to study their structural, surface morphology, and PL emission properties. Analysis from the XRD patterns of the films showed strong a-and c-axis lattice and of pure ZnO hexagonal wurtzite type. The crystallite size varied from 6 to 43 nm and was found to generally increase with increasing substrates' temperatures(T s ). SEM micrographs revealed granular-like structure throughout. Shifts pattern of PL emission at ultraviolet and visible range was found to support size changes observed. Both substrate surface type and deposition temperature were found to significantly affect crystalline growth of ZnO nanoparticles. Chemical equations and justification for growth patterns are also suggested.
Advanced Materials Research, 2013
ABSTRACT Low-temperature solution immersion growth of low-dimensional ZnO nanostructures on gold-... more ABSTRACT Low-temperature solution immersion growth of low-dimensional ZnO nanostructures on gold-seeded Si substrate has been demonstrated. pH environment of the precursor solution, Zn(NO3)2.6H2O (zinc nitrate hexahydrate) and C6H12N4 (HMTA) was found to have considerable effect to ZnO morphology and photoluminescence. Structural, morphological and photoluminescence (PL) properties of the samples were obtained from XRD, SEM and PL-Raman characterisation. A near neutral (pH = 6.8) and acidic (pH = 5) precursor solution aided a dense near-aligned ZnO nanorods growth with smallest rods diameter of 30 and 20 nm respectively. Whereas alkaline precursor solution (pH = 9) gave rise to flower-like structures of ZnO. Chemical equations for the reactions and the role of H+ and OH- ions role in affecting the XRD diffraction peaks and morphology, are suggested. Room temperature PL emission spectra of ZnO were collected after excitation at 325 nm. UV and visible emission distinctive of ZnO were formed and the rationale for significant shifts of the visible emission was also discussed.
Advanced Materials Research, 2012
Postgrowth rapid thermal annealing was performed on InGaAs/GaAs quantum dots grown by molecular b... more Postgrowth rapid thermal annealing was performed on InGaAs/GaAs quantum dots grown by molecular beam epitaxy. The blue shift of the emission peak and the narrowing of the luminescence line width are observed at lower annealing temperature. However, when the annealing temperature is increased to 8503C, the emission line width becomes larger. The TEM image of this sample shows that the surface becomes rough, and some large clusters are formed, which is due to the interdi!usion of In, Ga atoms at the InGaAs/GaAs interface and to the strain relaxation. The material is found to degrade dramatically when the annealing temperature is further increased to 9003C, while emission from quantum dots can still be detected, along with the appearance of the emission from excited state.
Nanocrystalline zinc oxide (ZnO) were grown on silicon (Si) substrates by sol-gel spin coating, w... more Nanocrystalline zinc oxide (ZnO) were grown on silicon (Si) substrates by sol-gel spin coating, without the presence of metal catalyst. In the process, annealing temperatures were varied from 350-500° C and it was found that increasing the annealing temperature had improved the crystalline structure of ZnO. The reaction mechanism of sol-gel process forming ZnO was also suggested.
Synthesis and Reactivity in Inorganic Metal-organic and Nano-metal Chemistry, 2010
The controlled growth of zinc oxide nanorods in aqueous-solution is reported. Zinc oxide (ZnO) mi... more The controlled growth of zinc oxide nanorods in aqueous-solution is reported. Zinc oxide (ZnO) micro-and nano-rods were successfully prepared on gold-seeded Si substrates in aqueous solution containing 1: 1 ratio of varying concentrations of zinc nitrate ...
Journal of Nanomaterials, 2012
ZnO nanoparticles were prepared on Si substrates by a mist-atomisation technique. Precursor of aq... more ZnO nanoparticles were prepared on Si substrates by a mist-atomisation technique. Precursor of aqueous solution zinc nitrate and HMTA were released on substrates heated at 200, 300, and 400 • C confined in chamber box. The surface of Si substrate was varied, that is, gold-seeded Si (Si/Au), ZnO nanorods on Si/Au (Si/Au/ZnO), and just Si. The samples were subsequently analysed by X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectroscopy to study their structural, surface morphology, and PL emission properties. Analysis from the XRD patterns of the films showed strong a-and c-axis lattice and of pure ZnO hexagonal wurtzite type. The crystallite size varied from 6 to 43 nm and was found to generally increase with increasing substrates' temperatures(T s ). SEM micrographs revealed granular-like structure throughout. Shifts pattern of PL emission at ultraviolet and visible range was found to support size changes observed. Both substrate surface type and deposition temperature were found to significantly affect crystalline growth of ZnO nanoparticles. Chemical equations and justification for growth patterns are also suggested.
Advanced Materials Research, 2013
ABSTRACT Low-temperature solution immersion growth of low-dimensional ZnO nanostructures on gold-... more ABSTRACT Low-temperature solution immersion growth of low-dimensional ZnO nanostructures on gold-seeded Si substrate has been demonstrated. pH environment of the precursor solution, Zn(NO3)2.6H2O (zinc nitrate hexahydrate) and C6H12N4 (HMTA) was found to have considerable effect to ZnO morphology and photoluminescence. Structural, morphological and photoluminescence (PL) properties of the samples were obtained from XRD, SEM and PL-Raman characterisation. A near neutral (pH = 6.8) and acidic (pH = 5) precursor solution aided a dense near-aligned ZnO nanorods growth with smallest rods diameter of 30 and 20 nm respectively. Whereas alkaline precursor solution (pH = 9) gave rise to flower-like structures of ZnO. Chemical equations for the reactions and the role of H+ and OH- ions role in affecting the XRD diffraction peaks and morphology, are suggested. Room temperature PL emission spectra of ZnO were collected after excitation at 325 nm. UV and visible emission distinctive of ZnO were formed and the rationale for significant shifts of the visible emission was also discussed.
Advanced Materials Research, 2012
Postgrowth rapid thermal annealing was performed on InGaAs/GaAs quantum dots grown by molecular b... more Postgrowth rapid thermal annealing was performed on InGaAs/GaAs quantum dots grown by molecular beam epitaxy. The blue shift of the emission peak and the narrowing of the luminescence line width are observed at lower annealing temperature. However, when the annealing temperature is increased to 8503C, the emission line width becomes larger. The TEM image of this sample shows that the surface becomes rough, and some large clusters are formed, which is due to the interdi!usion of In, Ga atoms at the InGaAs/GaAs interface and to the strain relaxation. The material is found to degrade dramatically when the annealing temperature is further increased to 9003C, while emission from quantum dots can still be detected, along with the appearance of the emission from excited state.