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As the Integrated Circuits (IC) density keeps on increasing with the scaling of CMOS devices in e... more As the Integrated Circuits (IC) density keeps on
increasing with the scaling of CMOS devices in each successive
technology generation, reliability concerns mainly Negative Bias
Temperature Instability (NBTI) becomes a major challenge.
NBTI degrades the performance of a PMOS transistor under a
negative gate stress. The after effects of NBTI include: (a)
threshold voltage increase of PMOS transistor, (b) drain current
degradation, and (c) speed degradation. Elevated temperature
and the negative gate stress play an important role in
degradation of Gate Oxide which further degrades the above said
parameters. Before any circuit design Stress Analysis becomes
important for any device in order to get the complete
performance of the circuit. Negative bias temperature instability
(NBTI) has become the dominant reliability concern for
nanoscale PMOS transistors. In this paper basically we have
analysed the effect of temperature variations on NBTI for a
buffer.
As the Integrated Circuits (IC) density keeps on increasing with the scaling of CMOS devices in e... more As the Integrated Circuits (IC) density keeps on
increasing with the scaling of CMOS devices in each successive
technology generation, reliability concerns mainly Negative Bias
Temperature Instability (NBTI) becomes a major challenge.
NBTI degrades the performance of a PMOS transistor under a
negative gate stress. The after effects of NBTI include: (a)
threshold voltage increase of PMOS transistor, (b) drain current
degradation, and (c) speed degradation. Elevated temperature
and the negative gate stress play an important role in
degradation of Gate Oxide which further degrades the above said
parameters. Before any circuit design Stress Analysis becomes
important for any device in order to get the complete
performance of the circuit. Negative bias temperature instability
(NBTI) has become the dominant reliability concern for
nanoscale PMOS transistors. In this paper basically we have
analysed the effect of temperature variations on NBTI for a
buffer.