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Papers by arbouz hayet

Hayat Arbouz, 2024

This work deals with the simulation and optimization of a configured solar cell: FTO/PCBM/CsSnGeI... more This work deals with the simulation and optimization of a configured solar cell: FTO/PCBM/CsSnGeI 3 /PTAA/Au, whose three main layers are the absorber made of the inorganic and lead-free perovskite material CsSnGeI 3 with a band gap energy of 1.5 eV, surrounded by two carrier transport layers, the electron transport layer ETL of PCBM and the hole transport layer HTL of PTAA. An appropriate simulation model was detailed, with the subsequent aim of calculating the current-voltage curve and photovoltaic performance of the cell, taking into account the impact of varying certain physical parameters such as the defect density in the absorber and the defect density at the interface between the absorber and its surrounding ETL and HTL layers, which influence recombination in the absorber and at the interfaces, the architectural dimensions of the main layers, which have an impact on the amount of absorption, and the operating temperature, which varies photovoltaic performance. The results obtained showed that the optimized FTO/ZnSe/CsnGeI 3 /Spiro-OMeTAD/Au configured structure, whose optimized thicknesses of the main layers and optimized physical parameters are detailed in the work, achieved a power conversion efficiency of 17.7% with Voc=0.8865 V J ph = 24.43 mA/cm² and FF = 76.51%. In the study, this single cell was used as the top sub-cell in a tandem solar cell structure, once combined with a silicon bottom sub-cell and again with a CIGS sub-cell, and an efficiency of over 35 % was achieved. Simulation results for the single and tandem structures studied were compared with similar devices reported, and a good correlation was found. This work contributes to the development of efficient and non-toxic perovskite solar cell structures for single and tandem devices.

International journal of computational and experimental science and engineering, Feb 15, 2024

This work deals with the simulation and optimization of a single perovskite solar cell based on t... more This work deals with the simulation and optimization of a single perovskite solar cell based on the lead-free, inorganic perovskite absorber CsGeI3 with a bandgap energy of 1.6 eV. An appropriate simulation model was designed on the basis of the physical properties employed and carefully selected. Firstly, the study demonstrated the role of increasing the bulk defect density of the absorber as well as the interface defect density at the boundaries between the absorber and the carrier transport layers on increasing the photo-generated carrier recombination velocity, causing the collapse of the solar cell performance. The effect of layer thickness on photovoltaic parameters was also investigated. Next, various combinations of ETL and HTL electron and hole transport materials, with different bandgap alignments with the absorber were studied. The performance of the different structures was used to determine the optimum structure for obtaining the best results. An efficiency of 15.9% was obtained with the ETL-SnO2 /CsGeI3/HTL-SrCu2O2 architecture. Finally, the optimized structure was simulated in a 2T-tandem configuration in combination with the 1.3 eV-CsSnI3 based solar sub-cell. It was found that the efficiency could reach 25%. The aim of this work is to develop an efficient, lead-free and stable perovskite cell structure that could replace its hybrid perovskite counterpart and be used as a performing sub-cell in a tandem structure.

Journal of Engineering Research

Thermal Science and Engineering

In this paper, we modeled and simulated two tandem solar cell structures (a) and (b), in a two-te... more In this paper, we modeled and simulated two tandem solar cell structures (a) and (b), in a two-terminal configuration based on inorganic and lead-free absorber materials. The structures are composed of sub-cells already studied in our previous work, where we simulated the impact of defect density and recombination rate at the interfaces, as well as that of the thicknesses of the charge transport and absorber layers, on the photovoltaic performance. We also studied the performance resulting from the use of different materials for the electron and hole transport layers. The two structures studied include a bottom cell based on the perovskite material CsSnI3 with a band gap energy of 1.3 eV and a thickness of 1.5 µm. The first structure has an upper sub-cell based on the CsSnGeI3 material with an energy of 1.5 eV, while the second has an upper sub-cell made of Cs2TiBr6 with a band gap energy of 1.6 eV. The theoretical model used to evaluate the photocurrent density, current-voltage cha...

Applied Rheology

Perovskites are considered the most promising material for the latest generation of solar cells. ... more Perovskites are considered the most promising material for the latest generation of solar cells. However, due to the presence of lead in their composition, the development of non-toxic Perovskite cells has become an essential goal to enable their large-scale production. In this work, we have simulated, modeled and optimized the structure of a single solar cell that consists of a non-toxic cesium–tin–iodine CsSnI3 Perovskite absorber with a low band gap energy value of 1.3 eV, between TiO2 and PTAA materials as ETL and HTL layers, respectively. A simulation model describing the charge carrier processes and the effect of interface defect density is presented. Several structures based on alternative ETL and HTL materials are proposed. An optimal device structure is proposed based on the results obtained. An efficiency of 19.92% is obtained with V oc = 0.829 V, J sc = 30.68 mA/cm2 and FF = 73.33% using SnO2 and Spiro-OMeTAD as ETL and HTL materials. However, 29.22% is achieved using the...

Applied Rheology, 2023

Perovskites are considered the most promising material for the latest generation of solar cells. ... more Perovskites are considered the most promising material for the latest generation of solar cells. However, due to the presence of lead in their composition, the development of non-toxic Perovskite cells has become an essential goal to enable their large-scale production. In this work, we have simulated, modeled and optimized the structure of a single solar cell that consists of a nontoxic cesium-tin-iodine CsSnI 3 Perovskite absorber with a low band gap energy value of 1.3 eV, between TiO 2 and PTAA materials as ETL and HTL layers, respectively. A simulation model describing the charge carrier processes and the effect of interface defect density is presented. Several structures based on alternative ETL and HTL materials are proposed. An optimal device structure is proposed based on the results obtained. An efficiency of 19.92% is obtained with V oc = 0.829 V, J sc = 30.68 mA/cm 2 and FF = 73.33% using SnO 2 and Spiro-OMeTAD as ETL and HTL materials. However, 29.22% is achieved using the optimal structure as the bottom cell in a tandem configuration.

International Journal of Computational and Experimental Science and Engineering

In this paper, we simulated a double junction cell based on top CdS/Cu2ZnSnS4 cell, stacked on a ... more In this paper, we simulated a double junction cell based on top CdS/Cu2ZnSnS4 cell, stacked on a bottom CdS/Cu2ZnSnSe4 cell. We started by studying the perfomance of the bottom solar cell, based on the copper zinc tin selenide Cu2ZnSnSe4 (CZTSe) absorber. Then, we evaluated the photovoltaic parameters of the tandem cell at the optimized thickness of the copper zinc tin sulfide Cu2ZnSnS4 (CZTS) absorber of the top cell, where the top and bottom cells deliver the same photocurrent density. We achieved A maximum efficiency of 24.68% with an open circuit voltage of 1.33 V and a photocurrent density of 16.54 mA/cm² for the thicknesses 413.8 nm and 2 µm of CZTS and CZTSe absorbers, respectively. İn order to improve power conversion efficiency, light trapping effects was studied. The use of randomly textured top cell absorber allows the reduction of its thickness to 270 nm. An efficiency of 24.71% was then obtained. Finally, the effect of replacing the toxic CdS buffer absorber with the ZnS material was investigated.

Perovskites are considered the most promising material for the latest generation of solar cells. ... more Perovskites are considered the most promising material for the latest generation of solar cells. However, due to the presence of lead in their composition, the development of non-toxic Perovskite cells has become an essential goal to enable their large-scale production. In this work, we have simulated, modeled and optimized the structure of a single solar cell that consists of a nontoxic cesium-tin-iodine CsSnI 3 Perovskite absorber with a low band gap energy value of 1.3 eV, between TiO 2 and PTAA materials as ETL and HTL layers, respectively. A simulation model describing the charge carrier processes and the effect of interface defect density is presented. Several structures based on alternative ETL and HTL materials are proposed. An optimal device structure is proposed based on the results obtained. An efficiency of 19.92% is obtained with V oc = 0.829 V, J sc = 30.68 mA/cm 2 and FF = 73.33% using SnO 2 and Spiro-OMeTAD as ETL and HTL materials. However, 29.22% is achieved using the optimal structure as the bottom cell in a tandem configuration.

Perovskites are considered the most promising material for the latest generation of solar cells. ... more Perovskites are considered the most promising material for the latest generation of solar cells. However, due to the presence of lead in their composition, the development of non-toxic Perovskite cells has become an essential goal to enable their large-scale production. In this work, we have simulated, modeled and optimized the structure of a single solar cell that consists of a nontoxic cesium-tin-iodine CsSnI 3 Perovskite absorber with a low band gap energy value of 1.3 eV, between TiO 2 and PTAA materials as ETL and HTL layers, respectively. A simulation model describing the charge carrier processes and the effect of interface defect density is presented. Several structures based on alternative ETL and HTL materials are proposed. An optimal device structure is proposed based on the results obtained. An efficiency of 19.92% is obtained with V oc = 0.829 V, J sc = 30.68 mA/cm 2 and FF = 73.33% using SnO 2 and Spiro-OMeTAD as ETL and HTL materials. However, 29.22% is achieved using the optimal structure as the bottom cell in a tandem configuration.

2022 International Conference on Electrical, Computer, Communications and Mechatronics Engineering (ICECCME)

MRS Advances, 2016

ABSTRACTRecently, metal-halide perovskites have demonstrated an extraordinarily rapid advance in ... more ABSTRACTRecently, metal-halide perovskites have demonstrated an extraordinarily rapid advance in single junction cell efficiency to over 20%, while still offering potentially low costs. Since the bandgap is larger than the ideal single-junction value, perovskite-based tandem cells can theoretically offer even higher efficiencies. Instead, however, the record tandem cell performance in experiments to date has come in slightly below that of record single junctions, although slightly higher than the same single junctions. In this work, we consider both how this disconnect can be explained quantitatively, and then devise experimentally feasible, variance-aware approaches to address them. The first stage of our approach is based on reconfiguring dielectric front coatings to help reduce net reflected power and balance junction currents by reshaping the reflection peaks. This method could be applied to post-fabrication stage of perovskite/c-Si tandem cells, and also applicable to cell and ...

Recently, metal-halide perovskites have demonstrated an extraordinarily rapid advance in single j... more Recently, metal-halide perovskites have demonstrated an extraordinarily rapid advance in single junction cell efficiency to over 20%, while still offering potentially low costs. Since the bandgap is larger than the ideal single-junction value, perovskite-based tandem cells can theoretically offer even higher efficiencies. Instead, however, the record tandem cell performance in experiments to date has come in slightly below that of record single junctions, although slightly higher than the same single junctions. In this work, we consider both how this disconnect can be explained quantitatively, and then devise experimentally feasible, variance-aware approaches to address them. The first stage of our approach is based on reconfiguring dielectric front coatings to help reduce net reflected power and balance junction currents by reshaping the reflection peaks. This method could be applied to post-fabrication stage of perovskite/c-Si tandem cells, and also applicable to cell and module level structures. In the second stage of our approach, we can almost entirely eliminate Fresnel reflection by applying a conformal periodic light trapping structure. In the best case, a short circuit current (J sc) of 18.0 mA/cm 2 was achieved, after accounting for 4.8 mA/cm 2 of parasitic loss and 1.6 mA/cm 2 reflection loss. Further improvements may require a change in the baseline materials used in perovskite cells.

EasyChair, Jul 7, 2020

İn this paper a kestrite double junction tandem solar cell based on a CdS/Cu2ZnSnS4 top cell stac... more İn this paper a kestrite double junction tandem solar cell based on a CdS/Cu2ZnSnS4 top cell stacked on CdS/Cu2ZnSnSe4 bottom cell has been simulated. Firstly, the performance of the bottom cell was investigated against the variation of the CZTSe absorber thickness. The performance of the tandem cell was determined according to the optimized CZTS top cell absorber thickness for which current match condition of top and bottom sub cells is reached. A maximum efficiency of 24.68 % with 1.33 V open circuit voltage was achieved for 16.54 mA/cm² density of current, 413.8 nm thick CZTS top cell absorber and 2µm thick CZTSe bottom cell absorber. İn order to improve power conversion efficiency, light trapping effects have been investigated in this work. The use of back mirror in the bottom sub cell has led to a double absorption in the CZTSe layer allowing the increase of efficiency up to 24.8%. This work also demonstrated that the use of randomly textured top cell absorber allows the reduction of its thickness to 270 nm. An efficiency of 24.71% was than obtained. Finally, the effect of replacing the toxic CdS buffer absorber with the ZnS material was investigated.

International journal of computational and experimental science and engineering, Mar 31, 2022

In this paper, we simulated a double junction cell based on top CdS/Cu2ZnSnS4 cell, stacked on a ... more In this paper, we simulated a double junction cell based on top CdS/Cu2ZnSnS4 cell, stacked on a bottom CdS/Cu2ZnSnSe4 cell. We started by studying the perfomance of the bottom solar cell, based on the copper zinc tin selenide Cu2ZnSnSe4 (CZTSe) absorber. Then, we evaluated the photovoltaic parameters of the tandem cell at the optimized thickness of the copper zinc tin sulfide Cu2ZnSnS4 (CZTS) absorber of the top cell, where the top and bottom cells deliver the same photocurrent density. We achieved A maximum efficiency of 24.68% with an open circuit voltage of 1.33 V and a photocurrent density of 16.54 mA/cm² for the thicknesses 413.8 nm and 2 µm of CZTS and CZTSe absorbers, respectively. İn order to improve power conversion efficiency, light trapping effects was studied. The use of randomly textured top cell absorber allows the reduction of its thickness to 270 nm. An efficiency of 24.71% was then obtained. Finally, the effect of replacing the toxic CdS buffer absorber with the ZnS material was investigated.

In this work, a front graded band gap of CIGS absorber is simulated where a spatial variation of ... more In this work, a front graded band gap of CIGS absorber is simulated where a spatial variation of the band gap energy decreases from a maximum value E gmax at the limit of the junction to a minimum value E gmin at the vicinity of the back contact within the length of the CIGS layer. An effective absorption coefficient due to this variation was defined. It will be seen that this graded profile contributes to improve the open circuit voltage Voc owing to the effect of the created quasi-electrical field on the photo generated carriers which lead to an improvement of the efficiency. However, a reduction of the short current density J sc is noted. We also demonstrate that the absorber thickness has an impact on the parameters above mentioned. This simulation allowed us to optimize the grading profile which consists on E gmin , E gmax and the absorber thickness d in order to reach a desired significant improvement of V oc and efficiency.

2015 3rd International Renewable and Sustainable Energy Conference (IRSEC), 2015

In this work, we were interested about the study of modeling and simulation of a structure based ... more In this work, we were interested about the study of modeling and simulation of a structure based on In1-xGaxN/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorption of photons with wavelengths near to red. We had also studied a different parameters characterized the solar cell which served us to calculate the efficiency of photovoltaic conversion. For the In0.35Ga0.65N/GaN structure, we obtained efficiency around 23%. This study of structures allowed us to fabricate structures for solar cells based on multi-junction.

2015 3rd International Renewable and Sustainable Energy Conference (IRSEC), 2015

This work deals with the modeling and optimization of the CuInGaSe/CdS based structure for photov... more This work deals with the modeling and optimization of the CuInGaSe/CdS based structure for photovoltaic applications. We took into consideration the effect of the gallium concentration and the temperature on the strain, band gap energy, absorption and efficiency of the structure. It has been demonstrated that increasing the gallium concentration increases the ban gap energy, while increasing temperature decreases it. These two parameters vary the efficiency significantly. For x ¼ 30% and T ¼ 300 K, the band gap energy is equal to 1.15 eV with a deformation of 0.5% and efficiency around 20%. We have also found that at this value of the band gap energy the structure absorbs most of the incident photons. Then to achieve a reliable cell based on CuInGaSe/CdS it is adequate to find a compromise between the gallium concentration in the alloy, the temperature and the strain.

Alexandria Engineering Journal, 2017

Abstract We have investigated the simulation approach of a one-dimensional online simulator named... more Abstract We have investigated the simulation approach of a one-dimensional online simulator named A Device Emulation Program and Tool ( ADEPT 2.1 ) and the device performances of a thin film solar cell based on Cu 2 ZnSn ( S,Se ) 4 ( CZTSSe ) absorber have been measured. Initiating with a thin film photovoltaic device structure consisting of n-ZnO : Al / i-ZnO / Zn 1 - x Sn x O y ( ZTO ) / CZTSSe / Mo / SLG stack, a graded space charge region ( SCR ) and an inverted surface layer ( ISL ) were inserted between the buffer and the absorber. The cadmium ( Cd ) free ZTO buffer, a competitive substitute to the CdS buffer, significantly contributes to improve the open-circuit voltage, V oc without deteriorating the short-circuit current density, J sc . The optimized solar cell performance parameters including V oc , J sc , fill factor ( FF ) , and efficiency ( η ) were calculated from the current density-voltage curve, also known as J – V characteristic curve. The FF was determined as 73.17 % , which in turns, yields a higher energy conversion efficiency of 14.09 % .

Hayat Arbouz, 2024

This work deals with the simulation and optimization of a configured solar cell: FTO/PCBM/CsSnGeI... more This work deals with the simulation and optimization of a configured solar cell: FTO/PCBM/CsSnGeI 3 /PTAA/Au, whose three main layers are the absorber made of the inorganic and lead-free perovskite material CsSnGeI 3 with a band gap energy of 1.5 eV, surrounded by two carrier transport layers, the electron transport layer ETL of PCBM and the hole transport layer HTL of PTAA. An appropriate simulation model was detailed, with the subsequent aim of calculating the current-voltage curve and photovoltaic performance of the cell, taking into account the impact of varying certain physical parameters such as the defect density in the absorber and the defect density at the interface between the absorber and its surrounding ETL and HTL layers, which influence recombination in the absorber and at the interfaces, the architectural dimensions of the main layers, which have an impact on the amount of absorption, and the operating temperature, which varies photovoltaic performance. The results obtained showed that the optimized FTO/ZnSe/CsnGeI 3 /Spiro-OMeTAD/Au configured structure, whose optimized thicknesses of the main layers and optimized physical parameters are detailed in the work, achieved a power conversion efficiency of 17.7% with Voc=0.8865 V J ph = 24.43 mA/cm² and FF = 76.51%. In the study, this single cell was used as the top sub-cell in a tandem solar cell structure, once combined with a silicon bottom sub-cell and again with a CIGS sub-cell, and an efficiency of over 35 % was achieved. Simulation results for the single and tandem structures studied were compared with similar devices reported, and a good correlation was found. This work contributes to the development of efficient and non-toxic perovskite solar cell structures for single and tandem devices.

International journal of computational and experimental science and engineering, Feb 15, 2024

This work deals with the simulation and optimization of a single perovskite solar cell based on t... more This work deals with the simulation and optimization of a single perovskite solar cell based on the lead-free, inorganic perovskite absorber CsGeI3 with a bandgap energy of 1.6 eV. An appropriate simulation model was designed on the basis of the physical properties employed and carefully selected. Firstly, the study demonstrated the role of increasing the bulk defect density of the absorber as well as the interface defect density at the boundaries between the absorber and the carrier transport layers on increasing the photo-generated carrier recombination velocity, causing the collapse of the solar cell performance. The effect of layer thickness on photovoltaic parameters was also investigated. Next, various combinations of ETL and HTL electron and hole transport materials, with different bandgap alignments with the absorber were studied. The performance of the different structures was used to determine the optimum structure for obtaining the best results. An efficiency of 15.9% was obtained with the ETL-SnO2 /CsGeI3/HTL-SrCu2O2 architecture. Finally, the optimized structure was simulated in a 2T-tandem configuration in combination with the 1.3 eV-CsSnI3 based solar sub-cell. It was found that the efficiency could reach 25%. The aim of this work is to develop an efficient, lead-free and stable perovskite cell structure that could replace its hybrid perovskite counterpart and be used as a performing sub-cell in a tandem structure.

Journal of Engineering Research

Thermal Science and Engineering

In this paper, we modeled and simulated two tandem solar cell structures (a) and (b), in a two-te... more In this paper, we modeled and simulated two tandem solar cell structures (a) and (b), in a two-terminal configuration based on inorganic and lead-free absorber materials. The structures are composed of sub-cells already studied in our previous work, where we simulated the impact of defect density and recombination rate at the interfaces, as well as that of the thicknesses of the charge transport and absorber layers, on the photovoltaic performance. We also studied the performance resulting from the use of different materials for the electron and hole transport layers. The two structures studied include a bottom cell based on the perovskite material CsSnI3 with a band gap energy of 1.3 eV and a thickness of 1.5 µm. The first structure has an upper sub-cell based on the CsSnGeI3 material with an energy of 1.5 eV, while the second has an upper sub-cell made of Cs2TiBr6 with a band gap energy of 1.6 eV. The theoretical model used to evaluate the photocurrent density, current-voltage cha...

Applied Rheology

Perovskites are considered the most promising material for the latest generation of solar cells. ... more Perovskites are considered the most promising material for the latest generation of solar cells. However, due to the presence of lead in their composition, the development of non-toxic Perovskite cells has become an essential goal to enable their large-scale production. In this work, we have simulated, modeled and optimized the structure of a single solar cell that consists of a non-toxic cesium–tin–iodine CsSnI3 Perovskite absorber with a low band gap energy value of 1.3 eV, between TiO2 and PTAA materials as ETL and HTL layers, respectively. A simulation model describing the charge carrier processes and the effect of interface defect density is presented. Several structures based on alternative ETL and HTL materials are proposed. An optimal device structure is proposed based on the results obtained. An efficiency of 19.92% is obtained with V oc = 0.829 V, J sc = 30.68 mA/cm2 and FF = 73.33% using SnO2 and Spiro-OMeTAD as ETL and HTL materials. However, 29.22% is achieved using the...

Applied Rheology, 2023

Perovskites are considered the most promising material for the latest generation of solar cells. ... more Perovskites are considered the most promising material for the latest generation of solar cells. However, due to the presence of lead in their composition, the development of non-toxic Perovskite cells has become an essential goal to enable their large-scale production. In this work, we have simulated, modeled and optimized the structure of a single solar cell that consists of a nontoxic cesium-tin-iodine CsSnI 3 Perovskite absorber with a low band gap energy value of 1.3 eV, between TiO 2 and PTAA materials as ETL and HTL layers, respectively. A simulation model describing the charge carrier processes and the effect of interface defect density is presented. Several structures based on alternative ETL and HTL materials are proposed. An optimal device structure is proposed based on the results obtained. An efficiency of 19.92% is obtained with V oc = 0.829 V, J sc = 30.68 mA/cm 2 and FF = 73.33% using SnO 2 and Spiro-OMeTAD as ETL and HTL materials. However, 29.22% is achieved using the optimal structure as the bottom cell in a tandem configuration.

International Journal of Computational and Experimental Science and Engineering

In this paper, we simulated a double junction cell based on top CdS/Cu2ZnSnS4 cell, stacked on a ... more In this paper, we simulated a double junction cell based on top CdS/Cu2ZnSnS4 cell, stacked on a bottom CdS/Cu2ZnSnSe4 cell. We started by studying the perfomance of the bottom solar cell, based on the copper zinc tin selenide Cu2ZnSnSe4 (CZTSe) absorber. Then, we evaluated the photovoltaic parameters of the tandem cell at the optimized thickness of the copper zinc tin sulfide Cu2ZnSnS4 (CZTS) absorber of the top cell, where the top and bottom cells deliver the same photocurrent density. We achieved A maximum efficiency of 24.68% with an open circuit voltage of 1.33 V and a photocurrent density of 16.54 mA/cm² for the thicknesses 413.8 nm and 2 µm of CZTS and CZTSe absorbers, respectively. İn order to improve power conversion efficiency, light trapping effects was studied. The use of randomly textured top cell absorber allows the reduction of its thickness to 270 nm. An efficiency of 24.71% was then obtained. Finally, the effect of replacing the toxic CdS buffer absorber with the ZnS material was investigated.

Perovskites are considered the most promising material for the latest generation of solar cells. ... more Perovskites are considered the most promising material for the latest generation of solar cells. However, due to the presence of lead in their composition, the development of non-toxic Perovskite cells has become an essential goal to enable their large-scale production. In this work, we have simulated, modeled and optimized the structure of a single solar cell that consists of a nontoxic cesium-tin-iodine CsSnI 3 Perovskite absorber with a low band gap energy value of 1.3 eV, between TiO 2 and PTAA materials as ETL and HTL layers, respectively. A simulation model describing the charge carrier processes and the effect of interface defect density is presented. Several structures based on alternative ETL and HTL materials are proposed. An optimal device structure is proposed based on the results obtained. An efficiency of 19.92% is obtained with V oc = 0.829 V, J sc = 30.68 mA/cm 2 and FF = 73.33% using SnO 2 and Spiro-OMeTAD as ETL and HTL materials. However, 29.22% is achieved using the optimal structure as the bottom cell in a tandem configuration.

Perovskites are considered the most promising material for the latest generation of solar cells. ... more Perovskites are considered the most promising material for the latest generation of solar cells. However, due to the presence of lead in their composition, the development of non-toxic Perovskite cells has become an essential goal to enable their large-scale production. In this work, we have simulated, modeled and optimized the structure of a single solar cell that consists of a nontoxic cesium-tin-iodine CsSnI 3 Perovskite absorber with a low band gap energy value of 1.3 eV, between TiO 2 and PTAA materials as ETL and HTL layers, respectively. A simulation model describing the charge carrier processes and the effect of interface defect density is presented. Several structures based on alternative ETL and HTL materials are proposed. An optimal device structure is proposed based on the results obtained. An efficiency of 19.92% is obtained with V oc = 0.829 V, J sc = 30.68 mA/cm 2 and FF = 73.33% using SnO 2 and Spiro-OMeTAD as ETL and HTL materials. However, 29.22% is achieved using the optimal structure as the bottom cell in a tandem configuration.

2022 International Conference on Electrical, Computer, Communications and Mechatronics Engineering (ICECCME)

MRS Advances, 2016

ABSTRACTRecently, metal-halide perovskites have demonstrated an extraordinarily rapid advance in ... more ABSTRACTRecently, metal-halide perovskites have demonstrated an extraordinarily rapid advance in single junction cell efficiency to over 20%, while still offering potentially low costs. Since the bandgap is larger than the ideal single-junction value, perovskite-based tandem cells can theoretically offer even higher efficiencies. Instead, however, the record tandem cell performance in experiments to date has come in slightly below that of record single junctions, although slightly higher than the same single junctions. In this work, we consider both how this disconnect can be explained quantitatively, and then devise experimentally feasible, variance-aware approaches to address them. The first stage of our approach is based on reconfiguring dielectric front coatings to help reduce net reflected power and balance junction currents by reshaping the reflection peaks. This method could be applied to post-fabrication stage of perovskite/c-Si tandem cells, and also applicable to cell and ...

Recently, metal-halide perovskites have demonstrated an extraordinarily rapid advance in single j... more Recently, metal-halide perovskites have demonstrated an extraordinarily rapid advance in single junction cell efficiency to over 20%, while still offering potentially low costs. Since the bandgap is larger than the ideal single-junction value, perovskite-based tandem cells can theoretically offer even higher efficiencies. Instead, however, the record tandem cell performance in experiments to date has come in slightly below that of record single junctions, although slightly higher than the same single junctions. In this work, we consider both how this disconnect can be explained quantitatively, and then devise experimentally feasible, variance-aware approaches to address them. The first stage of our approach is based on reconfiguring dielectric front coatings to help reduce net reflected power and balance junction currents by reshaping the reflection peaks. This method could be applied to post-fabrication stage of perovskite/c-Si tandem cells, and also applicable to cell and module level structures. In the second stage of our approach, we can almost entirely eliminate Fresnel reflection by applying a conformal periodic light trapping structure. In the best case, a short circuit current (J sc) of 18.0 mA/cm 2 was achieved, after accounting for 4.8 mA/cm 2 of parasitic loss and 1.6 mA/cm 2 reflection loss. Further improvements may require a change in the baseline materials used in perovskite cells.

EasyChair, Jul 7, 2020

İn this paper a kestrite double junction tandem solar cell based on a CdS/Cu2ZnSnS4 top cell stac... more İn this paper a kestrite double junction tandem solar cell based on a CdS/Cu2ZnSnS4 top cell stacked on CdS/Cu2ZnSnSe4 bottom cell has been simulated. Firstly, the performance of the bottom cell was investigated against the variation of the CZTSe absorber thickness. The performance of the tandem cell was determined according to the optimized CZTS top cell absorber thickness for which current match condition of top and bottom sub cells is reached. A maximum efficiency of 24.68 % with 1.33 V open circuit voltage was achieved for 16.54 mA/cm² density of current, 413.8 nm thick CZTS top cell absorber and 2µm thick CZTSe bottom cell absorber. İn order to improve power conversion efficiency, light trapping effects have been investigated in this work. The use of back mirror in the bottom sub cell has led to a double absorption in the CZTSe layer allowing the increase of efficiency up to 24.8%. This work also demonstrated that the use of randomly textured top cell absorber allows the reduction of its thickness to 270 nm. An efficiency of 24.71% was than obtained. Finally, the effect of replacing the toxic CdS buffer absorber with the ZnS material was investigated.

International journal of computational and experimental science and engineering, Mar 31, 2022

In this paper, we simulated a double junction cell based on top CdS/Cu2ZnSnS4 cell, stacked on a ... more In this paper, we simulated a double junction cell based on top CdS/Cu2ZnSnS4 cell, stacked on a bottom CdS/Cu2ZnSnSe4 cell. We started by studying the perfomance of the bottom solar cell, based on the copper zinc tin selenide Cu2ZnSnSe4 (CZTSe) absorber. Then, we evaluated the photovoltaic parameters of the tandem cell at the optimized thickness of the copper zinc tin sulfide Cu2ZnSnS4 (CZTS) absorber of the top cell, where the top and bottom cells deliver the same photocurrent density. We achieved A maximum efficiency of 24.68% with an open circuit voltage of 1.33 V and a photocurrent density of 16.54 mA/cm² for the thicknesses 413.8 nm and 2 µm of CZTS and CZTSe absorbers, respectively. İn order to improve power conversion efficiency, light trapping effects was studied. The use of randomly textured top cell absorber allows the reduction of its thickness to 270 nm. An efficiency of 24.71% was then obtained. Finally, the effect of replacing the toxic CdS buffer absorber with the ZnS material was investigated.

In this work, a front graded band gap of CIGS absorber is simulated where a spatial variation of ... more In this work, a front graded band gap of CIGS absorber is simulated where a spatial variation of the band gap energy decreases from a maximum value E gmax at the limit of the junction to a minimum value E gmin at the vicinity of the back contact within the length of the CIGS layer. An effective absorption coefficient due to this variation was defined. It will be seen that this graded profile contributes to improve the open circuit voltage Voc owing to the effect of the created quasi-electrical field on the photo generated carriers which lead to an improvement of the efficiency. However, a reduction of the short current density J sc is noted. We also demonstrate that the absorber thickness has an impact on the parameters above mentioned. This simulation allowed us to optimize the grading profile which consists on E gmin , E gmax and the absorber thickness d in order to reach a desired significant improvement of V oc and efficiency.

2015 3rd International Renewable and Sustainable Energy Conference (IRSEC), 2015

In this work, we were interested about the study of modeling and simulation of a structure based ... more In this work, we were interested about the study of modeling and simulation of a structure based on In1-xGaxN/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorption of photons with wavelengths near to red. We had also studied a different parameters characterized the solar cell which served us to calculate the efficiency of photovoltaic conversion. For the In0.35Ga0.65N/GaN structure, we obtained efficiency around 23%. This study of structures allowed us to fabricate structures for solar cells based on multi-junction.

2015 3rd International Renewable and Sustainable Energy Conference (IRSEC), 2015

This work deals with the modeling and optimization of the CuInGaSe/CdS based structure for photov... more This work deals with the modeling and optimization of the CuInGaSe/CdS based structure for photovoltaic applications. We took into consideration the effect of the gallium concentration and the temperature on the strain, band gap energy, absorption and efficiency of the structure. It has been demonstrated that increasing the gallium concentration increases the ban gap energy, while increasing temperature decreases it. These two parameters vary the efficiency significantly. For x ¼ 30% and T ¼ 300 K, the band gap energy is equal to 1.15 eV with a deformation of 0.5% and efficiency around 20%. We have also found that at this value of the band gap energy the structure absorbs most of the incident photons. Then to achieve a reliable cell based on CuInGaSe/CdS it is adequate to find a compromise between the gallium concentration in the alloy, the temperature and the strain.

Alexandria Engineering Journal, 2017

Abstract We have investigated the simulation approach of a one-dimensional online simulator named... more Abstract We have investigated the simulation approach of a one-dimensional online simulator named A Device Emulation Program and Tool ( ADEPT 2.1 ) and the device performances of a thin film solar cell based on Cu 2 ZnSn ( S,Se ) 4 ( CZTSSe ) absorber have been measured. Initiating with a thin film photovoltaic device structure consisting of n-ZnO : Al / i-ZnO / Zn 1 - x Sn x O y ( ZTO ) / CZTSSe / Mo / SLG stack, a graded space charge region ( SCR ) and an inverted surface layer ( ISL ) were inserted between the buffer and the absorber. The cadmium ( Cd ) free ZTO buffer, a competitive substitute to the CdS buffer, significantly contributes to improve the open-circuit voltage, V oc without deteriorating the short-circuit current density, J sc . The optimized solar cell performance parameters including V oc , J sc , fill factor ( FF ) , and efficiency ( η ) were calculated from the current density-voltage curve, also known as J – V characteristic curve. The FF was determined as 73.17 % , which in turns, yields a higher energy conversion efficiency of 14.09 % .