bikash shrestha - Academia.edu (original) (raw)
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Pachhunga University College( A Only Constitutent College of Mizoram Central University)
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Papers by bikash shrestha
A simulation based comparative study of the polarization hysteresis of the ferroelectric capacito... more A simulation based comparative study of the polarization hysteresis of the ferroelectric capacitor using various ferroelectric models is presented. A 2-dimensional finite element device-level model was implemented using SILVACO's ATLAS device simulator to generate the polarization hysteresis characteristics for Au/Poly(vinylidene fluoride-trifluoroethylene)/Au metal-insulator-metal (MIM) device. Landau free energy expression for electric field in terms of polarization is also implemented in the MATLAB to produce the polarization hysteresis curve of polycrystalline ferroelectrics. The main drawback of these models was their inability to predict polarization saturation at the same electric field limits for which the experimental device was saturating. A new model for ferroelectric hysteresis based on curve fitting algorithm is derived that forces the polarization to be saturated at desired electric field. The MATLAB simulation of this model and the experimental hysteresis is compared which shows an excellent level of agreement.
We present a modeling and simulation based study for the polarization hysteresis of ferroelectric... more We present a modeling and simulation based study for the polarization hysteresis of ferroelectric polymers. A 2-dimensional finite element device-level model was implemented using SILVACO's ATLAS device simulator to generate the polarization hysteresis characteristics for the recently reported experimental data on Au/Poly(vinylidene fluoride-trifluoroethylene)/Au metal-insulator-metal (MIM) device. The simulated polarization dependence characteristics in the P(VDF-TrFE) thin-film were predicted from the parameters coercive field, remnant polarization and spontaneous polarization which were extracted from fitting to the experimental characteristics. The mathematical model which is referred by SILVACO for ATLAS's ferroelectric model was implemented in MATLAB to generate the hysteresis curve. Landau-Devonshire expression for electric field in terms of polarization is also implemented in the MATLAB to produce the polarization hysteresis curve of mono-crystalline and polycrystalline ferroelectrics. The polarization hysteresis characteristics obtained from the ATLAS and MATLAB simulations were in good agreement with the reported experimental hysteresis characteristics.
Saarc Journal of Tuberculosis, Lung Diseases and Hiv/aids, 2010
A simulation based comparative study of the polarization hysteresis of the ferroelectric capacito... more A simulation based comparative study of the polarization hysteresis of the ferroelectric capacitor using various ferroelectric models is presented. A 2-dimensional finite element device-level model was implemented using SILVACO's ATLAS device simulator to generate the polarization hysteresis characteristics for Au/Poly(vinylidene fluoride-trifluoroethylene)/Au metal-insulator-metal (MIM) device. Landau free energy expression for electric field in terms of polarization is also implemented in the MATLAB to produce the polarization hysteresis curve of polycrystalline ferroelectrics. The main drawback of these models was their inability to predict polarization saturation at the same electric field limits for which the experimental device was saturating. A new model for ferroelectric hysteresis based on curve fitting algorithm is derived that forces the polarization to be saturated at desired electric field. The MATLAB simulation of this model and the experimental hysteresis is compared which shows an excellent level of agreement.
We present a modeling and simulation based study for the polarization hysteresis of ferroelectric... more We present a modeling and simulation based study for the polarization hysteresis of ferroelectric polymers. A 2-dimensional finite element device-level model was implemented using SILVACO's ATLAS device simulator to generate the polarization hysteresis characteristics for the recently reported experimental data on Au/Poly(vinylidene fluoride-trifluoroethylene)/Au metal-insulator-metal (MIM) device. The simulated polarization dependence characteristics in the P(VDF-TrFE) thin-film were predicted from the parameters coercive field, remnant polarization and spontaneous polarization which were extracted from fitting to the experimental characteristics. The mathematical model which is referred by SILVACO for ATLAS's ferroelectric model was implemented in MATLAB to generate the hysteresis curve. Landau-Devonshire expression for electric field in terms of polarization is also implemented in the MATLAB to produce the polarization hysteresis curve of mono-crystalline and polycrystalline ferroelectrics. The polarization hysteresis characteristics obtained from the ATLAS and MATLAB simulations were in good agreement with the reported experimental hysteresis characteristics.
Saarc Journal of Tuberculosis, Lung Diseases and Hiv/aids, 2010