davood raoufi - Academia.edu (original) (raw)

Papers by davood raoufi

In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation metho... more In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation method on float glass substrates at room temperature (RT). The surface morphology and dynamic scaling behavior of the films were studied by atomic force microscopy (AFM). It was found that average surface roughness values decreased as the film thickness increased from 100 nm to 350 nm. Fractal geometry and statistical physics techniques have been used to study a variety of irregular films within a common framework of the variance thickness. The Hurst exponent H and growth exponent  for ITO thin films were determined to be 0.73  0.01 and 0.078, respectively. Based on these results, we suggest that the growth of ITO thin films can be described by the combination of the Edwards-Wilkinson equation and Mullins diffusion equation.

Applied Surface Science, 2008

In this work, we developed the multifractality and its formalism to investigate the surface topog... more In this work, we developed the multifractality and its formalism to investigate the surface topographies of ITO thin films prepared by electron beam deposition method for various annealing temperatures from their atomic force microscopy (AFM) images. Multifractal analysis shows that the ...

Applied Surface Science, 2007

In this study, the electron beam evaporation method is used to generate an indium tin oxide (ITO)... more In this study, the electron beam evaporation method is used to generate an indium tin oxide (ITO) thin film on a glass substrate at room temperature. The surface characteristics of this ITO thin film are then investigated by means of an AFM (atomic force microscopy) method. ...

Physica B: Condensed Matter, 2012

In this study, indium tin oxide (ITO) thin films were prepared by electron beam deposition method... more In this study, indium tin oxide (ITO) thin films were prepared by electron beam deposition method on glass substrates at room temperature (RT). Surface morphology characterization of ITO thin films, before and after annealing at 500° C, were investigated by analyzing the ...

Journal of Theoretical and Applied Physics, 2013

In this work, we developed the rescaled range method and its formalism to investigate the surface... more In this work, we developed the rescaled range method and its formalism to investigate the surface morphology dynamics of indium tin oxide (ITO) thin films. The dynamic scaling behavior of grown ITO thin films, which were prepared by electron beam deposition method on float glass substrates at room temperature, was studied through atomic force microscopy (AFM). AFM data indicated that the average surface roughness values of the films decreased as the film thickness increased from 100 to 250 nm. Based on fractal concept and statistical physics techniques, the irregularities of the ITO films were analyzed. The roughness exponent H and the growth exponent β for ITO films were determined to be 0.71 ± 0.01 and 0.11 ± 0.01, respectively. The fractal analysis reveals that the value of the fractal dimension D f (D f = 3 − H) falls within the range 2.29 to 2.24 depending upon the films thickness. These results show that the growth process of the films can be described by the combination of Edwards-Wilkinson and Mullins diffusion models.

Applied Surface Science, 2009

CdO film has been deposited by sol-gel spin coating method on the glass substrate and then the fi... more CdO film has been deposited by sol-gel spin coating method on the glass substrate and then the film has been annealed at 400, 500, 600 C for 1 h. Effect of annealing temperature on the structural and optical properties of the film has been investigated. The crystal structure and orientation of the as-grown and annealed CdO films have been investigated by X-ray diffraction method. Annealed CdO films are polycrystalline with (111) preferential orientation. The information on strain and grain size is obtained from the full width-athalf-maximum (FWHM) of the diffraction peaks. Texture coefficient and lattice constant have been calculated. The surface morphology of the films has been analyzed. The optical band gap value decreased with increasing the annealing temperatures.

Physica B: Condensed Matter, 2012

In this study, indium tin oxide (ITO) thin films were prepared by electron beam deposition method... more In this study, indium tin oxide (ITO) thin films were prepared by electron beam deposition method on glass substrates at room temperature (RT). Surface morphology characterization of ITO thin films, before and after annealing at 500° C, were investigated by analyzing the ...

Journal of Materials Chemistry A

Highly efficient new binder-free bimetallic metal–organic framework (bi-MMOF) symmetric supercapa... more Highly efficient new binder-free bimetallic metal–organic framework (bi-MMOF) symmetric supercapacitors were fabricated.

Materials Chemistry and Physics

Materials Research Express

Materials Research Express

Materials Research Express

Advances in Materials Physics and Chemistry

In this study, Indium Tin Oxide (ITO) thin films were deposited by electron beam evaporation on w... more In this study, Indium Tin Oxide (ITO) thin films were deposited by electron beam evaporation on white glass substrates with thicknesses of about 50, 100 and 170 nm. We investigated structural properties by X-ray Diffraction (XRD) and X-ray reflectivity (XRR). The results showed that ITO thin films have a crystalline structure with a domain that increases in size with increasing thickness. For uniform electron density, as the thin film roughness increases, reflectivity curve slope also increases. Also thinner film has more fringes than thicker film. The roughness determines how quickly the reflected signal decays. XRR technique is more suitable for very thin films, approximately 20 nm and less.

Semiconductor Science and Technology

The Journal of Physical Chemistry C, 2016

Optics and Photonics Society of Iran, Mar 15, 2015

In this paper Indium Tin Oxide (ITO) thin films have been prepared on glass substrate by electron... more In this paper Indium Tin Oxide (ITO) thin films have been prepared on glass substrate by electron beam evaporation method. Then we use the X-ray reflectivity technique (XRR), and plot logarithmic chart of the intensity versus 2θ (θ is the incidence angle of x-ray). So, using the XRR data we compute the thickness, density and roughness of the ITO thin films. The results showed good agreement with AFM and transmittance spectra on UV-VIS-NIR range.

The European Physical Journal Applied Physics, 2015

Electronic Materials Letters, 2015

In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation metho... more In this study, indium tin oxide (ITO) thin films were prepared by electron beam evaporation method on float glass substrates at room temperature (RT). The surface morphology and dynamic scaling behavior of the films were studied by atomic force microscopy (AFM). It was found that average surface roughness values decreased as the film thickness increased from 100 nm to 350 nm. Fractal geometry and statistical physics techniques have been used to study a variety of irregular films within a common framework of the variance thickness. The Hurst exponent H and growth exponent  for ITO thin films were determined to be 0.73  0.01 and 0.078, respectively. Based on these results, we suggest that the growth of ITO thin films can be described by the combination of the Edwards-Wilkinson equation and Mullins diffusion equation.

Applied Surface Science, 2008

In this work, we developed the multifractality and its formalism to investigate the surface topog... more In this work, we developed the multifractality and its formalism to investigate the surface topographies of ITO thin films prepared by electron beam deposition method for various annealing temperatures from their atomic force microscopy (AFM) images. Multifractal analysis shows that the ...

Applied Surface Science, 2007

In this study, the electron beam evaporation method is used to generate an indium tin oxide (ITO)... more In this study, the electron beam evaporation method is used to generate an indium tin oxide (ITO) thin film on a glass substrate at room temperature. The surface characteristics of this ITO thin film are then investigated by means of an AFM (atomic force microscopy) method. ...

Physica B: Condensed Matter, 2012

In this study, indium tin oxide (ITO) thin films were prepared by electron beam deposition method... more In this study, indium tin oxide (ITO) thin films were prepared by electron beam deposition method on glass substrates at room temperature (RT). Surface morphology characterization of ITO thin films, before and after annealing at 500° C, were investigated by analyzing the ...

Journal of Theoretical and Applied Physics, 2013

In this work, we developed the rescaled range method and its formalism to investigate the surface... more In this work, we developed the rescaled range method and its formalism to investigate the surface morphology dynamics of indium tin oxide (ITO) thin films. The dynamic scaling behavior of grown ITO thin films, which were prepared by electron beam deposition method on float glass substrates at room temperature, was studied through atomic force microscopy (AFM). AFM data indicated that the average surface roughness values of the films decreased as the film thickness increased from 100 to 250 nm. Based on fractal concept and statistical physics techniques, the irregularities of the ITO films were analyzed. The roughness exponent H and the growth exponent β for ITO films were determined to be 0.71 ± 0.01 and 0.11 ± 0.01, respectively. The fractal analysis reveals that the value of the fractal dimension D f (D f = 3 − H) falls within the range 2.29 to 2.24 depending upon the films thickness. These results show that the growth process of the films can be described by the combination of Edwards-Wilkinson and Mullins diffusion models.

Applied Surface Science, 2009

CdO film has been deposited by sol-gel spin coating method on the glass substrate and then the fi... more CdO film has been deposited by sol-gel spin coating method on the glass substrate and then the film has been annealed at 400, 500, 600 C for 1 h. Effect of annealing temperature on the structural and optical properties of the film has been investigated. The crystal structure and orientation of the as-grown and annealed CdO films have been investigated by X-ray diffraction method. Annealed CdO films are polycrystalline with (111) preferential orientation. The information on strain and grain size is obtained from the full width-athalf-maximum (FWHM) of the diffraction peaks. Texture coefficient and lattice constant have been calculated. The surface morphology of the films has been analyzed. The optical band gap value decreased with increasing the annealing temperatures.

Physica B: Condensed Matter, 2012

In this study, indium tin oxide (ITO) thin films were prepared by electron beam deposition method... more In this study, indium tin oxide (ITO) thin films were prepared by electron beam deposition method on glass substrates at room temperature (RT). Surface morphology characterization of ITO thin films, before and after annealing at 500° C, were investigated by analyzing the ...

Journal of Materials Chemistry A

Highly efficient new binder-free bimetallic metal–organic framework (bi-MMOF) symmetric supercapa... more Highly efficient new binder-free bimetallic metal–organic framework (bi-MMOF) symmetric supercapacitors were fabricated.

Materials Chemistry and Physics

Materials Research Express

Materials Research Express

Materials Research Express

Advances in Materials Physics and Chemistry

In this study, Indium Tin Oxide (ITO) thin films were deposited by electron beam evaporation on w... more In this study, Indium Tin Oxide (ITO) thin films were deposited by electron beam evaporation on white glass substrates with thicknesses of about 50, 100 and 170 nm. We investigated structural properties by X-ray Diffraction (XRD) and X-ray reflectivity (XRR). The results showed that ITO thin films have a crystalline structure with a domain that increases in size with increasing thickness. For uniform electron density, as the thin film roughness increases, reflectivity curve slope also increases. Also thinner film has more fringes than thicker film. The roughness determines how quickly the reflected signal decays. XRR technique is more suitable for very thin films, approximately 20 nm and less.

Semiconductor Science and Technology

The Journal of Physical Chemistry C, 2016

Optics and Photonics Society of Iran, Mar 15, 2015

In this paper Indium Tin Oxide (ITO) thin films have been prepared on glass substrate by electron... more In this paper Indium Tin Oxide (ITO) thin films have been prepared on glass substrate by electron beam evaporation method. Then we use the X-ray reflectivity technique (XRR), and plot logarithmic chart of the intensity versus 2θ (θ is the incidence angle of x-ray). So, using the XRR data we compute the thickness, density and roughness of the ITO thin films. The results showed good agreement with AFM and transmittance spectra on UV-VIS-NIR range.

The European Physical Journal Applied Physics, 2015

Electronic Materials Letters, 2015