majeed foad - Academia.edu (original) (raw)

Papers by majeed foad

Research paper thumbnail of Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation

Applied physics …, 2006

... R.Carboni, G.Pacchioni, M.Fanciulli, A.Giglia, M.Pedio, N.Mahne, S.Nannarone, and F.Boscherin... more ... R.Carboni, G.Pacchioni, M.Fanciulli, A.Giglia, M.Pedio, N.Mahne, S.Nannarone, and F.Boscherini, “Coordination of boron and phosphorous in ... J.Zhu, TDdella Rubia, LHYang, and C.Mailhiot, “Ab initio pseudopotential calculations of B diffusion and pairing in Si,” Phys. Rev. ...

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Research paper thumbnail of Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)

AIP Conference …, 2008

A study of doping the pMOS Lightly Doped Drain (LDD) by Plasma Immersion Ion Implantation (P3i) w... more A study of doping the pMOS Lightly Doped Drain (LDD) by Plasma Immersion Ion Implantation (P3i) with BF3 is presented which demonstrates a better transistor performance compared to standard beam line Ion Implantation (I∕I). The benefit of P3i comes from the broad ...

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Research paper thumbnail of Large enhancement of boron solubility in silicon due to biaxial stress

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Research paper thumbnail of Method for enhancing the solubility of boron and indium in silicon

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method invo... more A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be

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Research paper thumbnail of Mechanism of boron diffusion in silicon: An ab initio and kinetic Monte Carlo study

Physical review letters, 1999

An exhaustive first-principles study of the energetics of B-Si interstitial complexes of various ... more An exhaustive first-principles study of the energetics of B-Si interstitial complexes of various configurations and charge states is used to elucidate the diffusion mechanism of B in Si. Total energy calculations and molecular dynamics simulations show that B diffuses by an interstitialcy mechanism. ...

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Research paper thumbnail of A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method invol... more A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be

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Research paper thumbnail of Range and damage distributions in ultra-low energy boron implantation into silicon

Journal of Stroke & Cerebrovascular Diseases, 1996

An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical... more An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical techniques to study the range and damage distributions of B+ ions implanted at normal incidence into Si(100) samples held at room temperature. Samples were implanted over a dose range from 1E14 ions/cm2 with and without a surface oxide layer and those implanted at 1 keV and below were capped with a nominal 20 nm layer of 28Si by ion beam deposition in situ in order to produce an oxygen equilibration layer for subsequent secondary ion mass spectrometry depth profiling. The samples were analysed using secondary ion mass spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, spreading resistance profiling and high resolution, cross section transmission electron microscopy to obtain the range and damage distributions and junction depths. The general observations were that channelling occurs at all energies studied, and that the relationship between the damage and range dist...

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Research paper thumbnail of Ultra-Shallow Junctions for the 65 nm Node Based on Defect and Stress Engineering

… Synthetic Structures and …, 2005

Ultra-Shallow Junctions for the 65 nm Node Based on Defect and Stress Engineering. Victor Moroz, ... more Ultra-Shallow Junctions for the 65 nm Node Based on Defect and Stress Engineering. Victor Moroz, Majeed Foad, Houda Graoui, Faran Nouri, Dipu Pramanik, Susan Felch Semiconductor Defect Engineering--Materials, Synthetic Structures and Devices 864, 113-118, 3/2005. ...

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[Research paper thumbnail of Comparison of indium metrology using LEXES and SIMS [semiconductor doping](https://a.academia-assets.com/images/blank-paper.jpg)

SCS 2003 International Symposium on Signals Circuits and Systems Proceedings (Cat No 03EX720) IIT-02, 2002

There has been increasing interest in using Indium (In+) as the channel and substrate dopant in p... more There has been increasing interest in using Indium (In+) as the channel and substrate dopant in place of the lighter boron atom. Indium is a heavier atom and hence yields a more controllable and steeper dopant profile, which is extremely important to reduce short channel effects (SCE) in modem MOSFETs. Studies have been done on using In as the channel dopant and devices with improved SCE have been reported. In+ has also been studied as a halo implant species to enhance the short channel performance of devices. However, indium shows enhanced diffusivity in the presence of some source of interstitials. To this effect, work has been done to study the diffusion of In in silicon under neutral and oxidizing ambients. In this paper, we study and present experimental results on the indium diffusion behavior and dose loss as a function of different damage structures and anneal conditions, utilizing low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectro...

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Research paper thumbnail of Shallow junction formation by decaborane molecular ion implantation

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000

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Research paper thumbnail of New technique for dry etch damage assessment of semiconductors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993

ABSTRACT

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Research paper thumbnail of Photoresist effects on wafer charging control: current-voltage characteristics measured with Charm-2 monitors during high-current As/sup +/ implantation

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)

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Research paper thumbnail of Exploring the limits of pre-amorphization implants on controlling channeling and diffusion of low energy B implants and ultra shallow junction formation

Current Opinion in Chemical Biology, 2000

Reducing channeling of B implants and transient enhanced diffusion (TED) is very critical for the... more Reducing channeling of B implants and transient enhanced diffusion (TED) is very critical for the formation of ultra shallow junctions required for deep sub-micron devices. As the ion energy required for junction formation is reduced (<5 keV) due to device shrinking, the use of high tilt angle (typically 7-10 deg) becomes ineffective in suppressing channeling. The formation of a thin

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Research paper thumbnail of Method of Ion Implantation

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Research paper thumbnail of Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs

International Electron Devices Meeting. IEDM Technical Digest

Figure 2.(a) A PROPHET simulation of a Lg =150nm nMOSFET illustrating the intended junction profi... more Figure 2.(a) A PROPHET simulation of a Lg =150nm nMOSFET illustrating the intended junction profile. (b) An SCM micrograph revealing the doping profilein the corresponding device fab-ricated as described in the text. The device was biased at -0.5V relative to the tip. The ...

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Research paper thumbnail of Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions for

2009 International Workshop on Junction Technology, 2009

In this work, studies carried out with several techniques on As junctions activated by solid phas... more In this work, studies carried out with several techniques on As junctions activated by solid phase epitaxial regrowth (SPER), rapid thermal process (RTP) spike annealing and laser sub-melt annealing (LA) are summarized. In particular, the sheet resistance (Rs) values and Hall effect measured active carrier doses are interpreted after investigation by secondary ion mass spectrometry (SIMS) and extended x-ray absorption

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Research paper thumbnail of B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2006

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Research paper thumbnail of B clustering in amorphous Si

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2008

ABSTRACT The authors have investigated ultrashallow p+ /n-junction formation by solid-phase epita... more ABSTRACT The authors have investigated ultrashallow p+ /n-junction formation by solid-phase epitaxy, by using x-ray absorption near-edge spectroscopy �XANES� measurements at the B K edge. The authors demonstrate that B clustering occurs during the very early stages of annealing-induced Si recrystallization, i.e., when B is still in the amorphous matrix. After complete regrowth, the local structure around B remains the same as in the amorphous phase, implying that B clusters are transferred to the crystalline structure. The XANES structure are assigned to B–B sp2 bonds that are present in B clusters with two or more B atoms. Boron clustering and diffusion are further investigated by means of concentration profile analysis of ad hoc amorphous on insulator structures that evidences a clear concentration threshold for clustering and a concentration dependent B diffusion.

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Research paper thumbnail of Semconductor Material and Method for Enhancing Solubility of a Dopant Theren Cross-Reference to Related Application

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Research paper thumbnail of Modeling of ultra-low energy boron implantation in silicon

International Electron Devices Meeting. IEDM Technical Digest, 1997

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Research paper thumbnail of Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation

Applied physics …, 2006

... R.Carboni, G.Pacchioni, M.Fanciulli, A.Giglia, M.Pedio, N.Mahne, S.Nannarone, and F.Boscherin... more ... R.Carboni, G.Pacchioni, M.Fanciulli, A.Giglia, M.Pedio, N.Mahne, S.Nannarone, and F.Boscherini, “Coordination of boron and phosphorous in ... J.Zhu, TDdella Rubia, LHYang, and C.Mailhiot, “Ab initio pseudopotential calculations of B diffusion and pairing in Si,” Phys. Rev. ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)

AIP Conference …, 2008

A study of doping the pMOS Lightly Doped Drain (LDD) by Plasma Immersion Ion Implantation (P3i) w... more A study of doping the pMOS Lightly Doped Drain (LDD) by Plasma Immersion Ion Implantation (P3i) with BF3 is presented which demonstrates a better transistor performance compared to standard beam line Ion Implantation (I∕I). The benefit of P3i comes from the broad ...

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Research paper thumbnail of Large enhancement of boron solubility in silicon due to biaxial stress

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Method for enhancing the solubility of boron and indium in silicon

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method invo... more A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be

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Research paper thumbnail of Mechanism of boron diffusion in silicon: An ab initio and kinetic Monte Carlo study

Physical review letters, 1999

An exhaustive first-principles study of the energetics of B-Si interstitial complexes of various ... more An exhaustive first-principles study of the energetics of B-Si interstitial complexes of various configurations and charge states is used to elucidate the diffusion mechanism of B in Si. Total energy calculations and molecular dynamics simulations show that B diffuses by an interstitialcy mechanism. ...

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Research paper thumbnail of A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method invol... more A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be

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Research paper thumbnail of Range and damage distributions in ultra-low energy boron implantation into silicon

Journal of Stroke & Cerebrovascular Diseases, 1996

An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical... more An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical techniques to study the range and damage distributions of B+ ions implanted at normal incidence into Si(100) samples held at room temperature. Samples were implanted over a dose range from 1E14 ions/cm2 with and without a surface oxide layer and those implanted at 1 keV and below were capped with a nominal 20 nm layer of 28Si by ion beam deposition in situ in order to produce an oxygen equilibration layer for subsequent secondary ion mass spectrometry depth profiling. The samples were analysed using secondary ion mass spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, spreading resistance profiling and high resolution, cross section transmission electron microscopy to obtain the range and damage distributions and junction depths. The general observations were that channelling occurs at all energies studied, and that the relationship between the damage and range dist...

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Research paper thumbnail of Ultra-Shallow Junctions for the 65 nm Node Based on Defect and Stress Engineering

… Synthetic Structures and …, 2005

Ultra-Shallow Junctions for the 65 nm Node Based on Defect and Stress Engineering. Victor Moroz, ... more Ultra-Shallow Junctions for the 65 nm Node Based on Defect and Stress Engineering. Victor Moroz, Majeed Foad, Houda Graoui, Faran Nouri, Dipu Pramanik, Susan Felch Semiconductor Defect Engineering--Materials, Synthetic Structures and Devices 864, 113-118, 3/2005. ...

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[Research paper thumbnail of Comparison of indium metrology using LEXES and SIMS [semiconductor doping](https://a.academia-assets.com/images/blank-paper.jpg)

SCS 2003 International Symposium on Signals Circuits and Systems Proceedings (Cat No 03EX720) IIT-02, 2002

There has been increasing interest in using Indium (In+) as the channel and substrate dopant in p... more There has been increasing interest in using Indium (In+) as the channel and substrate dopant in place of the lighter boron atom. Indium is a heavier atom and hence yields a more controllable and steeper dopant profile, which is extremely important to reduce short channel effects (SCE) in modem MOSFETs. Studies have been done on using In as the channel dopant and devices with improved SCE have been reported. In+ has also been studied as a halo implant species to enhance the short channel performance of devices. However, indium shows enhanced diffusivity in the presence of some source of interstitials. To this effect, work has been done to study the diffusion of In in silicon under neutral and oxidizing ambients. In this paper, we study and present experimental results on the indium diffusion behavior and dose loss as a function of different damage structures and anneal conditions, utilizing low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectro...

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Research paper thumbnail of Shallow junction formation by decaborane molecular ion implantation

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000

Bookmarks Related papers MentionsView impact

Research paper thumbnail of New technique for dry etch damage assessment of semiconductors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993

ABSTRACT

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Photoresist effects on wafer charging control: current-voltage characteristics measured with Charm-2 monitors during high-current As/sup +/ implantation

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Exploring the limits of pre-amorphization implants on controlling channeling and diffusion of low energy B implants and ultra shallow junction formation

Current Opinion in Chemical Biology, 2000

Reducing channeling of B implants and transient enhanced diffusion (TED) is very critical for the... more Reducing channeling of B implants and transient enhanced diffusion (TED) is very critical for the formation of ultra shallow junctions required for deep sub-micron devices. As the ion energy required for junction formation is reduced (<5 keV) due to device shrinking, the use of high tilt angle (typically 7-10 deg) becomes ineffective in suppressing channeling. The formation of a thin

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Method of Ion Implantation

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs

International Electron Devices Meeting. IEDM Technical Digest

Figure 2.(a) A PROPHET simulation of a Lg =150nm nMOSFET illustrating the intended junction profi... more Figure 2.(a) A PROPHET simulation of a Lg =150nm nMOSFET illustrating the intended junction profile. (b) An SCM micrograph revealing the doping profilein the corresponding device fab-ricated as described in the text. The device was biased at -0.5V relative to the tip. The ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing instructions for

2009 International Workshop on Junction Technology, 2009

In this work, studies carried out with several techniques on As junctions activated by solid phas... more In this work, studies carried out with several techniques on As junctions activated by solid phase epitaxial regrowth (SPER), rapid thermal process (RTP) spike annealing and laser sub-melt annealing (LA) are summarized. In particular, the sheet resistance (Rs) values and Hall effect measured active carrier doses are interpreted after investigation by secondary ion mass spectrometry (SIMS) and extended x-ray absorption

Bookmarks Related papers MentionsView impact

Research paper thumbnail of B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2006

Bookmarks Related papers MentionsView impact

Research paper thumbnail of B clustering in amorphous Si

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2008

ABSTRACT The authors have investigated ultrashallow p+ /n-junction formation by solid-phase epita... more ABSTRACT The authors have investigated ultrashallow p+ /n-junction formation by solid-phase epitaxy, by using x-ray absorption near-edge spectroscopy �XANES� measurements at the B K edge. The authors demonstrate that B clustering occurs during the very early stages of annealing-induced Si recrystallization, i.e., when B is still in the amorphous matrix. After complete regrowth, the local structure around B remains the same as in the amorphous phase, implying that B clusters are transferred to the crystalline structure. The XANES structure are assigned to B–B sp2 bonds that are present in B clusters with two or more B atoms. Boron clustering and diffusion are further investigated by means of concentration profile analysis of ad hoc amorphous on insulator structures that evidences a clear concentration threshold for clustering and a concentration dependent B diffusion.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Semconductor Material and Method for Enhancing Solubility of a Dopant Theren Cross-Reference to Related Application

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Modeling of ultra-low energy boron implantation in silicon

International Electron Devices Meeting. IEDM Technical Digest, 1997

Bookmarks Related papers MentionsView impact