jose jimenes - Academia.edu (original) (raw)

Papers by jose jimenes

HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostruc... more HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostructure HEMT devices after life time testing. A strong relationship between electrical degradation and defects formation near the gate edge was observed. Detailed features of physical damages correlated with the degradation mechanism were discussed.

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop], 2008

HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostruc... more HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostructure HEMT devices after life time testing. A strong relationship between electrical degradation and defects formation near the gate edge was observed. Detailed features of physical damages correlated with the degradation mechanism were discussed.

HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostruc... more HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostructure HEMT devices after life time testing. A strong relationship between electrical degradation and defects formation near the gate edge was observed. Detailed features of physical damages correlated with the degradation mechanism were discussed.

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop], 2008

HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostruc... more HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostructure HEMT devices after life time testing. A strong relationship between electrical degradation and defects formation near the gate edge was observed. Detailed features of physical damages correlated with the degradation mechanism were discussed.