Rasool mousavi - Academia.edu (original) (raw)

Papers by Rasool mousavi

Journal of the European Ceramic Society, 2019

Properties such as high hardness, low density, and high elastic modulus have made SiC ceramics pr... more Properties such as high hardness, low density, and high elastic modulus have made SiC ceramics proper choices for a variety of industrial applications. However, disadvantages such as low sinterability, and low fracture toughness have limited the fabrication of these ceramics. Past researches show that the use of Al2O3-Y2O3 additives play an important role in improving the sinterability and the properties of the composites. The use of oxide, carbide, nitride and boride additives results in improved sinterability, physical and mechanical properties. The investigations show that the microstructure, porosities, amount of additives, reaction of additives with the matrix, grain size and, finally, the sintering temperature are the most important factors affecting the properties of SiC ceramics. In this paper, the effect of using various additives, the sintering temperature and the annealing heat treatment on sinterability, microstructure and properties of the SiC matrix composites fabricated by pressureless sintering method have been investigated.

AEU - International Journal of Electronics and Communications, 2020

Abstract In this paper, a novel method has been proposed to implement a Carbon Nanotube Field-Eff... more Abstract In this paper, a novel method has been proposed to implement a Carbon Nanotube Field-Effect Transistor (CNTFET) based with 8T SRAM cells 32 at nm technology and triple-value transistor memory cell. Instead of using a read buffer and a transmission gate, we have used a tri-state buffer, this reduces cell standby power. We have also used dynamic diode connection to implement the standard tri-state inverter (STI) gate instead of a transistor with a static diode connection. Then, the proposed memory cell, unlike the memory cell, is off while holding data 0 and 2 off, has been compared with a memory cell, simulation results using the HSPICE circuit simulator show that the cell stability has increased by 23.03% due to the use of dynamic diode connection transistors and, 14.36% of data storage power consumption “0″ and 32.15% data storage power consumption ”2″ is reduced due to the use of tri-state buffer. Also, the proposed memory cell provides a good SNM in a supply voltage range from 0 to 0.9 V, and also this scheme has a stable read and writes stability due to the variation diameter between the smallest squared inscribed between two VTC curves in the butterfly diagram.

Journal of the European Ceramic Society, 2019

Properties such as high hardness, low density, and high elastic modulus have made SiC ceramics pr... more Properties such as high hardness, low density, and high elastic modulus have made SiC ceramics proper choices for a variety of industrial applications. However, disadvantages such as low sinterability, and low fracture toughness have limited the fabrication of these ceramics. Past researches show that the use of Al2O3-Y2O3 additives play an important role in improving the sinterability and the properties of the composites. The use of oxide, carbide, nitride and boride additives results in improved sinterability, physical and mechanical properties. The investigations show that the microstructure, porosities, amount of additives, reaction of additives with the matrix, grain size and, finally, the sintering temperature are the most important factors affecting the properties of SiC ceramics. In this paper, the effect of using various additives, the sintering temperature and the annealing heat treatment on sinterability, microstructure and properties of the SiC matrix composites fabricated by pressureless sintering method have been investigated.

AEU - International Journal of Electronics and Communications, 2020

Abstract In this paper, a novel method has been proposed to implement a Carbon Nanotube Field-Eff... more Abstract In this paper, a novel method has been proposed to implement a Carbon Nanotube Field-Effect Transistor (CNTFET) based with 8T SRAM cells 32 at nm technology and triple-value transistor memory cell. Instead of using a read buffer and a transmission gate, we have used a tri-state buffer, this reduces cell standby power. We have also used dynamic diode connection to implement the standard tri-state inverter (STI) gate instead of a transistor with a static diode connection. Then, the proposed memory cell, unlike the memory cell, is off while holding data 0 and 2 off, has been compared with a memory cell, simulation results using the HSPICE circuit simulator show that the cell stability has increased by 23.03% due to the use of dynamic diode connection transistors and, 14.36% of data storage power consumption “0″ and 32.15% data storage power consumption ”2″ is reduced due to the use of tri-state buffer. Also, the proposed memory cell provides a good SNM in a supply voltage range from 0 to 0.9 V, and also this scheme has a stable read and writes stability due to the variation diameter between the smallest squared inscribed between two VTC curves in the butterfly diagram.