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Annales Des Télécommunications, 1993
In the last few years we have seen a relevant transformation of the telephone network, with an ex... more In the last few years we have seen a relevant transformation of the telephone network, with an extensive digitalization of the voice transmission and switching able now to reach the subscriber. In the meanwhile various techniques have been implemented to exploit data transmission in an environment designed for voice only. This paper will review this important transformation and its future
The following paper would like to give an idea of the present status of silicon technologies used... more The following paper would like to give an idea of the present status of silicon technologies used for the analog front-end of communication systems. The frequency spectrum of application is that of the mobile communications standards (up to few GigaHertz). A short description of the available active devices (CMOS, SiGe BJT, DMOS) will be presented. In addition some information regarding the feasibility of good quality passive components (Inductors, Capacitors, Varactors, Resistors) will be given.
The continuous progress in semiconductor and module technology has indubitably fueled in the past... more The continuous progress in semiconductor and module technology has indubitably fueled in the past years,together with the system design and algorithms,the telecommunication and wireless evolution characterized by a growing demand of new services and functions,the continuous decrease of mobile terminal costs,longer battery duration.The paper gives a brief description on the state of art and on going developments of key submicron RF Silicon technologies employed within the Wireless equipment, mainly taking into account the 2.5-3G cellular-phone and emerging WLAN applications as the natural interconnection of wireless communications with Internet. While high density CMOS evolution still represents the core technology development also for RF dedicated Silicon, Silicon-Germanium or Silicon Germanium Carbon processes,differentiating factors both in term of overall performances and costs rely now also on availability of integrated good quality passives,RF MEMS as well as RF odules and cost...
Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Domestic Animal Endocrinology, 1982
Recent progress in bipolar technologies, mainly based on ion implanted structures, has led to the... more Recent progress in bipolar technologies, mainly based on ion implanted structures, has led to the integration of high current devices together with highly packed control electronics in a 50V monochip. An integrated circuit, which is able to drive with high efficiency various inductive loads for idustrial applications, is presented.
European Neuropsychopharmacology, 1991
Solid-State Circuits European Conference, 2000
A 900-MHz CMOS Ultra-Low Noise Amplifier (LNA) has been integrated in a 0.35µm RF CMOS process wi... more A 900-MHz CMOS Ultra-Low Noise Amplifier (LNA) has been integrated in a 0.35µm RF CMOS process with on-chip inductors. The LNA, housed in a standard TQFP48 package, features: Noise Figure NF=0.9dB with S11=-10.1dB, S22=-27dB, Power Gain Gp=14dB, input IP3=0dBm at Pdc=18mW. A NF=1.05dB is measured at Pdc=9mW. The reported LNA exhibits the best noise or power performance ever reported in
Annales Des Télécommunications, 1993
In the last few years we have seen a relevant transformation of the telephone network, with an ex... more In the last few years we have seen a relevant transformation of the telephone network, with an extensive digitalization of the voice transmission and switching able now to reach the subscriber. In the meanwhile various techniques have been implemented to exploit data transmission in an environment designed for voice only. This paper will review this important transformation and its future
The following paper would like to give an idea of the present status of silicon technologies used... more The following paper would like to give an idea of the present status of silicon technologies used for the analog front-end of communication systems. The frequency spectrum of application is that of the mobile communications standards (up to few GigaHertz). A short description of the available active devices (CMOS, SiGe BJT, DMOS) will be presented. In addition some information regarding the feasibility of good quality passive components (Inductors, Capacitors, Varactors, Resistors) will be given.
The continuous progress in semiconductor and module technology has indubitably fueled in the past... more The continuous progress in semiconductor and module technology has indubitably fueled in the past years,together with the system design and algorithms,the telecommunication and wireless evolution characterized by a growing demand of new services and functions,the continuous decrease of mobile terminal costs,longer battery duration.The paper gives a brief description on the state of art and on going developments of key submicron RF Silicon technologies employed within the Wireless equipment, mainly taking into account the 2.5-3G cellular-phone and emerging WLAN applications as the natural interconnection of wireless communications with Internet. While high density CMOS evolution still represents the core technology development also for RF dedicated Silicon, Silicon-Germanium or Silicon Germanium Carbon processes,differentiating factors both in term of overall performances and costs rely now also on availability of integrated good quality passives,RF MEMS as well as RF odules and cost...
Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Domestic Animal Endocrinology, 1982
Recent progress in bipolar technologies, mainly based on ion implanted structures, has led to the... more Recent progress in bipolar technologies, mainly based on ion implanted structures, has led to the integration of high current devices together with highly packed control electronics in a 50V monochip. An integrated circuit, which is able to drive with high efficiency various inductive loads for idustrial applications, is presented.
European Neuropsychopharmacology, 1991
Solid-State Circuits European Conference, 2000
A 900-MHz CMOS Ultra-Low Noise Amplifier (LNA) has been integrated in a 0.35µm RF CMOS process wi... more A 900-MHz CMOS Ultra-Low Noise Amplifier (LNA) has been integrated in a 0.35µm RF CMOS process with on-chip inductors. The LNA, housed in a standard TQFP48 package, features: Noise Figure NF=0.9dB with S11=-10.1dB, S22=-27dB, Power Gain Gp=14dB, input IP3=0dBm at Pdc=18mW. A NF=1.05dB is measured at Pdc=9mW. The reported LNA exhibits the best noise or power performance ever reported in