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Papers by georgios prekas

Sensors, 2020

Since the late 2000s, the availability of high-quality cadmium zinc telluride (CdZnTe) has greatl... more Since the late 2000s, the availability of high-quality cadmium zinc telluride (CdZnTe) has greatly increased. The excellent spectroscopic performance of this material has enabled the development of detectors with volumes exceeding 1 cm3 for use in the detection of nuclear materials. CdZnTe is also of great interest to the photon science community for applications in X-ray imaging cameras at synchrotron light sources and free electron lasers. Historically, spatial variations in the crystal properties and temporal instabilities under high-intensity irradiation has limited the use of CdZnTe detectors in these applications. Recently, Redlen Technologies have developed high-flux-capable CdZnTe material (HF-CdZnTe), which promises improved spatial and temporal stability. In this paper, the results of the characterization of 10 HF-CdZnTe detectors with dimensions of 20.35 mm × 20.45 mm × 2.00 mm are presented. Each sensor has 80 × 80 pixels on a 250-μm pitch and were flip-chip-bonded to th...

Cadmium Zinc Telluride (CdZnTe) has been the focus of intense research in recent years and is reg... more Cadmium Zinc Telluride (CdZnTe) has been the focus of intense research in recent years and is regarded as the material of choice for the production of the next generation of X-ray and γ-ray detectors. The internal electric field distribution in cadmium zinc telluride (CdZnTe) x-ray and γ-ray detectors strongly affects their performance in terms of charge transport and charge collection properties. In CdZnTe detectors the electric field distribution is sensitively dependent on not only the nature of the metal contacts but also on the working conditions of the devices such as the temperature and the rate of external irradiation. This work focuses on the direct measurements of the electric field profiles in CdZnTe detectors obtained using the Pockels electo-optic effect at room temperature, at low temperature conditions and under in situ X-ray irradiation. These data is also compared with alpha particle induced current pulses obtained by the transient current technique, and the influen...

Journal of Physics D: Applied Physics

MRS Online Proceeding Library

Real time imaging of the electric field distribution in CZT at low temperature has been carried o... more Real time imaging of the electric field distribution in CZT at low temperature has been carried out using the Pockels electro-optical effect. CZT detectors have been observed to show degraded spectroscopic resolution at low temperature due to so-called ‘polarization’ phenomena. By mounting a CZT device in a custom optical cryostat, we have used Pockels imaging to observe the distortion of the electric field distribution in the temperature range 240K - 300K. At 240K the electric field has a severely non-uniform depth distribution, with a high field region occupying ∼10% of the depth of the device under the cathode electrode and a low field in the remainder of the device. Using an alpha particle source positioned inside the vacuum chamber we have performed simultaneous alpha particle transient current (TCT) measurements. At low temperatures the alpha particle current pulses become significantly shorter, consistent with the reduced electron drift time due to a non-uniform electric field. These data provide useful insights into the mechanisms which limit the spectroscopic performance of CZT devices at reduced temperature.

MRS Proceedings, 2009

Real time imaging of the electric field distribution in CZT at low temperature has been carried o... more Real time imaging of the electric field distribution in CZT at low temperature has been carried out using the Pockels electro-optical effect. CZT detectors have been observed to show degraded spectroscopic resolution at low temperature due to so-called ‘polarization’ phenomena. By mounting a CZT device in a custom optical cryostat, we have used Pockels imaging to observe the distortion of the electric field distribution in the temperature range 240K - 300K. At 240K the electric field has a severely non-uniform depth distribution, with a high field region occupying ∼10% of the depth of the device under the cathode electrode and a low field in the remainder of the device. Using an alpha particle source positioned inside the vacuum chamber we have performed simultaneous alpha particle transient current (TCT) measurements. At low temperatures the alpha particle current pulses become significantly shorter, consistent with the reduced electron drift time due to a non-uniform electric fiel...

IEEE Transactions on Nuclear Science, 2000

We report our simulations on the influence of contacts on charge collection in semi-insulating (C... more We report our simulations on the influence of contacts on charge collection in semi-insulating (CdZn)Te with Au contacts under radiation flux, employing simultaneous solutions of the drift-diffusion and Poisson equations. The type of the space charge and the distribution of the electric field in the Au/(CdZn)Te/Au structure at high fluxes reflect the combined influence of charge generated by band bending

IEEE Transactions on Nuclear Science, 2000

ABSTRACT We are developing a technique to fabricate high spatial resolution and cost-effective ph... more ABSTRACT We are developing a technique to fabricate high spatial resolution and cost-effective photon counting detectors using silicon photomultipliers (SiPMs) and microcolumnar structured scintillator. Photon counting detectors using SiPMs are of much interest to the gamma- and X-ray detector community, but they have limitations at low energy due to their dark noise. In this paper, we report on vapor deposition of CsI:Tl directly onto a SiPM, a technique that improves optical coupling and allows for detection of low energy gamma- and X-rays. It simultaneously addresses related issues of light loss and light spread in the scintillator, thereby improving the performance of the detector. Devices made by this technique may be used for both photon counting and gamma- and X-ray imaging.

Applied Physics Letters, 2010

Applied Physics Letters, 2010

Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field pr... more Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field profile in the material bulk. In steady-state room temperature conditions the measured electric field profile is uniform, consistent with a low space charge concentration. At temperatures Ͻ270 K a significant nonuniform electric field profile is observed, which we explain in terms of temperature-induced band bending at the metal-semiconductor interface, causing the formation of positive space charge in the bulk. Similar electric field distortion effects are observed when room temperature CdZnTe is irradiated by x-rays, causing a high rate of photoinduced charge injection.

Sensors, 2020

Since the late 2000s, the availability of high-quality cadmium zinc telluride (CdZnTe) has greatl... more Since the late 2000s, the availability of high-quality cadmium zinc telluride (CdZnTe) has greatly increased. The excellent spectroscopic performance of this material has enabled the development of detectors with volumes exceeding 1 cm3 for use in the detection of nuclear materials. CdZnTe is also of great interest to the photon science community for applications in X-ray imaging cameras at synchrotron light sources and free electron lasers. Historically, spatial variations in the crystal properties and temporal instabilities under high-intensity irradiation has limited the use of CdZnTe detectors in these applications. Recently, Redlen Technologies have developed high-flux-capable CdZnTe material (HF-CdZnTe), which promises improved spatial and temporal stability. In this paper, the results of the characterization of 10 HF-CdZnTe detectors with dimensions of 20.35 mm × 20.45 mm × 2.00 mm are presented. Each sensor has 80 × 80 pixels on a 250-μm pitch and were flip-chip-bonded to th...

Cadmium Zinc Telluride (CdZnTe) has been the focus of intense research in recent years and is reg... more Cadmium Zinc Telluride (CdZnTe) has been the focus of intense research in recent years and is regarded as the material of choice for the production of the next generation of X-ray and γ-ray detectors. The internal electric field distribution in cadmium zinc telluride (CdZnTe) x-ray and γ-ray detectors strongly affects their performance in terms of charge transport and charge collection properties. In CdZnTe detectors the electric field distribution is sensitively dependent on not only the nature of the metal contacts but also on the working conditions of the devices such as the temperature and the rate of external irradiation. This work focuses on the direct measurements of the electric field profiles in CdZnTe detectors obtained using the Pockels electo-optic effect at room temperature, at low temperature conditions and under in situ X-ray irradiation. These data is also compared with alpha particle induced current pulses obtained by the transient current technique, and the influen...

Journal of Physics D: Applied Physics

MRS Online Proceeding Library

Real time imaging of the electric field distribution in CZT at low temperature has been carried o... more Real time imaging of the electric field distribution in CZT at low temperature has been carried out using the Pockels electro-optical effect. CZT detectors have been observed to show degraded spectroscopic resolution at low temperature due to so-called ‘polarization’ phenomena. By mounting a CZT device in a custom optical cryostat, we have used Pockels imaging to observe the distortion of the electric field distribution in the temperature range 240K - 300K. At 240K the electric field has a severely non-uniform depth distribution, with a high field region occupying ∼10% of the depth of the device under the cathode electrode and a low field in the remainder of the device. Using an alpha particle source positioned inside the vacuum chamber we have performed simultaneous alpha particle transient current (TCT) measurements. At low temperatures the alpha particle current pulses become significantly shorter, consistent with the reduced electron drift time due to a non-uniform electric field. These data provide useful insights into the mechanisms which limit the spectroscopic performance of CZT devices at reduced temperature.

MRS Proceedings, 2009

Real time imaging of the electric field distribution in CZT at low temperature has been carried o... more Real time imaging of the electric field distribution in CZT at low temperature has been carried out using the Pockels electro-optical effect. CZT detectors have been observed to show degraded spectroscopic resolution at low temperature due to so-called ‘polarization’ phenomena. By mounting a CZT device in a custom optical cryostat, we have used Pockels imaging to observe the distortion of the electric field distribution in the temperature range 240K - 300K. At 240K the electric field has a severely non-uniform depth distribution, with a high field region occupying ∼10% of the depth of the device under the cathode electrode and a low field in the remainder of the device. Using an alpha particle source positioned inside the vacuum chamber we have performed simultaneous alpha particle transient current (TCT) measurements. At low temperatures the alpha particle current pulses become significantly shorter, consistent with the reduced electron drift time due to a non-uniform electric fiel...

IEEE Transactions on Nuclear Science, 2000

We report our simulations on the influence of contacts on charge collection in semi-insulating (C... more We report our simulations on the influence of contacts on charge collection in semi-insulating (CdZn)Te with Au contacts under radiation flux, employing simultaneous solutions of the drift-diffusion and Poisson equations. The type of the space charge and the distribution of the electric field in the Au/(CdZn)Te/Au structure at high fluxes reflect the combined influence of charge generated by band bending

IEEE Transactions on Nuclear Science, 2000

ABSTRACT We are developing a technique to fabricate high spatial resolution and cost-effective ph... more ABSTRACT We are developing a technique to fabricate high spatial resolution and cost-effective photon counting detectors using silicon photomultipliers (SiPMs) and microcolumnar structured scintillator. Photon counting detectors using SiPMs are of much interest to the gamma- and X-ray detector community, but they have limitations at low energy due to their dark noise. In this paper, we report on vapor deposition of CsI:Tl directly onto a SiPM, a technique that improves optical coupling and allows for detection of low energy gamma- and X-rays. It simultaneously addresses related issues of light loss and light spread in the scintillator, thereby improving the performance of the detector. Devices made by this technique may be used for both photon counting and gamma- and X-ray imaging.

Applied Physics Letters, 2010

Applied Physics Letters, 2010

Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field pr... more Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field profile in the material bulk. In steady-state room temperature conditions the measured electric field profile is uniform, consistent with a low space charge concentration. At temperatures Ͻ270 K a significant nonuniform electric field profile is observed, which we explain in terms of temperature-induced band bending at the metal-semiconductor interface, causing the formation of positive space charge in the bulk. Similar electric field distortion effects are observed when room temperature CdZnTe is irradiated by x-rays, causing a high rate of photoinduced charge injection.