ranbir singh - Academia.edu (original) (raw)

Papers by ranbir singh

Research paper thumbnail of Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

IEEE Transactions on Electron Devices, 1999

Research paper thumbnail of The charged particle response of silicon carbide semiconductor radiation detectors

Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 2003

Research paper thumbnail of Status and prospects for SiC power MOSFETs

IEEE Transactions on Electron Devices, 2002

Research paper thumbnail of 1800 V NPN bipolar junction transistors in 4H-SiC

IEEE Electron Device Letters, 2001

Page 1. 124 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 3, MARCH 2001 1800 V NPN Bipolar Junction ... more Page 1. 124 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 3, MARCH 2001 1800 V NPN Bipolar Junction Transistors in 4H–SiC Sei-Hyung Ryu, Member, IEEE, Anant K. Agarwal, Member, IEEE, Ranbir Singh, and John W. Palmour, Member, IEEE ...

Research paper thumbnail of High voltage SiC diodes with small recovery time

Electronics Letters, 2000

ABSTRACT

Research paper thumbnail of High-power 4H-SiC JBS rectifiers

IEEE Transactions on Electron Devices, 2002

Research paper thumbnail of 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

Materials Science Forum, 2000

Page 1. Materials Science Forum Vols. 338-342 (2000) pp 1387-1390 © (2000) Trans Tech Publication... more Page 1. Materials Science Forum Vols. 338-342 (2000) pp 1387-1390 © (2000) Trans Tech Publications, Switzerland doi:10.4028/www.scientific.net/MSF.338-342.1387 All rights reserved. No part of contents of this paper may ...

Research paper thumbnail of Silicon carbide for power devices

An overview of the status of SiC technology for power devices is discussed. 4H-SiC is the most de... more An overview of the status of SiC technology for power devices is discussed. 4H-SiC is the most desirable SiC polytype for power devices because of its superior electron transport properties. Micropipe defect densities in 4H-SiC have been dramatically reduced, with 0.8 cm-2 being demonstrated on a 35 mm wafer. Interface trap densities of 1×1011 cm-2 eV-1 at the oxide/SiC interface have been achieved, resulting in a high SiC NMOSFET channel mobility of 72 cm2/V-sec. Device lifetimes for SiC n-channel MOSFETs have are projected to be 5 years at 350°C, and time dependent dielectric breakdown of oxides on p-type SiC have lifetimes >700 years at 2 MV/cm and 350°C. Sheet resistivities of <10 kΩ/sq. and p-type contact resistivities less than 10-5 Ω-cm2 have been obtained using high temperature Al+ ion implantation, and the first SiC CMOS circuits have been demonstrated using this technology. Power MOSFETs in 4H-SiC have been demonstrated to have specific on-resistances lower than equivalent Si devices, and blocking voltages as high as 800 V have been achieved. The highest power devices to date are 4.2 kW, 700 V 4H-SiC npnp thyristors, and their speed is very high, with a trr=105 nsecs and maximum operating frequency of 250 kHz

Research paper thumbnail of Reliability of SiC MOS devices

Solid-state Electronics, 2004

Research paper thumbnail of 4H-SiC bipolar PiN diodes with 5.5 kV blocking voltage

High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to 5.... more High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to 5.5 kV, good on-state and fast switching characteristics. This is the highest blocking voltage 4H-SiC device reported to date.

Research paper thumbnail of SiC power diodes provide breakthrough performance for a wide range of applications

IEEE Transactions on Power Electronics, 2001

... R. Singh is with Cree, Inc., Durham, NC 27703, USA. ... Page 3. HEFNER et al.: SiC POWER DIOD... more ... R. Singh is with Cree, Inc., Durham, NC 27703, USA. ... Page 3. HEFNER et al.: SiC POWER DIODES PROVIDE BREAKTHROUGH PERFORMANCE 275 Fig. 7. SiC MPS diode reverse recovery characteristics with and without an added drive capacitance. Fig. ...

Research paper thumbnail of 1500 V, 4 amp 4H-SiC JBS diodes

This paper reports the detailed design, fabrication and characterization of 1500 V, 4 Amp 4H-SiC ... more This paper reports the detailed design, fabrication and characterization of 1500 V, 4 Amp 4H-SiC JBS diodes. 2D device simulations show that a grid spacing of 4 μm results in the most optimum trade-off between the on-state and off-state characteristics. JBS diodes with linear and honeycombed p+ grids, Schottky diodes and implanted PiN diodes fabricated alongside show that while 4H-SiC JBS diodes behave similar to Schottky diodes in the on-state and switching characteristics, they show reverse characteristics similar to PiN diodes. Measurements on 4H-SiC JBS diodes indicate that the reverse recovery time (τn) and associated losses are near zero even at a rev. dI/dt of 75 A/μsec. Based on measured waveforms, detailed loss models on diode switching were established for a high frequency switching power supply efficiency evaluation. A DC/DC converter efficiency improvements of 3-6% were obtained over the fastest, lower blocking voltage silicon diode when operated in the 100-200 kHz range

Research paper thumbnail of Steady-state and transient characteristics of 10 kV 4H-SiC diodes

Solid-state Electronics, 2004

Research paper thumbnail of The critical charge density of 4H-SiC thyristors

IEEE Transactions on Electron Devices, 1998

Research paper thumbnail of Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

IEEE Transactions on Electron Devices, 1999

Research paper thumbnail of The charged particle response of silicon carbide semiconductor radiation detectors

Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment, 2003

Research paper thumbnail of Status and prospects for SiC power MOSFETs

IEEE Transactions on Electron Devices, 2002

Research paper thumbnail of 1800 V NPN bipolar junction transistors in 4H-SiC

IEEE Electron Device Letters, 2001

Page 1. 124 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 3, MARCH 2001 1800 V NPN Bipolar Junction ... more Page 1. 124 IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 3, MARCH 2001 1800 V NPN Bipolar Junction Transistors in 4H–SiC Sei-Hyung Ryu, Member, IEEE, Anant K. Agarwal, Member, IEEE, Ranbir Singh, and John W. Palmour, Member, IEEE ...

Research paper thumbnail of High voltage SiC diodes with small recovery time

Electronics Letters, 2000

ABSTRACT

Research paper thumbnail of High-power 4H-SiC JBS rectifiers

IEEE Transactions on Electron Devices, 2002

Research paper thumbnail of 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

Materials Science Forum, 2000

Page 1. Materials Science Forum Vols. 338-342 (2000) pp 1387-1390 © (2000) Trans Tech Publication... more Page 1. Materials Science Forum Vols. 338-342 (2000) pp 1387-1390 © (2000) Trans Tech Publications, Switzerland doi:10.4028/www.scientific.net/MSF.338-342.1387 All rights reserved. No part of contents of this paper may ...

Research paper thumbnail of Silicon carbide for power devices

An overview of the status of SiC technology for power devices is discussed. 4H-SiC is the most de... more An overview of the status of SiC technology for power devices is discussed. 4H-SiC is the most desirable SiC polytype for power devices because of its superior electron transport properties. Micropipe defect densities in 4H-SiC have been dramatically reduced, with 0.8 cm-2 being demonstrated on a 35 mm wafer. Interface trap densities of 1×1011 cm-2 eV-1 at the oxide/SiC interface have been achieved, resulting in a high SiC NMOSFET channel mobility of 72 cm2/V-sec. Device lifetimes for SiC n-channel MOSFETs have are projected to be 5 years at 350°C, and time dependent dielectric breakdown of oxides on p-type SiC have lifetimes >700 years at 2 MV/cm and 350°C. Sheet resistivities of <10 kΩ/sq. and p-type contact resistivities less than 10-5 Ω-cm2 have been obtained using high temperature Al+ ion implantation, and the first SiC CMOS circuits have been demonstrated using this technology. Power MOSFETs in 4H-SiC have been demonstrated to have specific on-resistances lower than equivalent Si devices, and blocking voltages as high as 800 V have been achieved. The highest power devices to date are 4.2 kW, 700 V 4H-SiC npnp thyristors, and their speed is very high, with a trr=105 nsecs and maximum operating frequency of 250 kHz

Research paper thumbnail of Reliability of SiC MOS devices

Solid-state Electronics, 2004

Research paper thumbnail of 4H-SiC bipolar PiN diodes with 5.5 kV blocking voltage

High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to 5.... more High voltage Si P-i-N diodes made using conventional semiconductor materials are restricted to 5.5 kV, good on-state and fast switching characteristics. This is the highest blocking voltage 4H-SiC device reported to date.

Research paper thumbnail of SiC power diodes provide breakthrough performance for a wide range of applications

IEEE Transactions on Power Electronics, 2001

... R. Singh is with Cree, Inc., Durham, NC 27703, USA. ... Page 3. HEFNER et al.: SiC POWER DIOD... more ... R. Singh is with Cree, Inc., Durham, NC 27703, USA. ... Page 3. HEFNER et al.: SiC POWER DIODES PROVIDE BREAKTHROUGH PERFORMANCE 275 Fig. 7. SiC MPS diode reverse recovery characteristics with and without an added drive capacitance. Fig. ...

Research paper thumbnail of 1500 V, 4 amp 4H-SiC JBS diodes

This paper reports the detailed design, fabrication and characterization of 1500 V, 4 Amp 4H-SiC ... more This paper reports the detailed design, fabrication and characterization of 1500 V, 4 Amp 4H-SiC JBS diodes. 2D device simulations show that a grid spacing of 4 μm results in the most optimum trade-off between the on-state and off-state characteristics. JBS diodes with linear and honeycombed p+ grids, Schottky diodes and implanted PiN diodes fabricated alongside show that while 4H-SiC JBS diodes behave similar to Schottky diodes in the on-state and switching characteristics, they show reverse characteristics similar to PiN diodes. Measurements on 4H-SiC JBS diodes indicate that the reverse recovery time (τn) and associated losses are near zero even at a rev. dI/dt of 75 A/μsec. Based on measured waveforms, detailed loss models on diode switching were established for a high frequency switching power supply efficiency evaluation. A DC/DC converter efficiency improvements of 3-6% were obtained over the fastest, lower blocking voltage silicon diode when operated in the 100-200 kHz range

Research paper thumbnail of Steady-state and transient characteristics of 10 kV 4H-SiC diodes

Solid-state Electronics, 2004

Research paper thumbnail of The critical charge density of 4H-SiC thyristors

IEEE Transactions on Electron Devices, 1998