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Research paper thumbnail of Determination of serotonin and dopamine in mouse brain tissue by high performance liquid chromatography with electrochemical detection

Analytical Chemistry, 1977

Research paper thumbnail of Simultaneous determination of norepinephrine, dopamine, and serotonin in brain tissue by high-pressure liquid chromatography with electrochemical detection

Analytica Chimica Acta, 1979

Research paper thumbnail of High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Journal of Crystal Growth, 1995

We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bip... more We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bipolar transistors with a carbon-doped base grown by a multi-wafer gas-source molecular beam epitaxy (GSMBE) system, which was developed by ourselves. A large-area uniform growth of p-type GaAs and InGaP has been realized. The variation in layer thickness of these layers was less than ±

Research paper thumbnail of Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy

Journal of Crystal Growth, 1990

We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by m... more We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by molecular beam epitaxy for the first time, to our knowledge, using dual As 4 beams. The band-edge discontinuity of the GaAsSb/InAlAs heterointerface was estimated by the dependence of photoluminescence (PL) peak energy on the well width at 4.2 K. We estimated the valence band-edge discontinuity (Ẽ~)to be about 0.78 eV. We also studied the interface roughness using PL measurements and transmission electron microscopy (TEM). The PL linewidths from GaAsSb/lnAlAs QWs agreed with the linewidth calculated assuming a one-monolayer fluctuation in well width. The interface roughness was expected to be one monolayer in these GaAsSb/lnAlAs QWs. We confirmed this by examining the cross section of QW by TEM.

Research paper thumbnail of High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Journal of Crystal Growth, 1995

We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bip... more We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bipolar transistors with a carbon-doped base grown by a multi-wafer gas-source molecular beam epitaxy (GSMBE) system, which was developed by ourselves. A large-area uniform growth of p-type GaAs and InGaP has been realized. The variation in layer thickness of these layers was less than ±

Research paper thumbnail of Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy

Journal of Crystal Growth, 1990

We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by m... more We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by molecular beam epitaxy for the first time, to our knowledge, using dual As 4 beams. The band-edge discontinuity of the GaAsSb/InAlAs heterointerface was estimated by the dependence of photoluminescence (PL) peak energy on the well width at 4.2 K. We estimated the valence band-edge discontinuity (Ẽ~)to be about 0.78 eV. We also studied the interface roughness using PL measurements and transmission electron microscopy (TEM). The PL linewidths from GaAsSb/lnAlAs QWs agreed with the linewidth calculated assuming a one-monolayer fluctuation in well width. The interface roughness was expected to be one monolayer in these GaAsSb/lnAlAs QWs. We confirmed this by examining the cross section of QW by TEM.

Research paper thumbnail of High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Journal of Crystal Growth, 1995

We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bip... more We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bipolar transistors with a carbon-doped base grown by a multi-wafer gas-source molecular beam epitaxy (GSMBE) system, which was developed by ourselves. A large-area uniform growth of p-type GaAs and InGaP has been realized. The variation in layer thickness of these layers was less than ±

Research paper thumbnail of Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy

Journal of Crystal Growth, 1990

We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by m... more We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by molecular beam epitaxy for the first time, to our knowledge, using dual As 4 beams. The band-edge discontinuity of the GaAsSb/InAlAs heterointerface was estimated by the dependence of photoluminescence (PL) peak energy on the well width at 4.2 K. We estimated the valence band-edge discontinuity (Ẽ~)to be about 0.78 eV. We also studied the interface roughness using PL measurements and transmission electron microscopy (TEM). The PL linewidths from GaAsSb/lnAlAs QWs agreed with the linewidth calculated assuming a one-monolayer fluctuation in well width. The interface roughness was expected to be one monolayer in these GaAsSb/lnAlAs QWs. We confirmed this by examining the cross section of QW by TEM.

Research paper thumbnail of Determination of serotonin and dopamine in mouse brain tissue by high performance liquid chromatography with electrochemical detection

Analytical Chemistry, 1977

Research paper thumbnail of Simultaneous determination of norepinephrine, dopamine, and serotonin in brain tissue by high-pressure liquid chromatography with electrochemical detection

Analytica Chimica Acta, 1979

Research paper thumbnail of High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Journal of Crystal Growth, 1995

We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bip... more We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bipolar transistors with a carbon-doped base grown by a multi-wafer gas-source molecular beam epitaxy (GSMBE) system, which was developed by ourselves. A large-area uniform growth of p-type GaAs and InGaP has been realized. The variation in layer thickness of these layers was less than ±

Research paper thumbnail of Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy

Journal of Crystal Growth, 1990

We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by m... more We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by molecular beam epitaxy for the first time, to our knowledge, using dual As 4 beams. The band-edge discontinuity of the GaAsSb/InAlAs heterointerface was estimated by the dependence of photoluminescence (PL) peak energy on the well width at 4.2 K. We estimated the valence band-edge discontinuity (Ẽ~)to be about 0.78 eV. We also studied the interface roughness using PL measurements and transmission electron microscopy (TEM). The PL linewidths from GaAsSb/lnAlAs QWs agreed with the linewidth calculated assuming a one-monolayer fluctuation in well width. The interface roughness was expected to be one monolayer in these GaAsSb/lnAlAs QWs. We confirmed this by examining the cross section of QW by TEM.

Research paper thumbnail of High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Journal of Crystal Growth, 1995

We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bip... more We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bipolar transistors with a carbon-doped base grown by a multi-wafer gas-source molecular beam epitaxy (GSMBE) system, which was developed by ourselves. A large-area uniform growth of p-type GaAs and InGaP has been realized. The variation in layer thickness of these layers was less than ±

Research paper thumbnail of Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy

Journal of Crystal Growth, 1990

We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by m... more We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by molecular beam epitaxy for the first time, to our knowledge, using dual As 4 beams. The band-edge discontinuity of the GaAsSb/InAlAs heterointerface was estimated by the dependence of photoluminescence (PL) peak energy on the well width at 4.2 K. We estimated the valence band-edge discontinuity (Ẽ~)to be about 0.78 eV. We also studied the interface roughness using PL measurements and transmission electron microscopy (TEM). The PL linewidths from GaAsSb/lnAlAs QWs agreed with the linewidth calculated assuming a one-monolayer fluctuation in well width. The interface roughness was expected to be one monolayer in these GaAsSb/lnAlAs QWs. We confirmed this by examining the cross section of QW by TEM.

Research paper thumbnail of High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system

Journal of Crystal Growth, 1995

We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bip... more We report for the first time on the high quality and highly uniform InGaP/GaAs heterojunction bipolar transistors with a carbon-doped base grown by a multi-wafer gas-source molecular beam epitaxy (GSMBE) system, which was developed by ourselves. A large-area uniform growth of p-type GaAs and InGaP has been realized. The variation in layer thickness of these layers was less than ±

Research paper thumbnail of Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy

Journal of Crystal Growth, 1990

We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by m... more We have successfully grown GaAsSb/lnAlAs quantum-well (QW) structures lattice-matched to InP by molecular beam epitaxy for the first time, to our knowledge, using dual As 4 beams. The band-edge discontinuity of the GaAsSb/InAlAs heterointerface was estimated by the dependence of photoluminescence (PL) peak energy on the well width at 4.2 K. We estimated the valence band-edge discontinuity (Ẽ~)to be about 0.78 eV. We also studied the interface roughness using PL measurements and transmission electron microscopy (TEM). The PL linewidths from GaAsSb/lnAlAs QWs agreed with the linewidth calculated assuming a one-monolayer fluctuation in well width. The interface roughness was expected to be one monolayer in these GaAsSb/lnAlAs QWs. We confirmed this by examining the cross section of QW by TEM.

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