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IEEE 18th International Semiconductor Laser Conference

We report on the successful demonstration of nonabsorbing mirrors in Al-free broad area lasers wi... more We report on the successful demonstration of nonabsorbing mirrors in Al-free broad area lasers with reliable operation at 2W and a 70C heatsink temperature. We have used a quantum-well intermixing technique to create nonabsorbing mirrors (NAM) in Al-free broad area lasers. We have life-tested these devices at 2W and a 70C heat sink temperature with virtually no degradation over 2000 hours.

IEEE Conference Record - Abstracts 1992 IEEE International Conference on Plasma

IEEE Conference Record - Abstracts 1991 IEEE International Conference on Plasma Science

ABSTRACT Not Available

IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)

Novel In-Plane Semiconductor Lasers II, 2003

Surface and Coatings Technology, 1992

Surface and Coatings Technology, 1997

Abstract Ti-6A1-4V samples have been implanted with iridium utilizing a cathodic arc metal ion im... more Abstract Ti-6A1-4V samples have been implanted with iridium utilizing a cathodic arc metal ion implantation system. The bias voltage of the substrates was held at −40 kV, resulting in implantation energies of 40 keV for singly charged ions, 80, 120 and 160 keV for ions that are ionized two, three or four times, respectively. Samples were prepared with ion doses of 0.6 × 10 16 and 1.2 × 10 16 ions cm −2 . The samples were analyzed through anodic polarization tests and open circuit corrosion potential measurements in N 2 deaerated 1 N H 2 SO 4 solution. The results of these tests indicate that the potential of the sample surface increases in potential toward that of pure iridium, indicating continuous surface enrichment until a passivated state is reached. SIMS analysis, before and after corrosion tests confirm that the surface concentration of iridium increases from 2 and 4% to ca 65 and 90% (for doses of 0.6 × 10 16 and 1.2 × 10 16 ions cm −2 , respectively).

IEEE Transactions on Plasma Science, 1993

ABSTRACT In previous work (1992), the authors studied the characteristics of gated field emitter ... more ABSTRACT In previous work (1992), the authors studied the characteristics of gated field emitter failures and developed a theory to explain failure initiation. During a failure, the voltage between the emitter tip and gate (spaced 1 μm apart) was found to drop from -140 V to ≈-10 V. The current density was found to be ~1012 A/m2 during the failure, and plumes of ions and electrons were injected into vacuum. The ratio of ion current to electron current was found to be 10%. Those results indicated that the failures were similar to cathodic vacuum arcs. In the present study the energies of the ions and electrons are measured using a retarding potential energy analyzer. The results show that there are ions with energies as high as 80 eV and electrons with energies of 6 eV. The high-energy ions confirm that emitter failures are cathodic vacuum arcs

Journal of Applied Physics, 1993

The charge transfer collision cross section of He+ ions in a collisional helium plasma has been d... more The charge transfer collision cross section of He+ ions in a collisional helium plasma has been determined based on the ion energy distribution at the target during the plasma immersion ion implantation (PIII) process. The ion energy distribution is obtained by inferring data from a secondary-ion mass spectroscopy measurement and a simple collisional theory. The value of the charge transfer cross section in the collisional plasma was found to be higher than previously published values. The cross-section value determined by the PIII technique was used in a plasma simulation and was found to agree with our experimental observations.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996

IEEE 18th International Semiconductor Laser Conference

We report on the successful demonstration of nonabsorbing mirrors in Al-free broad area lasers wi... more We report on the successful demonstration of nonabsorbing mirrors in Al-free broad area lasers with reliable operation at 2W and a 70C heatsink temperature. We have used a quantum-well intermixing technique to create nonabsorbing mirrors (NAM) in Al-free broad area lasers. We have life-tested these devices at 2W and a 70C heat sink temperature with virtually no degradation over 2000 hours.

IEEE Conference Record - Abstracts 1992 IEEE International Conference on Plasma

IEEE Conference Record - Abstracts 1991 IEEE International Conference on Plasma Science

ABSTRACT Not Available

IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)

Novel In-Plane Semiconductor Lasers II, 2003

Surface and Coatings Technology, 1992

Surface and Coatings Technology, 1997

Abstract Ti-6A1-4V samples have been implanted with iridium utilizing a cathodic arc metal ion im... more Abstract Ti-6A1-4V samples have been implanted with iridium utilizing a cathodic arc metal ion implantation system. The bias voltage of the substrates was held at −40 kV, resulting in implantation energies of 40 keV for singly charged ions, 80, 120 and 160 keV for ions that are ionized two, three or four times, respectively. Samples were prepared with ion doses of 0.6 × 10 16 and 1.2 × 10 16 ions cm −2 . The samples were analyzed through anodic polarization tests and open circuit corrosion potential measurements in N 2 deaerated 1 N H 2 SO 4 solution. The results of these tests indicate that the potential of the sample surface increases in potential toward that of pure iridium, indicating continuous surface enrichment until a passivated state is reached. SIMS analysis, before and after corrosion tests confirm that the surface concentration of iridium increases from 2 and 4% to ca 65 and 90% (for doses of 0.6 × 10 16 and 1.2 × 10 16 ions cm −2 , respectively).

IEEE Transactions on Plasma Science, 1993

ABSTRACT In previous work (1992), the authors studied the characteristics of gated field emitter ... more ABSTRACT In previous work (1992), the authors studied the characteristics of gated field emitter failures and developed a theory to explain failure initiation. During a failure, the voltage between the emitter tip and gate (spaced 1 μm apart) was found to drop from -140 V to ≈-10 V. The current density was found to be ~1012 A/m2 during the failure, and plumes of ions and electrons were injected into vacuum. The ratio of ion current to electron current was found to be 10%. Those results indicated that the failures were similar to cathodic vacuum arcs. In the present study the energies of the ions and electrons are measured using a retarding potential energy analyzer. The results show that there are ions with energies as high as 80 eV and electrons with energies of 6 eV. The high-energy ions confirm that emitter failures are cathodic vacuum arcs

Journal of Applied Physics, 1993

The charge transfer collision cross section of He+ ions in a collisional helium plasma has been d... more The charge transfer collision cross section of He+ ions in a collisional helium plasma has been determined based on the ion energy distribution at the target during the plasma immersion ion implantation (PIII) process. The ion energy distribution is obtained by inferring data from a secondary-ion mass spectroscopy measurement and a simple collisional theory. The value of the charge transfer cross section in the collisional plasma was found to be higher than previously published values. The cross-section value determined by the PIII technique was used in a plasma simulation and was found to agree with our experimental observations.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996

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