yoshihiro aono - Academia.edu (original) (raw)

yoshihiro aono

Uploads

Papers by yoshihiro aono

Research paper thumbnail of Evaluation of Assay System of Circulating Drug in Acute Drug Intoxication

Japanese Journal of National Medical Services, 2000

Research paper thumbnail of Serum Vancomycin Concentration and Initial Dosage Regimen

Iryo Yakugaku (Japanese Journal of Pharmaceutical Health Care and Sciences), 2001

Research paper thumbnail of ヒドロキシジン急性薬物中毒患者における血中濃度と中毒症状

Japanese Journal of Hospital Pharmacy, 2000

Research paper thumbnail of Dislocation Emission and Internal Structural Change in Single Crystalline Silicon under Indentation by Molecular Dynamics Simulation

Kansai Shibu Koenkai koen ronbunshu, 2002

Indentation prob1em of single crystalline silicon is analyzed using the 皿 elecular dynamics simul... more Indentation prob1em of single crystalline silicon is analyzed using the 皿 elecular dynamics simulation ． Critical shear stress ef dislocation emission 正 s estimated by both the average pressure due te indent load and atomic − level stress distriblltion ． After a complete loading hysterisis ， the dislecation loop annihilates into the a 皿 orphous phase and the pile − up of the surface due to the global e1astic recovery is observed ， which is i ロ qualitative agreement with the SIM observation ，

Research paper thumbnail of Evaluation of Assay System of Circulating Drug in Acute Drug Intoxication

Japanese Journal of National Medical Services, 2000

Research paper thumbnail of Serum Vancomycin Concentration and Initial Dosage Regimen

Iryo Yakugaku (Japanese Journal of Pharmaceutical Health Care and Sciences), 2001

Research paper thumbnail of ヒドロキシジン急性薬物中毒患者における血中濃度と中毒症状

Japanese Journal of Hospital Pharmacy, 2000

Research paper thumbnail of Dislocation Emission and Internal Structural Change in Single Crystalline Silicon under Indentation by Molecular Dynamics Simulation

Kansai Shibu Koenkai koen ronbunshu, 2002

Indentation prob1em of single crystalline silicon is analyzed using the 皿 elecular dynamics simul... more Indentation prob1em of single crystalline silicon is analyzed using the 皿 elecular dynamics simulation ． Critical shear stress ef dislocation emission 正 s estimated by both the average pressure due te indent load and atomic − level stress distriblltion ． After a complete loading hysterisis ， the dislecation loop annihilates into the a 皿 orphous phase and the pile − up of the surface due to the global e1astic recovery is observed ， which is i ロ qualitative agreement with the SIM observation ，

Log In