peiqi zhou - Academia.edu (original) (raw)
Papers by peiqi zhou
Applied Sciences
In recent years, silicon photonics has achieved great success in optical communication area. More... more In recent years, silicon photonics has achieved great success in optical communication area. More and more on-chip optoelectronic devices have been realized and commercialized on silicon photonics platform, such as silicon-based modulators, filters and detectors. However, on-chip light sources are still not achieved because that silicon is an indirect bandgap material. To solve this problem, the rare earth element erbium (Er) is considered, which emits light covering 1.5 μm to 1.6 μm and has been widely used in fiber amplifiers. Compared to Er-doped fiber amplifiers (EDFA), the Er ion concentration needs to be more than two orders higher for on-chip Er-based light sources due to the compact size integration requirements. Therefore, the choice of the host material is crucially important. In this paper, we review the recent progress in on-chip Er-based light sources and the advantages and disadvantages of different host materials are compared and analyzed. Finally, the existing challe...
Asia Communications and Photonics Conference 2021
We optimize phase shift structures of distributed feedback (DFB) lasers. For the multi-distribute... more We optimize phase shift structures of distributed feedback (DFB) lasers. For the multi-distributed phase shift laser, the output slope can reach up to 51.90% when the optimal cavity length is 2.2 mm.
OSA Continuum, 2021
Erbium-doped waveguide amplifiers are important for silicon photonic large-scale integration. The... more Erbium-doped waveguide amplifiers are important for silicon photonic large-scale integration. They boost the optical signal to compensate for the on-chip loss of the whole system, such as insertion, transmission, and coupling loss. Herein, a GaAs-on-silicon-pumped erbium-based waveguide amplifier is proposed. The optical amplifier is based on waveguides evanescently coupled with an erbium-doped thin-film gain medium. The erbium-doped gain region is locally pumped by a hybrid GaAs-SiN/SiO vertical-cavity-emitting pump laser. It can be selectively fabricated on the silicon photonic chip that has good position flexibility when integrated with other devices. The amplifier provides high-quality electrically driven amplification and realizes the full integration of amplifiers with the silicon photonic system without any external pump light source. The modeling analyses show that the proposed amplifier design has a maximum saturated gain of 42.5 dB/cm with a modulation bandwidth of ∼42 GHz...
2019 Asia Communications and Photonics Conference (ACP), 2019
We proposed high performance Er silicate amplifiers and lasers, based on hybrid erbium silicate-s... more We proposed high performance Er silicate amplifiers and lasers, based on hybrid erbium silicate-silicon nitride strip-loaded waveguides. The results provide supports and guidances for the high performance erbium silicate amplifiers and lasers.
Angewandte Chemie, 2020
Described here is a multicomponent strategy to achieve two different regioselectivities from alky... more Described here is a multicomponent strategy to achieve two different regioselectivities from alkynes, isothiocyanates and H 2 O with a proton acid/N-chlorophthalimide (NCPI) system, selectively obtaining non-aromatic five-membered sulfur heterocycles: 1,3-oxathiol-2-imines/thiazol-2(3H)-one derivatives through multiple bond formations. The process features readily available starting materials, mild reaction conditions, broad substrate scope, good functional group tolerance, high regio- and chemo- selectivities, gram-scale synthesis and late-stage modifications. Mechanistic studies support that the transformation process includes a combination of H 2 O and isothiocyanate, free radical formation, carbonation and intramolecular cyclization to give the products. Furthermore, the 1,3-oxathiol-2-imine derivatives with unique fluorescence characteristics, can be served as metal ions Pd 2+ sensor with "turn-off" response, showing potential applications in environmental and biological fields.
Optics Express, 2018
Erbium-doped materials have played an important role in the fabrication of light sources used in ... more Erbium-doped materials have played an important role in the fabrication of light sources used in silicon photonics. Recent studies demonstrated that erbium silicate nanowire had a high net gain attributable to its high erbium concentration and excellent material quality. We establish a more accurate and comprehensive theoretical model of erbium silicate nanowire, analyze the modeled nanowire's properties, and optimize a high-gain erbium silicate waveguide amplifier and low-threshold, high-efficiency laser by considering upconversion, energy transfer, and amplified spontaneous emission. The simulation results and previous experimental data reported in reference showed some agreement. A proposed waveguide amplifier, based on the optimized design, displayed a gain greater than 20 dB/mm. Then, a 3.3 mW low-threshold laser with a maximum power-conversion efficiency of 50% was modeled by choosing the optimized resonator cavity and reflector. The results indicate that erbium silicate compound materials with large optical gains can serve as potential candidates for inclusion in scale-integrated amplifiers and other applications requiring lasers.
![Research paper thumbnail of Erbium silicate compound optical waveguide amplifier and laser [Invited]](https://attachments.academia-assets.com/103603257/thumbnails/1.jpg)
](Optical Materials Express, 2018
In the process of information technology, as Moore's law becomes more and more close to the limit... more In the process of information technology, as Moore's law becomes more and more close to the limit, the consensus to combine microelectronics and optoelectronics to develop silicon-based large-scale optoelectronic integration technology is inevitable. As the most important part of silicon photonic devices, a silicon-based light source still attracted great effort. In the traditional research, erbium-doped materials have played an important role in silicon-based light sources. Recent studies demonstrated that the erbium silicate compound had a high net gain attributable to a high erbium concentration that has no insolubility problem. This paper focuses on the theory, designs, simulations, preparation methods, process and device optimizations of the erbium silicate compound optical waveguide amplifier and laser. The erbium silicate compound materials with large optical gains can serve as potential candidates for future silicon-based scale-integrated light-source applications.
Organic Letters, 2019
A novel strategy for the synthesis of 2-aroylthienothiazoles via C−H/N−O bond functionalization o... more A novel strategy for the synthesis of 2-aroylthienothiazoles via C−H/N−O bond functionalization of ketoximes is developed. This reaction features excellent step-and atom-economy, as well as broad substrate scope. Various common ketoximes, even vinyl ketoximes, were efficiently converted to 2-aroylthienothiazoles. Preliminary mechanistic studies indicated that the radical process should be involved in this transformation. Moreover, the product exhibited good coordination with Cu(II), showing the potential application in the metal coordination field.
Applied Sciences
In recent years, silicon photonics has achieved great success in optical communication area. More... more In recent years, silicon photonics has achieved great success in optical communication area. More and more on-chip optoelectronic devices have been realized and commercialized on silicon photonics platform, such as silicon-based modulators, filters and detectors. However, on-chip light sources are still not achieved because that silicon is an indirect bandgap material. To solve this problem, the rare earth element erbium (Er) is considered, which emits light covering 1.5 μm to 1.6 μm and has been widely used in fiber amplifiers. Compared to Er-doped fiber amplifiers (EDFA), the Er ion concentration needs to be more than two orders higher for on-chip Er-based light sources due to the compact size integration requirements. Therefore, the choice of the host material is crucially important. In this paper, we review the recent progress in on-chip Er-based light sources and the advantages and disadvantages of different host materials are compared and analyzed. Finally, the existing challe...
Asia Communications and Photonics Conference 2021
We optimize phase shift structures of distributed feedback (DFB) lasers. For the multi-distribute... more We optimize phase shift structures of distributed feedback (DFB) lasers. For the multi-distributed phase shift laser, the output slope can reach up to 51.90% when the optimal cavity length is 2.2 mm.
OSA Continuum, 2021
Erbium-doped waveguide amplifiers are important for silicon photonic large-scale integration. The... more Erbium-doped waveguide amplifiers are important for silicon photonic large-scale integration. They boost the optical signal to compensate for the on-chip loss of the whole system, such as insertion, transmission, and coupling loss. Herein, a GaAs-on-silicon-pumped erbium-based waveguide amplifier is proposed. The optical amplifier is based on waveguides evanescently coupled with an erbium-doped thin-film gain medium. The erbium-doped gain region is locally pumped by a hybrid GaAs-SiN/SiO vertical-cavity-emitting pump laser. It can be selectively fabricated on the silicon photonic chip that has good position flexibility when integrated with other devices. The amplifier provides high-quality electrically driven amplification and realizes the full integration of amplifiers with the silicon photonic system without any external pump light source. The modeling analyses show that the proposed amplifier design has a maximum saturated gain of 42.5 dB/cm with a modulation bandwidth of ∼42 GHz...
2019 Asia Communications and Photonics Conference (ACP), 2019
We proposed high performance Er silicate amplifiers and lasers, based on hybrid erbium silicate-s... more We proposed high performance Er silicate amplifiers and lasers, based on hybrid erbium silicate-silicon nitride strip-loaded waveguides. The results provide supports and guidances for the high performance erbium silicate amplifiers and lasers.
Optics Express, 2018
Erbium-doped materials have played an important role in the fabrication of light sources used in ... more Erbium-doped materials have played an important role in the fabrication of light sources used in silicon photonics. Recent studies demonstrated that erbium silicate nanowire had a high net gain attributable to its high erbium concentration and excellent material quality. We establish a more accurate and comprehensive theoretical model of erbium silicate nanowire, analyze the modeled nanowire's properties, and optimize a high-gain erbium silicate waveguide amplifier and low-threshold, high-efficiency laser by considering upconversion, energy transfer, and amplified spontaneous emission. The simulation results and previous experimental data reported in reference showed some agreement. A proposed waveguide amplifier, based on the optimized design, displayed a gain greater than 20 dB/mm. Then, a 3.3 mW low-threshold laser with a maximum power-conversion efficiency of 50% was modeled by choosing the optimized resonator cavity and reflector. The results indicate that erbium silicate compound materials with large optical gains can serve as potential candidates for inclusion in scale-integrated amplifiers and other applications requiring lasers.
![Research paper thumbnail of Erbium silicate compound optical waveguide amplifier and laser [Invited]](https://attachments.academia-assets.com/103603222/thumbnails/1.jpg)
](Optical Materials Express, 2018
In the process of information technology, as Moore's law becomes more and more close to the limit... more In the process of information technology, as Moore's law becomes more and more close to the limit, the consensus to combine microelectronics and optoelectronics to develop silicon-based large-scale optoelectronic integration technology is inevitable. As the most important part of silicon photonic devices, a silicon-based light source still attracted great effort. In the traditional research, erbium-doped materials have played an important role in silicon-based light sources. Recent studies demonstrated that the erbium silicate compound had a high net gain attributable to a high erbium concentration that has no insolubility problem. This paper focuses on the theory, designs, simulations, preparation methods, process and device optimizations of the erbium silicate compound optical waveguide amplifier and laser. The erbium silicate compound materials with large optical gains can serve as potential candidates for future silicon-based scale-integrated light-source applications.
IEEE Journal of Quantum Electronics, 2020
Silicon-based lasers have played an important role in silicon-based optoelectronic integrated sys... more Silicon-based lasers have played an important role in silicon-based optoelectronic integrated system. Recent studies demonstrated erbium silicate was an ideal candidate material for high performance silicon-based lasers in the telecom wavelength due to its high erbium concentrations. In previous works erbium silicate compounds led to high waveguide losses, the hybrid layers of erbium silicate and silicon nitride seem to be suitable to overcome high losses of previous designs with Er-based gain media waveguides. So a hybrid erbium silicate-silicon nitride waveguide laser has been proposed to make up for the loss problems of erbium silicate material, and to obtain high laser output power and high efficiency. Then, different cavity geometries, including ordinary strip-loaded DFB cavity with pump/signal resonant external cavity, have been discussed and optimized to further improve the laser performance. A 70 mW high-power laser with the maximum power conversion efficiency of 60% can be obtained in a 6.5 mm distributed feedback cavity length through developing the optimized signal external resonator cavity and grating reflector. Finally, the usability of this technology has been discussed as a potential input laser for silicon photonics. The results indicate the hybrid erbium silicate-silicon nitride waveguide lasers with high performance as potential candidates for future scale integrated silicon-based lasers application. Index Terms-erbium silicate, silicon-based, high power, waveguide lasers I. INTRODUCTION ILICON-BASED laser is an important component of silicon-based optoelectronic integrated system. The performance of silicon-based laser directly affects the overall performance of the optoelectronic integrated circuit, as a source. It is the key to realize high-speed, broadband, low-cost and lowpower consumption optical interconnection, and it also acts as the basis for the development of high-speed broadband inform
IEEE Journal of Quantum Electronics, 2020
Silicon-based lasers have played an important role in silicon-based optoelectronic integrated sys... more Silicon-based lasers have played an important role in silicon-based optoelectronic integrated system. Recent studies demonstrated erbium silicate was an ideal candidate material for high performance silicon-based lasers in the telecom wavelength due to its high erbium concentrations. In previous works erbium silicate compounds led to high waveguide losses, the hybrid layers of erbium silicate and silicon nitride seem to be suitable to overcome high losses of previous designs with Er-based gain media waveguides. So a hybrid erbium silicate-silicon nitride waveguide laser has been proposed to make up for the loss problems of erbium silicate material, and to obtain high laser output power and high efficiency. Then, different cavity geometries, including ordinary strip-loaded DFB cavity with pump/signal resonant external cavity, have been discussed and optimized to further improve the laser performance. A 70 mW high-power laser with the maximum power conversion efficiency of 60% can be obtained in a 6.5 mm distributed feedback cavity length through developing the optimized signal external resonator cavity and grating reflector. Finally, the usability of this technology has been discussed as a potential input laser for silicon photonics. The results indicate the hybrid erbium silicate-silicon nitride waveguide lasers with high performance as potential candidates for future scale integrated silicon-based lasers application. Index Terms-erbium silicate, silicon-based, high power, waveguide lasers I. INTRODUCTION ILICON-BASED laser is an important component of silicon-based optoelectronic integrated system. The performance of silicon-based laser directly affects the overall performance of the optoelectronic integrated circuit, as a source. It is the key to realize high-speed, broadband, low-cost and lowpower consumption optical interconnection, and it also acts as the basis for the development of high-speed broadband inform
IEEE Photonics Journal, 2019
Narrow-linewidth silicon-based lasers play an important role in the field of silicon photonics. I... more Narrow-linewidth silicon-based lasers play an important role in the field of silicon photonics. In this paper, we have proposed a high performance narrow-linewidth silicon-based Er silicate laser, based on strip-loaded DFB waveguide with a hybrid pump and signal co-resonant cavity. The saturated output power can reach over 90 mW at 1535 nm, with a maximum power conversion efficiency of 66%. The pump threshold is about 22 mW, and the laser linewidth is also as narrow as about 755 Hz. The results provide a new way for future scale integrated ultranarrow-linewidth silicon-based lasers application.
The Journal of Organic Chemistry, 2018
A selective construction of 2-substituted benzothiazoles from o-iodoaniline derivatives, S 8 and ... more A selective construction of 2-substituted benzothiazoles from o-iodoaniline derivatives, S 8 and N-tosylhydrazone via copper-promoted [3+1+1]-type cyclization reaction has been realized. In the protocol, the carbon atom on N-tosylhydrazone could be regulated to construct benzothiazole by changing the reaction system. Furthermore, the transformation has achieved the construction of multiple carbon-heteroatom bonds.
Chemical communications (Cambridge, England), Jan 13, 2018
A concise and efficient protocol to assemble diverse benzothiazole derivatives in high yields was... more A concise and efficient protocol to assemble diverse benzothiazole derivatives in high yields was provided via copper catalyzed tandem cyclization with o-haloanilines, elemental sulfur and terminal alkynes as raw materials. In this protocol, C atoms on the C[triple bond, length as m-dash]C triple bond were controllably involved in the construction of the benzothiazole framework and multiple carbon-heteroatom bonds through divergent routes.
Applied Sciences
In recent years, silicon photonics has achieved great success in optical communication area. More... more In recent years, silicon photonics has achieved great success in optical communication area. More and more on-chip optoelectronic devices have been realized and commercialized on silicon photonics platform, such as silicon-based modulators, filters and detectors. However, on-chip light sources are still not achieved because that silicon is an indirect bandgap material. To solve this problem, the rare earth element erbium (Er) is considered, which emits light covering 1.5 μm to 1.6 μm and has been widely used in fiber amplifiers. Compared to Er-doped fiber amplifiers (EDFA), the Er ion concentration needs to be more than two orders higher for on-chip Er-based light sources due to the compact size integration requirements. Therefore, the choice of the host material is crucially important. In this paper, we review the recent progress in on-chip Er-based light sources and the advantages and disadvantages of different host materials are compared and analyzed. Finally, the existing challe...
Asia Communications and Photonics Conference 2021
We optimize phase shift structures of distributed feedback (DFB) lasers. For the multi-distribute... more We optimize phase shift structures of distributed feedback (DFB) lasers. For the multi-distributed phase shift laser, the output slope can reach up to 51.90% when the optimal cavity length is 2.2 mm.
OSA Continuum, 2021
Erbium-doped waveguide amplifiers are important for silicon photonic large-scale integration. The... more Erbium-doped waveguide amplifiers are important for silicon photonic large-scale integration. They boost the optical signal to compensate for the on-chip loss of the whole system, such as insertion, transmission, and coupling loss. Herein, a GaAs-on-silicon-pumped erbium-based waveguide amplifier is proposed. The optical amplifier is based on waveguides evanescently coupled with an erbium-doped thin-film gain medium. The erbium-doped gain region is locally pumped by a hybrid GaAs-SiN/SiO vertical-cavity-emitting pump laser. It can be selectively fabricated on the silicon photonic chip that has good position flexibility when integrated with other devices. The amplifier provides high-quality electrically driven amplification and realizes the full integration of amplifiers with the silicon photonic system without any external pump light source. The modeling analyses show that the proposed amplifier design has a maximum saturated gain of 42.5 dB/cm with a modulation bandwidth of ∼42 GHz...
2019 Asia Communications and Photonics Conference (ACP), 2019
We proposed high performance Er silicate amplifiers and lasers, based on hybrid erbium silicate-s... more We proposed high performance Er silicate amplifiers and lasers, based on hybrid erbium silicate-silicon nitride strip-loaded waveguides. The results provide supports and guidances for the high performance erbium silicate amplifiers and lasers.
Angewandte Chemie, 2020
Described here is a multicomponent strategy to achieve two different regioselectivities from alky... more Described here is a multicomponent strategy to achieve two different regioselectivities from alkynes, isothiocyanates and H 2 O with a proton acid/N-chlorophthalimide (NCPI) system, selectively obtaining non-aromatic five-membered sulfur heterocycles: 1,3-oxathiol-2-imines/thiazol-2(3H)-one derivatives through multiple bond formations. The process features readily available starting materials, mild reaction conditions, broad substrate scope, good functional group tolerance, high regio- and chemo- selectivities, gram-scale synthesis and late-stage modifications. Mechanistic studies support that the transformation process includes a combination of H 2 O and isothiocyanate, free radical formation, carbonation and intramolecular cyclization to give the products. Furthermore, the 1,3-oxathiol-2-imine derivatives with unique fluorescence characteristics, can be served as metal ions Pd 2+ sensor with "turn-off" response, showing potential applications in environmental and biological fields.
Optics Express, 2018
Erbium-doped materials have played an important role in the fabrication of light sources used in ... more Erbium-doped materials have played an important role in the fabrication of light sources used in silicon photonics. Recent studies demonstrated that erbium silicate nanowire had a high net gain attributable to its high erbium concentration and excellent material quality. We establish a more accurate and comprehensive theoretical model of erbium silicate nanowire, analyze the modeled nanowire's properties, and optimize a high-gain erbium silicate waveguide amplifier and low-threshold, high-efficiency laser by considering upconversion, energy transfer, and amplified spontaneous emission. The simulation results and previous experimental data reported in reference showed some agreement. A proposed waveguide amplifier, based on the optimized design, displayed a gain greater than 20 dB/mm. Then, a 3.3 mW low-threshold laser with a maximum power-conversion efficiency of 50% was modeled by choosing the optimized resonator cavity and reflector. The results indicate that erbium silicate compound materials with large optical gains can serve as potential candidates for inclusion in scale-integrated amplifiers and other applications requiring lasers.
Optical Materials Express, 2018
In the process of information technology, as Moore's law becomes more and more close to the limit... more In the process of information technology, as Moore's law becomes more and more close to the limit, the consensus to combine microelectronics and optoelectronics to develop silicon-based large-scale optoelectronic integration technology is inevitable. As the most important part of silicon photonic devices, a silicon-based light source still attracted great effort. In the traditional research, erbium-doped materials have played an important role in silicon-based light sources. Recent studies demonstrated that the erbium silicate compound had a high net gain attributable to a high erbium concentration that has no insolubility problem. This paper focuses on the theory, designs, simulations, preparation methods, process and device optimizations of the erbium silicate compound optical waveguide amplifier and laser. The erbium silicate compound materials with large optical gains can serve as potential candidates for future silicon-based scale-integrated light-source applications.
Organic Letters, 2019
A novel strategy for the synthesis of 2-aroylthienothiazoles via C−H/N−O bond functionalization o... more A novel strategy for the synthesis of 2-aroylthienothiazoles via C−H/N−O bond functionalization of ketoximes is developed. This reaction features excellent step-and atom-economy, as well as broad substrate scope. Various common ketoximes, even vinyl ketoximes, were efficiently converted to 2-aroylthienothiazoles. Preliminary mechanistic studies indicated that the radical process should be involved in this transformation. Moreover, the product exhibited good coordination with Cu(II), showing the potential application in the metal coordination field.
Applied Sciences
In recent years, silicon photonics has achieved great success in optical communication area. More... more In recent years, silicon photonics has achieved great success in optical communication area. More and more on-chip optoelectronic devices have been realized and commercialized on silicon photonics platform, such as silicon-based modulators, filters and detectors. However, on-chip light sources are still not achieved because that silicon is an indirect bandgap material. To solve this problem, the rare earth element erbium (Er) is considered, which emits light covering 1.5 μm to 1.6 μm and has been widely used in fiber amplifiers. Compared to Er-doped fiber amplifiers (EDFA), the Er ion concentration needs to be more than two orders higher for on-chip Er-based light sources due to the compact size integration requirements. Therefore, the choice of the host material is crucially important. In this paper, we review the recent progress in on-chip Er-based light sources and the advantages and disadvantages of different host materials are compared and analyzed. Finally, the existing challe...
Asia Communications and Photonics Conference 2021
We optimize phase shift structures of distributed feedback (DFB) lasers. For the multi-distribute... more We optimize phase shift structures of distributed feedback (DFB) lasers. For the multi-distributed phase shift laser, the output slope can reach up to 51.90% when the optimal cavity length is 2.2 mm.
OSA Continuum, 2021
Erbium-doped waveguide amplifiers are important for silicon photonic large-scale integration. The... more Erbium-doped waveguide amplifiers are important for silicon photonic large-scale integration. They boost the optical signal to compensate for the on-chip loss of the whole system, such as insertion, transmission, and coupling loss. Herein, a GaAs-on-silicon-pumped erbium-based waveguide amplifier is proposed. The optical amplifier is based on waveguides evanescently coupled with an erbium-doped thin-film gain medium. The erbium-doped gain region is locally pumped by a hybrid GaAs-SiN/SiO vertical-cavity-emitting pump laser. It can be selectively fabricated on the silicon photonic chip that has good position flexibility when integrated with other devices. The amplifier provides high-quality electrically driven amplification and realizes the full integration of amplifiers with the silicon photonic system without any external pump light source. The modeling analyses show that the proposed amplifier design has a maximum saturated gain of 42.5 dB/cm with a modulation bandwidth of ∼42 GHz...
2019 Asia Communications and Photonics Conference (ACP), 2019
We proposed high performance Er silicate amplifiers and lasers, based on hybrid erbium silicate-s... more We proposed high performance Er silicate amplifiers and lasers, based on hybrid erbium silicate-silicon nitride strip-loaded waveguides. The results provide supports and guidances for the high performance erbium silicate amplifiers and lasers.
Optics Express, 2018
Erbium-doped materials have played an important role in the fabrication of light sources used in ... more Erbium-doped materials have played an important role in the fabrication of light sources used in silicon photonics. Recent studies demonstrated that erbium silicate nanowire had a high net gain attributable to its high erbium concentration and excellent material quality. We establish a more accurate and comprehensive theoretical model of erbium silicate nanowire, analyze the modeled nanowire's properties, and optimize a high-gain erbium silicate waveguide amplifier and low-threshold, high-efficiency laser by considering upconversion, energy transfer, and amplified spontaneous emission. The simulation results and previous experimental data reported in reference showed some agreement. A proposed waveguide amplifier, based on the optimized design, displayed a gain greater than 20 dB/mm. Then, a 3.3 mW low-threshold laser with a maximum power-conversion efficiency of 50% was modeled by choosing the optimized resonator cavity and reflector. The results indicate that erbium silicate compound materials with large optical gains can serve as potential candidates for inclusion in scale-integrated amplifiers and other applications requiring lasers.
Optical Materials Express, 2018
In the process of information technology, as Moore's law becomes more and more close to the limit... more In the process of information technology, as Moore's law becomes more and more close to the limit, the consensus to combine microelectronics and optoelectronics to develop silicon-based large-scale optoelectronic integration technology is inevitable. As the most important part of silicon photonic devices, a silicon-based light source still attracted great effort. In the traditional research, erbium-doped materials have played an important role in silicon-based light sources. Recent studies demonstrated that the erbium silicate compound had a high net gain attributable to a high erbium concentration that has no insolubility problem. This paper focuses on the theory, designs, simulations, preparation methods, process and device optimizations of the erbium silicate compound optical waveguide amplifier and laser. The erbium silicate compound materials with large optical gains can serve as potential candidates for future silicon-based scale-integrated light-source applications.
IEEE Journal of Quantum Electronics, 2020
Silicon-based lasers have played an important role in silicon-based optoelectronic integrated sys... more Silicon-based lasers have played an important role in silicon-based optoelectronic integrated system. Recent studies demonstrated erbium silicate was an ideal candidate material for high performance silicon-based lasers in the telecom wavelength due to its high erbium concentrations. In previous works erbium silicate compounds led to high waveguide losses, the hybrid layers of erbium silicate and silicon nitride seem to be suitable to overcome high losses of previous designs with Er-based gain media waveguides. So a hybrid erbium silicate-silicon nitride waveguide laser has been proposed to make up for the loss problems of erbium silicate material, and to obtain high laser output power and high efficiency. Then, different cavity geometries, including ordinary strip-loaded DFB cavity with pump/signal resonant external cavity, have been discussed and optimized to further improve the laser performance. A 70 mW high-power laser with the maximum power conversion efficiency of 60% can be obtained in a 6.5 mm distributed feedback cavity length through developing the optimized signal external resonator cavity and grating reflector. Finally, the usability of this technology has been discussed as a potential input laser for silicon photonics. The results indicate the hybrid erbium silicate-silicon nitride waveguide lasers with high performance as potential candidates for future scale integrated silicon-based lasers application. Index Terms-erbium silicate, silicon-based, high power, waveguide lasers I. INTRODUCTION ILICON-BASED laser is an important component of silicon-based optoelectronic integrated system. The performance of silicon-based laser directly affects the overall performance of the optoelectronic integrated circuit, as a source. It is the key to realize high-speed, broadband, low-cost and lowpower consumption optical interconnection, and it also acts as the basis for the development of high-speed broadband inform
IEEE Journal of Quantum Electronics, 2020
Silicon-based lasers have played an important role in silicon-based optoelectronic integrated sys... more Silicon-based lasers have played an important role in silicon-based optoelectronic integrated system. Recent studies demonstrated erbium silicate was an ideal candidate material for high performance silicon-based lasers in the telecom wavelength due to its high erbium concentrations. In previous works erbium silicate compounds led to high waveguide losses, the hybrid layers of erbium silicate and silicon nitride seem to be suitable to overcome high losses of previous designs with Er-based gain media waveguides. So a hybrid erbium silicate-silicon nitride waveguide laser has been proposed to make up for the loss problems of erbium silicate material, and to obtain high laser output power and high efficiency. Then, different cavity geometries, including ordinary strip-loaded DFB cavity with pump/signal resonant external cavity, have been discussed and optimized to further improve the laser performance. A 70 mW high-power laser with the maximum power conversion efficiency of 60% can be obtained in a 6.5 mm distributed feedback cavity length through developing the optimized signal external resonator cavity and grating reflector. Finally, the usability of this technology has been discussed as a potential input laser for silicon photonics. The results indicate the hybrid erbium silicate-silicon nitride waveguide lasers with high performance as potential candidates for future scale integrated silicon-based lasers application. Index Terms-erbium silicate, silicon-based, high power, waveguide lasers I. INTRODUCTION ILICON-BASED laser is an important component of silicon-based optoelectronic integrated system. The performance of silicon-based laser directly affects the overall performance of the optoelectronic integrated circuit, as a source. It is the key to realize high-speed, broadband, low-cost and lowpower consumption optical interconnection, and it also acts as the basis for the development of high-speed broadband inform
IEEE Photonics Journal, 2019
Narrow-linewidth silicon-based lasers play an important role in the field of silicon photonics. I... more Narrow-linewidth silicon-based lasers play an important role in the field of silicon photonics. In this paper, we have proposed a high performance narrow-linewidth silicon-based Er silicate laser, based on strip-loaded DFB waveguide with a hybrid pump and signal co-resonant cavity. The saturated output power can reach over 90 mW at 1535 nm, with a maximum power conversion efficiency of 66%. The pump threshold is about 22 mW, and the laser linewidth is also as narrow as about 755 Hz. The results provide a new way for future scale integrated ultranarrow-linewidth silicon-based lasers application.
The Journal of Organic Chemistry, 2018
A selective construction of 2-substituted benzothiazoles from o-iodoaniline derivatives, S 8 and ... more A selective construction of 2-substituted benzothiazoles from o-iodoaniline derivatives, S 8 and N-tosylhydrazone via copper-promoted [3+1+1]-type cyclization reaction has been realized. In the protocol, the carbon atom on N-tosylhydrazone could be regulated to construct benzothiazole by changing the reaction system. Furthermore, the transformation has achieved the construction of multiple carbon-heteroatom bonds.
Chemical communications (Cambridge, England), Jan 13, 2018
A concise and efficient protocol to assemble diverse benzothiazole derivatives in high yields was... more A concise and efficient protocol to assemble diverse benzothiazole derivatives in high yields was provided via copper catalyzed tandem cyclization with o-haloanilines, elemental sulfur and terminal alkynes as raw materials. In this protocol, C atoms on the C[triple bond, length as m-dash]C triple bond were controllably involved in the construction of the benzothiazole framework and multiple carbon-heteroatom bonds through divergent routes.