D. Tournier | INSA Lyon (original) (raw)

Papers by D. Tournier

Research paper thumbnail of Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages

JFET are experimentally stressed to provide data for modelling, inverter and driver design. The e... more JFET are experimentally stressed to provide data for modelling, inverter and driver design. The experimental set-up is described. A surge generator is built and a SiC JFET is stressed. During the stress, a temperature estimation is done at increasing time steps, in order to obtain the full thermal response versus time.

Research paper thumbnail of High temperature, Smart Power Module for aircraft actuators

Research paper thumbnail of State of the art of high temperature power electronics

Materials Science and Engineering: B, 2011

High temperature power electronics has become possible with the recent availability of silicon ca... more High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500°C, whereas silicon is limited to 150-200°C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200°C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).

Research paper thumbnail of Composants de Puissance en Sic

Research paper thumbnail of Analysis of an ESD failure mechanism on a SiC MESFET

Microelectronics Reliability, 2014

ABSTRACT Efficient energy management become more and more crucial with increasing energy resource... more ABSTRACT Efficient energy management become more and more crucial with increasing energy resource scarcity. Power electronic will play a major role in this field and thus require innovations like using wide band gap semiconductor to build power devices. SiC, GaN, diamond material-based devices are currently more or less mature and will sooner or later require investigations on their reliability to allow their wide adoption. In this work we investigate on the robustness of a SiC-MESFET to ElectroStatic-Discharge (ESD). Surprisingly the ESD robustness is rather low and found to be related to both current non-uniformity and a quite unexpected parasitic NPN bipolar transistor triggering. The outcome of this study allows proposing first guidelines to optimize ESD robustness of such devices.

Research paper thumbnail of Weighted H<inf>∞</inf> filtering versus observation: Application to signal differentiation

Proceedings of the 2010 American Control Conference, 2010

ABSTRACT In this paper, we investigate the weighted H∞ Luenberger observation and the weighted H8... more ABSTRACT In this paper, we investigate the weighted H∞ Luenberger observation and the weighted H8 filtering. The motivation is the design of signal differentiators. The standard Luenberger observer structure is modified in order to formulate the design problem as a convex optimization problem involving Linear Matrix Inequality (LMI) constraints. Furthermore, we reveal the relationship between the Luenberger observer and the filter and we discuss the interest of the first one versus the other one. These results are then applied to the signal differentiator design problem. A numerical example, simulation and real time results are finally presented.

Research paper thumbnail of Electrical Characterization of Deposited and Oxidized Ta<sub>2</sub>Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures

Materials Science Forum, 2004

Research paper thumbnail of Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Materials Science Forum, 2002

Research paper thumbnail of Integration of Temperature and Current Sensors in 4H-SiC VDMOS

Materials Science Forum, 2012

ABSTRACT Silicon Carbide VDMOS with integrated current and temperature sensors have been successf... more ABSTRACT Silicon Carbide VDMOS with integrated current and temperature sensors have been successfully fabricated without degradation of the chip forward or reverse characteristics due to the sensors. The temperature sensors show impedance correlated to the temperature, which permits to track the drift region&#39;s temperature of the device. We have shown that the sensor current ratio can be influenced by the current spreading in the drift layer, especially when the channel resistance contribution is reduced. This aspect will be more critical on VDMOS with low channel resistance. Also, the sensor current ratio stability will be improved on devices with larger active area or thinner drift layer. Integration of such sensors will permit to monitor and protect innovative power electronic systems using SiC chips.

Research paper thumbnail of SiC power semiconductor devices for new applications in power electronics

2008 13th International Power Electronics and Motion Control Conference, 2008

This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able... more This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.

Research paper thumbnail of Chapter 6-SiC Devices-6.2 Unipolar diodes-Temperature Impact on High-Current 1.2 kV SiC Schottky Rectifiers

Research paper thumbnail of OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes Christophe Raynaud, Daniel Loup, Philippe Godignon 2

Research paper thumbnail of Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de silicium

RESUME -Ce travail de recherche propose une approche nouvelle de modélisation de diodes Schottky/... more RESUME -Ce travail de recherche propose une approche nouvelle de modélisation de diodes Schottky/JBS en carbure de silicium en employant la seule équation de Shockley comme terme générique d'un modèle électrique multi-branches. La fonction de Lambert est utilisée pour s'affranchir du caractère implicite de cette équation. In fine, des paramètres -dits phénoménologiquessont déterminés afin de reconstruire la caractéristique IVT en dessous et au dessus du seuil avec un facteur de qualité convaincant. Deux cas sont traités, celui d'une diode Schottky SiC avec interface en Tungstène stable, et celui de diodes Schottky et JBS avec interface en Nickel issues de procédés de conception/fabrication en cours de développement. Les résultats obtenus permettent de discuter de la maturité/qualité de l'interface métal/semiconducteur étudiée et des possibles mécanismes de conduction à l'oeuvre. Enfin, le modèle phénoménologique présente aussi un intérêt en terme de simulations électriques.

Research paper thumbnail of Etude de différents transistors de puissance SiC 1.2 kV des températures cryogéniques aux hautes températures

Research paper thumbnail of Process Optimisation for <11-20> 4H-SiC MOSFET Applications

Materials Science Forum, 2006

... a caroline.blanc@ges.univ-montp2.fr, b Dominique.Tournier@cnm.es , cPhilippe.Godignon@ cnm.es... more ... a caroline.blanc@ges.univ-montp2.fr, b Dominique.Tournier@cnm.es , cPhilippe.Godignon@ cnm.es, d dbrink@postino.up.ac.za, e ... report on 4H-SiC MOSFET devices implemented on p-type &amp;lt;11-20&amp;gt;-oriented epitaxial layers, using a two-step procedure for gate oxide formation ...

Research paper thumbnail of Procede De Fabrication D'Un Transistor a Effet De Champ a Jonction Jfet

Research paper thumbnail of Analyse par la simulation des modèles d'interconnexion nécessaires à la conception de convertisseurs à découpage monolithiques

Research paper thumbnail of High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Materials Science Forum, 2009

Research paper thumbnail of Towards Very High Voltage SiC Power Devices

ECS Transactions, 2013

ABSTRACT The development of high voltage devices is a great challenge. At least, railway and high... more ABSTRACT The development of high voltage devices is a great challenge. At least, railway and high voltage distribution network are example of applications requiring high voltage devices. SiC power devices and technology seems to be mature enough to give a short term solution. Indeed, silicon carbide devices appear to be the semiconductor of choice for high voltage (&gt;6.5 kV) applications compared to Gallium Nitride and Diamond. For high voltage devices, periphery protection is mandatory in order to reduce the well-known electric field crowding taking place at the junction edge. Some details are given about the different periphery technics (JTE, guard rings, MESA) applied to SiC devices, before combining some of them to reach higher and higher breakdown voltages. Some works remaining to be done are given as a conclusion of this paper.

Research paper thumbnail of Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN

Materials Science Forum, 2012

This work reports of investigation on the origin of the ohmic behavior for Ti/Al based contacts o... more This work reports of investigation on the origin of the ohmic behavior for Ti/Al based contacts on n-GaN. Indeed, last publications tend to prove that the "nitrogen vacancy" theory is not confirmed by the experimental ground available. To find new answers, we first made electrical characterizations on some Al/Ti/n + -GaN contacts with different annealing conditions. Then, we performed SIMS depth profiles of annealed TiN/Ti/n + -GaN samples. Results developed in this paper tend to demonstrate that the ohmic behavior of Ti/Al based contact is mainly due to an increase of the doping concentration. Moreover, the high doping level can be explained by an in-diffusion of Ti and an exo-diffusion of Si elements close to the metal / semiconductor interface.

Research paper thumbnail of Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages

JFET are experimentally stressed to provide data for modelling, inverter and driver design. The e... more JFET are experimentally stressed to provide data for modelling, inverter and driver design. The experimental set-up is described. A surge generator is built and a SiC JFET is stressed. During the stress, a temperature estimation is done at increasing time steps, in order to obtain the full thermal response versus time.

Research paper thumbnail of High temperature, Smart Power Module for aircraft actuators

Research paper thumbnail of State of the art of high temperature power electronics

Materials Science and Engineering: B, 2011

High temperature power electronics has become possible with the recent availability of silicon ca... more High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500°C, whereas silicon is limited to 150-200°C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200°C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).

Research paper thumbnail of Composants de Puissance en Sic

Research paper thumbnail of Analysis of an ESD failure mechanism on a SiC MESFET

Microelectronics Reliability, 2014

ABSTRACT Efficient energy management become more and more crucial with increasing energy resource... more ABSTRACT Efficient energy management become more and more crucial with increasing energy resource scarcity. Power electronic will play a major role in this field and thus require innovations like using wide band gap semiconductor to build power devices. SiC, GaN, diamond material-based devices are currently more or less mature and will sooner or later require investigations on their reliability to allow their wide adoption. In this work we investigate on the robustness of a SiC-MESFET to ElectroStatic-Discharge (ESD). Surprisingly the ESD robustness is rather low and found to be related to both current non-uniformity and a quite unexpected parasitic NPN bipolar transistor triggering. The outcome of this study allows proposing first guidelines to optimize ESD robustness of such devices.

Research paper thumbnail of Weighted H<inf>∞</inf> filtering versus observation: Application to signal differentiation

Proceedings of the 2010 American Control Conference, 2010

ABSTRACT In this paper, we investigate the weighted H∞ Luenberger observation and the weighted H8... more ABSTRACT In this paper, we investigate the weighted H∞ Luenberger observation and the weighted H8 filtering. The motivation is the design of signal differentiators. The standard Luenberger observer structure is modified in order to formulate the design problem as a convex optimization problem involving Linear Matrix Inequality (LMI) constraints. Furthermore, we reveal the relationship between the Luenberger observer and the filter and we discuss the interest of the first one versus the other one. These results are then applied to the signal differentiator design problem. A numerical example, simulation and real time results are finally presented.

Research paper thumbnail of Electrical Characterization of Deposited and Oxidized Ta<sub>2</sub>Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures

Materials Science Forum, 2004

Research paper thumbnail of Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Materials Science Forum, 2002

Research paper thumbnail of Integration of Temperature and Current Sensors in 4H-SiC VDMOS

Materials Science Forum, 2012

ABSTRACT Silicon Carbide VDMOS with integrated current and temperature sensors have been successf... more ABSTRACT Silicon Carbide VDMOS with integrated current and temperature sensors have been successfully fabricated without degradation of the chip forward or reverse characteristics due to the sensors. The temperature sensors show impedance correlated to the temperature, which permits to track the drift region&#39;s temperature of the device. We have shown that the sensor current ratio can be influenced by the current spreading in the drift layer, especially when the channel resistance contribution is reduced. This aspect will be more critical on VDMOS with low channel resistance. Also, the sensor current ratio stability will be improved on devices with larger active area or thinner drift layer. Integration of such sensors will permit to monitor and protect innovative power electronic systems using SiC chips.

Research paper thumbnail of SiC power semiconductor devices for new applications in power electronics

2008 13th International Power Electronics and Motion Control Conference, 2008

This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able... more This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.

Research paper thumbnail of Chapter 6-SiC Devices-6.2 Unipolar diodes-Temperature Impact on High-Current 1.2 kV SiC Schottky Rectifiers

Research paper thumbnail of OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes Christophe Raynaud, Daniel Loup, Philippe Godignon 2

Research paper thumbnail of Modélisation phénoménologique de la caractéristique IV en direct de diodes Schottky/JBS en carbure de silicium

RESUME -Ce travail de recherche propose une approche nouvelle de modélisation de diodes Schottky/... more RESUME -Ce travail de recherche propose une approche nouvelle de modélisation de diodes Schottky/JBS en carbure de silicium en employant la seule équation de Shockley comme terme générique d'un modèle électrique multi-branches. La fonction de Lambert est utilisée pour s'affranchir du caractère implicite de cette équation. In fine, des paramètres -dits phénoménologiquessont déterminés afin de reconstruire la caractéristique IVT en dessous et au dessus du seuil avec un facteur de qualité convaincant. Deux cas sont traités, celui d'une diode Schottky SiC avec interface en Tungstène stable, et celui de diodes Schottky et JBS avec interface en Nickel issues de procédés de conception/fabrication en cours de développement. Les résultats obtenus permettent de discuter de la maturité/qualité de l'interface métal/semiconducteur étudiée et des possibles mécanismes de conduction à l'oeuvre. Enfin, le modèle phénoménologique présente aussi un intérêt en terme de simulations électriques.

Research paper thumbnail of Etude de différents transistors de puissance SiC 1.2 kV des températures cryogéniques aux hautes températures

Research paper thumbnail of Process Optimisation for <11-20> 4H-SiC MOSFET Applications

Materials Science Forum, 2006

... a caroline.blanc@ges.univ-montp2.fr, b Dominique.Tournier@cnm.es , cPhilippe.Godignon@ cnm.es... more ... a caroline.blanc@ges.univ-montp2.fr, b Dominique.Tournier@cnm.es , cPhilippe.Godignon@ cnm.es, d dbrink@postino.up.ac.za, e ... report on 4H-SiC MOSFET devices implemented on p-type &amp;lt;11-20&amp;gt;-oriented epitaxial layers, using a two-step procedure for gate oxide formation ...

Research paper thumbnail of Procede De Fabrication D'Un Transistor a Effet De Champ a Jonction Jfet

Research paper thumbnail of Analyse par la simulation des modèles d'interconnexion nécessaires à la conception de convertisseurs à découpage monolithiques

Research paper thumbnail of High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Materials Science Forum, 2009

Research paper thumbnail of Towards Very High Voltage SiC Power Devices

ECS Transactions, 2013

ABSTRACT The development of high voltage devices is a great challenge. At least, railway and high... more ABSTRACT The development of high voltage devices is a great challenge. At least, railway and high voltage distribution network are example of applications requiring high voltage devices. SiC power devices and technology seems to be mature enough to give a short term solution. Indeed, silicon carbide devices appear to be the semiconductor of choice for high voltage (&gt;6.5 kV) applications compared to Gallium Nitride and Diamond. For high voltage devices, periphery protection is mandatory in order to reduce the well-known electric field crowding taking place at the junction edge. Some details are given about the different periphery technics (JTE, guard rings, MESA) applied to SiC devices, before combining some of them to reach higher and higher breakdown voltages. Some works remaining to be done are given as a conclusion of this paper.

Research paper thumbnail of Investigations on the Origin of the Ohmic Behavior for Ti/Al Based Contacts on n-Type GaN

Materials Science Forum, 2012

This work reports of investigation on the origin of the ohmic behavior for Ti/Al based contacts o... more This work reports of investigation on the origin of the ohmic behavior for Ti/Al based contacts on n-GaN. Indeed, last publications tend to prove that the "nitrogen vacancy" theory is not confirmed by the experimental ground available. To find new answers, we first made electrical characterizations on some Al/Ti/n + -GaN contacts with different annealing conditions. Then, we performed SIMS depth profiles of annealed TiN/Ti/n + -GaN samples. Results developed in this paper tend to demonstrate that the ohmic behavior of Ti/Al based contact is mainly due to an increase of the doping concentration. Moreover, the high doping level can be explained by an in-diffusion of Ti and an exo-diffusion of Si elements close to the metal / semiconductor interface.