Richard Brindos | Intel Corporation (original) (raw)
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Papers by Richard Brindos
MRS Proceedings, 1999
ABSTRACT
MRS Proceedings, 2000
ABSTRACT
IEEE Transactions on Electron Devices, 2002
Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily doped re... more Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily doped regions. With the correct lasing and implant conditions, the process can be used to form ultrashallow, heavily doped junctions in boron-implanted silicon. Laser energy in the nonmelt regime has been supplied to the silicon surface at a ramp rate greater than 10 C/s. This rapid ramp rate will help decrease dopant diffusion while supplying enough energy to the surface to produce dopant activation. High-dose, nonamorphizing boron implants at a dose of 10 ions/cm and energies of 5 KeV and 1 KeV are annealed with a 308-nm excimer laser. Subsequent rapid thermal anneals are used to study the effect of laser annealing as a pretreatment. SIMS, sheet resistance and mobility data have been measured for all annealing and implant conditions. For the 5-KeV implants, the 308-nm nonmelt laser preanneal results in increased diffusion. However, for the 1-KeV implant processed with ten laser pulses, the SIMS profile shows that no measurable diffusion has occurred, yet a sheet resistance of 420 /sq was produced.
Applied Physics Letters, 1999
Si ϩ ions were implanted into silicon wafers with background concentrations of arsenic ranging fr... more Si ϩ ions were implanted into silicon wafers with background concentrations of arsenic ranging from 1ϫ10 17 to 3ϫ10 19 cm Ϫ3 to study the interaction between arsenic atoms and excess self-interstitials. Samples were then annealed at 750°C for a range of times between 15 and 60 min to nucleate and dissolve ͕311͖ defects. The concentration of trapped interstitials in these defects was measured using quantitative plan-view transmission electron microscopy. It is shown that, as the arsenic concentration increases, there is a reduction in the number and size of the ͕311͖ defects. This decrease in the ͕311͖ defect density with increasing arsenic well concentration is believed to be the result of interstitial trapping by the arsenic. Upon annealing, the trapped interstitial concentration in the ͕311͖ defects decreases as the defects dissolve. The time constant for the dissolution was calculated to be 33Ϯ5 min at 750°C, and was independent of background concentration. This suggests that the arsenic traps some of the interstitials, and these traps are sufficiently stable that they do not affect the subsequent ͕311͖ dissolution at 750°C.
MRS Proceedings, 1999
ABSTRACT
MRS Proceedings, 2000
ABSTRACT
IEEE Transactions on Electron Devices, 2002
Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily doped re... more Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily doped regions. With the correct lasing and implant conditions, the process can be used to form ultrashallow, heavily doped junctions in boron-implanted silicon. Laser energy in the nonmelt regime has been supplied to the silicon surface at a ramp rate greater than 10 C/s. This rapid ramp rate will help decrease dopant diffusion while supplying enough energy to the surface to produce dopant activation. High-dose, nonamorphizing boron implants at a dose of 10 ions/cm and energies of 5 KeV and 1 KeV are annealed with a 308-nm excimer laser. Subsequent rapid thermal anneals are used to study the effect of laser annealing as a pretreatment. SIMS, sheet resistance and mobility data have been measured for all annealing and implant conditions. For the 5-KeV implants, the 308-nm nonmelt laser preanneal results in increased diffusion. However, for the 1-KeV implant processed with ten laser pulses, the SIMS profile shows that no measurable diffusion has occurred, yet a sheet resistance of 420 /sq was produced.
Applied Physics Letters, 1999
Si ϩ ions were implanted into silicon wafers with background concentrations of arsenic ranging fr... more Si ϩ ions were implanted into silicon wafers with background concentrations of arsenic ranging from 1ϫ10 17 to 3ϫ10 19 cm Ϫ3 to study the interaction between arsenic atoms and excess self-interstitials. Samples were then annealed at 750°C for a range of times between 15 and 60 min to nucleate and dissolve ͕311͖ defects. The concentration of trapped interstitials in these defects was measured using quantitative plan-view transmission electron microscopy. It is shown that, as the arsenic concentration increases, there is a reduction in the number and size of the ͕311͖ defects. This decrease in the ͕311͖ defect density with increasing arsenic well concentration is believed to be the result of interstitial trapping by the arsenic. Upon annealing, the trapped interstitial concentration in the ͕311͖ defects decreases as the defects dissolve. The time constant for the dissolution was calculated to be 33Ϯ5 min at 750°C, and was independent of background concentration. This suggests that the arsenic traps some of the interstitials, and these traps are sufficiently stable that they do not affect the subsequent ͕311͖ dissolution at 750°C.