Se-Young Seo | Korea Advanced Institute of Science and Technology (original) (raw)

Papers by Se-Young Seo

Research paper thumbnail of 1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide

Journal of Applied Physics, 2000

1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxi... more 1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Optimum Er3+ luminescence was obtained after an anneal of at least 5 min at 950 °C, and at least 1 at. % excess silicon in SRSO was necessary for the excitation of erbium to be dominated by carriers. The refractive index and the bulk waveguide loss of erbium-doped SRSO film with 0.1 at. % erbium and 1 at. % excess silicon after the optimal anneal treatment was 1.4817 and 4.0 dB/cm, respectively. Fabrication of an erbium-doped SRSO strip waveguide using the standard Si processing techniques and the guiding of internal 1.54 μm Er3+ emission by such a strip waveguide are demonstrated.

Research paper thumbnail of Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

MRS Proceedings, 1998

The photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated... more The photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Research paper thumbnail of Strong blue-green luminescence of silicon-rich silicon oxide with doping of C and Tb

Journal of the Korean Physical Society, 2004

The effects of C doping and Tb co-doping on the enhancement of visible luminescence from siliconr... more The effects of C doping and Tb co-doping on the enhancement of visible luminescence from siliconrich silicon oxide (SRSO), which consists of Si nanoclusters embedded inside an SiO2 matrix, are investigated. C-doped SRSO (SRSO : C) and Tb co-doped films were fabricated by an electron cyclotron resonance-plasma enhanced chemical vapor deposition method with concurrent sputtering of Tb target by using SiH4, O2, and CH4 source gases followed by a high temperature anneal. Intense blue-white visible luminescence, visible to the naked eye under daylight conditions, was observed from SRSO : C film with a nearly equal amount of C and excess Si, after an anneal at 950 ◦C and furthermore tuned by controlling the C to excess Si ratio, the C content, and the anneal temperature. The film co-doped with Tb also shows strong Tb photoluminescence which is enhanced by the content of C. The 543 nm Tb lifetimes were in the range of 0.5 – 1.2 msec, comparable to those from Tb-doped silica. Based on the results, we conclude that exciton recombination in Cincorporated Si nanoclusters is responsible for visible luminescence of SRSO : C and can efficiently excite incorporated Tb ions.

Research paper thumbnail of <title>Rare-earth-doped nanocrystalline silicon: excitation and de-excitation mechanisms and implications for waveguide amplifier applications</title>

Rare-Earth-Doped Materials and Devices V, 2001

Excitation and de-excitation mechanisms of rare earth doped nanocrystalline silicon and its impli... more Excitation and de-excitation mechanisms of rare earth doped nanocrystalline silicon and its implications for waveguide amplifier applications are investigated. Er, Nd, and Pr doped silicon rich silicon oxide (SRSO) thin films were prepared by electron cyclotron resonance enhanced chemical vapor deposition with co-sputtering of target and subsequent anneal at 950 degrees C. Temperature and pump-power dependence of Er3+ photoluminescence shows that carrier-mediated non-radiative de-excitation are strongly suppressed indicating feasibility of population inversion. Detailed investigations of dependence of Er3+ luminescence intensity and lifetime on pump width indicate that exciton-erbium coupling is dominant over carrier- exciton coupling, and that the luminescent Er ions are not inside the Si nanoclusters but in the SiO2 matrix near the clusters. Luminescence properties of Nd-doped SRSO is similar to that of Er-doped SRSO, but the temperature dependence of Nd3+ luminescence intensity is different from that of Er3+ luminescence, an effect which we ascribe to its higher transition energy. In contrast, no luminescence could be observed from Pr-doped SRSO. Erbium-doped SRSO waveguides are fabricated using the standard Si processing techniques, and guiding of 1.55 micrometers light with strong Er luminescence is observed. These results indicate that for rare erath-doped SRSO waveguides to become practical, formation of high density of small Si nanoclusters must be induced.

Research paper thumbnail of EWT 태양전지 제작을 위한 레이저 미세 관통홀 가공 기술

Journal of the Korean Solar Energy Society, 2011

Research paper thumbnail of Optical Gain Using Nanocrystal Sensitized Erbium: Nato-Series

Towards the First Silicon Laser, 2003

The amount of information being transmitted via optical fibers has been increasing exponentially ... more The amount of information being transmitted via optical fibers has been increasing exponentially at a rate exceeding even the vaunted “Moore’s Law” of silicon integrated circuits [1]. One key technology that enabled such rapid growth is erbium-doped fiber amplifiers (EDFA). By using the intra-4f transition of Er3+ (4I13/2 → 4I15/2) to amplify optical signals near 1.54 μm, the absorption minimum

Research paper thumbnail of Anneal temperature dependent Er3+/Tm3+ energy transfer and luminescence from Er and Tm co-doped silicon-rich silicon oxide

Thin Solid Films, 2010

The effect of the anneal temperature on the Er 3+ /Tm 3+ energy transfer and subsequent Er 3+ /Tm... more The effect of the anneal temperature on the Er 3+ /Tm 3+ energy transfer and subsequent Er 3+ /Tm 3+ luminescence from Er/Tm co-doped, silicon-rich silicon oxide films are investigated. The anneal procedure necessary for optimum photoluminescence (PL) from the co-doped film is substantially different from that for only Er-or Tm-doped films. Analysis and modeling of PL intensity and time-resolved PL indicate that this higher optimum anneal temperature is due to the anneal temperature dependent Er-Tm interactions. In addition, the optimization of combined ultrabroad Er/Tm luminescence was discussed controlling Er-Tm interactions which is tailored by the change of Er/Tm doping ratio and anneal temperature.

Research paper thumbnail of The effect of temperature on resonator characteristics of a Si nanocrystal planar microcavity

Journal of Applied Physics, 2009

The effect of temperature on the resonator characteristics of a Si nanocrystal (Si-nc) planar mic... more The effect of temperature on the resonator characteristics of a Si nanocrystal (Si-nc) planar microcavity was investigated. A microcavity comprises of an active Si-nc layer sandwiched between Si∕SiO2 distributed Bragg reflectors (DBRs). Typical microcavity results such as spectral narrowing and a luminescence decay rate enhancement of Si-nc luminescence can be observed. Temperature-dependent photoluminescence (PL) and the time-resolved PL of the microcavity were measured and analyzed with the model, while taking the thermal effect on the DBRs into account. We found that the thermo-optic effect of the Si layer on the DBRs plays a predominant role in determining temperature-dependent cavity performances such as resonance wavelengths, Q factors, and spontaneous emission times.

Research paper thumbnail of Carrier-induced Er3+ luminescence quenching of erbium-doped silicon-rich silicon oxide

Applied Physics Letters, 1999

The quenching of Er3+ luminescence induced by carriers in silicon nanoclusters of Er-doped silico... more The quenching of Er3+ luminescence induced by carriers in silicon nanoclusters of Er-doped silicon-rich silicon oxide (SRSO) is investigated. The dependence of Er3+ photoluminescence intensities and lifetimes upon the temperature, pump power, and the background illumination intensity shows that in SRSO, Auger-type interactions with carriers in the host matrix that can severely limit the Er3+ luminescence efficiency are greatly suppressed. The results also show that efficient optoelectronic devices using Er-doped SRSO may be feasible.

Research paper thumbnail of Nanocrystal-sensitized, Er-doped silica as the material basis for gain-providing, active Si-based microphotonics

Research paper thumbnail of Roon temperature 1.54 ㎛ Er³+ luminescence from erbium doped oxygen - rich silicon deposited by electron cyclotron resonance plasma enhanced vapor deposition

Research paper thumbnail of Effect of ion-irradiation-induced defect on the optically active Er ions in Er-doped silicon-rich silicon oxide

2007 Conference on Lasers and Electro-Optics - Pacific Rim, 2007

The effect of ion-irradiation induced defect on the optically active Er3+ ions in Er doped silico... more The effect of ion-irradiation induced defect on the optically active Er3+ ions in Er doped silicon-rich silicon oxide (SRSO) film is investigated. We find that the initial presence of defects strongly reduces the fraction of Er ions that can be excited via nc-Si even after their removal via high-temperature annealing.

Research paper thumbnail of Recent advances in nanocrystal-Si sensitized, Er-doped silica waveguide amplifiers

OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005., 2005

ABSTRACT

Research paper thumbnail of Performance optimization of nanocrystal-Si sensitized Er-doped waveguide amplifier

OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005., 2005

We analyze the performance of nanocrystal-Si sensitized Erbium doped waveguide amplifier, and sug... more We analyze the performance of nanocrystal-Si sensitized Erbium doped waveguide amplifier, and suggest novel structures / operation methods which can be used to enhance its performance figures. With modest assumptions on the design parameters including currently available pump LED power, we show that the performance target of 10dB of gain with 0dBm input signal can be achieved. 2005 Optical Society of America.

Research paper thumbnail of Waveguiding and 1.54 μm Er3+ Photoluminescence Properties of Erbium Doped Silicon Rich Silicon Oxide

MRS Proceedings, 1999

The waveguiding and 1.54 μm Er3+ photoluminescent properties of Er doped silicon-rich silicon oxi... more The waveguiding and 1.54 μm Er3+ photoluminescent properties of Er doped silicon-rich silicon oxide (SRSO) are investigated. Erbium-doped SRSO films, which consist of nanocrystalline Si clusters embedded inside Si0 2 matrix, were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium. The excess Si content of the SRSO films ranged from 0 to 10 at. %, and Er content ranged from 0.01 to 0.3 at. %. After deposition, films were rapid thermal annealed at temperatures between 750 and 1150°C for durations ranging from 2 to 20 min. to precipitate silicon nanoclusters. All films show strong room temperature 1.54 μm Er3+ photoluminescence. The luminescence lifetimes that can be > 6 msec. The refractive indices of the SRSO films range from 1.48 to 2.47, increasing with increasing excess Si content. Thus, waveguides can be formed easily by depositing erbium doped SRSO films on 1 μm thick SiO2 films. Furthermore,...

Research paper thumbnail of Exciton-mediated excitation of Er3+ in Erbium-doped silicon rich silicon oxide

MRS Proceedings, 2000

Exciton-mediated excitation of Er3+ in erbium doped silicon rich silicon oxide (SRSO) is investig... more Exciton-mediated excitation of Er3+ in erbium doped silicon rich silicon oxide (SRSO) is investigated. Er-doped SRSO films were fabricated by electron cyclotron-resonance plasmaenhanced chemical vapor deposition of Er-doped SiOx (x < 2) using SiH4 and O2 as source gases and co-sputtering of Er, followed by an anneal at 950 °C. Very weak visible luminescence from Si nanocluster relative to Er3+ luminescence were observed, indicating a very efficient excitation of Er3+ ions by Si nanoclusters. From detailed modeling and analysis of time-resolved Er3+ luminescence as the excitation duration and excitation power, we conclude that exciton-erbium coupling is dominant over exciton-nanocluster. The results are consistent with the proposal that the luminescent Er3+ ions are located predominantly in the SiO2 layer.

Research paper thumbnail of Si-NC Based Light Emitters and Er Doping for Gain Materials

Silicon Nanophotonics - Basic Principles, Present Status and Perspectives

Research paper thumbnail of Ion Beam Enhanced Formation and Luminescence of Si Nanoclusters from a-SiOx

MRS Proceedings, 2000

ABSTRACTThe effect of ion beams on the formation of Si nanoclusters from a-SiOx films and their l... more ABSTRACTThe effect of ion beams on the formation of Si nanoclusters from a-SiOx films and their luminescence properties is investigated. a-SiOx films with Si content ranging from 33 to 50 at. % were deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) of SiH4 and O2. Prior to anneal, some samples were implanted with 380 keV Si to a dose ranging from 5.7 × 1014 cm-2 to 5.7 × 1016 cm-2. All films were rapid thermal annealed under flowing Ar environment, and hydrogenated after anneals to passivate defects and to enhance the luminescence of Si nanoclusters. For films with Si content less than 40 at. %, ion beam slightly reduces the photoluminescence (PL) intensity and induces a slight blueshift of the luminescence. For films with Si content greater than 40 at. %, ion beam greatly increases the PL intensity. Based on the effect of the ion beams dose and the ion specie, we propose that ion beams damage greatly promotes nucleation of small Si clus...

Research paper thumbnail of Enhanced green luminescence from Tb doped silicon-rich silicon oxide co-doped with C or N

2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915)

We report on enhanced green luminescence from Tb-doped silicon-rich silicon oxide film co-doped w... more We report on enhanced green luminescence from Tb-doped silicon-rich silicon oxide film co-doped with C or N. We attribute such enhancement on the effect of C/N doping on formation of high-energy excitons.

Research paper thumbnail of Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

Journal of Applied Physics, 2002

The effect of ion irradiation on the formation of luminescent Si nanocrystals from silicon-rich s... more The effect of ion irradiation on the formation of luminescent Si nanocrystals from silicon-rich silicon oxide ͑SRSO͒ films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition ͑PECVD͒ whose Si content ranged from 33 to 50 at. % is investigated. As-deposited SRSO films contained a high density of irregular-shaped Si nanocrystals. Irradiating these films with 380 keV Si at room temperature to a dose of 5.7ϫ10 15 cm Ϫ2 prior to anneal at 1000°C is found to increase the luminescence intensity due to Si nanocrystals over the films. Based on the x-ray photoemission spectra and the dependence of the luminescence intensity on the irradiating ion dose, anneal time, and the silicon content of the film, we propose the destruction of pre-existing Si clusters by ion irradiation to be an important factor responsible for the observed enhancement of luminescence, and suggest that preanneal irradiation may be a viable method to control the formation of luminescent Si nanocrystals in PECVD-deposited silicon-rich silicon oxide.

Research paper thumbnail of 1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide

Journal of Applied Physics, 2000

1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxi... more 1.54 μm Er3+ photoluminescent and waveguiding properties of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Optimum Er3+ luminescence was obtained after an anneal of at least 5 min at 950 °C, and at least 1 at. % excess silicon in SRSO was necessary for the excitation of erbium to be dominated by carriers. The refractive index and the bulk waveguide loss of erbium-doped SRSO film with 0.1 at. % erbium and 1 at. % excess silicon after the optimal anneal treatment was 1.4817 and 4.0 dB/cm, respectively. Fabrication of an erbium-doped SRSO strip waveguide using the standard Si processing techniques and the guiding of internal 1.54 μm Er3+ emission by such a strip waveguide are demonstrated.

Research paper thumbnail of Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

MRS Proceedings, 1998

The photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated... more The photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Research paper thumbnail of Strong blue-green luminescence of silicon-rich silicon oxide with doping of C and Tb

Journal of the Korean Physical Society, 2004

The effects of C doping and Tb co-doping on the enhancement of visible luminescence from siliconr... more The effects of C doping and Tb co-doping on the enhancement of visible luminescence from siliconrich silicon oxide (SRSO), which consists of Si nanoclusters embedded inside an SiO2 matrix, are investigated. C-doped SRSO (SRSO : C) and Tb co-doped films were fabricated by an electron cyclotron resonance-plasma enhanced chemical vapor deposition method with concurrent sputtering of Tb target by using SiH4, O2, and CH4 source gases followed by a high temperature anneal. Intense blue-white visible luminescence, visible to the naked eye under daylight conditions, was observed from SRSO : C film with a nearly equal amount of C and excess Si, after an anneal at 950 ◦C and furthermore tuned by controlling the C to excess Si ratio, the C content, and the anneal temperature. The film co-doped with Tb also shows strong Tb photoluminescence which is enhanced by the content of C. The 543 nm Tb lifetimes were in the range of 0.5 – 1.2 msec, comparable to those from Tb-doped silica. Based on the results, we conclude that exciton recombination in Cincorporated Si nanoclusters is responsible for visible luminescence of SRSO : C and can efficiently excite incorporated Tb ions.

Research paper thumbnail of <title>Rare-earth-doped nanocrystalline silicon: excitation and de-excitation mechanisms and implications for waveguide amplifier applications</title>

Rare-Earth-Doped Materials and Devices V, 2001

Excitation and de-excitation mechanisms of rare earth doped nanocrystalline silicon and its impli... more Excitation and de-excitation mechanisms of rare earth doped nanocrystalline silicon and its implications for waveguide amplifier applications are investigated. Er, Nd, and Pr doped silicon rich silicon oxide (SRSO) thin films were prepared by electron cyclotron resonance enhanced chemical vapor deposition with co-sputtering of target and subsequent anneal at 950 degrees C. Temperature and pump-power dependence of Er3+ photoluminescence shows that carrier-mediated non-radiative de-excitation are strongly suppressed indicating feasibility of population inversion. Detailed investigations of dependence of Er3+ luminescence intensity and lifetime on pump width indicate that exciton-erbium coupling is dominant over carrier- exciton coupling, and that the luminescent Er ions are not inside the Si nanoclusters but in the SiO2 matrix near the clusters. Luminescence properties of Nd-doped SRSO is similar to that of Er-doped SRSO, but the temperature dependence of Nd3+ luminescence intensity is different from that of Er3+ luminescence, an effect which we ascribe to its higher transition energy. In contrast, no luminescence could be observed from Pr-doped SRSO. Erbium-doped SRSO waveguides are fabricated using the standard Si processing techniques, and guiding of 1.55 micrometers light with strong Er luminescence is observed. These results indicate that for rare erath-doped SRSO waveguides to become practical, formation of high density of small Si nanoclusters must be induced.

Research paper thumbnail of EWT 태양전지 제작을 위한 레이저 미세 관통홀 가공 기술

Journal of the Korean Solar Energy Society, 2011

Research paper thumbnail of Optical Gain Using Nanocrystal Sensitized Erbium: Nato-Series

Towards the First Silicon Laser, 2003

The amount of information being transmitted via optical fibers has been increasing exponentially ... more The amount of information being transmitted via optical fibers has been increasing exponentially at a rate exceeding even the vaunted “Moore’s Law” of silicon integrated circuits [1]. One key technology that enabled such rapid growth is erbium-doped fiber amplifiers (EDFA). By using the intra-4f transition of Er3+ (4I13/2 → 4I15/2) to amplify optical signals near 1.54 μm, the absorption minimum

Research paper thumbnail of Anneal temperature dependent Er3+/Tm3+ energy transfer and luminescence from Er and Tm co-doped silicon-rich silicon oxide

Thin Solid Films, 2010

The effect of the anneal temperature on the Er 3+ /Tm 3+ energy transfer and subsequent Er 3+ /Tm... more The effect of the anneal temperature on the Er 3+ /Tm 3+ energy transfer and subsequent Er 3+ /Tm 3+ luminescence from Er/Tm co-doped, silicon-rich silicon oxide films are investigated. The anneal procedure necessary for optimum photoluminescence (PL) from the co-doped film is substantially different from that for only Er-or Tm-doped films. Analysis and modeling of PL intensity and time-resolved PL indicate that this higher optimum anneal temperature is due to the anneal temperature dependent Er-Tm interactions. In addition, the optimization of combined ultrabroad Er/Tm luminescence was discussed controlling Er-Tm interactions which is tailored by the change of Er/Tm doping ratio and anneal temperature.

Research paper thumbnail of The effect of temperature on resonator characteristics of a Si nanocrystal planar microcavity

Journal of Applied Physics, 2009

The effect of temperature on the resonator characteristics of a Si nanocrystal (Si-nc) planar mic... more The effect of temperature on the resonator characteristics of a Si nanocrystal (Si-nc) planar microcavity was investigated. A microcavity comprises of an active Si-nc layer sandwiched between Si∕SiO2 distributed Bragg reflectors (DBRs). Typical microcavity results such as spectral narrowing and a luminescence decay rate enhancement of Si-nc luminescence can be observed. Temperature-dependent photoluminescence (PL) and the time-resolved PL of the microcavity were measured and analyzed with the model, while taking the thermal effect on the DBRs into account. We found that the thermo-optic effect of the Si layer on the DBRs plays a predominant role in determining temperature-dependent cavity performances such as resonance wavelengths, Q factors, and spontaneous emission times.

Research paper thumbnail of Carrier-induced Er3+ luminescence quenching of erbium-doped silicon-rich silicon oxide

Applied Physics Letters, 1999

The quenching of Er3+ luminescence induced by carriers in silicon nanoclusters of Er-doped silico... more The quenching of Er3+ luminescence induced by carriers in silicon nanoclusters of Er-doped silicon-rich silicon oxide (SRSO) is investigated. The dependence of Er3+ photoluminescence intensities and lifetimes upon the temperature, pump power, and the background illumination intensity shows that in SRSO, Auger-type interactions with carriers in the host matrix that can severely limit the Er3+ luminescence efficiency are greatly suppressed. The results also show that efficient optoelectronic devices using Er-doped SRSO may be feasible.

Research paper thumbnail of Nanocrystal-sensitized, Er-doped silica as the material basis for gain-providing, active Si-based microphotonics

Research paper thumbnail of Roon temperature 1.54 ㎛ Er³+ luminescence from erbium doped oxygen - rich silicon deposited by electron cyclotron resonance plasma enhanced vapor deposition

Research paper thumbnail of Effect of ion-irradiation-induced defect on the optically active Er ions in Er-doped silicon-rich silicon oxide

2007 Conference on Lasers and Electro-Optics - Pacific Rim, 2007

The effect of ion-irradiation induced defect on the optically active Er3+ ions in Er doped silico... more The effect of ion-irradiation induced defect on the optically active Er3+ ions in Er doped silicon-rich silicon oxide (SRSO) film is investigated. We find that the initial presence of defects strongly reduces the fraction of Er ions that can be excited via nc-Si even after their removal via high-temperature annealing.

Research paper thumbnail of Recent advances in nanocrystal-Si sensitized, Er-doped silica waveguide amplifiers

OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005., 2005

ABSTRACT

Research paper thumbnail of Performance optimization of nanocrystal-Si sensitized Er-doped waveguide amplifier

OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005., 2005

We analyze the performance of nanocrystal-Si sensitized Erbium doped waveguide amplifier, and sug... more We analyze the performance of nanocrystal-Si sensitized Erbium doped waveguide amplifier, and suggest novel structures / operation methods which can be used to enhance its performance figures. With modest assumptions on the design parameters including currently available pump LED power, we show that the performance target of 10dB of gain with 0dBm input signal can be achieved. 2005 Optical Society of America.

Research paper thumbnail of Waveguiding and 1.54 μm Er3+ Photoluminescence Properties of Erbium Doped Silicon Rich Silicon Oxide

MRS Proceedings, 1999

The waveguiding and 1.54 μm Er3+ photoluminescent properties of Er doped silicon-rich silicon oxi... more The waveguiding and 1.54 μm Er3+ photoluminescent properties of Er doped silicon-rich silicon oxide (SRSO) are investigated. Erbium-doped SRSO films, which consist of nanocrystalline Si clusters embedded inside Si0 2 matrix, were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium. The excess Si content of the SRSO films ranged from 0 to 10 at. %, and Er content ranged from 0.01 to 0.3 at. %. After deposition, films were rapid thermal annealed at temperatures between 750 and 1150°C for durations ranging from 2 to 20 min. to precipitate silicon nanoclusters. All films show strong room temperature 1.54 μm Er3+ photoluminescence. The luminescence lifetimes that can be > 6 msec. The refractive indices of the SRSO films range from 1.48 to 2.47, increasing with increasing excess Si content. Thus, waveguides can be formed easily by depositing erbium doped SRSO films on 1 μm thick SiO2 films. Furthermore,...

Research paper thumbnail of Exciton-mediated excitation of Er3+ in Erbium-doped silicon rich silicon oxide

MRS Proceedings, 2000

Exciton-mediated excitation of Er3+ in erbium doped silicon rich silicon oxide (SRSO) is investig... more Exciton-mediated excitation of Er3+ in erbium doped silicon rich silicon oxide (SRSO) is investigated. Er-doped SRSO films were fabricated by electron cyclotron-resonance plasmaenhanced chemical vapor deposition of Er-doped SiOx (x < 2) using SiH4 and O2 as source gases and co-sputtering of Er, followed by an anneal at 950 °C. Very weak visible luminescence from Si nanocluster relative to Er3+ luminescence were observed, indicating a very efficient excitation of Er3+ ions by Si nanoclusters. From detailed modeling and analysis of time-resolved Er3+ luminescence as the excitation duration and excitation power, we conclude that exciton-erbium coupling is dominant over exciton-nanocluster. The results are consistent with the proposal that the luminescent Er3+ ions are located predominantly in the SiO2 layer.

Research paper thumbnail of Si-NC Based Light Emitters and Er Doping for Gain Materials

Silicon Nanophotonics - Basic Principles, Present Status and Perspectives

Research paper thumbnail of Ion Beam Enhanced Formation and Luminescence of Si Nanoclusters from a-SiOx

MRS Proceedings, 2000

ABSTRACTThe effect of ion beams on the formation of Si nanoclusters from a-SiOx films and their l... more ABSTRACTThe effect of ion beams on the formation of Si nanoclusters from a-SiOx films and their luminescence properties is investigated. a-SiOx films with Si content ranging from 33 to 50 at. % were deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) of SiH4 and O2. Prior to anneal, some samples were implanted with 380 keV Si to a dose ranging from 5.7 × 1014 cm-2 to 5.7 × 1016 cm-2. All films were rapid thermal annealed under flowing Ar environment, and hydrogenated after anneals to passivate defects and to enhance the luminescence of Si nanoclusters. For films with Si content less than 40 at. %, ion beam slightly reduces the photoluminescence (PL) intensity and induces a slight blueshift of the luminescence. For films with Si content greater than 40 at. %, ion beam greatly increases the PL intensity. Based on the effect of the ion beams dose and the ion specie, we propose that ion beams damage greatly promotes nucleation of small Si clus...

Research paper thumbnail of Enhanced green luminescence from Tb doped silicon-rich silicon oxide co-doped with C or N

2004 10th International Workshop on Computational Electronics (IEEE Cat. No.04EX915)

We report on enhanced green luminescence from Tb-doped silicon-rich silicon oxide film co-doped w... more We report on enhanced green luminescence from Tb-doped silicon-rich silicon oxide film co-doped with C or N. We attribute such enhancement on the effect of C/N doping on formation of high-energy excitons.

Research paper thumbnail of Controlling the formation of luminescent Si nanocrystals in plasma-enhanced chemical vapor deposited silicon-rich silicon oxide through ion irradiation

Journal of Applied Physics, 2002

The effect of ion irradiation on the formation of luminescent Si nanocrystals from silicon-rich s... more The effect of ion irradiation on the formation of luminescent Si nanocrystals from silicon-rich silicon oxide ͑SRSO͒ films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition ͑PECVD͒ whose Si content ranged from 33 to 50 at. % is investigated. As-deposited SRSO films contained a high density of irregular-shaped Si nanocrystals. Irradiating these films with 380 keV Si at room temperature to a dose of 5.7ϫ10 15 cm Ϫ2 prior to anneal at 1000°C is found to increase the luminescence intensity due to Si nanocrystals over the films. Based on the x-ray photoemission spectra and the dependence of the luminescence intensity on the irradiating ion dose, anneal time, and the silicon content of the film, we propose the destruction of pre-existing Si clusters by ion irradiation to be an important factor responsible for the observed enhancement of luminescence, and suggest that preanneal irradiation may be a viable method to control the formation of luminescent Si nanocrystals in PECVD-deposited silicon-rich silicon oxide.